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IRF1010NS
IRF1010NS
IRF1010NS
l Advanced Process Technology IRF1010NL
l Ultra Low On-Resistance HEXFET® Power MOSFET
l Dynamic dv/dt Rating D
l 175°C Operating Temperature VDSS = 55V
l Fast Switching
l Fully Avalanche Rated RDS(on) = 11mΩ
G
Description
Advanced HEXFET ® Power MOSFETs from ID = 85A
International Rectifier utilize advanced processing S
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its D 2 P ak T O -26 2
low internal connection resistance and can dissipate up to IRF1010NS IRF1010NL
2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 85
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 A
IDM Pulsed Drain Current 290
PD @TC = 25°C Power Dissipation 180 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 43 A
EAR Repetitive Avalanche Energy 18 mJ
dv/dt Peak Diode Recovery dv/dt 3.6 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.85
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W
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02/14/02
IRF1010NS/IRF1010NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 11 mΩ VGS = 10V, ID = 43A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 32 ––– ––– S VDS = 25V, ID = 43A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 120 ID = 43A
Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 41 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 13 ––– VDD = 28V
tr Rise Time ––– 76 ––– ID = 43A
ns
td(off) Turn-Off Delay Time ––– 39 ––– RG = 3.6Ω
tf Fall Time ––– 48 ––– VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V
trr Reverse Recovery Time ––– 69 100 ns TJ = 25°C, IF = 43A
Qrr Reverse Recovery Charge ––– 220 230 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by This is a calculated value limited to TJ = 175°C .
max. junction temperature. ( See fig. 11 )
Calculated continuous current based on maximum allowable
Starting TJ = 25°C, L = 270µH
junction temperature. Package limitation current is 75A.
RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12)
ISD ≤ 43A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, Uses IRF1010N data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
TJ ≤ 175°C
For recommended footprint and soldering techniques refer to
Pulse width ≤ 400µs; duty cycle ≤ 2%.
application note #AN-994.
This is a typical value at device destruction and
represents operation outside rated limits.
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IRF1010NS/IRF1010NL
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100
4.5V
4.5V
10 10
1
20µs PULSE WIDTH
T = 25 C
J °
1
20µs PULSE WIDTH
T = 175 C
J °
100 2.5
ID = 85A
R DS(on) , Drain-to-Source On Resistance
TJ = 25 ° C
I D , Drain-to-Source Current (A)
2.0
TJ = 175 ° C
(Normalized)
1.5
10
1.0
0.5
1
V DS = 25V
20µs PULSE WIDTH
0.0
VGS = 10V
4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C)
20
6000
VGS = 0V, f = 1 MHZ
ID = 43A
Ciss = Cgs + Cgd, Cds SHORTED VDS = 44V
4000 Ciss
12
3000
Coss
8
2000
1000 Crss 4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
1 10 100 0 20 40 60 80 100 120
1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100
TJ = 175 ° C
100
100µsec
10
10 1msec
1 TJ = 25 ° C
Tc = 25°C
Tj = 175°C 10msec
V GS = 0 V
1
Single Pulse
0.1
0.0 0.6 1.2 1.8 2.4
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
100
RD
LIMITED BY PACKAGE VDS
VGS
80 D.U.T.
RG
I D , Drain Current (A)
+
-VDD
60
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
D = 0.50
Thermal Response (Z thJC )
0.20
0.10
0.1
0.05 P DM
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
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IRF1010NS/IRF1010NL
500
ID
RG D .U .T + 300
V
- DD
IA S A
2V0GS
V
tp 0 .0 1 Ω
200
50KΩ
12V .2µF
QG .3µF
VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
6 www.irf.com
IRF1010NS/IRF1010NL
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ ISD]
8.89 (.350)
1.40 (.055) 1 .39 (.055) REF.
3X
1.14 (.045) 0.93 (.037) 0.55 (.022) 1 .14 (.045)
3X 0.46 (.018)
0.69 (.027)
5.08 (.200 ) 0.25 (.010) M B A M M IN IM U M R E C O M M E N D E D F O O TP R IN T
N O TE S : LE A D A S S IG N M E N TS 8.89 (.350)
1 D IM E N S IO N S A F T E R S O LD E R D IP . 1 - G A TE
2 - D R A IN 17.78 (.700)
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 - SOURCE
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
3.81 (.150)
2.54 (.100)
2.08 (.082) 2X
2X
A
IN TE R N A T IO N A L PART NUMBER
R E C TIF IE R
F530S
LOGO
9246
9B 1M D A TE C O D E
(Y Y W W )
ASSEMBLY
YY = YEAR
LOT CODE
W W = W EEK
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IRF1010NS/IRF1010NL
Package Outline
TO-262 Outline
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IRF1010NS/IRF1010NL
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3 )
4 .1 0 (.1 6 1 ) 1 .5 0 (.0 5 9 )
3 .9 0 (.1 5 3 ) 0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
F E E D D IR E C T IO N
330.00 6 0.0 0 (2 .3 6 2)
(14.173) M IN .
M A X.
3 0 .4 0 (1 .1 9 7)
N O TES : MAX.
1. C O M F O R M S T O E IA -41 8. 26.40 (1.039) 4
2. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 24.40 (.961)
3. D IM E N S IO N M E A S U R E D @ H U B .
3
4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/02
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