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Abmee
this ine
betveen 23- (sommer stie
egustriel Pone. Is Varies
: June 23) to 23°(wintey sol hce December 22)
Jhe ermala is
d- 2345' sn(362
366
(N +28)
gererhlan Phoyaltic Cof?
ofe
thefalt nd
Fist Genektliat
golty ond sinyle juntion device.
brye-oree, high
GCl Consit Pevent
ond lobour inft shich
-lechrloies invoko Igh anorgy
reduetin froductin osti.
erny signican fgtes in
Clompla, silicon
Crntalline
CSinge
Holt-juntin Cell.
Secatd Generhiod
-wteyiels
"Mterials develofol to odies elergy reguiremenf an
pdacto Cost of so lor Calls
"Alternefive manufaeturioy techaiyues such va fbur deflsih
ove odenhges they edice high
tenfa
frogesiny sigrdcnty
eompe G Jhin Am Silicon
QCJie (Catdaion lelarile )
GCalnselGAer Indium Qielenile)
ticroware
(5Ultavidlet
Fomma
1Cone Phtovoltcie et.
J he genersthian "¢ Volfage ocos the N junetion
a semiconductr dve to the obeotphn ot ight
feduhin.
6Low sfeae
sft heot.
Eorily wajable.
low Cot
SEasy fo horle
6) stofe the Pinciple f wa kitg Solor Coll.
It wnks in
in the Rincife t Phtovetaci eect
whon the light re och tee PNjunetin, the Photn Com
Dumber oleetrons and holes. The ineident iyht breuls the thern
equilibrium Corndihn. ef the unctin.
So that the Iee eleetrn qoes to the N
goes tyfe. semicmdud
ond free holes go to th PP tye semi condutey hee neN
holes end electres onos go to the resfictive junction Cun yoat
beution is E
TI2' Con vwrt it into minut
Lol:
he Mechanism os tollawing
Cist |he sunlght is obsorbed by solor
in the suloy se
obsarke! li_hh Cluse electers in the mot
At same Hime thay
he enegy
increes
Lee to Move.
8u hese elecoytrors sy n sht time in the
high en level bo~re eturniy to their lower onou
PN junctin.
w-16o(LsI 12)
yttode angle
Hs the onye ode by the ro dal lire joity te
lo cation with center e t eth ond the
the oje din
the Jine the equatoriel Pane.
Vafies tron o to qi at the
5) Angle ineidancer 9
anle betveon the Jine tht iat the sun
TBs the
ond the onge that Biot stright out et opAnel.
ue the odontger ond dialonhge o
olentical Vufßr De Posiion.
A tonmie layer Defiti.
A. ond dide. (CvO),
Advontoger:
GHigh Coatiny hwdne
God odhesien
6oni famity Cotny
high grow th otes, Good ef ducibility. G..J ilm gwhty
Oisodvonte
CHigh temfete fasa
be
Con be cootJ.
6Jhe use Blommobe toxic onl coflosie ecarsa. goses mohe
it unge
ody and ds od
energy
Vorious tyfes tola cell on
Confere he ercierky themt
0orocrytalline silico? cell
Its the cl thot lveod from re silicon
thot it hos very hiuh efficiencq. The Ntye jun
Aa
6Abrorbar Pate
IH mode
Perte.Ts Covered with
Dork material to inCrease the a bsabtiorn. |he
(oting is to increase he obs btin end decfeese
the eet cmition.
p) Flow Rsaget
ow fe48s ii wse! to transter the heot frm
the obrber to the leid. L Lß Flaid is ly aid
the flw fosoger is tobe ofoched to the
absorber ,ond i the Fluid is air, the low
below the obsor ber to reduce
Poseges
the heot loses.
3) (over Plkte
Lts transRont to olw tronsimitin
Cnerg y to the obs ber ond to Potect the
bo low a it Comfanenti.
5)Enclosure
house thet cntuin oll fhe ro
fe metwl
Ity the
I Revides the fatection the
of the colleetor. so
Cunmf3nedts. I jnsulafe to edre te
the alleta
hoot loss
Nite fhe exfesion fa onglo of inciderte ?
Jote He
eyfesjon da
Nertical surfoce . Horizentol surface ond surfoce
focity South.
incidene ongk
Cst = sino ( sin S Coß+ Coss Cosy Cos wsinf) +Cosd
Cost Cos wCusß- sinb cy sin ) +Cos6sinyY sin
sin
(14)
De ine Sulor Lnslhet.
[! the totol olor eneras fa dia tel on aonit
furfoce arta OVer
o certin Period of time
de no te dd oy H ond the unit
is ItWH/of
ose its the measorme nt used to ctimate
esimote the
outat rom solor PV stem.
erffesseliaterms t eKT/a
|he enerq 4 Q / lhoar
the drm
drm the sensitie n stort chang
Sunshine hit