ALPHA & OMEGA

SEMICONDUCTOR
AOK065V120X2
1200 V αSiC Silicon Carbide
Power MOSFET

Features Product Summary

• Proprietary αSiC MOSFET technology
VDS @ TJ, max 1200 V
• Low loss, fast switching speeds with low RG
IDM 85 A
• Optimized drive voltage (VGS = 15 V)
RDS(ON), typ 65 mΩ
for broad driver compatibility
Qrr 155 nC
• Robust body diode and low Qrr
EOSS @ 800 V 36 µJ
100% UIS Tested
Applications
Renewable Industrial
• EV Charger • UPS
• Solar Inverters • SMPS
• Motor Drives

Pin Configuration
DD
Top View Bottom View (2)

G
G
(3) (1)
(2) SS
(1) (3)

Ordering Part Number Package Type Form Shipping Quantity

AOK065V120X2 TO-247-3L Tube 30/Tube

Absolute Maximum Ratings

(TA = 25°C, unless otherwise noted)

Symbol Parameter AOK065V120X2 Units

VDS Drain-Source Voltage 1200 V
VGS, MAX Maximum -8/+18
VGS,OP,TRANS Gate-Source Voltage Max Transient (A)
-8/+20 V
VGS,OP Recommended Operating (B) -5/+15
TC = 25°C 40.3
ID Continuous Drain Current
TC = 100°C 29.6 A
IDM Pulsed Drain Current (C)
85
EAS Single Pulsed Avalanche Energy (D)
250 mJ
PD Power Dissipation(C) 187.5 W
TJ, TSTG Junction and Storage Temperature Range -55 to 175 °C
TL Maximum lead temperature for soldering purpose, 1/8” from case for 5 seconds 300 °C

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 ALPHA & OMEGA
SEMICONDUCTOR
AOK065V120X2

Thermal Characteristics
Symbol Parameter AOK065V120X2 Units
RθJA Maximum Junction-to-Ambient (E,F)
40 °C/W
RθJC Maximum Junction-to-Case (G)
0.8 °C/W

Electrical Characteristics
(TA = 25°C, unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
STATIC
ID = 250 µA, VGS = 0 V, TJ = 25°C 1200 V
V(BR)DSS Drain-Source Breakdown Voltage
ID = 250 µA, VGS = 0 V, TJ = 150°C 1200 V
IDSS Zero Gate Voltage Drain Current VDS = 1200 V, VGS = 0 V 50 µA
IGSS Gate-Source Leakage Current VDS = 0 V, VGS = +15/-5 V ±100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 10 mA 1.8 2.8 3.5 V
TJ = 25°C 65 85 mΩ
RDS(ON) Static Drain-Source On-Resistance VGS = 15 V, ID = 10 A
TJ= 150°C 90 mΩ
gfs Forward Transconductance VDS = 20 V, ID = 20 V 12 S
VSD Diode Forward Voltage IS = 10 A,VGS = -5 V 4.1 5 V
DYNAMIC
Ciss Input Capacitance 1716 pF
Coss Output Capacitance 71 pF
Crss VGS = 0 V, VDS = 800 V, f = 1 MHz
Reverse Transfer Capacitance 5 pF
Eoss Coss Stored Energy 30 µJ
RG Gate Resistance f = 1 MHz 1.7 Ω
SWITCHING
Qg Total Gate Charge 62.3 nC
Qgs Gate Source Charge VGS = -5/+15 V, VDS = 800 V, 23.1 nC
ID = 20 A
Qgd Gate Drain Charge 23.7 nC
td(on) Turn-On Delay Time 14.6 ns
tr Turn-On Rise Time VGS = 0 V/+15 V, VDS = 800 V, 36.2 ns
td(off) Turn-Off Delay Time 20.8 ns
tf ID = 20 A, RG = 5 Ω
Turn-Off Fall Time 10.2 ns
Eon Turn-On Energy L = 120 µH 325 µJ
Eoff Turn-Off Energy FWD: AOK065V120X2 23 µJ
Etot Total Switching Energy 348 µJ
trr Body Diode Reverse Recovery Time 27 ns
Irm Peak Reverse Recovery Current IF = 20 A,dI/dt = 1560 A/us, 10 A
VDS = 800 V
Qrr Body Diode Reverse Recovery Charge 155 nC

Notes: with TA = 25°C.

A. < 1% duty cycle, f > 1 Hz
B. Device can be operated at VGS = 0/15 V. Actual operating VGS will
depend on application specifics such as parasitic inductance and dV/dt
but should not exceed maximum ratings.
C. The power dissipation PD is based on TJ(MAX) = 175°C, using junction-to-
case thermal resistance, and is more useful in setting the upper dissipa-
tion limit for cases where additional heatsinking is used.
D. L = 5 mH, IAS = 10 A, RG = 25 Ω, Starting TJ = 25°C.
E. The value of RθJA is measured with the device in a still air environment
F. The RθJA is the sum of the thermal impedance from junction to case RθJC
and case to ambient.
G. The value of RθJC is measured with the device mounted to a large heat-
sink, assuming a maximum junction temperature of TJ(MAX) = 175°C.
H. The static characteristics in Figures 1 to 8 are obtained using < 300 ms
pulses, duty cycle 0.5% max.
I. These curves are based on RθJC which is measured with the device
mounted to a large heatsink, assuming a maximum junction tempera-
ture of TJ(MAX) = 175°C. The SOA curve provides a single pulse rating.

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 ALPHA & OMEGA
SEMICONDUCTOR
AOK065V120X2

Typical Electrical and Thermal Characteristics

100 80
15 V 16 V 16 V
80 15 V
14 V 60
14 V 12 V
60
12 V 10 V
ID (A)

ID (A)
40
40
10 V VGS = 8 V
20
20

VGS = 8 V
0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS (V) VDS (V)
Figure 1. On-Region Characteristics TJ = 25°C Figure 2. On-Region Characteristics TJ = 175°C

110 2.00

100 1.75
On-Resistance, RDS ON (mΩ)

Norm alized On-Resitance

90 VGS = 15 V 1.50 VGS = 16 V

ID = 10 A ID = 10 A
80 1.25

VGS = 16 V
70 ID = 10 A 1.00 VGS = 15 V
ID = 10 A
60 0.75

50 0.50
-50 -25 0 25 50 75 100 125 150 175 200 -50 -25 0 25 50 75 100 125 150 175 200
Temperature (°C) Temperature (°C)
Figure 3. On-Resistance vs. Junction Temperature Figure 4. Normalized On-Resistance vs. Junction
Temperature
70 4.0

60 150ºC 3.5
VDS = 20 V 175ºC
Threshold Voltage, Vth(V)

50
3.0
40 VGS = VDS
ID (A)

2.5 ID = 10 mA
30
2.0
20 25ºC

1.5
10

1.0
0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 175 200
VGS (V) Temperature (°C)
Figure 5. Transfer Characteristics Figure 6. Threshold Voltage vs. Junction Temperature

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 ALPHA & OMEGA
SEMICONDUCTOR
AOK065V120X2

Typical Electrical and Thermal Characteristics (Continued)

-5 -4 -3 -2 -1 0 -5 -4 -3 -2 -1 0
0 0
-2 VGS = -5 V -2
VGS = -5 V -4 -4
VGS = 0 V
-6 -6
VGS = 0 V
-8 -8
-10 -10
ID (A)

ID (A)
VGS = 15 V -12 VGS = 15 V -12
-14 -14
-16 -16
-18 -18
-20 -20

VDS (V) VDS (V)

Figure 7. Body-Diode Characteristics at 25°C Figure 8. Body-Diode Characteristics at 175°C

15 10000
f = 1 MHz
VDS = 800 V CiSS VGS = 0 V
ID = 20 A
10
1000
Capacitance (pF)

COSS
VGS (V)

5 100

CrSS
0 10

-5 1
0 10 20 30 40 50 60 70 0 200 400 600 800 1000
Qg (nC) VDS (V)

Figure 9. Gate-Charge Characteristics Figure 10. Capacitance Characteristics

55 1000
50 900 VDS = 600 V
45 800 VGS = -5/+15 V
RG, ON = 2 Ω; RG, Off = 0 Ω
40
Sw itching Energy (uJ)

700 TJ = 25ºC
35 FWD: AOK065V120X2
Eoss (uJ)

600
30 EOSS
500 EON
25
20 400

15 300
10 200
5 100 EOFF
0 0
0 200 400 600 800 1000 0 5 10 15 20 25 30 35 40
VDS (V) ID (A)
Figure 11. Coss stored Energy Figure 12. Switching Energy vs. Drain Current

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 ALPHA & OMEGA
SEMICONDUCTOR
AOK065V120X2

Typical Electrical and Thermal Characteristics (Continued)

1400 1000 140

VDS = 800 V 900
1200 120
VGS = -5/+15 V 800

Turn-on Switching Energy (uJ)

RG, ON = 2 Ω; RG, Off = 2 Ω
Sw itching Energy (uJ)

TJ = 25ºC

Tutn-On dV/dt (V/ns)

1000 700 EON 100
FWD: AOK065V120X2
800 600
EON 80
500
600 60
400

400 300 40
200
200
dV/dt 20
100
EOFF
0 0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30
ID (A) RG, ON (Ω)
Figure 13. Switching Energy vs. Drain Current Figure 14. Turn-On Energy and dV/dt vs. External Gate
Resistance
200 45

175 40

35
150
Power Dissipation (W)

Current Rating ID (A)

30
125
25
100
20
75
15
50 10
25 5

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TCASE (°C) TCASE (°C)

Figure 15. Power De-rating (Note I) Figure 16. Current De-rating (Note I)

1000
RDS (ON)
limited
100
1 µs
10 µs
10 100 µs
ID (A)

DC 1 ms
1
10 ms
TJS (Max) = 175˚C
TC = 25˚C
0.1

0.01
0.1 1 10 100 1000
VDS (V)

Figure 17. Maximum Forward Biased Safe Operating

Area for AOK065V120X2 (Note I)

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 ALPHA & OMEGA
SEMICONDUCTOR
AOK065V120X2

Typical Electrical and Thermal Characteristics (Continued)

10
D = TON/T In descending order
TJ,PK = TC+PDM.ZθJC.RθJC D = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC = 0.8ºC/W
1
Thermal Resistance

0.1
PDM
TOn
Single Pulse
0.01 T

0.001
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width(s)

Figure 18. Normalized Maximum Transient Thermal Impedance for AOK065V120X2 (Note I)

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 ALPHA & OMEGA
SEMICONDUCTOR
AOK065V120X2

Test Circuits and Waveforms

Vgs
Qg

+ 15V
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs
Ig

Charge

Figure 19. Gate Charge Test Circuits and Waveforms

Vds

90%

10%

Vgs td(on) tr td(off) tf

ton toff

Figure 20. Inductive Switching Test Circuit and Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Figure 21. Unclamped Inductive Switching (UIS) Test Circuit and Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - t rr
L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Figure 22. Diode Recovery Test Circuits and Waveforms

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 ALPHA & OMEGA
SEMICONDUCTOR
AOK065V120X2

Package Dimensions, TO-247-3L

RECOMMENDED LAND PATTERN

UNIT: mm

NOTE
1. PAKCAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS.
MOLD FLASH AT THE NON-LEAD SIDES SHOULD BE LESS THAN 6 MILS EACH.
2. CONTROLLING DIMENSION IS MILLIMETER.
CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT.

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 ALPHA & OMEGA
SEMICONDUCTOR
AOK065V120X2

Part Marking

AOK065V120X2
TO-247-3L

K065V120X2

LEGAL DISCLAIMER

Applications or uses as critical components in life support devices or systems are not authorized. AOS does not assume
any liability arising out of such applications or uses of its products. AOS reserves the right to make changes to product
specifications without notice. It is the responsibility of the customer to evaluate suitability of the product for their intended
application. Customer shall comply with applicable legal requirements, including all applicable export control rules,
regulations and limitations.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

LIFE SUPPORT POLICY

ALPHA AND OMEGA SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS.

As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body or (b) support or sustain life, and (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of
the user.
2. A critical component in any component of a life
support, device, or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.

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