APT5015BVR

500V 32A 0.150Ω

POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested D

• Lower Leakage • Popular TO-247 Package

G

S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT5015BVR UNIT

VDSS Drain-Source Voltage 500 Volts
ID Continuous Drain Current @ TC = 25°C 32
Amps
IDM 1
Pulsed Drain Current 128
VGS Gate-Source Voltage Continuous ±30
Volts
VGSM Gate-Source Voltage Transient ±40
Total Power Dissipation @ TC = 25°C 370 Watts
PD
Linear Derating Factor 2.96 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR 1
Avalanche Current (Repetitive and Non-Repetitive) 32 Amps
EAR 1 30
Repetitive Avalanche Energy
mJ
EAS Single Pulse Avalanche Energy 4
1300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 Volts
ID(on) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Amps
32
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) 0.150 Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 4 Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5561 Rev C

APT Website - http://www.advancedpower.com

USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
 DYNAMIC CHARACTERISTICS APT5015BVR

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Ciss Input Capacitance VGS = 0V 4400 5280
Coss Output Capacitance VDS = 25V 600 840 pF
Crss Reverse Transfer Capacitance f = 1 MHz 230 350
Qg Total Gate Charge 3 VGS = 10V 200 300
Qgs Gate-Source Charge VDD = 0.5 VDSS 30 45 nC
Qgd Gate-Drain ("Miller") Charge ID = ID[Cont.] @ 25°C
80 120
td(on) Turn-on Delay Time VGS = 15V 12 25
tr Rise Time VDD = 0.5 VDSS 14 30
ns
td(off) Turn-off Delay Time ID = ID[Cont.] @ 25°C 55 80
tf RG = 1.6Ω
Fall Time 11 20

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

IS Continuous Source Current (Body Diode) 32
Amps
ISM Pulsed Source Current 1 (Body Diode) 128
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 Volts
t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) 510 ns
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs) 10.2 µC

THERMAL CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT

RθJC Junction to Case 0.34
°C/W
RθJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471
temperature. 4 Starting T = +25°C, L = 2.54mH, R = 25Ω, Peak I = 32A
j G L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.4

D=0.5
Z JC, THERMAL IMPEDANCE (°C/W)

0.1 0.2
0.05 0.1

0.05
Note:
0.01 0.02
PDM

t1
0.01
0.005
t2

SINGLE PULSE Duty Factor D = t1/t2

050-5561 Rev C

Peak TJ = PDM x ZθJC + TC

0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
 APT5015BVR
60 60
VGS=6V, 7V, 8V, 10V & 15V VGS=15V 6V

ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

50 50
VGS=7V, 8V & 10V
5.5V 5.5V
40 40

30 30
5V 5V

20 20

4.5V 4.5V
10 10

4V 4V
0 0
0 50 100 150 200 250 0 2 4 6 8 10 12
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

60 1.5
TJ = -55°C NORMALIZED TO
V = 10V @ 0.5 I [Cont.]
TJ = +125°C GS D
ID, DRAIN CURRENT (AMPERES)

50 VDS> ID (ON) x RDS (ON)MAX. 1.4

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

40 1.3

30 1.2
VGS=10V
VGS=20V
20 1.1
TJ = +125°C

10 1.0
TJ = +25°C TJ = -55°C

0 0.9
0 2 4 6 8 0 20 40 60 80
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
35 1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
ID, DRAIN CURRENT (AMPERES)

30 1.10
VOLTAGE (NORMALIZED)

25
1.05
20
1.00
15
0.95
10

0.90
5

0 0.85
50 75 100 125 150 25 -50
-25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

2.5 1.2
I = 0.5 I [Cont.]
D D
V = 10V
VGS(TH), THRESHOLD VOLTAGE

GS
1.1
2.0

1.0
(NORMALIZED)

(NORMALIZED)

1.5

0.9

1.0
0.8

0.5
0.7
050-5561 Rev C

0.0 0.6
-50-25 0 25 50 75 100 125 150 -50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 APT5015BVR
200 20,000
10µS
100 OPERATION HERE
10,000
ID, DRAIN CURRENT (AMPERES)
LIMITED BY RDS (ON)
50 100µS
Ciss

C, CAPACITANCE (pF)
5,000

1mS
10
5 Coss
10mS
1,000

100mS Crss
1 500
TC =+25°C DC
.5 TJ =+150°C
SINGLE PULSE

.1 100
1 5 10 50 100 500 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20 300

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = I [Cont.]
D D

VDS=100V
16 100
VDS=250V
TJ =+150°C TJ =+25°C
50
12
VDS=400V

8 10

5
4

0 1
50 0
100 150 200 250 300 350 0 0.4 0.8 1.2 1.6 2.0
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-247 Package Outline

4.69 (.185)
5.31 (.209) 15.49 (.610)
1.49 (.059) 16.26 (.640)
2.49 (.098)
5.38 (.212)
6.15 (.242) BSC 6.20 (.244)
Drain

20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123)

0.40 (.016) 1.65 (.065)

0.79 (.031) 19.81 (.780) 2.13 (.084)
20.32 (.800)
1.01 (.040) Gate
1.40 (.055)
Drain
Source

2.21 (.087)
2.59 (.102) 5.45 (.215) BSC
2-Plcs.
050-5561 Rev C

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058