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Light Dependent Resistance Project Report Physics
Light Dependent Resistance Project Report Physics
Submitted by
Gopi Nath Sah
Class XII A
Page 1 of 23
Acknowledgement
Page 2 of 23
Bonafide certificate
This is to certify that Gopi Nath Sah of
class XII A has successfully completed the
investigatory project on “TO STUDY
VARIATION OF CURRENT USING A LDR"
under the guidance of Mrs. Alka Chopra
.This project is absolutely genuine and
doesn't not involve in any kind of
plagiarism. This is in partial fulfillment of
Physics practical examination CBSE 2016.
Department of
Physics
(Mrs Alka
Chopra)
Page 4 of 23
ACKNOWLEDGEMENT
i.
BONAFIDE CERTIFICATE
ii.
1. INTRODUCTION
2
2. AIM & APPARATUS
3
3. PHOTORESISTOR
DISCOVERY AND 4-5
MECHANISM
4. PRINCIPLE & THEORY
5-6
5. BRIEF DESCRIPTION OF
6-8
COMPONENTS
6. APPLICATIONS
9
7. PROCEDURE
10
8. OBSERVATIONS
11-14
9. RESULT &
CONCLUSIONS 15
10. BIBLOGRAPHY
16
INDEX
Page 5 of 23
APPARATUS:
Light Dependent Resistor(LDR),Connecting Wires,
Source of different power rating(bulbs), Bulb
Holder , Metre scale, Multi Meter Battery.
Page 6 of 23
Photo resistor
discovery
Photo resistors, or light dependent
resistors have been in use for very
many years. Photo resistors have
been seen in early forms since the
nineteenth century when
photoconductivity in selenium was
discovered by Smith in 1873. Since
then many variants of
photoconductive devices have been
made.
Much useful work was conducted by
T. W. Case in 1920 when he published
a paper entitled "Thalofide Cell - a
new photo-electric cell".
Other substances including PbS, PbSe
and PbTe were studied in the 1930s
Page 7 of 23
Photoresistor mechanism
A photoresistor or photocell is a component that uses a
photoconductor between two contacts. When this is exposed to
light a change in resistance is noted. Photoconductivity - the
mechanism behind the photoresistor - results from the
generation of mobile carriers when photons are absorbed by
the semiconductor material used for the photoconductor. While
the different types of material used for light dependent resistors
are semiconductors, when used as a photo-resistor, they are
used only as a resistive element and there are no PN junctions.
Accordingly the device is purely passive.
PRINCIPLE
This project is based on Light Dependent Resistance
(L.D.R.). Light Dependent Resistance [LDR] is a resistance, in
which opposing power of current depends on the presence of
quantity of light present, i.e. the resistance of LDR increases or
decreases, according to quantity of light which falls on it.
ADVANTAGES
Collection of parts of the circuit are easily available.
Accuracy of this circuit is more than accuracy of other
circuits.
By using laser, it can be used for security purposes.
It can be used to stop the wastage of electricity.
The cost of circuit is low.
This circuit saves the men's power.
USES
It can be used in street lights.
It can be used in mines areas.
It can be used in hilly areas.
By using laser, it can be used for safety purposes.
It can be used in frontier areas.
It can be used in houses.
It can be used in jail lights.
BRIEF DISCRIPTION OF COM PONENTS
1. TRANSISTOR:-When a thin slice of p-type is sandwiched
between two blocks of n-type, then n-p-n transistor is formed. It
consists of emitter, base, and collector. In the project, common emitter
n-p-n transistor ( BC-147 & SL-100) is used.
2. DIODE:- When a p-type and n-type semiconductors are joined a
diode is formed. It conducts when forward biased and does not
conduct when reverse biased. In the project, IN-4007diode is used.
3. RELAY:- It helps to contact and discontact. In the project, we use
relay of 6 ohms.
Page 10 of 23
Type Passive
Working Photoconductivity
principle
Electronic symbol
Applications
PROCEDURE
1. Choose a specific position for the
source and mount it using a holder,
make sure it is stable.
2. Select the bulb with the lowest
power rating and connect it to the
holder as shown in the figure.
Page 14 of 23
OBSERVATIONS :-
The experiment has been conducted by using various sources with
different power ratings. Voltage of the battery = 6 V.
OBSERVATIONS TABLE :-
Page 15 of 23
Distance
between Source(Bulb)
S.No. LDR and Of power Resistance(Ω ) Current(mA)
the source imputs(W)
d(cm)
1. 10 15 1310 4.58
2. 10 30 770 7.00
3. 10 60 285 21.00
1. 20 15 2800 2.14
2. 20 60 650 9.00
1. 30 15 4300 1.4
2. 30 60 1000 6.00
Distance between
S.No. LDR and the Resistance(Ω ) Current(µA)
source d(cm)
1. 4 1010 5.94
2. 6 1350 4.44
3. 8 1490 4.03
4. 10 1610 3.73
5. 12 1740 3.45
6. 14 1880 3.19
7. 16 2300 2.61
8. 18 2540 2.36
9. 20 2800 2.14
Distance between
S.No
LDR and the Resistance(Ω ) Current(mA)
.
source d(cm)
1. 4 105 57
2. 6 180 33
3. 8 230 26
4. 10 280 21
5. 12 360 16
6. 14 440 13
7. 16 500 12
8. 18 575 10
Page 18 of 23
9. 20 675 8.8
Distance between
S.No
LDR and the Resistance(Ω ) Current(mA)
.
source d(cm)
1. 4 80 75
2. 6 130 46
3. 8 170 35
Page 19 of 23
4. 10 205 29
5. 12 270 22
6. 14 300 20
7. 16 360 16
8. 18 410 14
9. 20 460 13
10. 22 525 11
11. 24 585 10
SOURCES OF ERROR
Biblography