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Description
The ACST4 series belongs to the ACS / ACST
OUT power switch family. This high performance
device is suited to home appliances or industrial
systems and drives loads up to 4 A.
G
This ACST4 switch embeds a Triac structure with
COM
OUT a high voltage clamping device to absorb the
G COM inductive turn-off energy and withstand line
DPAK TO-220FPAB transients such as those described in the
IEC 61000-4-5 standards. The ACST410 needs a
low gate current to be activated (IGT < 10 mA) and
still shows a high electrical noise immunity
Features complying with IEC standards such as
IEC 61000-4-4 (fast transient burst test).
• Triac with overvoltage protection
• Low IGT (<10 mA) or high immunity Figure 1. Functional diagram
(IGT < 35 mA) version OUT
• High noise immunity: static dV/dt > 1000 V/µs
• TO-220FPAB insulated package:
– complies with UL standards (File ref :
E81734)
– insulation voltage: 2000 VRMS G
Benefits
COM
• Enables equipment to meet IEC 61000-4-5
• High off-state reliability with planar technology Table 1. Device summary
• Needs no external overvoltage protection Symbol Value Unit
• Reduces the power passive component count IT(RMS) 4 A
• High immunity against fast transients VDRM/VRRM 800 V
described in IEC 61000-4-4 standards
IGT(ACST410) 10 mA
Applications IGT(ACST435) 35 mA
1 Characteristics
TO-220FPAB Tc = 102 °C
4
DPAK Tc = 112 °C
IT(RMS) On-state rms current (full sine wave) A
DPAK with 0.5
Tamb = 60 °C 1
cm² copper
IDRM Tj = 25 °C 20 µA
VOUT = VDRM / VRRM MAX
IRRM Tj = 125 °C 0.5 mA
1. For both polarities of OUT pin referenced to COM pin
DPAK 2.6
Rth(j-c) Junction to case for full cycle sine wave conduction
TO-220FPAB 4.6
°C/W
TO-220FPAB 60
Rth(j-a) Junction to ambient
SCU (1)= 0.5 cm² DPAK 70
1. SCU = copper surface under tab
Figure 2. Maximum power dissipation versus Figure 3. On-state RMS current versus case
on-state RMS current temperature (full cycle)
P(W) IT(RMS)(A)
6
α = 180° 180° 5
α=180°
5 DPAK
4
TO220FPAB
4
3
3
2
2
1
1
TC (°C)
IT(RMS)(A)
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125
Figure 4. On-state RMS current versus ambient Figure 5. Relative variation of thermal
temperature (free air convection, full cycle) impedance versus pulse duration
1.5
DPAK with copper
surface = 0.5 cm2
TO-220FPAB
1.0 1.0E-01
0.5
Ta(°C) Tp(s)
0.0 1.0E-02
0 25 50 75 100 125 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 6. Relative variation of gate trigger Figure 7. Relative variation of holding current
current (IGT) and voltage (VGT) versus junction (IH) and latching current (IL) versus junction
temperature (typical values) temperature (typical values)
I GT , V GT [T j ] / I GT , V GT [T j = 25 °C ] I H , I L [T j ] / I H , I L [T j = 25 °C ]
3.0 2. 5
2.5 I GT Q3
2. 0
2.0 I GT Q1-Q 2
1. 5
1.5
1. 0
1.0 V GT Q 1-Q2-Q 3
IL
0.5 0. 5 IH
T j (°C )
T j (°C )
0.0 0. 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Figure 8. Surge peak on-state current Figure 9. Non repetitive surge peak on-state
versus number of cycles current versus sinusoidal pulse width
25 One cycle
Non repetitive 100
Tj initial=25 °C I TS M
20
15
10
10
Repetitive
TC=102°C
5
Number of cycles tp (ms )
0 1
1 10 100 1000 0.01 0.10 1.00 10.00
Figure 10. On-state characteristics Figure 11. Relative variation of critical rate of
(maximum values) decrease of main current (dI/dt)c versus
junction temperature
ITM(A) (dI/dt)c [Tj] / (dl/dt)c [Tj = 125 °C]
100
8
Tjmax:
Vto = 0.90 V 7
Rd = 110 mΩ
6
10 4
2
Tj = 125 °C 1
Tj = 25 °C Tj(°C)
VTM(V)
1 0
0 1 2 3 4 5 25 50 75 100 125
Figure 12. Relative variation of static dV/dt Figure 13. Relative variation of leakage current
immunity versus junction temperature versus junction temperature
(gate open)
dV/dt [Tj] / dV/dt [Tj = 125 °C] IDRM/IRRM [Tj; VDRM / VRRM] / IDRM/IRRM [Tj = 125 °C; 800 V]
6
1.0E+00
VD = VR = 536 V
VDRM = VRRM = 800V
5
Different blocking voltages
4 1.0E-01
VDRM = VRRM = 600 V
2 1.0E-02
VDRM = VRRM = 200 V
1
Tj(°C)
Tj(°C)
0 1.0E-03
25 50 75 100 125 25 50 75 100 125
Figure 14. Relative variation of the clamping Figure 15. Thermal resistance junction to
voltage (VCL) versus junction temperature ambient versus copper surface under tab
(minimum values)
VCL[Tj] / VCL [Tj = 25 °C] 5WK MD &:
1.15
1.10
1.05
1.00
0.95
0.90 (SR[\ SULQWHG ERDUG )5 H&8 P
Tj(°C) 6&X FPð
0.85
-50 -25 0 25 50 75 100 125
2 Application information
Compressor Compressor
AC Mains
PTC
AC Mains
Electronic PTC
ACST
starter
2
switch
ACST
Run
switch
Electronic
ACST thermostat
Rg
Rg Rg
Gate Gate
Driver
Power supply Power supply Driver
Universal motor
Stator Rotor
12V
AC Mains
Motor direction
setting
MCU
ACST
Speed motor Rg
regulation
Vcc
MCU
Figure 18. Overvoltage ruggedness test circuit for resistive and inductive loads for
IEC 61000-4-5 standards
R = 23 Ω, L = 2 µH, Vsurge = 2 kV
Rg = 220 Ω (ACST410-8), 68 Ω (ACST435-8)
Surge generator
2kV surge
Rgene
ACST4
AC Mains
Rg
Figure 19. Typical current and voltage waveforms across the ACST4 during
IEC 61000-4-5 standard test
Vpeak = VCL
3 Package information
A
H B
Dia
L6
L2 L7
L3
L5
D
F1
L4 F2
F E
G1
$
(
E F
/
'
'
(
$
/
H E F
H
/
9
$
Note: This package drawing may slightly differ from the physical package. However, all the
specified dimensions are guaranteed.
A
5.094
6.7
B 1.6
The device must be positioned within
0.05 A B
4 Ordering information
AC switch
Topology
T = Triac
On-state rms current
4=4A
Triggering gate current
10 = 10 mA
35 = 35 mA
Repetitive peak off-state voltage
8 = 800V
Package
B = DPAK
FP = TO-220FPAB
Delivery mode
TR = Tape and reel
Blank = Tube
5 Revision history
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