Si1026X

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

V(BR)DSS(min) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) • Halogen-free Option Available
• Low On-Resistance: 1.40 Ω
60 1.40 at VGS = 10 V 1 to 2.5 500
• Low Threshold: 2 V (typ.) RoHS
COMPLIANT
• Low Input Capacitance: 30 pF
• Fast Switching Speed: 15 ns (typ.)
• Low Input and Output Leakage
• ESD Protected: 2000 V
• Miniature Package

BENEFITS
SC-89
• Low Offset Voltage
S1 1 6 D1 • Low-Voltage Operation
• High-Speed Circuits
G1 2 5 G2 Marking Code: E • Low Error Voltage
• Small Board Area
D2 3 4 S2

APPLICATIONS
Top View • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Ordering Information: Si1026X-T1-E3 (Lead (Pb)-free)
Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free) • Battery Operated Systems
• Solid-State Relays

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5s Steady State Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
TA = 25 °C 320 305
Continuous Drain Current (TJ = 150 °C)a ID
TA = 85 °C 230 220
mA
b IDM - 650
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a IS 450 380
TA = 25 °C 280 250
Maximum Power Dissipationa PD mW
TA = 85 °C 145 130
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.

Document Number: 71434 www.vishay.com

S-80643-Rev. C, 24-Mar-08 1
Si1026X
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 µA 60
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 1 2.5
VDS = 0 V, VGS = ± 10 V ± 150
Gate-Body Leakage IGSS nA
VDS = 0 V, VGS = ± 5 V ± 50
VDS = 60 V, VGS = 0 V 1 µA
Zero Gate Voltage Drain Current IDSS
VDS = 60 V, VGS = 0 V, TJ = 85 °C 10
VDS = 10 V, VGS = 4.5 V 500
On-State Drain Currenta ID(on) mA
VDS = 7.5 V, VGS = 10 V 800
VGS = 4.5 V, ID = 200 mA 3.0
Drain-Source On-Resistancea RDS(on) VGS = 10 V, ID = 500 mA 1.40 Ω
VGS = 10 V, ID = 500 mA, TJ = 125 °C 2.50
Forward Transconductancea gfs VDS = 10 V, ID = 200 mA 200 mS
a VSD VGS = 0 V, IS = 200 mA 1.40 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Qg 600
Gate-Source Charge Qgs VDS = 10 V, ID = 250 mA, VGS = 4.5 V 120 pC
Gate-Drain Charge Qgd 225
Input Capacitance Ciss 30
VDS = 25 V, VGS = 0 V,
Output Capacitance Coss 6 pF
f = 1 MHz
Reverse Transfer Capacitance Crss 3
Switchingb, c
Turn-On Time t(on) VDD = 30 V, RL = 150 Ω 15
ns
Turn-Off Time t(off) ID = 200 mA, VGEN = 10 V, RG = 10 Ω 20
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY,, not subject to production testing.
c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 71434

2 S-80643-Rev. C, 24-Mar-08
 Si1026X
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0 1200
6V
VGS = 10 thru 7 V TJ = - 55 °C
0.8 5V
900

I D - Drain Current (mA)

I D - Drain Current (A)

25 °C
0.6
125 °C
600
4V
0.4

300
0.2

3V

0.0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

4.0 50

3.5 VGS = 0 V
f = 1 MHz
40
RDS(on) - On-Resistance (Ω)

3.0
C - Capacitance (pF)

2.5
30

2.0 VGS = 4.5 V

Ciss

1.5 20
VGS = 10 V

1.0 Coss
10
0.5
Crss
0.0 0
0 200 400 600 800 1000 0 5 10 15 20 25

ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

7 2.0

6 VDS = 10 V VGS = 10 V at 500 mA

VGS - Gate-to-Source Voltage (V)

ID = 250 mA 1.6
R DS(on) - On-Resistance

5
VGS = 4.5 V
(Normalized)

1.2
4 at 200 mA

3
0.8

2
0.4
1

0 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

Document Number: 71434 www.vishay.com

S-80643-Rev. C, 24-Mar-08 3
Si1026X
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000 5

VGS = 0 V
4

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

100
3
TJ = 125 °C

2 ID = 500 mA
10 TJ = 25 °C
ID = 200 mA
1
TJ = - 55 °C

1 0
0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.4

0.2
ID = 250 µA
VGS(th) Variance (V)

-0

- 0.2

- 0.4

- 0.6

- 0.8
- 50 - 25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Threshold Voltage Variance Over Temperature

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 500 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71434.

www.vishay.com Document Number: 71434

4 S-80643-Rev. C, 24-Mar-08
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1