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Formula Cheat Sh eet Class 12 Physics

Electric charges & Fields


Potential due to
Coulomb's Law E =

qa
1
r F =

er uniformly charged Sphere Non


Conducting Sphere
STE a Outside =

⑪ N
*
x =

9/4ItEor -
r> R
-x 9/43
for vacuum for medium
on the shell V 1-
=

V=
Electri field Intensity Electric field due to point
charge .
E I
r =
R

4ITEoR
⑪I ⑪ ⑰

⑭ /3 Y
*
9 r
90 E p y= inside y =

e I X
4,
k
=

1 ER UCR 41520 2R3


=F 9 =

source
charge E =

4, 30
To 90= test R Energy stored in a
Capacitor force between plates of Capacitor
charge

I
*
p
W= C
e
F Q Common Potential
QV=
=
=

Electric flux # Gauss's Law


#

a 2 A So y=
↳ for uniform electric field ①= GE dE= Gin .
= Net
charge enclosed
Energy density Energy losS Ataz= AltCae
by the closed surface
6 E E EACOSO
mone xz)
= =
.

SE 24Cz(y
-

u 0
.
=
= ,

↳ for non-uniform # Dipole (P) Y (C # (2)

Ja
,

nE
q I p 1 = 9/2

l
9
- +

I /E d
=

⑭ D ⑪

i
= .

# 2a - current Electricity Current density


a

n
&

↳ for =lectric current instantaneous I =

&
=
a

GE .
closed

d
surface #
dipole placed
↳ TorqueI IXE
=
in U E F
. .

caverage) i = current
·

I
d
= U
#
---

gr

#Electric field due to dipole Net force =0
Resistivity
Su

Drift Velocity Mobility Ohm's law


At axial ↳Work done in rotation of dipole ↳
point /d)

a
~ an M m
=

Ya eET
=

eXt =

Y =

iR R
=

PA
=

- from 0 00 U=PECCOSO, -10s02)


E
=
.
M mL E net

~ On the
23 equitorial line
-E
↳ Electrostatic potential energy

U =
-

5.
Relation blu iC Ye Relation blu J & F EMF of a cell
J +E
=

E= IE
E
1
=

- charge density
RIS
PHYSICS
~At
E linear
x
surface volume =Anee power
Electric
-
Energy E =

1/ F In
any general point E
=
=
r
q q =

=net P Vi 2
iR r
=

1 V W Vit #Terminal Potential diff


K !
BOS
= = =
=
E =
=

vq
- A
infinite M E
# EoF due to E
=
r n
iRt Y = V E- ir
13
Charge I
=
=
=

Due to
sheet of 20 R
charged Conducting Sphere #Principle of Wheat stone
EF due to infinite r
R/E)
#
+
⑧ =

wirele
+
+
+ B E =

naEr- e
- I=
!
I
+
Tr
-------
·
long charged a
s #
Temp Coefficient
.

t
R" tt G
=

R Ro -

> ++ I A # Principle of potentiometer RolT-Tol


E k r= R k =
=

E= E O
Y i
=

UR
=

S
R, B
R2
9

# Principle of Meter
Electric Potential & Capacitance bridge #Combination of identical cells
L, (length of wire) series i = nE
Electric Potential Potential Axial PitEor =

V & ->Y=
R
=

· n-cell
+ ur
4iEt queto "dipole Equatorial -> x
=
0 100-4
i=
Parallel
Electric Potential v = Pcoso
Energy At
any point
-> #
Joule's Law m-cell
mRtr
(For two Chargeit 48r2 H= iRt Joule
92 Capacitance C
=

02
Mixed i =

mnE
0, H =
-
L It Calories
mRt nr
Relation between EC -

series combination Parallel Comb 4 18:

.
E
=
-
Or
d =- /E s , 2
Cp =
2
,
+

Capacitance of Parallel Plate Capacitor spherical Capacitor


Ming
OVl
Charges and Magnetism
filled Partially filled with dielectric 45. ab
=

Air e R
-
I b a
Magnetic Force Y

I get
-

1=80A c
o = -k # if inner grounded
C= 4 En q (TxB)
=

b-a
completely filled Filled with Metal
Isolated Sphere Pitch(P)= 2 My COSO
C
=
C=
Capacitance of ⑰
kE0 E qB ,
= 4io -a
Motion of charge in Uniform B UH
transverseMagneticFitti Mr H
= =

Ganss's law for Magnetism


,

Fin= qVB =
My . =

e No
I 2 Up
=

1 + Xm
q =

all
I 5 15
area
. = 0

⑭ Radius of Circular path ·


Magnetic Force on a current elements

conductor the
r =
=m=I= 1 mR may carrying Magnetic Field at a point due to magnetic dipole
E i(x5) Baxial Beg
= MoM
Meet
=

⑭ Biot Savart's law 4str (r2+1232


e
centre B or
Baxia, 2M

M itsino-rat
or
aB =
=

Mi Mits Beg = At

s

Electromagnetic Induction
M Fat a pointO BENa Nate
.

④Force blu two current Magnetic Flux -onal Emf.


Moll
e ①= B E .

For rod ing


Bod Rotall For Disc
carrying parallel straight coil carrying .

BACOSO
P= X X X X X
Conductor w
w

F
e
# Ampere's Circuital law mete X

x
X

X

X

X
v
X

X X
xxe
=

M2 2h

&5 d
Induced emf
3 Busino
X X x x X

a
=

Moi 3=

J n
de
. = -
2

121 Buh 151

l
= e
But
=

i
or
191= BUI 2
L Si

n
# Magnetic Field due to an
infinitely long straight wire of A C Generator
.

radius a! : at a F Bi P=
Carrying Current point
Be & E. sincut 3.= NBAW
= =
.
-

gr
R
Su

Moi Inductance EMF induced in the coil =-Ldi


B =

M ra B a B=

r>A
=Mo
,
C
CITA2
,
r coefficient of self induction
It

Torqueon
placed
field
in a
a Current Carrying (oil
uniform
magnetic
Moving
I <O
Coil Galvanometer
Or I GO
=

14a
Mutual Inductance
=
-
dildt
=
self inductance

MoUUAl =
of
MoMrNA
a
long solenoid
L
.

=NIABsinc coefficient of
M
=

N2P2
-

Ez -

1 M

PHYSICS
where k
= =

Or = MBSiO G R =
=

galvanometer =

NAB Constant ·
I
,
didt didt coupling 12 22
,

⑪Galvanometer Conversion > into voltmeter Mutual inductance of two long solenoids For
perfectcontina
.

into Ammeter M =

MoMrN, NzAl
MoMrKr,z) =

i Combination of inductors -
Magnell Energy
se - Series (g 4, the+1s
=

In inductor U =

1 Li2
Parallel (p=1 12 M2 -

sensitivity , -

2M In Solenoid
4 + 12 UB=
In BAL
+

⑪ Current Sensitivity *
VoltageSensitivity if coils are far away
Ig =
NAB P
1
= =
=

E iR AA then M=0 ,
SO
Magnetic energy density Mi=
EBs
+12 0 (p= 112 Mi =
12
Magnetic field due to a Current
Carrying Solenoid .

↳, + 12 2 Mo

B =

Moni=(oNil/l h =

Mc · Induced Electric Field induced charge flow


$9= 1Dt= -NAD
& Matter GE .

=-d=-AdB O

Magnetism E
# Bar Magnet as an Equivalent Solenoid .

B = M. 2m where m
=

magnetic moment Alternating current


of solenoid M =

n (21) i lita? R M S value of Current &


4/23 Alternating Current
.

. .


voltage
i I sincut
=

"msI Yoms
=

Potential energy of curie's law


Alternating Voltage
Y
Magnetic dipole -> Fordia Xm47 x =

V sincet irms= 0 707 % Yoms=0 707No


. .

U= -

MBCOSO ->
For Paramagnetic
⑰ B Reactance Mean value of Current & Voltage
u
xmCI
=
- -

iay= 2%
X= YwC
X- (w
=

Yay =
0 637 No
.

I Xm=
=A # ->
For Ferromagnetic ⑧

1
I
0 637 % 0 637 No
Yay
=
. :

al
u =

Mo(1 Xm) + xm !
+ To
Series (CR Circuit I is same for R , RAY OPTICS
C
R L U=1
18 C ·
Mirror formula Refractive index
X A Sinc
V
-

if VY, then =
i *
X I 4 ↓u
·
=

Y-V U
Sin
=

In
+

-
c

"I
-


Ye "I for Mirror Forcens For Prism
I =

I sinct-b + =
magnificall-on -
then
2
2
2 E, sincut
=

=
1R+ (X: Xc)2 -
tang=
xxs ,
For mirror
m
=

I I
= u=
SA e

thin lens formula Prism of small angle


m=I= -1
.

Power in ac Circuit Resonant series LCR Circuit A


=

S (l-1) A
=

or
Pax =
Erms IrmsCOS4 XXc
I
=

MAX
then
·
Muns
z= R
Cens Maker's Formula I Ii
Par = E. .COSd (M-
#

Refraction at spherical surfaces


2 Resonant frequency = 11(z) -

*
=

u
Real & apparent depth
power factor Wr 1 =

-Factor M =
depth
real

ITC #Power of Lens combination of Lenses


apparentdepth
cosb =

R/2

a
I
J n
=
q P= P if d =
0

l
PetItem, P2-dP, P2 P

i
,
P+ Pz
Transfor mer
=

ratio ,
#
Step-up Transformer
#

n
Position No of:

Simple Microscope 360


Reflecting n =

e I of Object images
E Ip =As
=
I Final image at
Es Ep , s IpGNs Np M=1t, Te l e s c o p e .

gr =to 12 evenanywheree
M
Su

D/A "at 0
step down Transformer
"
M =

power = Es Is
y= output
a
Power Esp , Is Ip & Ng <Np Compound Microscope asymmetric n
input EpIp
M= MoX Me
Astronomical TelescopeTerrestrial
Telescope
Alternating to in = at
Voltage Applied -I +
e) image nite) image M=
Resistor only capacitor Inductor only It
PHYSICS
M=
E.sinct
E Esinct E Esincot 2
- imageat
= =

M=-t imageatd=fot
4f+f e
I =

Isinct I=

Isin(wt+y) I=
Isin(t- 2) /

EM Waves WAVE OPTICS

Displacement Current Maxwell's equations

Ig =
2, dDE
#

Gauss's Law For electrostatics herenceof light 1, Iz 2 II, Ee Co e


It ⑧E . d5 = 9
o
#Imax (I +Ez) # Imin= (I, -Ez
,
E M Waves
.
# Gauss's law for Magnetism
55 d at P =

0 St, 415, at = it, 355, 54 ----


E
=

E.sin(kx-cut) ⑧ .
=

0 ; ---

B BosinCkntcut) law of EMI For I Iz= If YDSE


#Faraday's
=

,
FeM wave
propagating &E dt= 4 I. COS / YnB=n B =

(2nx x
=

along the direction .


. -

de IR
Ems O #Maxwell-Ampere's Circuital Law
C= E,
W I alPD=nx Bright
=

c= =

Bris Bo
-

d
2
e.e
05 . =

Mo/I ,E] +2

Er=cBo # Intensity(I) I =
Energy
Er
#

Diffraction due to a single slit


= I nx Time *E ~ condition for t
↓ #

momentum (P)
secondary maximum #Freshel distance
2
oo Radiation Pressure P D=.
asinOn= (2n+1 n
=
1 2
, ,
3, ----
2
=
c
=

3x108m/ s e N e ro m u s c e n e rg e t u s e re r a w e a b s o r b
i nsta
condition for th
secondary minime

er a c I
4I

B
.

=
=

asiOn= nx
* idth
n =
1 , 2, 3 ,

of central Maximum
-----

xD =

Cx
Energy density
#Angular fringewidth #Angular fringe width of secondary

U E Vi =

1 (UEaEE (UlaBo -

Mo
of central maxima=
2
Maxima or
minima: I
Dual Nature of Radiation and Matter Nuclei
#Work function W =

ho=h2
Xo ⑲Nuclear Radius · Nuclear density
# Kmax=eYo= mymax
R Ro Al3 = mass of nucleus
=

Kmax=h5-Po [Einstein's Equation]


-

#
volume of nucleus
of Photon E Gr
=

1
=

#Energy
⑪ Mass -
defect
#Momentum =P E hr
=I
=

[2mp+(A-2m-ma
=

C xm=
E
moving mass of photon m
=
=

E
#

i ·
Binding Energy
#number of photons emitted per second of 2

~ from a lamp
frequency B E
.
=

AMC

1 1x egype]
(Bind on
= =
=

b BE=
=

n
no hc x
·
BE/A

a
#de-Broglie wavelength molecule

l J n
for gas semiconductor Devices

i
1 =
Kinetic Boltzman .

constant
oranee
k=

n
energy total current the
·
through pure
8X
h/15mKT
=

k qX
=

semiconductor

gr
Liqu
Su

I= Let In
ATO M S
# No of .

alpha particles
scattered per unit area
* Potential
energy of the 0
·
a
Electrical conductivity in semiconductor
N(0) < 1 1 =- 27 222
n
2
.
el ~
=

e(neMe+ n , Me)

PHYSICS mobility
sin"(0/2)
⑪ To t a l of et
#
Impact Parameter Energy u = .

b = z ecot(0/2)
En-13 6Zell .

kn-- En
4 E. K 2
U =

2Er = -

2kn
~
2
=

eNalle up= eNat


k kinetic energy
=

z= atomic Number .
⑭Frequency of electron in the nt

62x1022
#Distance of Closest approach On =

(g) eretm= 6 .

n3
= 2ze

48 K
,
Wavelengthof radiation in the
transition from he - n ,
# BOHR'S MODEL
R
Angular momentum of e8 Rydberant
=


R2Y )
= -

= or
I RH 097X10m
.

mir- e
~Number of spectral lines due to

transition of etfrom nt orbit to


~
Frequency of radiation
0 =

Ec-E , lower Orbit is .

h N =
n(n-1)
formulae 2
⑪ Bohr's

Radius of nth Orbit #Ionization energy -> 13 6 ex


.

" -
Un = 4xEon2 =

0 33n A
.

4 mZe2 2 # Ionization ~ 13 6. Z V
O n2

velocity of
Yn
=

1
2xze =
2 . 2x108Z
4 nh n

⑪ Kinetic
energy
13 622 eV
kn
=

n2

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