JMSH0804AE

85V 3.6m N-Ch Power MOSFET

Features Product Summary

• Ultra-low RDS(ON) Parameter Value Unit

VDS 85 V
• Low Gate Charge
VGS(th)_Typ 2.8 V
• 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 139 A
• Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.6 m

• Halogen-free and RoHS-compliant

Applications
• Power Managerment in Telecom., Industrial Automation, CE

• Current Switching in DC/DC & AC/DC Sub-systems

• Motor Driving in Power Tool, E-bike

TO-263-3L

D
D

G
G
S S

Ordering Information
Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs)
JMSH0804AE-13 TO-263-3L 3 SH0804A 1 -55 to 150 13-inch Reel 800

Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)

Parameter Symbol Value Unit
Drain-to-Source Voltage VDS 85 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain TC = 25°C 139
ID A
Current (1) TC = 100°C 87
Pulsed Drain Current (2) IDM 444 A
Avalanche Current (3) IAS 60 A
Avalanche Energy (3) EAS 180 mJ
TC = 25°C 156
Power Dissipation (4) PD W
TC = 100°C 63
Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

RDS(ON) vs. VGS Gate Charge

10 10
ID = 20A VDS = 40V
8 8 ID = 20A

6 6
RDS(ON) (m)

VGS (V)

4 4

2 2

0 0
2 4 6 8 10 0 20 40 60 80
VGS (V) Qg (nC)

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 JMSH0804AE

Electrical Characteristics (@ TJ = 25°C unless otherwise specified)

Parameter Symbol Conditions Min. Typ. Max. Unit
STATIC PARAMETERS
Drain-Source Breakdown Voltage V(BR)DSS ID = 250A, VGS = 0V 85 V
VDS = 68V, VGS = 0V 1.0
Zero Gate Voltage Drain Current IDSS A
TJ = 55°C 5.0
Gate-Body Leakage Current IGSS VDS = 0V, VGS = ±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 2.8 4.0 V
Static Drain-Source ON-Resistance RDS(ON) VGS = 10V, ID = 20A 3.6 4.5 m
Forward Transconductance gFS VDS = 5V, ID = 20A 42 S
Diode Forward Voltage VSD IS = 1A, VGS = 0V 0.7 1.0 V
Diode Continuous Current IS TC = 25°C 156 A

DYNAMIC PARAMETERS (5)

Input Capacitance Ciss 3783 pF
Output Capacitance Coss VGS = 0V, VDS = 40V, f = 1MHz 1373 pF
Reverse Transfer Capacitance Crss 22 pF
Gate Resistance Rg VGS = 0V, VDS= 0V, f = 1MHz 1.2 

SWITCHING PARAMETERS (5)

Total Gate Charge (@ VGS = 10V) Qg 63 nC
Total Gate Charge (@ VGS = 6.0V) Qg VGS = 0 to 10V 43 nC
Gate Source Charge Qgs VDS = 40V, ID = 20A 14 nC
Gate Drain Charge Qgd 21 nC
Turn-On DelayTime tD(on) 14 ns
Turn-On Rise Time tr VGS = 10V, VDS = 40V 22 ns
Turn-Off DelayTime tD(off) RL = 2, RGEN = 6 65 ns
Turn-Off Fall Time tf 37 ns
Body Diode Reverse Recovery Time trr IF = 15A, dIF/dt = 100A/s 54 ns
Body Diode Reverse Recovery Charge Qrr IF = 15A, dIF/dt = 100A/s 50 nC

Thermal Performance
Parameter Symbol Typ. Max. Unit
Thermal Resistance, Junction-to-Ambient RJA 45 55 °C/W
Thermal Resistance, Junction-to-Case RJC 0.65 0.80 °C/W

Notes:
1. Computed continuous current assumes the condition of TJ_Max while the actual continuous current depends on the thermal & electro-mechanical
application board design.
2. This single-pulse measurement was taken under TJ_Max = 150°C.
3. This single-pulse measurement was taken under the following condition [L = 100H, VGS = 10V, VDS = 40V] while its value is limited by
TJ_Max = 150°C.
4. The power dissipation PD is based on TJ_Max = 150°C.
5. This value is guaranteed by design hence it is not included in the production test.

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 JMSH0804AE

Typical Electrical & Thermal Characteristics

150 30
VGS = 10V VDS = 5.0V
VGS = 6.0V
120 VGS = 5.5V 24
VGS = 5.0V VGS = 4.5V

90 18
ID (A)

ID (A)
TJ = 125°C
60 12
VGS = 4.0V
TJ = 25°C

VGS = 3.8V
30 6

0 0
0 0.4 0.8 1.2 1.6 2 1 2 3 4 5
VDS (V) VGS (V)

Figure 1: Saturation Characteristics Figure 2: Transfer Characteristics

8 3
VGS = 10V

2.5 ID = 20A

6
Normalized RDS(ON)

2
RDS(ON) (m)

VGS = 10V
4 1.5

1
2
0.5

0 0
0 10 20 30 40 50 60 -100 -50 0 50 100 150 200
ID (A) Temperature (C)

Figure 3: RDS(ON) vs. Drain Current Figure 4: RDS(ON) vs. Junction Temperature

100 10000
Ciss

10 Coss
1000
Capacitance (pF)

TJ = 125°C
1
IS (A)

100

0.1
TJ = 25°C
Crss
10
0.01

0.001 1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80
VSD (V) VDS (V)

Figure 5: Body-Diode Characteristics Figure 6: Capacitance Characteristics

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 JMSH0804AE

Typical Electrical & Thermal Characteristics

150 180

150
120

120
90
ID (A)

PD (W)
90

60
60

30
30

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (C) TCASE (C)

Figure 7: Current De-rating Figure 8: Power De-rating

1000.0 500
Limited by
1.0s
RDS(ON)
100.0 400

10s

10.0 300
PD (W)
ID (A)

100s

1.0 200
1.0ms
10ms
TJ_Max = 150°C DC
0.1 100
TC = 25°C

0.0 0
0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100
VDS (V) Pulse Width (s)

Figure 9: Maximum Safe Operating Area Figure 10: Single Pulse Power Rating, Junction-to-Case

10
Duty Cycle = Ton/TPeak
TJ = TC + PD x ZJC x RJC
Thermal Resistance, ZJC
Normalized Transient

RJC = 0.65°C/W

0.1
Duty = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

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 JMSH0804AE

TO-263-3L Package Information

Package Outline
Package Outline

MILLIMETER
DIM.
MIN. NOM. MAX.
A 4.24 4.77
A1 2.30 2.89
E A2 0.00 0.10 0.25
C1
b 0.70 0.96
b1 1.17 1.70
C 0.30 0.60
C1 1.15 1.42
A
D1

D 14.10 15.88
D

A2
D1 8.50 9.60

A1 E 9.78 10.36
L1

b1
L 1.78 2.79

L1 1.75
L

e b C e 2.54

Recommend
Recommended Soldering Footprint
Footprint
10.41
7.01

15.99

1.10
3.50

5.08

DIMENSIONS: MILLIMETERS

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