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High-Current, High-Performance
DrMOS Power Module
VIN
VCC BOOT
HS CBOOT CIN
THWN Driver
Driver PHASE
PWM Logic
DISB# L1 VOUT
Controller and VSWH
Delay
SMOD#
LS
Driver COUT
PWM
GL
AGND
VCC PVCC PGND
CVCC
5V CPVCC PGND
Ordering Information
Part Number Ambient Temperature Range Package Environmental
AOZ5311NQI -40°C to 125°C QFN5x5-31L RoHS
AOS Green Products use reduced levels of Halogens, and are also RoHS compliant.
Please visit www.aosmd.com/media/AOSGreenPolicy.pdf for additional information.
Pin Configuration
VSWH
VSWH
THWN
VSWH
DISB#
PGND
PVCC
GL
31 30 29 28 27 26 25 24
PWM 1 GL 23 VSWH
SMOD# 2 22 VSWH
PGND
VCC 3 21 VSWH
AGND 4 20 VSWH
BOOT 5 19 VSWH
NC 6 PGND 18 VSWH
VIN 8 16 VSWH
9 10 11 12 13 14 15
VIN
VIN
PGND
VIN
PGND
PGND
PGND
QFN5x5-31L
(Top View)
Pin Description
Pin Number Pin Name Pin Function
PWM input signal from the controller IC. When DISB#=0V, the internal resistor divider will be
1 PWM
disconnected and this pin will be at high impedance.
Pull low to enable Discontinuous Mode of Operation (DCM), Diode Emulation or Skip Mode.
2 SMOD#
There is an internal pull-down resistor to AGND.
5V Bias for Internal Logic Blocks. Ensure to position a 1µF MLCC directly between VCC and
3 VCC
AGND (Pin 4).
4 AGND Signal Ground.
High-Side MOSFET Gate Driver supply rail. Connect a 100nF ceramic capacitor between
5 BOOT
BOOT and the PHASE (Pin 7).
6 NC Internally connected to VIN paddle. It can be left floating (no connect) or tied to VIN.
7 PHASE This pin is dedicated for bootstrap capacitor AC return path connection from BOOT (Pin 5).
8, 9, 10, 11 VIN Power stage High Voltage Input (Drain connection of High-Side MOSFET).
12, 13, 14, 15 PGND Power Ground pin for power stage (Source connection of Low-Side MOSFET).
16,17,18,19, Switching node connected to the Source of High-Side MOSFET and the Drain of Low-Side
20,21,22, 23, VSWH MOSFET. These pins are used for Zero Cross Detection and Anti-Overlap Control as well as
24, 25, 26 main inductor terminal.
27 GL Low-Side MOSFET Gate connection. This is for test purposes only.
Power Ground pin for High-Side and Low-Side MOSFET Gate Drivers. Ensure to connect 1µF
28 PGND
directly between PGND and PVCC (Pin 29).
5V power rail for High-Side and Low-Side MOSFET gate drivers. Ensure to position a 1µF
29 PVCC
MLCC directly between PVCC to PGND (Pin 28).
Thermal warning indicator. This is an open−drain output. When the temperature at the driver
30 THWN
IC die reaches the Over Temperature Threshold, this pin is pulled low.
Output disable pin. When this pin is pulled to a logic low level, the IC is disabled. There is an
31 DISB#
internal pull−down resistor to AGND.
LS Control Logic
ZCD
VCC
ZCD Detect
PWM
LS Gate
Tri-State PVCC
PWM
PWM Tri-State LS
Logic Gate
Driver GL
Thermal
Monitor PGND
THWN AGND
Low Voltage Supply (VCC, PVCC) -0.3V to 7V High Voltage Supply (VIN) 2.5V to 20V
High Voltage Supply (VIN) -0.3V to 25V Low Voltage/ MOSFET Driver 4.5V to 5.5V
Supply (VCC, PVCC)
Control Inputs -0.3V to (VCC+0.3V)
(PWM, SMOD#, DISB#) Control Inputs 0V to VCC
(PWM, SMOD#, DISB#)
Output (THWN) -0.3V to (VCC+0.3V)
Output (THWN) 0V to VCC
Bootstrap Voltage DC -0.3V to 28V
(BOOT-PGND) Operating Frequency 200kHz to 2MHz
(1)
Bootstrap Voltage Transient -8V to 30V
(BOOT-PGND)
Bootstrap Voltage DC -0.3V to 7V
(BOOT-PHASE/VSWH)
BOOT Voltage Transient(1) -0.3V to 9V
(BOOT-PHASE/VSWH)
Switch Node Voltage DC -0.3V to 25V
(PHASE/VSWH)
Switch Node Voltage Transient(1) -8V to 33V
(PHASE/VSWH)
Low-Side Gate Voltage DC (GL) (PGND-0.3V) to
(PVCC+0.3V)
Low-Side Gate Voltage (PGND-2.5V) to
Transient(2) (GL) (PVCC+0.3V)
VSWH Current DC 50A
VSWH Current 10ms Pulse 80A
VSWH Current 10us Pulse 120A
Storage Temperature (TS) -65°C to +150°C
Max Junction Temperature (TJ) 150°C
(3)
ESD Rating 2kV
Notes:
1. Peak voltages can be applied for 10ns per switching cycle.
2. Peak voltages can be applied for 20ns per switching cycle.
3. Devices are inherently ESD sensitive, handling precautions are
required. Human body model rating: 1.5k in series with 100pF.
Electrical Characteristics(4)
TA = 25°C to 125°C. Typical values reflect 25°C ambient temperature; VIN = 12V, VCC= PVCC= DISB# = 5V, unless otherwise
specified.
Electrical Characteristics(4)
TA = 25°C to 125°C. Typical values reflect 25°C ambient temperature; VIN = 12V, VCC= PVCC= DISB# = 5V, unless otherwise spec-
ified.
Notes:
4. All voltages are specified with respect to the corresponding AGND pin.
5. Characterization value. Not tested in production.
6. GH is the internal pin.
Timing Diagram
VPWMH
PWM
VPWML
tPDLL
tPDHL
GL
1V 1V
tPDLU
90%
VSWH tPDHU
1V 1V
PWM VTRI
GL
VSWH
H L H to Tri-State L H, Forward IL
L, Reverse IL
H L L to Tri-State L L
H L L L H
H H H H L
H H L L H
H H Tri-state L L
Note:
7. Diode emulation mode is activated when SMOD# is LOW and PWM transition from HIGH to Tri-State.Zero Cross Detection (ZCD) at IL*Rdson(LS) =
0.5mV to turn off GL.
94 8.0
7.0
92
6.0
90
5.0
88 500kHz
4.0
86
3.0
84 300kHz
500kHz 2.0
82
1.0
80 0
5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40
Figure 3. Efficiency vs. Load Current Figure 4. Power Loss vs. Load Current
600 4.0
580 3.5
560 3.0
PVCC Current (uA)
540 2.5
520 2.0
Tri-state Window
500 1.5
480 1.0
Logic Low Threshold
460 0.5
440 0.0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature (°C) Temperature (°C)
Figure 5. Supply Current (IPVCC) vs. Temperature Figure 6. PWM Threshold vs. Temperature
1.8 3.7
1.7 3.6
Rising Threshold
1.6 3.5
SMOD# Voltage (V)
1.5 3.4
1.4 3.3
1.3 3.2
Logic Low Threshold
1.2 3.1
Falling Threshold
1.1 3.0
1.0 2.9
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature (°C) Temperature (°C)
Figure 7. SMOD# Threshold vs. Temperature Figure 8. UVLO (VCC) Threshold vs. Temperature
Rev. 1.0 May 2019 www.aosmd.com Page 10 of 17
1.8 4.0
1.7 3.5
1.6 3.0
DISB# Voltage (V)
1.4 2.0 ‐
Tri state Window
1.1 0.5
1.0 0
-50 -25 0 25 50 75 100 125 150 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8
Temperature (°C) VCC Voltage (V)
Figure 9. DISB# Thereshold vs. Temperature Figure 10. PWM Threshold vs. VCC Voltage
Figure 11. High-Side MOSFET SOA Figure 12. Low-Side MOSFET SOA
Application Information should monitor the current output and protect the load under
all possible operating and transient conditions.
AOZ5311NQI is a fully integrated power module
designed to work over an input voltage range of 2.5V to Disable (DISB#) Function
20V with a separate 5V supply for gate drive and internal
control circuitry. The MOSFETs are individually The AOZ5311NQI can be enabled and disabled through
optimized for efficient operation on both High-Side and DISB# (Pin 31). The driver output is disabled when
Low-Side for a low duty cycle synchronous buck DISB# input is connected to AGND. The module would
converter. High current MOSFET Gate Drivers are be in standby mode with low quiescent current of less
integrated in the package to minimize parasitic loop than 1A. The module will be active when DISB# is
inductance for optimum switching efficiency. connected to VCC Supply. The driver output will follow
PWM input signal. A weak pull-down resistor is
Powering the Module and the Gate Drives connected between DISB# and AGND.
An external supply PVCC = 5V is required for driving the
MOSFETs. The MOSFETs are designed with optimally Power up sequence design must be implemented to
customized gate thresholds voltages to achieve the most ensure proper coordination between the module and
advantageous compromise between fast switching external PWM controller for soft start and system enable/
speed and minimal power loss. The integrated gate driver disable. It is recommended that the AOZ5311NQI should
is capable of supplying large peak current into the Low- be disabled before the PWM controller is disabled. This
Side MOSFET to achieve fast switching. A ceramic would make sure AOZ5311NQI will be operating under
bypass capacitor of 1F or higher is recommended from the recommended conditions.
PVCC (Pin 29) to PGND (Pin 28). The control logic
supply VCC (Pin 3) can be derived from the gate drive Input Voltage VIN
supply PVCC (Pin 29) through an RC filter to bypass the AOZ5311NQI is rated to operate over a wide input range
switching noise (See Typical Application Circuit). from 2.5V to 20V. For high current synchronous buck
converter applications, large pulse current at high
The boost supply for driving the High-Side MOSFET is frequency and high current slew rates (di/dt) will be
generated by connecting a small capacitor (100nF) drawn by the module during normal operation. It is
between the BOOT (Pin 5) and the switching node strongly recommended to place a bypass capacitor very
PHASE (Pin 7). It is recommended that this capacitor close to the package leads at the input supply (VIN). Both
CBOOT should be connected to the device across Pin 5 X7R or X5R quality surface mount ceramic capacitors are
and Pin 7 as close as possible. A bootstrap switch is suitable.
integrated into the device to reduce external component
count. An optional resistor RBOOT in series with CBOOT The High-Side MOSFET is optimized for fast switching
between 1Ω to 5Ω can be used to slow down the turn on by using low gate charges (QG) device. When the
speed of the High-Side MOSFET to achieve both short module is operated at high duty cycle ratio, conduction
switching time and low VSWH switching node spikes at loss from the High-Side MOSFET will be higher. The total
the same time. power loss for the module is still relatively low but the
High-Side MOSFET higher conduction loss may have
Under-Voltage Lockout higher temperature. The two MOSFETs have their own
AOZ5311NQI starts up to normal operation when VCC exposed pads and PCB copper areas for heat
rises above the Under-Voltage Lock-Out (UVLO) dissipation. It is recommended that worst case junction
threshold voltage. The UVLO release is set at 3.5V temperature be measured for both High-Side MOSFET
typically. Since the PWM control signal is provided from and Low-Side MOSFET to ensure that they are operating
an external controller or a digital processor, extra caution within Safe Operating Area (SOA).
must be taken during start up. AOZ5311NQI must be
powered up before PWM input is applied. PWM Input
AOZ5311NQI is compatible with 3V and 5V (CMOS)
Normal system operation begins with a soft start PWM logic. Refer to Figure 1 for PWM logic timing and
sequence by the controller to minimize in-rush current propagation delays diagram between PWM input and the
during start up. Powering the module with a full duty MOSFET gate drives. AOZ5311NQI is compatible with
cycle PWM signal may lead to many undesirable 3V and 5V (CMOS) PWM logic. Refer to Figure 1 for
consequences due to excessive power. AOZ5311NQI PWM logic timing and propagation delays diagram
provides some protections such as UVLO and thermal between PWM input and the MOSFET gate drives.
monitor. For system level protection, the PWM controller
The PWM is also compatible with Tri-State input. When When the falling edge of switching node VSWH goes
the PWM output from the external PWM controller is in below 1V, the blanking period is activated. After a pre-
high impedance or not connected both High-Side and determined value (tPDHL), the complementary Low-Side
Low-Side MOSFETs are turned off and VSWH is in high Gate Driver output GL is turned on
impedance state. Table 2 shows the thresholds level for
high-to-low and low-to-high transitions as well as Tri- This mechanism prevents cross conduction across the
State window. input bus line VIN and PGND. The anti-overlap circuit
monitors the switching node VSWH to ensure a smooth
There is a Hold-off Delay between the corresponding transition between the two MOSFETs under any load
PWM Tri-State signal and the MOSFET gate drivers to transient conditions.
prevent spurious triggering of Tri-State mode which may
be caused by noise or PWM signal glitches. The Hold-off Thermal Warning (THWN)
Delay is typically 25ns. The driver IC temperature is internally monitored and an
thermal warning flag at THWN (Pin 30) is asserted if it
Table 2. PWM Input and Tri-State Thresholds exceeds 150°C. This warning flag is reset when the
temperature drop back to 120°C. THWN is an open drain
Thresholds VPWMH VPWML VTRIH VTRIL
output that is pulled to AGND to indicate an over-
AOZ5311NQI 2.7 V 0.72 V 1.35 V 1.95 V temperature condition. It should be connected to VCC
Note: See Figure 2 for propagation delays and tri-state window.
through a resistor for monitoring purpose. The device
will not power down during the over temperature
Diode Mode Emulation of Low Side MOSFET condition.
(SMOD#)
AOZ5311NQI can be operated in the diode emulation or PCB Layout Guidelines
pulse skipping mode using SMOD# (Pin 2). This enables AOZ5311NQI is a high current module rated for
the converter to operate in asynchronous mode during operation up to 2MHz. This requires fast switching
start up, light load or under pre-bias conditions. speed to keep the switching losses and device
temperatures within limits. An integrated gate driver
When SMOD# is high, the module will operate in within the package eliminates driver-to-MOSFET gate
Continuous Conduction Mode (CCM). The Driver logic pad parasitic of the package or on PCB.
will use the PWM signal and generate both the High-Side
and Low-Side complementary gate drive outputs with To achieve high switching speeds, high levels of slew
minimal anti-overlap delays to avoid cross conduction. rate (dv/dt and di/dt) will be present throughout the
power train which requires careful attention to PCB
When SMOD# is low, the module can operate in layout to minimize voltage spikes and other transients.
Discontinuous Conduction Mode (DCM). The High-Side As with any synchronous buck converter layout, the
MOSFET gate drive output is not affected but Low-Side critical requirement is to minimize the path of the primary
MOSFET will enter diode emulation mode. See Table 2 switching current loop formed by the High-Side MOSFET,
for all truth table for DISB#, SMOD# and PWM inputs. Low-Side MOSFET, and the input bypass capacitor CIN.
The PCB design is greatly simplified by the optimization
Gate Drives
of the AOZ5311NQI pin out. The power inputs of VIN
AOZ5311NQI has an internal high current high speed and PGND are located adjacent to each other and the
driver that generates the floating gate driver for the High- input bypass capacitors CIN should be placed as close
Side MOSFET and a complementary driver for the Low- as possible to these pins. The area of the secondary
Side MOSFET. An internal shoot through protection switching loop is formed by Low-Side MOSFET, output
scheme is implemented to ensure that both MOSFETs inductor L1, and output capacitor COUT is the next
cannot be turned on at the same time. The operation of critical requirement. This requires second layer or “Inner
PWM signal transition is illustrated as below. 1” to be the PGND plane. VIAs should then be placed
near PGND pads.
1. PWM from logic Low to logic High
While AOZ5311NQI is a highly efficient module, it is still
When the falling edge of Low-Side Gate Driver output GL dissipating significant amount of heat under high power
goes below 1V, the blanking period is activated. After a conditions. Special attention is required for thermal
pre-determined value (tPDHU), the complementary High- design. MOSFETs in the package are directly attached to
Side Gate Driver output GH is turned on. individual exposed pads (VIN and PGND) to simplify
thermal management. Both VIN and VSWH pads should
2. PWM from logic High to logic Low be attached to large areas of PCB copper. Thermal relief
pads should be placed to ensure proper heat dissipation descending down through the rest of the layers. Refer to
to the board. An inner power plane layer dedicated to Figure 14.
VIN, typically the high voltage system input, is desirable
and VIAs should be provided near the device to connect
the VIN pads to the power plane. Significant amount of
heat can also be dissipated through multiple PGND pins.
A large copper area connected to the PGND pins in
addition to the system ground plane through VIAs will
further improve thermal dissipation.
Part Marking
AOZ5311NQI
(QFN5x5)
BLN0
Part Number Code
YWLT
LEGAL DISCLAIMER
Alpha and Omega Semiconductor makes no representations or warranties with respect to the accuracy or
completeness of the information provided herein and takes no liabilities for the consequences of use of such
information or any product described herein. Alpha and Omega Semiconductor reserves the right to make changes to
such information at any time without further notice. This document does not constitute the grant of any intellectual
property rights or representation of non-infringement of any third party’s intellectual property rights.
ALPHA AND OMEGA SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS.
As used herein: 2. A critical component in any component of a life
support, device, or system whose failure to perform can
1. Life support devices or systems are devices or be reasonably expected to cause the failure of the life
systems which, (a) are intended for surgical implant into support device or system, or to affect its safety or
the body or (b) support or sustain life, and (c) whose effectiveness.
failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
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