The forbidden energy gap for

C Si is l tell
Eg E
Ge is to tell
Eg

Recombination electron hole

of fair
whenever a
free e moves near a

hole it is to get
highly likely
trapped In energy
band model As
be the demotion
of
can as an
seen
e from CB to VB hence in

the deexcittin the e looses

process
to band gap
of his released
energy energy
the
of
is absorbed one e
by of to us
VB it gets promoted
This a
dynamic eft is
way where E h
achieved
pair recombination
L
new e
fair cretin simultaneously
hence K
keeps on place
taking
temp remains const

DIODES These in general men which allow

devices

current in one direction but

passage of
prohibits i be otter
Semiconductors can be used to heme diodes

these diodes are known as semiconductor

known as
diodes or also PNjunction diode

Electrical symbol

p
bed pointing from
type Iowans
arrow
p
w
type

PW diode is formed the fusain

junction by wilt
a P type Semiconductor an
of semiconductor at Ctu junction
N
type

h h h h e
e e
e
h h h h e
e h
p ee e
k N e
b e h e h e
h h e r e e

ki holes
j e free e

flywhen gas is attained

 depletion
region
I 1
h he 1i 0 0e i
e e e e
e 0 00 i e h h
h P h iI N e
e
0 ie e
e
h 0 h
h h i 0e 0 0
e
te e e
i
i
i
l I
r i
electric ifield
i
E internal
1 i

I
fixe ions
l
pt
fixed iois Arl
l l
l l
l
l
l
t
l
Y bl l
l l
l
ll
l
t I
st
l
f
l
vB i
f I I

i i l sa

VB potential barrier

The 0 indicate fixed ions hence

cannot in conduction
participate
they kin
is the order
Depletion
b
region very of
lo ne
ofThe OF V Si
potential barrier is for
o 311 fr Ge
when P S.c was brought in
type Sc
contact with N type due to
 A
concentration gradient e from N type
holes from P type started diffusing
towards each other diffusion fr majority

charge carriers This caused trap of

a

e the holes near A junction

byP sire
on This created fixed ions
heev
junction phosphorus atoms which
Aluminum
left e become the charged
atoms which accept e become
why
changed which in turn created an

internal electric field near junction

from N type towards P
type
hence N is at higher potential
type
Ust P type with more more

diffusion of majority charge carriers

the E becomes hence the
stronger
pot diff across the thin region where
E exists iherreeses This potential
doff created was teemed as the
barrier
potential
At SS the Vps becomes so high bet
i e
majority of majority charged carriers
e ow N Sire Roles on
p sire are

A one to pass through at junction

only few highly energetic majoritygeorge
 y
carriers will
ybe able to
y
pass through
The rate
of flow of these majority
charge carriers give us diffusion current
Simultaneously the deyoe
minority
carriers i.e e on P type holes
on N
few in number occassi
type being

only fall Gaough this depletion region

their movement is fatter facilitated
to move across
junction unlike fu
charge carriers The rate
of flow
majority
the carriers across
of mining charge
junction constitute the drift current

Diffusion current from Ptype towards N type

Dnft current from N

type towards P type
diffusion
The order
ofan magnitude
of drift
current in unbiased diode is same lo 6N

This net current across

junction
Inet I deff Idrift 0

Unbiased diode implies a diode across

which no external pot diff is applied

diode
Biasing of
 connection
The of
a
process battery
Cte terminals diode is known
across
of
as biasing
is two
Biasing of types

C Forward bias
Reverse bias

FORWARD Bias
9T means htt P type has to be at

potential Wrt N type

higher

T.tl
Let depletion region after FB

I I Fext
Inet Idiff Ian
t
P
f Ei I
I N CMA Gw
1
I Idiot
Sare

depletionregion in
unbiased diode
I
when a forward bias is applied the
the deflation
external electric field within region
is found to be opposite to be Eternal
electric Thus the het electric few
fief
a region tis effectively
dereeses
decreases the potential boonies as
well

the width depletion region This

as
of
the diffusion current
drashiony improves
as the majority cherge carriers

being large in number with 4 lb

are eesi ask 6 move across
key increase
junction This causes an

Wrt unbiased diode

in diff
current
a
fan almost 1000
Ge oforder
by
hence diffusion
nut
of
in

current is obtained
This FB has negligible effect on
drift current since were
AA key
less in number L their movement
was facilitated not restricted across
Ee junction
Hence a flows from
net aurrent
P type toward N type in hi order
mA This is said to be the
of
 GFnventional
ocreetin current
in diodes
few of of

REVERSE Bins
Here P type will be at lower potential
ust N
type
Re
N Atp
LN

depletionregion in RB
diode
text f
I f Eit I
P 101 0 0
11 N
I I e I l
Pio t
v
Inet depletion region
unbiased diode
of
I'drift Idiffkeen
less fray 11
Mrs
CHA

Idingt
AA In this case die to Gu applied bias
Ctu external E increases the act E
In the depletion region which increased
 Gie Up well thickness depletion
as as
of
region
even the
This hikes the movement
of
carriers
energetic majority verge
more difficult across the junction Hence
diffusen arrant decreases
drastically
But drift arrant hes no measurable
henge Shes a het current a he
order by
opposite
fA fog
conventind flow
in a direction
from N type
towards P type

I Y characteristics diode
of
sICmny
village
Breakdown

RB
I ItdI
I
A

vz
i 2 7
vHtdV y
l

ti voltage Cvn
knee

E info
IutEsiaeMICfrA
The resistance
of diode is dependent upon
the applied pet Eff across it it decreases
 wilt increase a FB voltage This is unlike
ohmic conductors since for Kem resistance
is a
property of counter is Deponent

of voltage
Thus we define Dynamic resistance for
semiconductors arich is at a certain voltage
Y as
defend

fr dd
Laid 0

On RB as we increase hi reverse
applying
the due to drift
voltage anent
of
minority does not change significantly initially
tell a certain voltage known as Breakdown
further increase
voltage after which any
in RB village suddenly leads to
generation large number chege assierg
in hi depletion region this causes
a Sudden large increase in Gwent
This p 3
Jdiode
 Mechanism breakdown
of

M D
Zener breakdown Avalanche Breakdown

Zener Breakdown

Zener Diode P N
type SC
highly dopey
depletion region is kin

Electric field in the region

wiubehu.gr
E
Si 7
F To

Si Si si

y
Si
F
E o

wit Zener diode

symbol
of
P 51
y N
when a
sufficiently high reverse bias is
applied the E in Ee depletion region
becomes so high that it snatches breaks
bono the bonded e from he fixed
atoms lion broken bond Here
for each
is creation an e h pair
of
a

which has no chance recombination as

the force on Ken is
of opposite to
always
each other its there Wow bonds

which are
of simian strength
if
we bond breeks it is obvious that
bows will break
large number
of there win be
hence large
suddenly
bunker
within Eu of charge
regrin
arorrier creates
Chick explains hi
sudden high Covent
Once breakdown hes taken place At
becomes coast
pet Oiff across Zener diode
hence it finds an
important
application in its usage as volcage
cast voltage across
regulator maintaining
a device
A Zener diode is like a normal
breakdown has not taken plece i.e
diode
if
G k w big
L
I f
 low resistance putt in forward bias
resistance in reverse bias
high

Usage as voltage regulator

R
Hanoun
s voltage

an I C H GER R C Y

No breakdown

diode a resistance behavior

ideally

1
ER

T
I
her i diode
Y
Ase I H R H
p p

Breakdown taken piece

hence
BY across diode
across R will become
constant at Yz
b Ri Che
y W
i Us Hz i
ip H
Pul viz in Fu
so R
Vs
He
I
c

Power consumed
by Zener diode Vz iz

AVALANCHE BREAKDOWN

extent lesser tan Zener

Doping is
relatively diode
4
17
depletion region is wider
 I l
O l
I i
P t 0 I N
e ise
I
e.IQ904l I

I 0 i

Here the depletion region is wide further

increased due to reverse bias hence

the minority amers e from P side

change
when enter the junction are accelerated
they key
towards N Sc in hi process
type
ga
m
sufficient so Kat aren
they energy
Louise hit a bonded e within depteturi
Arey
make it free creating
a
region key keenly
e h These e h pair are fuecter
pair
the E Lance
Kay again
accelerated

lead to by creation new h pair

of
e

In his manner e h fairs are

bye
created in chain which explains the sudden
current
high
its the e h created due to
fair are
collision Kennel energy is also liberated here
 energy

large amber such collisions take

As of
heat
place sufficient is generated
energy
which
destroys
ke
junction hakes hi
diode non reusable This we
say
Zener Breakdown is reversible while avalanche
isn't

I Y characteristics
of Diode

7
Zero reusland resistance in
a forward
boa's hearse brag

SI
ioedf.ae diode
4 Fetid
7 y

Applications

Q A Si diode is connected to a resistance Re

is 54
of Hye
and a
battery Yz which
The Si is 074
knee
voltage of If
the diode
requires a min current
of 1mA
to attain a value higher ban knee voltage
Chet hey resistance R needs to be applied
 wi series Out the at diode
0711 battery
4 pi
H m

K 0711
1mg

11
43 511

i VB Va 5 of
Tg R
1 103

4 3 103 n

4.3 Kr

Gr Gr Gr Gr
Q1 m m m m

Du
D I Dz
3N
H m
lyD m
3

3OV
g Il3oV

Diodes are iced Find arrent Keogh

diode Dz in both Ose's
g out
4h Gr
ego CRE
un Ge X f 39 15 5A
TT
w w

ti
or
i
g
6
3N
nu
I i
30
C
3011
15A
 Fx 5A 2 15A

gov't i
3f 5A
at suit ne

I
sire
30W
i Ii
assume batteries ideey
terminer
we
try
to fin mice of G of
the aide is at higher ftential
it from ten act by
then analysing
sunning
2mA 5km AKOV
coign
un

TETE
is FB
loner EE
2mA B loll

30N
Ii
 HI

10kt 5km
m un

N I
I 1
30 IN
2 193 4.5mA

RECTIFIERS

T
HffhanerectifierCHwpy
fun were rectifier Fury
skin
skin

1
2 at t
l l l l l
t l l

t Yy Hwa
l 117EUR I
Yoji f
l l 1
stout I t t l l
l IAl n ini x at
IT
 Hwa
FB ideally Shortoke
1 Hout
s
Dl T
s
Hs RB pullout y
FAM
t
u
input fry outputfree
vans HAITI 4
a Turie period hennig E
unchanged

FWR
c Centre tapped Cli Bridge Rectifier

Centretpted Di i Cin
a hey of cycle
H
r
R i
GOLD
Ven Mr
9 I E
z t
ly tout ti niu
siskin 20 halfofgeley
g D
Dz
 AVA

Vo artful freq
t 2x input fog
21
1
I l f time period
I 1
is helmed
VBS
l
I
I
f
i
1 Outlao voltage

until
Vo t
B
i l i LY Fa TILI
l I i
w t I i 2
I l l
ans
o
Aff
I l
l t
44
ith y The
Vo
E V

Bridge Rectifier A

i
T

t
B o
 A VAB

IM n

i
stout 1 I
s
1

I
il
n
I
ftp.XDnP t

OPTOELECTRONIC DEVICES
Photo diode
LED
Solar Cell

Photo diode

Electrical symbol I

These are used as photo

detecting