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LP L 2A
NGUYN DUY MNH
- Dng phn cc ngc rt nh, nhng khi in p ngc t trn chuyn tip PN tng vt qua mt gi tr nht nh dng ngc s tng t ngt
l hin tng nh thng, hin tng ny c th lm hng dng c nhng c mt s loi dng c hot ng da trn c ch ny.
- Hai c ch nh thng chuyn tip PN l:
+ C ch thc l: Khi in p ngc tng, in trng trong min in tch khng gian tng, ht dn thiu s b cun qua in trng c ng
nng ngy cng ln, khi chuyn ng chng va p vi cc nguyn t lm bn ra in t lp ngoi ca chng, s in t t do mi pht sinh do
va chm ny cng c in trng mnh gia tc, chng tip tc p vo cc NT mi lm bn ra in t t do. Hin tng ny xy ra lin tc
v nhanh, khin s ht dn trong bn dn tng t ngt, in tr sut chuyn tip gim i, dng qua chuyn tip PN tng t ngt.
+ C ch xuyn hm: Khi in trng ngc tng ln, cn cung cp nng lng cho cc in t lp ngoi cng ca NT bn dn, nu cc in
t ny c nng lng ln chng tch ra khi NT to thnh in t t do, NT b ion ha. Nu in trng ngc ln hin tng ion ha xy
ra nhiu dn n s lng ht dn trong bn dn tng t ngt, lm cho dng ngc tng nhanh
nhanh.
FEEPTIT
Lecture
nh thng thc l ph thuc vo rng min in tch khng gian, vng ny cng rng th s ln va
chm cng nhiu.
nh thng xuyn hm khng ph thuc vo rng min in tch khng gian.
nh thng thc l c th tng ln khi b kch thch lm cho hin tng thc l c th xy ra sm v mnh
lit hn. V tng ht dn x ko theo lm tng s ion ha.
nh thng xuyn hm khng ph thuc vo s tng kch thch
H s nhit ca nh thng thc l dng, nh thng xuyn hm. V khi tng nhit th min nhit
in tch khng gian tr nn hp hn nn tng kh nng xuyn hm. Vic xuyn hm sm xy ra vi vy,
tng nhit dn n in p nh thng xuyn hm gim
nh thng thc l ph thuc ch yu vo sut ion ha (Suaats ion ho c nh ngha : s lng s lng in
t v l trng c sn sinh do mt ht dn di tc ng ca in trng di chuyn mt n v di), nh
vy nhit tng in p nh thng tng.
Ngoi ra Diode c ni tr thay i rt ln, khi phn cc thun R D = 0 (ni tt), khi phan cc nghch
nhthngthcl(nhnthcl):doionhavachmkhihtdnchuynngtrongin
trng.nhthngthclchsnhitdng.
onhthnghiungZener(haynghm):dohiungnghmvnhthngnych
snhitm.
NhnbitnhthngthclvZenerquainpnhthngVBR:
thngthVBR<4VlnhthngZener;VBR>6Vlnhthngthcl;4VVBR6Vcthit
ksdngchailoinhthngthclvZener
I(mA)
Ge
Si GaAs
I(mA)
forward
-40
-20
reverse
br
ea
kd
2
0
Va(V)
Va(V)
0.2
0.4
0.6
0.8
1.0
r Va
Ea
E bi
diode) gim.
Va > 0
Va < 0
Vbi -Va
Vbi -Va
Vbi
Vbi
x
forward case
x
reverse case
gradient trong min P. Tng t, l trng s c mt phn b hole gradient trong min N.
Hai gradient ny s hnh thnh bi dng khuch tn (diffusion current), nhng khng
phi ca cc ht c bn m l ca cc phn t ti khng c bn. iu c ngha l, hole
khi bn P l majority carrier, nhng khi sang bn N li l minority carrier. Ngc li,
electron khi bn N l majority carrier, nhng sang P s l minority carrier. V dng in
trong c trng V-I thu c trn th chnh l dng khuch tn ca cc ht ti khng c
bn ny. Dng ny bin i theo quy lut hm exponent.
qD p p
n
op
I A[
Va = 0
non
qD
on
qV
pop
][exp
L
1]
kT
pon
nop
Trong ,
depletion
region
Lp, L
chiu
Dp, Dn
hng s khuch tn
di
khu
(diffusion constant)
tn
(diffu
pon
mt hole khng
c bn trong N
nop
mt electron khng
c bn trong P
2.
1.
nop
pop
N
V
non
P
N
nop
pon
non
V
P
pon
Is
r
hiu in th tip xc min ngho tng ln, in trng E
-
r Va
Ea
V
- V
+
vy,
dng
c bn chy qua.
c bn.
Trong biu thc tnh dng trn, Va < 0.
E bi
r
E
I = -Is, Is l dng in ngc bo ha (reverse saturation current)
D pp
I
on
qA[
D nn
op
Trong hin tng nh thng thc l, electron trong min ngho c gia tc bi in
trng cao s c mt ng nng rt ln. Chng s va chm vo cc nt mng ca mng
tinh th v ph v cc lin kt ha tr. Mi mt va chm s ion ha mt nt mng, hnh
thnh mt cp in t - l trng tham gia lm ht ti c bn. Cc cp ny gi l phn t ti
in th cp. Chng li nhn c ng nng ln v li lm ion ha cc nt mng khc.
Kt qu l vic hnh thnh mt lng cc ln cc ht ti v t nhin l hnh thnh dng
in nh thng rt ln.
Zener breakdown
-Vbr
-Vz
-3