FACULTY OF ELECTRICAL ENGINEERING

(ELE 643)

MINIPROJECT TASK 1

NAME OF LECTURER
Dr. Sukreen Hana Herman

NAME STUDENT ID GROUP

Muhammad Azim Izzudin Bin A’zmi 2021320731 EE241M6A

1
Question 5A

Figure1: Ioff1 Figure 2 : Vt1

Figure 3 : Ioff2 Figure 4 : Vt2

2
Question 5B

Figure 5: Ion1(0.5V)

Figure 6: Vdsat1(0.5V) = 0.243V

3
 Figure 7: Ion2(0.85V)

Figure 8: Vdsat2(0.85V)= 0.593V

4
 Figure 9: Ion3(1.2V)

Figure 10: Vdsat3(1.2V)=0.943V

5
Question 5C

Figure 11: Id-Vd when Vgmin -1.5V and Vgmax 1.5V

Figure 12: Id-Vg when Vgmin -1.5V and Vgmax 1.5V

6
Question 5E

Figure 13: Id-Vg characteristic with Lsd=45nm , Lc=43nm , toc=2.1nm ,

Djunc=10nm

7
Figure 14: Id-Vg characteristic when Lsd=60nm , Lc=60nm , toc=1.5nm ,
Djunc=20nm

Figure Vt (0.05) Vt(1)

13 0.2 0.19
14 0.2 -

Table 1 : Result of Vt(0.05) and Vt(1.0)

8
Question 5F

Figure 15 : High Source-Drain Length

9
Figure 16: Low Source-Drain Length

Figure 17: High Channel Length

10
 Figure 18 : Low Channel Length

Figure 19: High Oxide thickness

11
Figure 20 : Low Oxide Thickness

Figure 21: High Junction Depth

12
Figure 22 : Low Junction Depth

13
 Figure 23: Changing channel nodes from 22 to 15

Figure 24 : Changing oxide nodes from 15 to 10

14
Question 6

15
 Question 7

Simulation Process References

Parameter Parameter
Oxide Higher Oxidation https://www.researchgate.net/figure/Effect-of-variation-of-
Thickness thickness, higher oxide-thickness-tox-on-threshold-voltage-
voltage
Source/Drain Smaller length https://core.ac.uk/download/pdf/236407484.pdf
Length equals to higher
threshold voltage
Channel Higher channel https://utpedia.utp.edu.my/id/eprint/4037/1/11794_FinRep.pdf
Length length , higher
threshold voltage
Junction As the junction ripublication.com/irph/ijece/ijecev4n3__3.pdf
Depth depth is higher ,
the source/drain
concentration is
increased

Table 2 : Effect of parameter on threshold voltage

16