AOD417

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD417 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low VDS (V) = -30V
gate resistance. With the excellent thermal resistance ID = -25A (VGS = -10V)
of the DPAK package, this device is well suited for RDS(ON) < 34mΩ (VGS = -10V)
high current load applications. RDS(ON) < 55mΩ (VGS = -4.5V)

-RoHS Compliant
100% UIS Tested!
-Halogen Free*
100% Rg Tested!

TO-252
D-PAK Bottom View D
Top View
D

G
S G
S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
G
Continuous Drain TA=25°C -25
Current B,G TA=100°C ID -20 A
Pulsed Drain Current C IDM -60
Avalanche Current C IAR -14 A
C
Repetitive avalanche energy L=0.3mH EAR 30 mJ
TC=25°C 50
PD W
Power Dissipation B TC=100°C 25
TA=25°C 2.5
PDSM W
Power Dissipation A TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16.7 25 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 40 50 °C/W
Maximum Junction-to-Case D Steady-State RθJC 2.5 3 °C/W

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AOD417

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 -1.9 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -60 A
VGS=-10V, ID=-20A 27 34
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 36
VGS=-4.5V, ID=-7A 40 55 mΩ
gFS Forward Transconductance VDS=-5V, ID=-20A 18 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.75 -1 V
IS Maximum Body-Diode Continuous Current -6 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 920 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 140 pF
Crss Reverse Transfer Capacitance 90 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 6 9 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 16.2 nC
Qg(4.5V) Total Gate Charge (4.5V) 8.2 nC
VGS=-10V, VDS=-15V, ID=-20A
Qgs Gate Source Charge 2.9 nC
Qgd Gate Drain Charge 3.6 nC
tD(on) Turn-On DelayTime 8 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=0.75Ω, 30 ns
tD(off) Turn-Off DelayTime RGEN=0.75Ω 22 ns
tf Turn-Off Fall Time 26 ns
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 23 ns
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 14 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The Power dissipation P DSM is based on R θJA (<10s) and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Sep. 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD417

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 25
-10V VDS=-5V
50 ID=-10mA,
-6V VGS=0V 20

40
-4.5V
15
-ID (A)

-ID(A)
30
10
20
VGS=-3.5V 125°C
5
10 25°C
-40°C
0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics
850
60 1.6
185
90
55
Normalized On-Resistance

1.4
50
VGS=-10V
VGS=-4.5V
RDS(ON) (mΩ )

45 1.2 ID=-20A
40
1
35 VGS=-4.5V
30 VGS=-10V ID=-7A
0.8
25

20 0.6
0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150 175

-ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

80 1.0E+01
ID=-20A
70 1.0E+00

1.0E-01
60
RDS(ON) (mΩ )

1.0E-02
-IS (A)

50 125°C 125°C
1.0E-03
40
1.0E-04 -40°C
30 25°C
25°C 1.0E-05
20
3 4 5 6 7 8 9 10 1.0E-06
0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts)
Figure 6: Body-Diode Characteristics

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AOD417

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500
VDS=-15V
ID=-20A ID=-10mA, VGS=0V 1250
8
Ciss

Capacitance (pF)
1000
-VGS (Volts)

6
750
4
500
Crss
2 Coss
250

0 0
0 3 6 9 12 15 18 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
850
185
1000.0 200 90

100.0 160
10µs TJ(Max)=175°C
TC=25°C
ID (Amps)

10.0
Power (W)

100µs 120
RDS(ON) DC
1.0 limited
80

0.1 TJ(Max)=175°C 40
TC=25°C
0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=Tc+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

RθJC=3°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD417

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120 60
-ID(A), Peak Avalanche Current

100 50
ID=-10mA, VGS=0V

Power Dissipation (W)

80 40
TA=25°C
60 30

40 20
TA=150°C
20 10

0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)
850
185
30 60
90

25 50 TA=25°C

40
Current rating

20
Power (W)

15 30

10 20

5 10

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=50°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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AOD417

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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