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Mosfet PDF
Mosfet PDF
2ε si φ s − φ F kT N A
Xd = ; where φ F = − ln .
qN A q ni
Qb' = qN A X d = 2ε si qN A φ s − φ F [C/m2]
Note that the value of VGS when φs =− φF is VTHN. In this situation the
negative charge in the depletion region is described by
Q ' − Qss
'
Q'
VTHN 0 = −φ ms − 2φ F + b 0 = VFB − 2φ F + b0
' '
C ox C ox
and
2qε si N A
γ =
'
C ox
φ ms = (φG − φ ox ) + (φ ox − φ F ) = φG − φ F
Note that a voltage equal to VFB must be applied at the gate for φs = φF.
Spring 2001 EE 8223 − Analog IC Design Page 19
MOSFET Operation
W 2
VSD
I D p = KPp (VSG − VTHP )VSD − for VSG ≥ |VTHP| and VSD ≤ (VSG−|VTHP|)
L 2
IDn =
KPn W
2 L
[
(VGS − VTHN ) 2 ] for VGS ≥ VTHN and VDS ≥ (VGS−VTHN)
• Why does the drain actually increase with VDS > VDS,sat.? Consider
the electrical gate of the MOSFET in SI saturation,
Lelec = Ldrawn − X dl
Then I Dn =
KPn W
2 Lelec
[
(VGS − VTHN ) 2 ]
Channel length modulation (CLM) occurs due to the increase
depletion layer width as VDS increases
∂I D n KPn W dL 1 dX dl
=− (VGS − VTHN ) 2 ⋅ elec = I Dn ⋅ = I Dn ⋅ λc
∂V DS 2 L2 dV DS Lelec dV DS
elec
I Dn =
KPn W
2 L
[
(VGS − VTHN ) 2 1 + λc (V DS − V DS ,sat ) ]
• Also, for large values of VDS, saturation will appear to occur for
values of VDS below VDS,sat due to the fact that QI′(y) is actually a
function of VDS (i.e., it is not constant). This is also the result of
velocity saturation in short channel devices. Velocity saturation
causes VDS,sat and IDS,sat to decrease.
Note that the MOSFET has 3 different levels of inversion: weak, moderate,
and strong. Within each level of inversion, the MOSFET can be saturated or
non-saturated. Hence, the MOSFET 6 different modes of operation.
Spring 2001 EE 8223 − Analog IC Design Page 22
MOSFET Modeling
MOSFET Layout