Semiconductors and logic Gates

RedZone !
#
Day 4k
 >
Monday Friday
-

>
Saturday (1×5)

Hori ded on
-14
 Valium tubes and semi conductor devices
Topic
-

Vaccumtubes Semiconductor devices

I Direct
of
"
Directhof current current

↓ ↓
Unidirectn Bidirectn

Operate invaccum No
rigid
vaccum .
requirement of
µ power consumption
→
High Powerconsumpth -

low

Output how
Highly efficient
:

low
Efficiency
 Conductors Semi conductors and Insulators
Topic
-
:
: .

Conductors semi conductors

-
Insulators
f ↓

Resistivity I Po<P< Pi Resistivity ↑

conductivity ↑ Oc > 0 > Oi Conductivity ↓ .

↓
allows the -440W itpnestrictsthe
it's behaviour
flow of
depends on the currents .

one
using
it .
 :| :| : ÷÷::÷
Conductors semi conductors -
Insulators

^
'
^ iii. ii. ÷ .

:-.
" ' -

LEG
.

3ev.EE
.

i.EE
:É
i.
.

>
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.

: .

;¥
:-.
,
.
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"
¥
. .

÷ :i÷÷÷ :÷÷:÷
Energy gap -0 Egs3eV Eg > 3eV
off
c④
•
Even at the -11200mi
v④ C④ many
e- will
gain every
Egtomakethe ④ difficult
jump .

Valence Band electrons

# Jump
-

these electrons
will lead to conductivity conduct Band
 '
i
'
-

:
-

conduct" Band
i
,

"
' ,
" -
"

lowest E level of CB
\ '
-
,

II. Egap
.

E level
Highest
.

of V13
"

"
" ^
I '

valence Band
,

'

i.e-
,
-
-

.
i ,

\ '
I ' '
- -
-
_
Topic : Intrinsic semiconductors and Doping :

mmmm

low ☒nductivity (9-14)

lnterpnsic Adding ofimpllrities>
.
Extrinsic

Pure semiconductor added

◦ •

Impurity
of G- 14 →
Valency :4
g- 15 by -13
L S

lol
' '
d-
P
Type Type
•
N
-
• -
-

- -

Break
I / / Room -1
L j
- • -
• - •
MY -

↳
very few Bonds
÷
Break

.ir#i-mBondBreakageduetothermalabberatnvacany-4 µ Bond
? free e-
(-1--014) bonds are broken
• → no
.

Break ↳ 2h01am
→
nofreee
-

likeancnsulator electron vacencylt)

→
Behaving
.
Intrinsic semi conductor -

where
☆
Conductivity Only: due to thermalabb→tn
Rate Ps low
very
.

☆ G- 14 ( Elements)
☆ N electrons = N holes ( electrically neutral )
 of G- 14 lnterinsicsémiconductor
Atoms : semiconductor Atom -19-14)

conditnofdopingmladditnot impurities)¥ comparable size .

Atoms added asanimpurityto Intrinsic

:
Dopant Atoms
semiconductor

q-iyqs.fi?9catenath:no1-
an

G- 13 appropriate
choice
(Boron) B C N C
Nitrogen,
At SP P
CAluminium Phosphorus)
C

Ga Ge As
(Gallium ) CArsenPg

)
In Sn Sb
( Indium) (
Antimony ] .

Tl .

Pb Bi
✓

more
commonly used
-
 Extrinsic

added
•

Impurity
G- 15 , s G- 13

Njtype P-type
j

G!→4e covalent 3. e- 3. vcovatent

-

→
G- 13 -
> →
Bond Bonds .

↳ 5ᵗʰeron (
mmmm
no stable e-
configutn

( Moving * settee needsonemoreein

fstealitfroma neighbouring
"

charge
-

G- 14 element
.

-10
-

dopant atom v

↳ Holelcreated)
Dopantatom -0
 ↓ ↓
Completely neutral
.

Interns ,oc Extrinsic

lol
' '
-
•
d- -
• -

Break
I / /
- • -
• - •
# •
-

Ge vG
-

! & -
-

¥;
• -

N -

Type P-type

-
'
• _
! _
! _
! - -
! -1 -1 . . _
d-
1 I ⊕ I 1 I ☆⊖ I
-0¥:* ④
- •
• -
-
- •
_ •
--- #

1- ! -

;
-
1
¥;
1
-
Henri
÷ :*
5. Metatron
↓
set free Hotels create
↓ ↓

heading to more conductivity . head to more

conductivity
 Extrinsic

added
•

Impurity
G- 15 , s G- 13

e!nsH f É
"
¥" "
""

ne=Nn←G → me __
Nh

DA⊕ DA -0
←
Dopant →
atom

✓ u

%"" Mn >> Me
Electrical neutrality
.

Psmaintained
Topic : Donor and Acceptor Energy level :
☐ Absent in Intrinsic

9%-15)
( Beta-13)

n-type p-type
Topic Making of
: a Diode : PN

Diode (Representation) : -1:¥µ

p side
-
.
n -
side .

Step :1 Diffusion
:
Duetoconcentratn gradient
I
p side n side
⑨ n→p
-
-

•
0 •
] -

⑨ p→n
-

i.
-

◦
.
.

h→
-

, • -
.

I ↓
°
-
◦
.
-
÷
_

Diffusion current
cdevoidofe-1 Cfullote-1 Current :
Cfullofholes) ( devoid
of holes )
→
Idiffusion
lp→n)
 EB and Drift current
step -11 iformatnof
⇐ EB ← EB
•
. •
88 -
-
-
-

°
- -

+
-

Et
_

00
- . _
.
- -
"
. ,

00
◦

i-←¥t.no/e-si
• -
-
• -
•
_

00
-

00
FEE electrons
, • -
. °

- .
◦

cdev◦id◦fn◦
◦
,
00 -
-
÷
.
-

00 -←•t
•
_ . °
-
• -

p side side
← p side
n
side
-

n
-

-
.

(devoid of e- ) (full e- ) ←
of
cfuay.no ,e, [
drift .

simmovable Dopant atoms

☒
epletnreg.hn/sdevoidof- majority CC
Atoms G) towards then side
Dopant
-
-
-

Atoms H towards the side

Dopant p
-
-
1. Diffusion
e-
ln→p) Idift ( p→n )
hlp→n )

CDere
mmmm

Initially ; itis very

↓ large
.

Depetn Region

¥i" {
Idittusiond .

treating the Idiffusion

promoting / n→p)
(p→ng)→IdrPtt(n→p
d holes
'

the
drift current electron
.
 N
p-Type Type
-

minority
minority ↓
I cc
cc

④④ ④④
↓ ↓
majority cc
majority cc
step -111 ; Diffusion and Drift Current Equalizes
-

Initially :
Idiff -
maximum

Idrift __ •

He
Éi} develops

Idrift ↑ Iditfusiont .

Idrift =

Idiffusion→ diode is
Cn→p) ( p ng
ready
.

-
Topic Biasing inadiode ;
:

www.n-pp/PngVacrosstheendsotfthedPode .

Forward <
,
Reverse

> >

¥§i÷←→¥
.
¥ : .
-

§ -

-
+

+ -
→

.
- 6

•
h→ I
-
-

_q•E
-
-
-
+
.
•

- -
t +
° _
"
° °
.
t

.sideÉ÷É÷
-
-
• .
,
.

E-
.

.
• - .

:
'

p side -

n -

side .

p
4- /

EB EB
--→Iforward ←
Inverse
Etsattery
"" 41
Vhigher :P
a

Hower :P
Hower :N
Vhigher :N
-
☆ Forward
Biasing :

Hower -
N

>
e-
ummmm
ltowars the )
DR

É i. §
-

'

_
-

t - -

→
widtnot DRI
I •

Vhigher P
-
- -
_
. .

:
.
o -

f -
o

holes ( towards the DP

)
n
. -

P side
-

n -

side . MMM
←
EB
.

Etsattery forward Biased current 1mA)

1,1 ,
I
majority cc
☆ Reverse
Biasing :

Vhigher N -

e- (
away from DR)
>

i :-. Mmm

¥0s \
-

+
→
-
i -
_ _

of DR↑
•

- -
+
t
.
-

.
width
° -
. -

t -
o
.

.
. -
.
Vlower -
P /
p side -

n side
holes ( away
-

from DRI
.

EB Mmmmm

Reverse Biased Currently A)

Hid ↓

minority CC
☆ v. [ Characteristics Diode :
of a
vf↑(If↑ ) very slowly
^
# 1mA) ↳
Ataspeciticvf ; # ↑ rapidly

Breakdown .

v.
< • . it

°?(
Threshold / Cut -
in
voltage
0.2W -

Germanium
° '7V -

Silicon

,, , ya,

Vr↑ (Ir) small

very
Ata specific value
of VR ;(IR↑ / Rapidly
 Reverse
Biasing
A
Vpsreakdown

c. diode
Highly doped
PN diode Lightly doped PN -
-

I 1
Zener Breakdown Avalanche BD
I ↓
Pehlehotahai Baadmeinhotahai
 Diode
Topic Applications of
: a :

Diode / LED) :
→
Heavily doped diode
1-
light-Emitting → ñsendiñrnemrtenntrnisand
burglar alarm systems

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:÷ :
-

'

I II
{
'
•
-

v7 some of
_
_

. .

④
-

- -
+ _

:
.
.

÷ Electrical Alright
.
•

p side n side
Energy
-

Energy
.

µ
Forward ↓
Intensity Biasing .

Visible
'ma'
^
photons

I , -4
o
.
2. Solar Cell : onthisdiode
All 'the photons falling
depletes Region

µ {
can reach the .

p
-
semi ( thin)
g-
✓

a •
→ n -

semi (thick)

Photons / DR)
EB I
←

T.IE#-..-Generatee--no1epatrs9ntneDR
- i
•
°
-
t -
↓
generated
.

these e-
n side
F- side
and holes Willmore
-
.

-
Igenerated
Undertheactnof
ER
.
E' barrier
Bulb
 Photodiode
pepletn Region /Photons)
3. :

1 www.dighl-E
↓

_
-

+
=
_
°
-

_
⑤ ④
M
-
• .

1-

~
.
-

- -
+ _

° .
. -
f -
o
✓

towards
.

÷
towards p
n
• -

Inside
-

p side -

. N
→
I
i*i
Ipreversed
h◦wReverseB◦ng
( Electrical E) -

•
photocurrent ✗
Intensity
• Used as
photodetector to detect optic signals
 Diode in circuit :
Topic : a

f-
forward Biasing Reverse Biasing
↓ ↓
Behave as Behave as
a wire a broken
wire

☆ Zener Diode : Acts as a

potential regulator
-
Question : What is Idiode ?

P N
F④
Ion

nmn-P.gr
-

DV=5V

ESV R= / OR

Grounding :0V -5A

-1--5%2=0
.
Question :

¥21^15 → Is
✓
^

15 V

O Id
✓

Id = I - I
,
Topic Rectifiers
:
:

A.
Half -
Wave Rectifier
FB ; FB
II. At •

{{
☐ "◦ de ✗ ✗
-

& gg
Alternating
Input 00

/ % Variable output
•

voltage DC
.

rPnput
2.
output
loop
.
n✓•
loop
.

Mood -8
It

✓
 Input AC

④
[
→
half cycle
.

half cycle
↓ ↓
Diode CFB) Diode IRB)
↓ ↓
Itconductors It does not allow Itobe '

Conductor
Vi
V0
→→ Vino →→
↳ >
Ti=T◦
:

✓
✓

0 :-b 0 : -1
B. Full Wave
-

Rectifier
FBXX
¥ FTFB •

÷÷÷÷÷÷÷÷§g§g&
Diode -1
I

§
Diode -11
Alternating
Input
Potential
¥t •
Variable DC output
.

to FBFB

Von
mm >t
 Input AC

④
[
→
half cycle
.

half cycle
↓ ↓
Diode -1 ✓ Diode -111213)
Diode -2 / RB) Diode -2 ✓
↓ ↓
output / Output ✓
^

"
=¥
a

€÷÷ n$A•n ,

v7 00--201 ¥2
Question :

5
-

✓ RB
+5
FB ✓
-5
RB
0

V0 = 5 ✓

¢
-

Vo = 0 - - V0 =
0