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 Dual Nature of Radiation and Matter
Types of Electronic Emission : Photoelectric Effect
Ei(photons)
A. Photoelectric :
Light
¥y⑤
Photons
1.
tight made
up of
B. Thermal :
Temperature 2.1 photons → de
-

Voltic Field Emission :DNandÉ

C-
/ work
function ,W , 3. Momentum of photon :É :&
D. 2° Emission : collision withe:
* (E) =
4.
Massofaphoton :¥ :# :&
Elev)
5. KEE -
varies from Otomax .

Graphs of Photoelectric
Effect Tinrreeecaassess G.
Efficiency of Photoelectric
"S 2° "
•

4) A< (D) B •
Ei > w ; Ni >Uo ;
×;< to emission :< 1%

A ,

B 77
Slope :& ( KEE )=Ei-Wo=E(vivo) * 2011 KEE (e) (vs)
•

e- kE=4ev
g.
>
- =
.

2018 Vs=4V

y,
•
Ei=Wo;hOi=hOoiÑ=✗° 2020
incident)T
I ^ Photocurrent Photoectric emission without
Photocurrent T )
¥ ""

#
(Eincident)T no
of photons
; Xi
to
-

Eitrwo view >

%
•
;
& ""
falling
,

>
* 2009
a Photocurrent
Nopnotoeectrpcempsspon KEEP
I
doesn't change
ÑÑ☐→KEe-=2ev
t
* 2016 Vstt photocurrent : same

ftp.#B0thhavesame Jef *2010

→ us ? ?
Intensity ,butU• v2 >

=3ev→vs v (Intensity)T
V52

T
* ""°
↳Ñ→ " "
what's > 0 ?
← →
npnotocurrent Intensity
=¥ Eppnoton
→ ↳ game
-

Cno of photons)1sp 2¥ (Photons -1s)T

-

t $2009b
(no Of electrons)psP
¥ !÷= ihÉ=É "
-

"
photocurrent q " (KEE) -
Same (Electrons -
is )t

&
'

[
'

>
Intensity &
-
- .
. . . -
-

by4and
-

Multiply Us Same
- Photocurrent T
equalize
* 2016
e- (mass ,m)→E(XD
At 2015 * 2014 (E-incident)T by 20%
✗ ~> 2009
photon →
E( ✗ y FT→kE=E
KE=3E →
kt-e.lo.5-o.8evj.ws ?
g)
-

relationship blwiiandik ?
? ?? ? ? ??
What is
¥ whatiswo ?
ii. iii. iii. siéi
-j÷mE fhÉieÉÉ ;2h÷-Wo=3E
*, ; E=hc_ :
,

and
% i Multiply by§ equalize
-
- - - -
-
a
* 2015 Xi= 500mm Multiply by } and equalize * 2012 2001N Bulb ;X= 0.64m
Wo=2.28eV * 2015 ✗ At 2021 7=251 50W =
his .hc_
What is 6×10-7
Hole broglie ] emitted
-

e- ?
↳
M→Vs=3Vo →
Cnphotonsls ?
2✗→ Vs=v,
-

lev
* 2012
Speedie
1-
Ei=(2§÷)eV=2.48eV wnatpsxo ? mushers
,
2011
us →
speed ,vz
hj-hc-o-3evoi-hj.ci?Ij-ieiiiia.sevWo=0.5ev2.KEe--
-

'
(2.48-2.28)=0
:-. ! .2eV
q
¥÷÷:÷i÷
.
- . - .

3- ✗ e-
=g÷m_E ,
Multiply by } and
Equalize
* whendistance b/w source
of light * 2010 → no -

of photons :N
and metal surface [ a-sn.AT
② ↳ KE of photoelectrons :k .

* 2007
Intensity
/ -15¥]
I
④
→ no of photons 2N
-
:

↳ KE of photoelectrons :k
Photocurrent
/ i→÷]
De
Broglie wavelength * 2014
-
-

Ktpartice ( E- → Not)

Ekto.bfnafullstop.tn
saathreh warna negativity
td-h-p-jah-m-EK-jh-me.ua
p
How does ✗ de -
B
change ?
* 201g ↳
×d✗¥
✗ →
¥
,
i.
aatihai ftp.202 ,
f * 2020
* 2019
✗✗

"j÷añ_ 0j÷A÷
E.
✗ neutron particle
oj2÷A÷
=

A- c.
-

=
* 2011 =

Iproi-orii-0.gg#
'

deletion
B.

o.jo#A-F.+gas-mo1ecule=gzhm--.t
D
'
- -
-
-
; .

1
Proton to Einstein : Chi
Duetoshunyatrawma ,

I'm
strong .
 Atoms
d- Particle
Scattering Experiment Bohr's Model
of Atom →
only for
electron
one

system
d. 0.14% -8>10 -

Repulsive force by nucleus 1. Circular

Stationary
,
orbits
* 2020 .

0.0125%-8>90 concentrated in nucleus

n(¥g =Ñn=mvnrn )
.

-
Mass 2 .

99-861 .
-

Undetected -

lotof Empty space

3. e-
jumps ↳ ¥ →
change in
Energy Energy of Photon
:

NIOI-g.in?yg-y.E-y,;1mpacl=y¥.Ze¥yt(%÷
-
2. Parameter,b , associated
Ak 2011,201012008 * 2015

3. Distance
4.
En=Eo.÷
5 .

rn-ro.mg?6.Vn=Vo.Zn
of closest
approach ,r : * 2016
[ Vazan]
2010 (Izzat donado] [ Rantuuz]
L-mpvp2-yit-g-ZNFPEo-l-13.ba) (ro 0.530A)
-_ (↳ 2.2×106 Mls)
=

Electron Revolving in Hatom

{ fort -
atom

=§=2÷
7. 1- ✗ n3
* 200712005
Fe=Fc
y•ji ; Ey =(- 13.6)ev -22

it;,v ¥ejÉ=m¥ ="E=£m"=8t÷r Ez -1-3.4 )ev [ Teenoketeeno Izzat do] ,

E3=(- 1.51 )eV / Current

]✗Z÷z
8 I

kE=¥g÷p
_→TE= - .

: TE = -
se Ey -1-0.84)eV
KE [ kzatdo ,nahPto current padega]
✗
pE=2TE=fe4_
= ,
→

B→centre✗Z÷
PE = -2 41TEor 9-

[ Bezzatisenaach]
app
spectral series / lines
'

series 1st line 2nd line Last line

10 -

Magnetic Moment ,Ñ ✗A

I → 2 It> 3 I
[Manka moment]
hyman
a
(nu) < →
<

Balmer ( n=z) 253 2<-34 2s→ a

11 When NT :-[ less ET 12 Mower

-0 :
nnigher →
.

Paschen (n=3)
.

a
3<-34 3<-35 3s→
Peress -0 PET
Egap Epnoton emitted
:
:

Brackett (n=u) 4 5 4 6 " → •

kEIess④ : KET .

Mower
nhigher
→
Pfund ( n=s) 5←> 6 5<-17 5- a
Egapte
Egap :
Ephoton absorbed
Two
types of Questions * 2016

[ \
Jlwave Number )=1 =փ
:( , ÷;]
In 22 -

/
✗
photon
1^2 > n ')
To calculated for Ratio of ✗
photons ioqotf.cm ,

transition
a
particular * 2016
2012 * 2012 H atom
If You want to make additions
-

* 2005 2013 ,
go , , ln=5→n=1 ) doit here -

Vatomdueto photon
→ No .of lines :(na ni) (nihil)
Spectral emission
?
-

2 i.
÷=R /÷ -1%1=14%1
* 2014 ninitial =d
EgivenleY-kqtff-2.p-pn.mn __h×_=2I¥h_
A.

✗
photon absorbed 975A :
=
12.71W
no .

of spectral Itnes ? 3 Hinton / =/ Paton

Ef=o.gge✓(n=y
.

2.
2421¥
=mv

3. no.=(4- 1) (4-1+1)
2
 Nuclei
Important terms All About Nucleus and Nuclear force
✗A
→ UP )
•

Mneutron = Mproton = 1.67×10 -27kg Nuclear Mass •

Quark
Nuclear volume ✗A
* 2015,2012 2007,2006 ↳ down
lamu 1.67×10
-27kg $3 quark system
'
,
=

Mass
Ra=R, .A%[Ro=1.5fm]
no Nuclear Radius Aks
.

✗ → -

"
:#
•

Representation of Nucleus : Nuclear Density ✗ A° _→ pconsiant -2.27×1017 units

-

ÉÉ Atomic no .
* 2008
*
Neutron, Proton
Nuclear force Cudd) fund)
isotope.si?nprotonslsame)E2same]
• :

i. 1. Short
range strongest force
,

150b¥! nnucleonslsame)
/
2. Independent of charge
[ Asami 111-+111--1^-1 "
Yukawa theory
.

g. Duet, # mesons

ones :
↳ IT (n-n.p.pl
nneutronslsame)
4. Non Central
-

,
Depends on
spin .

> m, hey,
5.
Generally Attractive .
-

reo.se/-mlstarts-repu1siveJ:r--o.4fm( very repulsive]

=D Mav Miltmzytmzz
Ma (y% )
=

lBq= ldecayls
RADIOACTIVITY
>
tktytz
mz(z%, ⇐ lcurie = 3.7×10"Bq .

Radioactive substance :
I
Rutherford -10613g
•
properties of • Radioactive law :

Formation of Nucleus and 1. Affect

Photographic plate =D
dany =xt
-

* 2013
Nuclear Reactions 2. Ionize the
gas
2020¢ ¥ !! 3. Penetrate the matter

Nt-No.e-dttmsystemtimas-def-tBE.dm.cz
*
•
nucleons → Nucleus .
2010 ⇐
☒

=×t
/%-)
In
* 2018
.

E-released
:BE_ Radioactive emmitance
93 / Mev → lamu • :
tip ,r * 2016
.

BET; more Ereleased More stable the nucleus

;
⇐→t=
23,73--1091%+1 2015
d-
particle p particle
-
8-
Ray
• BE
per nucleon
→ A< 30 Ismail ]7f"%n Heat
* 2019 → If No_=2n t-n.tk
£170
e-
Electro
>A > 30 [Almost constant ] N&202l Nt
-

mass : 4m me
mass :
* 2014
-

magnetic
]
> Maximum :Fe(8.75 Mev) the
Charge charge
↳ C- e) 2013
: :
waves or tyg =
0.692
A > 170 [ small ] 2011
fission
Penetration Power : Ionizing Power : a

Packing fraction T=÷

0 >p > ✗ x-p > r
by
.

• :

* 2020 -

Conservatnof A and Z
* 2011
A + B → C + D Nuclear Reaction and Reactor > Multiplication
(
•
To overcome
factor ,k=ne
•

MA MB Mc Mp Mass
F'
repulsion fue ,
once the
fuel get n_a
it activated , chain react" starts
Control Rods
BEA BEB BEC BED Binding E
µ§ Gassy >
(Maintains nabsorbed with
EA EB Ep
Éi¥ ?
Ec Onan
.
Eposessed average remitted )
2. snare emitted
E- Released
✓ k> I i.
Ready to explode
:( MA + MB
'
me Mrs)c Activated by Bombarding
-

come to halt
-

n ✓ 12<1
µ,
:

:( BEC -1 BED BEA -131--131*2014 Tt with slow (how EK)

moving
-

High Ek ✓ 12=1 : critical state .

2010
( Eaters to Ep) Moderators
Af2O21 neutrons cadmium
Rods of
- -

goof ✓
} ✓ how A
and Boron
d-
Decay B- decay B+ Decay ✓ Not absorb neutrons

f.
A -4
A ✓ Dao , Graphite Enudear
2
✗ →
Y-ixn-p-e-i-Jp-se-i-in.io Released
2-2
A A A
Nuclei ✗ Y A×→ Absorbed coolants
Intleavy y
by
→
_
2 2
2+1 2-1
* 2011

2009pm Nuclei
11120)
:
nn >
np In nuclei
np nn>
:

8-
Decay ☒ → ✗
* Aandz Remain Generator ←Turbine #
(High E) CROWE) water Vapours
same
coupled with
 Peculiar PYQS
☒ 2016 * 2011
tyz=3o minutes ⑨ ④
~
> 40% Decay (ti)
t
tblwc.gg/.Decayltz ) ⑤
It =
ta - t, t=0_ 4No No

tyz-lmintyz-2min-2.LI/l09Y-J-l09/YDwnenNp=NQ > NR ?

2.303.1-42-(1-110920
10910-1096)ology)
=

4-NO No
0.693
t
(
-

A 2010 2No
( t=o) → No
I
(t=5minJ→N÷ No
(t=2min)N÷
What Btk ? I

N÷
|
't
"
'

Nt=No e
NR=
-

e-
'
=e
it -
-

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t
×=¥÷=¥ ÷

ini-it-umiHE.IT#tYz=5Ioge( 2) minutes
1- Y ,
'

* 2008 ④ 57 No

④ ✗ No

what time ,
After Mq=1e ?
-
sit
No =
No @
' -5×1-+1 't

Nµ÷=
e- = @
-
it
M2= Noe
• -4kt .

e- =
@

t=I→
 Semiconductors and it's Devices
wnenasolidtsmadeupof Due to
merging and Two
Energy Intrinsic Semiconductor
closely packed atoms energy ,
→
splitting of outer → Bands are
levels of energy levels
single atom splits formed ✓ without doping
✓
G- 14 Solid Block
Energy Band Theory or

☐
-

-
conduction Band
valence Band ✓
few holes and electrons present due to thermal
abbe ration .

Metals semi conductors

-
Insulators
AM 2012

Eeg er
'

n
Extrinsic Semiconductor
Eg >3ev

Y
*"
N
✗
type P-type
-

ao•µaoio
V13 overlaps wtthCB.SQ.at ok ,CBis completely empty .

9-137
Itis easier for charge T > ok(Room temperature CB
G- ↳
Totcnarged Impurity
* 2019
added
①
charged
and
-

hargetgblwthe CB
,
carriers
tojumpto CB is
partially filled .

and contribute in V13 Onincreasingt

-
'
electrons f) Majority CCC holes it

chargecarriersjump
when -11^1-0^1 * 2020
conductivity
'

'
lntnterinsic : " =
" ""
from VB " " ' " Neutral charge on semiconductor Neutral
* zoos -

comparison of Eg
Ort
-

By doping , neornntbut conductivity .

•

wnpiedoppng.it must be taken care that the size

their
product remains same .

4- dopant atoms / impurity) is comparable tothespze

niz-ne.mn of semiconductor atoms ( G- 14)

Semiconductor Diode
•

Mobility of electrons
:v÷=Ue conductivity
* 2021
=e[Nelle -1^44158
→
Making ofadiode Mobility of
: Holes
:v÷=yµ
•

1.
nandp
-

- Put
together 2. Potential Attained
tn→p) * Breakdown and V I Characteristics
Diffusion of Plattainslowerv) ←
-

e-

hCp→n) N(attains v3 Breakdown of Reverse Biasing

due to concentration
higher a.

Zener Breakdown When doping ishigh

.

:
EIN
•

P
gradient He -

←
±

EB
•
Avalanche Breakdown When doping is low : .

Diffusion current Barrier

electrified produced
current
that
2. In Reverse biasing ,
Rnighbutat
resists
diffusion .

R=o
breakdown
* 202,
El
Idriftt • until they
3-
Drift current Generated : Dv=o

Vconstantacrossthediode
-

equalize :(towards D)
urn
Holescnear junction )
diffusion I
I ☒ 2016
zener :

www.pywhatfsthevalueof-I?usedasa
2h

Nowthediodets Ready to be e- ( near

junction :(towarsn)
µ_-m%¥%
-

Used /Regulator
Diffusion :§;
I
.

pig iFB(Actslikeawire)
← EB
-1s§_2r
{ 2h
p If
>µ µ,
1¥
""

/1-
¥+1M
= -1

P * 2021
< -
±
* 2014
-←EB
→ Drift -1
Depletion →d liesblwo.lv too.3V
Region Bwarginerdontennigl __E☐Cd) EDB Important devices .

**20H, 20192006.2005 1. LED 2. Solar cell C. Photodiode

Biasing of Diode
=
a :

forward biased No Biasing Reverse Biased

Forward Bias
• •
•

Reverse Bias L >

-1b¥ -1b¥ É+
=p 4¥/÷µ_+
=p :
o→
:| /
o→=±÷
:& ÷µ-_
Heavily doped] Upper layer thin I
• -

=± :3 ←- E

Energy released at
,
photons directly fallin
same
process .IE/2e9n
•

← EB Epd
•

junction → Light the depletion

region
. Solar cell The process
.

Ept ,
Current due to
minority cc ✓ Width Of Depletion Region •
Igorwardt intensity T.cc move under influence
:
is
simply accelerated by
decreases
✓ width of Depletion Region of E'☐ Reverse
biasing
.

•
used ,on remote control ,

increases * 2020 ✓ current due to

.

majority CC
burglar alarms communication
,

systems .

j -
 Semiconductors and it's Devices
Rectifier Transistors E

¥É¥Ñ
•
2015
1.
Half-wave Rectifier :
=p
Making N p n

P N P
Tinpot Toutput *2020
1-1>1--4
→ -

IT
{ § § n-noinput-ioutputemm.ge# to ↳
* collector
Output
input µ 1--1--0 •

Highly doped Base •

Moderately doped
Moderate width tightly doped
-

• thick
Forward Biased thin
Biased
'

Rectifier
•

2. Full Wave :
•
Reverse
t, I
"
1-11-1>1--1 →
Uoutput __ 20
input so that
majority Base is
lightly To attract
majority cc
&{
•
"
-

§ # Toutput =
Tinpot charge carriers can doped , soit wont
be able to recombine
that base couldn't
be
pushed towards
# Lp,# Output
2 recombine with
Input with all cc
coming
.

Base
from emitter

Dz
IE =
IB + Ic .

=DBNPN -
CB transistor =DBNPN -
CE transistor

" R'
wRmEn RB
gIc=Io
=
C
Minute B Muttu
-

Ic=I|
. - - - - - -

→gmwm
N
- - - - - -

a-
-

[IE=Ii ☐

⑧ I☐=Ii
E

¥
"
V0 __
VCB V0
Vcc =VcE
VEE VBB
D= If
IE - - - - iv. - - -
B=¥☐ - -
- -
- -

VEE Vi VBE IERE VBB

,¥É=
__ =
+
* 2015
IBRBTVBE
Vcc V0 1- Icrc
¥ Vcc
=

Icrc
,

V0
phase cliff +
-_
'

01-180 .gg,
.

=
Vec -

ICRC
* 2018 , 1. Vi=O VolMaximum) No
* 2017,2016 2013,2012 2009,2006 As long as ,
-4=0
, ,

[The transistor :
cutoff state]
!
I 1
' '

d. Current
Gain Ict Vod
,
2. Vit
p=I§q
: ;
;
q ;
,

Active State :
Amplifier ! I
2.
Voltage Gain Ug ,
-
IE 3. v. becomes so small that , →

-4?
↳B further change Inui will
'

[ Works as a switch

3. Resistance bring non-linear

change ,on switched off switched ON
Gain ,
Rg=R£ ,
Vo

Transistor → Saturation state Yow (5) high

t

4. Power
Gain
__vgB=Ygg÷=piRg