ECT201 Solid State Devices

Introduction

Mr. Albins Paul

Asst. Professor
Dept. of Electronics and Communication Engineering
ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Vaccum Tube
Electronic action occurred in a gaseous state

It is a device that controls electric current flow in a high vacuum between electrodes

to which an electric potential difference has been applied.

The simplest vacuum tube, the diode, invented in 1904 by John

Ambrose Fleming, contains only a heated electron-emitting
cathode and an anode.
English electrical engineer and physicist who
invented the first thermionic valve or vacuum tube

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Drawbacks of Vaccum tube

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Solid State Devices

Electronic action occurred in a solid state

Solid-state electronics means semiconductor electronics; electronic equipment using semiconductor devices such

as transistors, diodes and integrated circuits (ICs).

The term "solid state" became popular in the beginning of the semiconductor era in the 1960s to distinguish this new
technology based on the transistor, in which the electronic action of devices occurred in a solid state, from previous
electronic equipment that used vacuum tubes, in which the electronic action occurred in a gaseous state.

Solid State Electronics Vaccum Tubes

A semiconductor device works by controlling an electric Thermionic vacuum tubes worked by controlling
current consisting of electrons or holes moving within a current conducted by a gas of particles, electrons
solid crystalline piece of semiconducting material such or ions, moving in a vacuum within a sealed tube.
as silicon

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

First Solid State Device

The transistor, invented in 1947 by Bell Labs, was the first solid-state device to come into commercial use
in the 1960s.
Who is the only person to be awarded
the Nobel Prize in Physics twice?
John Bardeen, Walter Brattain and William
Shockley invented the first working transistors John Bardeen
First in 1956 with William Shockley and Walter
at Bell Labs, the point-contact transistor in 1947 Brattain for the invention of the transistor; and
again in 1972 with Leon N Cooper and John
and the bipolar junction transistor in 1948. Robert Schrieffer for a fundamental theory of
conventional superconductivity

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Invention of Solid State Devices invention 

in 1947 began the electronics revolution 

1947 2020

Moore's Law states that the number of transistors on a microchip doubles

about every two years, though the cost of computers is halved. In 1965,
Gordon E. Moore, the co-founder of Intel, made this observation that
became Moore's Law.
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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Semiconductor Devices
Based on the conductivity, materials can be classified into

Conductor Semiconductor Insulator

Semi Conductor- Whose conductivity can be tuned or tailored by many order of

magnitude

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Electrical Conductivity

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

At 0K

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Semiconductor
Semiconductors are employed in the manufacture of various kinds of electronic
devices, including diodes, transistors, and integrated circuits. Such devices have
found wide application because of their compactness, reliability, power efficiency,
and low cost.

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Course Content
• Band Diagram
• Doping
Basics • P-N Junction diode
• Electron and Holes Devices
• MOS Capacitor
Module 1 & 2 • Carrier Concentration
• MOSFET Module 3,4 & 5
• Fermi-Dirac Statistics
• BJT
• Transport
• Carrier Recombination

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Text Books
1. Ben G. Streetman and Sanjay Kumar Banerjee, Solid State Electronic Devices, Pearson 6/e, 2010
2. 2. Sung Mo Kang, CMOS Digital Integrated Circuits: Analysis and Design, McGraw-Hill, Third Ed., 2002
(Modules IV and V)

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Course Outcomes
After the completion of the course the student will be able to
•CO 1- Apply Fermi-Dirac Distribution function and Compute carrier concentration at equilibrium and the
parameters associated with generation, recombination and transport mechanism
•CO 2- Explain drift and diffusion currents in extrinsic semiconductors and Compute current density due to
these effects.
•CO 3- Define the current components and derive the current equation in a pn junction diode and bipolar
junction transistor.
•CO 4- Explain the basic MOS physics and derive the expressions for drain current in linear and saturation
regions.
•CO 5- Discuss scaling of MOSFETs and short channel effects. 12
ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Assessment
Continuous Internal Evaluation Pattern:
Attendance : 10 marks
Continuous Assessment Test (2 numbers) : 25 marks
Assignment/Quiz/Course project : 15 marks

End Semester Examination Pattern: There will be two parts; Part A and Part B. Part A contain 10 questions with
2 questions from each module, having 3 marks for each question. Students should answer all questions. Part B
contains 2 questions from each module of which student should answer any one. Each question can have
maximum 2 sub-divisions and carry 14 marks.
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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Module 1
• Elemental and compound semiconductors
• Intrinsic and Extrinsic semiconductors
• Doping & Energy band diagram,
• concept of effective mass,
• Fermi Dirac distribution, Fermi level
• Equilibrium and steady state conditions,
• Density of states & Effective density of states,
• Equilibrium concentration of electrons and holes.
• Excess carriers in semiconductors: Generation and recombination mechanisms of excess carriers, 14

quasi Fermi levels.

ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Elemental and Compound Semiconductors

The elemental semiconductors are

those composed of single species of
atoms

Compound semiconductors, which
are composed of two or more
elements.

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Elemental and Compound Semiconductors

1. Si and Ge are also widely used as infrared and nuclear radiation detectors.
2. The two-element (binary) III-V compounds such as GaN, GaP, and GaAs are common in light-emitting
diodes (LEDs)
3. Fluorescent materials such as those used in television screens usually are II-VI compound
semiconductors such as ZnS.
4. Light detectors are commonly made with InSb, CdSe, or other compounds such as PbTe and HgCdTe.
5. An important microwave device, the Gunn diode, is usually made of GaAs or InP.
6. Semiconductor lasers are made using GaAs, AlGaAs, and other ternary and quaternary compounds.
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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Intrinsic and Extrinsic Semi Conductors

https://www.youtube.com/watch?v=JBtEckh3L9Q

• The electronic and optical properties of semiconductor materials are strongly affected by impurities,
which may be added in precisely controlled amounts.
• For example, an impurity concentration of one part per million can change a sample of Si from a
poor conductor to a good conductor of electric current. This process of controlled addition of
impurities, called doping

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ECT-201 Solid State Devices. Dept. Electronics and Communication Engineering

Thank You

Summary
1.What is Solid state devices
2.Importance of Solid state devices
3.What is semiconductor
4.Elemental and Compound Semiconductors
5.Intrinsic and Extrinsic Semiconductors
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