Electrical Science

Lecture-13-15: Diodes

BITS Pilani Dr. Navneet Gupta

Pilani Campus Department of Electrical and Electronics Engineering
 Lecture - 13
Introduction

• Diode is a non-linear element.

• Aim: circuit analysis with nonlinear circuits.
• Electric circuit materials may be classified as:
conductors (metals)
semiconductors, and
insulators
Based on their ability to conduct electricity (in terms of
conductivity)
or their ability to resist electricity (in terms of resistivity).

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Semiconductors
First let us see how semiconductors are different from metals
If no voltage is applied to a metal, then
the random motion of the electrons
results in zero average current.
The speed of electrons due to electric field is
called drift speed (u, m/s) which is u = µ.
Ē
Mobility of electrons

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 i Nqu
J   nqu
A LA

J  nqE  E

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Example:

A copper wire with a cross- sectional area of 1 (mm2 or 10-6

m2) carry a current of 0.4 A. The conductivity of copper at
20°C (293 K) is 05.78x107 ℧/m. The free-electron
concentration is 8.43 x 1028 m-3.
Find
i) Electric field strength E
E=u/µ
ii) Resistance of the Cu wire
µ =  / n.q
i Nqu
J   nqu
A LA

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Semiconductors

  nq
Free electron
concentration

1028 /m3 -Metals

1.5 x 1016 /m3-Silicon
2.5 x 1019 /m3-Germanium
107 /m3 -Insulator

At low temperatures, this type of material acts as an insulator.

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Semiconductors:
At room temperature

In a pure (intrinsic) semiconductor: n = p= ni

Recombination occurs when a free electron fills a hole.
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Difference between metal &
semiconductor

Metal Semiconductor
1. Conduction is due to 1. Conduction is due to
electrons, unipolar. electrons and holes, bipolar.

2. J = n.q..Ē 2. J = (n.n + p.p).q.Ē

 J=.Ē
3. Conductivity decreases 3. Conductivity increases
with increase in temperature. with increase in temperature.

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Doped semiconductors
When an “impurity” is added to a semiconductor crystal,
it is said to be doped semiconductor.
“Impurity” is small amount of element, called dopant.

(a) n-type Si with donor (arsenic) and (b) p-type Si with acceptor (boron).
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Mass-Action law

According to mass-action law, regardless of the

amount of doping of a semiconductor, under thermal
equilibrium
n.p = ni2

where n is the free-electron concentration.

p is the hole concentration.
ni is the intrinsic concentration.

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• Doped semiconductor must
be electrically neutral,
under thermal equilibrium.
ND +p = NA + n
• For n-type semiconductor,
n > > p. and NA =0
n  ND and
p  ni2 / ND
where ND is concentration of
donor atoms/ions.
• For n-type semiconductor,
J ≈ n.q.n.E = .E
  ≈ n.q.  n
 Similarly
• For p-type semiconductor, p > > n.

• p  NA and n  ni2 / NA

where NA is concentration of acceptor atoms.

• For p-type semiconductor, J ≈ p.q.pE = .E

  ≈ p.q.p
 The p-n junction
Barrier potential or Built in voltage
V0= VT.ln(p1/p2) = VT.ln (pp/pn)
V0= VT.ln(n1/n2) = VT.ln(nn/np)

V0 = VT.ln[NA/(ni2/ND)] = VT.ln(NA ND/ni2)

• The barrier potential, v0 depends on
1. doping level
2. temperature
3. acceptor concentration
4. donor concentration
5. type of semiconductor
 Lecture - 14
The Junction Diode

Real Component
Appearance

Symbol

Actual photo of the

diode

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The Junction Diode

Formation of Depletion Region

Diffusion Current
Drift Current
Net current = zero
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Junction Diode
 Diode Equation

Reverse Saturation Current

VT =T/11,586
 (eta) is emission coefficient
(1 for Ge and 2 for Si)

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 Diode behavior
Cut-in Voltage

Ge Diode Si Diode

The saturation current Is approximately doubles for every rise of 10° C.

Temperature Dependence

By decreasing the voltage appropriately, we can

compensate for the increase in temperature.
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 Diode Circuits
v1 = v + R.i (by K.V.L.)
Thus i = -(1/R).v + (v1/R)

Quiescent operating
Operating point point (or operating
point, or Q point).
Load Line

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 Lecture - 15
Example
• A Si diode has a saturation current of 10
nA at 300 K. Given that v1 = 1 V and R =
100 Ω. Find i and v.
i = Is (ev/vT -1)
v = VT ln (i / Is + 1)
v1 = v + R.i (by K.V.L.)

For v = 0.5 V
i = 5 mA
i  3.4mA
300  5m 
v  0.66V v  2. ln   1  0.68V
11586  10n 
Example: P6.25

+ V1 -
NOTE: Check the
(a) R2 = 1.25 kΩ biasing
i1
i2 0.558 mA
(b) R1 = 903 Ω

= 0.742 mA
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Example: P6.31

NOTE: Check the

v1 = - 5.96 V biasing

v2 = - 0.036 V

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Example: P6.32

+ V1 - + V2 -
v1 = 0.772 V
v2 = 0.736 V

R = 299 Ohms
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The Ideal Diode

An ideal diode is a two-terminal device whose

i-v characteristic is

ON

OFF

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 Circuit analysis containing diodes
For positive input For negative input
Assume D  ON Assume D  OFF

Replace D by Finally check the Replace D by

Short Circuit output voltages in Open Circuit
positive and negative
input conditions

Check the Check the

assumption (i.e) If i < 0; assumption (i.e)
the value of i D  ON the value of v
is not true
If i > 0; D  ON If v ≤ 0; D OFF
is confirmed is confirmed
Example: (Half Wave Rectifier)

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