PROBLEMS INVOLVING MORE THAN TWO INDEPENDENT VARIABLES

PROBLEMS INVOLVING MORE THAN TWO INDEPENDENT VARIABLES

A) Gaseous
1-DIMENSIONAL species APROBLEMS
TRANSIENT
Liquid solution A+B
A) 1-DIMENSIONAL TRANSIENT PROBLEMS

ABSORPTION OF A GAS SPECIES INTO A STAGNANT LIQUID SOLUTION

ABSORPTION OF A GAS SPECIES INTO A STAGNANT LIQUID SOLUTION

This problem was solved for steady-state case.
Gaseous species A
This problem was solved
Liquid for steady-state
solution A+B case.

PROBLEMS INVOLVING MORE THAN ONE INDEPENDENT VARIABLE

1-D TRANSIENT PROBLEMS

ABSORPTION OF A GASEOUS SPECIES INTO A LIQUID SOLUTION

was solved for steady state case

1-D Conduction
gaseous species A Heat transfer in a fin

liquid solution A+B

 without chemical reaction

gaseous A
membrane
membrane removed suddenly

solution concentration profiles

time

Heat transfer Fluid mechanics

Temperature Velocity profiles

profiles
a) In the similarity method, based on the similarity of the profiles (u, T or C distributions) at
different moments, a variable transformation is made to overlap these profiles. An ordinary
differential equation is thus obtained and integrated to obtain the exact solution.

boundary conditions:

Integrating once more...

and applying the boundary
conditions...

Error function

Complementary
Error function
 b) Laplace transformation method relies on transforming a function of real variable
(usually t in the time domain) to a function of a complex variable s (in the complex
frequency domain, also known as s-domain).

Applying the transform to the diff eq.n:

Boundary conditions:

Solution:

Inverse transformation gives:

c) Approximate solution with boundary layer assumption

exact solution
increasing
increasing
time
time

approximate
solution
exact
exact solution
solution
increasing
increasing time time

approximate
solution
 z-coordinate nondimensionalized with the
time dependent boundary layer thickness
nondimensional
concentration

original diff. eq.n

was:

substituting into the diff. eq.

Integration of

requires to be known. A profile satisfying all boundary condirtions that can be

written for the current problem may be assumed.
 All boundary conditions:

Third degree polynomial which has 4 constants unknown is suitable.

Evaluating the derivatives and substituting into Eq. (A) gives:

Initial condition

Approximate solution is obtained as:

exact solution was

series expansion
Incropera App. B2
 1-Dim. Transient Mass Diffusion
without Volumetric Generation (i.e. Homogenous Reaction)
Evaporation and diffusion of species A from a tube partially filled with liquid A
into a binary gaseous mixture of A+B

STEADY-STATE SOLUTION HAS ALREADY BEEN OBTAINED:

 1-Dim. Transient Mass Diffusion
without Volumetric Generation (i.e. Homogenous Reaction)
Evaporation and diffusion of species A from a tube partially filled with liquid A
STEADY-STATE SOLUTION: yA ≡ xA
with

since
 TRANSIENT MASS TRANSFER THROUGH A STAGNANT GAS LAYER

was solved for steady state case

EXACT SOLUTION

constant

constant

at the interface
substituting into Eq. (2)

now substitute into Eq. (1)

initial and boundary conditions

nondimensionalize with the similarity parameters, i.e.

boundary conditions

solution yields:
APPROXIMATE SOLUTION WITH BOUNDARY LAYER ASSUMPTION

Boundary layer thickness changes with time.

 Boundary conditions

nondimensionalize with

then integration yields

in order to complete the integration a profile for shall be estimated. Choosing

and substituting the B.C.s

now substitute into Eq. (4)

and integrate
Boundary layer thickness as
a function of time.
 1-Dim. Transient Mass Diffusion
without Volumetric Generation (i.e. Homogenous Reaction)
Evaporation and diffusion of species A from a tube partially filled with liquid A
APPROXIMATE SOLUTION WITH PSEUDO-STEADY-STATE ASSUMPTION:

In many mass transfer operations, one of the

boundaries may move with time. If the length
of the diffusion path changes a small amount
over a long period of time, a pseudo-steady-
state diffusion model may be used.
Steady-state solution was obtained as:

Recall that the liquid level z1 decreases with

time. In order to emphasize the time
dependence of z1 , let’s denote it as z(t) .
 1-Dim. Transient Mass Diffusion
without Volumetric Generation (i.e. Homogenous Reaction)
Evaporation and diffusion of species A from a tube partially filled with liquid A
APPROXIMATE SOLUTION WITH PSEUDO-STEADY-STATE ASSUMPTION:
Steady-state solution was obtained as:

(5)

If the length of the diffusion path at time t is

given by, Z = z2 –z(t) , an unsteady-state
material balance on liquid A (i.e.,In–
Out=Accumulation) yields:

Recognizing that dz/dt = - dZ/dt,

(6)
 1-Dim. Transient Mass Diffusion
without Volumetric Generation (i.e. Homogenous Reaction)
Evaporation and diffusion of species A from a tube partially filled with liquid A
APPROXIMATE SOLUTION WITH PSEUDO-STEADY-STATE ASSUMPTION:
Combining the equations (5) and (6),

(5)

(6)

gives,
(7)

Rearranging equation (7), one may write,

(8)
 1-Dim. Transient Mass Diffusion
without Volumetric Generation (i.e. Homogenous Reaction)
Evaporation and diffusion of species A from a tube partially filled with liquid A
APPROXIMATE SOLUTION WITH PSEUDO-STEADY-STATE ASSUMPTION:

Integrating equation (8)

(8)

yields,

(9)

Therefore, for the pseudo-steady-state

diffusion process, a plot of vs. time t
should be linear, with slope given by
ARNOLD DIFFUSION CELL
for measurement of DAB
1-Dim. Transient Mass Diffusion without Volumetric Generation
The formation of a silicon oxide SiO2 thin film on a silicon (Si) wafer surface
APPROXIMATE SOLUTION WITH PSEUDO-STEADY-STATE ASSUMPTION:

The density of solid SiO2 (rB) is 2.27 g/cm3, and

the molecular weight of SiO2 (MB) is 60 g/mole.
The molecular diffusion coefficient of O2 in SiO2
(DAB) is 2.7 x 10-9 cm2/s at 1000 °C , and the
maximum solubility of O2 in SiO2 (cAs) is
9.6 x 10-8 gmole O2/cm3-solid, at 1000 C and 1.0
atm O2 partial pressure.
1-Dim. Transient Mass Diffusion without Volumetric Generation
The formation of a silicon oxide SiO2 thin film on a silicon (Si) wafer surface
APPROXIMATE SOLUTION WITH PSEUDO-STEADY-STATE ASSUMPTION:
1-Dim. Transient Mass Diffusion without Volumetric Generation
The formation of a silicon oxide SiO2 thin film on a silicon (Si) wafer surface
APPROXIMATE SOLUTION WITH PSEUDO-STEADY-STATE ASSUMPTION:
1-Dim. Transient Mass Diffusion without Volumetric Generation
The formation of a silicon oxide SiO2 thin film on a silicon (Si) wafer surface
APPROXIMATE SOLUTION WITH PSEUDO-STEADY-STATE ASSUMPTION:
1-Dim. Transient Mass Diffusion without Volumetric Generation
The formation of a silicon oxide SiO2 thin film on a silicon (Si) wafer surface
APPROXIMATE SOLUTION WITH PSEUDO-STEADY-STATE ASSUMPTION:

This example illustrates how a chemical

reaction at a boundary surface can serve as
the driving force for molecular diffusion.