Bi 6 : Mch Khuch i Dng Transistor Trng (FET

BI 6 :

MCH KHUCH I DNG

TRANSISTOR TRNG (FET)

MC CH TH NGHIM
1.
2.
3.
4.

Gip sinh vin bng thc nghim kho st cc vn chnh sau y :

Phn bt buc :
Vn phn cc DC : Tm hiu nguyn tc khuch i ca transistor trng (FET), s
mc kiu source chung v o h s khuch i ca transistor trng
Kho st mch khuch i AC ca transistor trng (FET), s mc kiu source chung:
Xc nh Av, Kho st p ng tn s ca mch khuch i, vai tr ca tng tr vo Zin.
Kho st mch khuch i AC s dng transistor MOSFET trong cc s ni kiu Source
chung.
Kho st mch ng m dng MOSFET.

THIT B S DNG
1. B th nghim ATS-11 v Module th nghim AM-107.
2. Dao ng k, ng h o DVM v dy ni.
PHN I :
C S L THUYT
Phn ny nhm tm lc nhng vn l thuyt tht cn thit phc v cho bi th
nghim v cc cu hi chun b sinh vin phi c k v tr li trc nh.

I.1.

TNG QUAN

Transistor gm 2 loi: BJT v FET.

- BJT l phn t c iu khin bng dng in (iC iB ), c tng s tr ng vo nh
nn c ting n thng ln v bt li cc mch khuch i dng ngun tn hiu c
tng tr ra ln.
- FET l phn t c iu khin bng p (iD vGS), c tng tr ng vo ln ( 100M)
nn c ting n thp (ivo 0), thch hp cc tng khuch i tn hiu nh.
Cc u im ca FET:
- Fet n nh hn BJT.
- C kch thc nh hn BJT nn kh nng thch hp cao hn. Nn FET ngy cng c
s dng rng ri.
C nhiu loi FET ng vai tr quan trng trong k thut hin i trong c hai loi c
bn sau:
- Loi ni : JFET (Junction Field Effect Transistor) :
- Loi c cc ca cch ly: MOSFET (Metal-Oxitde-Semiconductor Field Effect
Transistor). Khi ni FET ch loi JFET.

Bi 6 : Mch Khuch i Dng Transistor Trng (FET

I.2.

PHN LOI

1. Loi ni ( JFET: Junction Fet):

D

D
G

FET N

FET P

JFET knh N

JFET knh P
Hnh 5-1: K hiu JFET

2. Loi c ca cch in MOSSFET ( Metal- Oxide-Semiconductor Fet) : gm 2 loi

- MOSFET knh c sn

MOSFET knh c sn loi N

MOSFET knh c sn loi P

Hnh 5-2: K hiu MOSFET knh c sn

-

MOSFET knh gin on:

D

G
S

MOSFET knh gin on loi P

MOSFET knh gin on loi N

Hnh 5-3: K hiu MOSFET knh c sn

I.3.
I.3.1

PHN CC DC

PHN CC FET:
a.
Phn cc t ng: Trong thc t, trnh dng 2 ngun in th bt tin, ngi

ta dng kiu phn cc t ng (self- bias) do in tr Rs trong mch cc

VDD

ngun to ra.
RD

Tht vy, ni G xung mass 0v qua in tr ln RG = 100K 1M,

thm Rs ta c mch sau:

FET N

VGS = VG - VS = - ID Rs

(1)

(VG = 0 do G ni mass)
RG

VGS = - Rs ID : gi l PT ng t ng phn cc cho Fet N

v cng thc Shockley : ID = IDSS(1T (1) v (2) ta suy ra:

VGS 2
) (2)
Vp

IDQ (0 < IDQ < IDSS) v

RS

VGS (VP < VGS < 0)

Bi 6 : Mch Khuch i Dng Transistor Trng (FET

PT ng ra VDD = ID (Rs + RD) + VDS => VDSQ = VDD - IDQ (Rs + RD)
b.

Phn cc kiu cu phn p:

R2

V DD

V DD

RD

RD
FET N

FET N

RGG
R1

RS

Vi:
RG = R1//R2
VGG = (VDD. R1) /(R1+R2)

RS
VGG

Cch xc nh Q:

Ta c : VGS = VGG RS.ID

(1)

ID = IDSS (1-VGS/VP)2

(2)

T (1) v (2) => IDQ

Phng trnh ng ra : VDD =VDS + ID(RS + RD)

(3)

=> VDSQ
I.3.2 PHN CC MOSFET:
a.
Phn cc kiu cu phn p:

V DD

Ta c: RG = R1//R2 , VGG = VDD.R1/(R1+R2)

R2

Vi

VGS = VGG RS ID
ID = IDSS (1-

VGS 2
)
Vp

IG-FET N

(Knh c sn)

k
(Knh gin on)
(VGS V ) 2
2
VDD = VDS + ID (RS + RD)
T (1), (2) => VGSQ, IDQ

(2)

ID =

(3)

T (3) => VDSQ

b.

Phn cc kiu hi tip:

Ta c: VGS = VDS
ID = IDSS (1-

(1)
VGS 2
)
Vp

RD

(1)

(Knh c sn)

k
(Knh gin on)
(VGS V ) 2
2
VDD = VDS + ID (RS + RD)
T (1), (2) (3) => VGSQ; IDQ ; VDSQ

(2)

ID =

(3)

R1

RS

Bi 6 : Mch Khuch i Dng Transistor Trng (FET

I.3.

KHUCH I AC

I.3.1. MCH NGUN CHUNG (SOURCE) :

VDD

Zo
RD
Co

ri

VL

Zi
Ci

ri

FET N

FET N

RL

Vi

RG

RD

Vi

+ Cs

RG

Rs

U.Vgs

Mch khuch i dng FET mc CS

ri

Mch tng ng AC
rds

VL

Vgs

Vi

RG

RD

Mch tng ng tn hiu nh

ri
:c thm vo kim sot dng in ng vo t ngun v1.
RL
:
biu din ti c nhn bi b khuch i.
Rg, Rd, Rs : cung cp phn cc DC FET hot ng.
v gs
v
V
H s khuch i : Av = L = L .
vi v gs vi
vL =

RD // RL
( v gs )
RD // RL + rds

=> Av =

RG
RD // RL
.
RD // RL + rds RG + ri

vi:

Tng tr vo : Zi = RG
Tng tr ra : Z o =

vo
= rds // RD
io

v gs =

RG
.vi
RG + ri

RL

RL

Bi 6 : Mch Khuch i Dng Transistor Trng (FET

I.3.2. MCH MNG CHUNG (DRAIN) :

VDD

ri

Ci

ri

FET N
+

Vi

V
L

Vi

RG
RS

FET N

RG

RL

U.Vg
G

rds

Vg
RG

Vi

VL

(Rs//RL)( u+1)

Mch tng ng tn hiu nh

H s khuch i : Av =

vi:

vL =

=> Av =

vg
vL
V
= L .
vi v g vi

( RS // RL )( + 1)
( v g )
( RS // RL )( + 1) + rds

( RS // RL )( + 1)
RG
( ).(
)
( RS // RL )( + 1) + rds
RG + ri

RL

Mch tng ng AC

Mch khuch i dng FET mc CD

ri

RD

vg =

RG
.vi
RG + ri

Bi 6 : Mch Khuch i Dng Transistor Trng (FET

PHN II :

TIN TRNH TH NGHIM

Sau khi hiu k nhng vn l thuyt c nhc li v nhn mnh PHN I, phn ny bao
gm trnh t cc bc phi tin hnh ti phng th nghim.
Nh vy, SV cn thc hin, mc mch, o c, hiu k v ghi nhn kt qu. Sau mi bi th
nghim, GV hng dn s kim tra v nh gi kt qu th nghim ca SV.

II.1. TRANSISTOR TRNG NI KIU SOURCE CHUNG (Mch A6-1)

II.1.1 KHO ST DC:
II.1.1.A S ni dy : (hnh 6-1)
Cp ngun 12V ca ngun DC POWER SUPPLY cho mch A6-1
Ngn mch mA-k .

Hnh 6-1: Phn cc mch khuch i dng FET (Mch A6-1B)

II.1.1.B

Cc bc th nghim :

1. Ni J3 , khng ni J1, J2 - ni cc cng Gate T1 qua tr R3 & P1 xung t (khng

cp th nui cho cng ca JFET ). Ghi gi tr dng v th trn transistor trng : VGS =
.,
VDS = .,
ID = c gi l dng
Gii thch c im khc bit gia transistor trng FET (yu t iu khin bng th)
v transistor lng cc BJT (yu t iu khin bng dng).
2. Ngt J3 , ni J1, J2 phn cc th cho cng ca JFET
a. Chnh bin tr P1 tng bc c in p iu khin VGS nh bng A6-1. o
in p VDS, tnh dng ID qua FET ghi kt qu vo bng .

VGS (V)
VDS (V)
ID (mA)

0,5

Bi 6 : Mch Khuch i Dng Transistor Trng (FET

Bng A6- 1
0
-0,5
-1V
-1,5
-2V
-3V
-4V
-5V

b. Biu din trn th cc gi tr o c gia dng ID (trc y) v th VGS (trc

x). Xc nh gi tr in th nghn VP (punch off) = (V)
II.1.2 KHO ST CH XOAY CHIU AC: (Vn mch A6-1)
II.1.2.A S ni dy :

Vn ngt J3, ni J1, J2 , phn cc th cho cng ca JFET

Chnh P2 dng qua T1 ~ 1mA

II.1.2.B Cc bc th nghim :
1. o h s khuch i p Av, v lch pha :
- Dng thm tn hiu t my pht tn hiu Function Generator, v chnh my pht
tn hiu c: Sng : Sin , Tn s : 1Khz, VIN(p-p) = 100mV
- Ni ng ra OUT ca my pht n ng vo IN ca mch.
- Dng dao ng k quan st tn hiu in p ng vo v ng ra. o cc gi tr
VOUT, , tnh Av. Ghi kt qa vo bng A6-2
Bng A6-2
Thng s cn o
Tr s in p vo VIN (p-p) = 100 mV
VOUT
VOUT(p-p)
li in p Av =
VIN(p-p)
lch pha

Quan st trn dao ng k v v trn cng mt h trc ta dng tn hiu

in p ng vo (VIN) v tn hiu in p ng ra (VOUT)

Bi 6 : Mch Khuch i Dng Transistor Trng (FET

- Da vo trng thi hot ng ca transistor trng FET ni kiu Source chung
bng A6-2, nu nhn xt v cc c trng ca mch khuch i (v h s
khuch i p Av, lch pha )
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2.

Kho st nh hng tng tr vo ca mch khuch i:

- i ch my pht sng Sin. Gi nguyn bin tn hiu vo ti li vo IN(A)/

A6-1 : VIN1 =100mV
- Sau tho dy tn hiu khi chn IN, o bin tn hiu t li ra my pht xung
(khng ti) . VIN2 =
- So snh bin xung trong hai trng hp, tnh s mt mt bin (%) do nh
hng in tr vo ca s .
V (%) =
3.

Kho st p ng tn s:

- Gi c nh bin in p tn hiu vo VIN (pp) = 100mV. Thay i tn s my

pht sng t cc tiu n cc i (bng cch chnh Range). o bin nh - nh
VOUT(pp) ti ng ra, ghi nhn vo Bng A6-3. Tnh Av.
Bng A6-3
Tn s my pht f [KHz]
Bin VOUT (p-p)
Av
- V biu Boode th hin quan h Bin Av Tn s f theo Bng A6-3

|AV |

f (Hz)
O

Nhn xt v p ng bng thng ca mch khuch i dng FET. So snh vi BJT?

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Bi 6 : Mch Khuch i Dng Transistor Trng (FET

II.2. MCH KHUCH I DNG MOSFET (Mch A6-2)

II.2.1 MCH SOURCE CHUNG (CS) :
II.2.1.A
S ni dy : (Hnh 6-2)
Cp ngun +12V cho mch A6-2

Ngn mch mA k.

Hnh 6-2: Khuch i MOSFET kiu Sourse chung (Mch A6-2)

II.2.1.B Cc bc th nghim :
1. Ghi gi tr dng ban u qua T1: VR3 = ., ID = ..
2. Dng thm tn hiu t my pht tn hiu Function Generator, v chnh my pht tn
hiu c: Sng : Sin , Tn s : 1Khz, VIN(p-p) = 100mV
- Ni ng ra OUT ca my pht n ng vo IN ca mch.
- Dng dao ng k quan st tn hiu in p ng vo v ng ra. o cc gi tr
VOUT, , tnh Av. Ghi kt qa vo bng A6-4
Bng A6-4
Thng s cn o
Tr s in p vo VIN (p-p) = 100 mV
VOUT
li in p Av
lch pha

Quan st trn dao ng k v v trn cng mt h trc ta dng tn hiu

in p ng vo (VIN) v tn hiu in p ng ra (VOUT)

Bi 6 : Mch Khuch i Dng Transistor Trng (FET

- Da vo trng thi hot ng ca MOSFET ni kiu Source chung bng A6-4,

nu nhn xt v cc c trng ca mch khuch i (v h s khuch i p Av,
lch pha )
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II.3. MCH NG M DNG MOSFET (Mch A63)

II.3.1.

S ni dy : (Hnh 6-3)
Cp ngun +12V cho mch A6-3

II.3.2.

Cc bc th nghim :

Hnh 6-3: Mch ng m dng MOSFET (Mch A6-3)

- Ln lt ngn mch cc J theo yu cu trong bng A 6-5, kho st mch ng m

dng BJT (T1) v FET (T2), xc nh trng thi cc LED v dng IB trong mi trng
hp.

STT
1
2
3
4

J1
1

J2

1
1
1
-

J3
1
1

J4

1
1

J5
1
1

Bi 6 : Mch Khuch i Dng Transistor Trng (FET

Bng A6-4
J6 TRNG THI LED
Dng IB

1
1

Trn c s so snh vai tr ng m ca BJT v MOSFET.

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