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SEMICONDUCTOR TECHNICAL DATA


 
  
   
. . . designed for use in general purpose amplifier and switching applications.  
• Collector–Emitter Saturation Voltage — 
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector–Emitter Sustaining Voltage —
 
VCEO(sus) = 60 Vdc (Min) — TIP31A, TIP32A
VCEO(sus) = 80 Vdc (Min) — TIP31B, TIP32B  
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ  
VCEO(sus) = 100 Vdc (Min) — TIP31C, TIP32C
• High Current Gain — Bandwidth Product

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
fT = 3.0 MHz (Min) @ IC = 500 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Compact TO–220 AB Package *Motorola Preferred Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
3 AMPERE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS POWER TRANSISTORS
COMPLEMENTARY

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIP31A TIP318 TIP31C
SILICON
Rating Symbol TIP32A TIP32B TIP32C Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
60 – 80 – 100 VOLTS
Collector–Emitter Voltage VCEO 60 80 100 Vdc 40 WATTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage VCB 60 80 100 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous IC 3.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Peak 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 1.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation PD

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
@ TC = 25_C 40 Watts
Derate above 25_C W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
0.32

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation PD
@ TA = 25_C 2.0 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C 0.016 W/_C CASE 221A–06

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TO–220AB
Unclamped Inductive E 32 mJ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Load Energy (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 150 _C
Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit
_C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient RθJA 62.5
Thermal Resistance, Junction to Case RθJC 3.125 _C/W
(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

 Motorola, Inc. 1995 3–1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

 
 
 
 
 
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 30 mAdc, IB = 0) TIP31A, TIP32A 60 —
TIP31B, TIP32B 80 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIP31C, TIP32C 100 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31A, TIP32A ICEO — 0.3 mAdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C — 0.3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TIP32B, TIP32C — 0.3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICES µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 60 Vdc, VEB = 0) TIP31A, TIP32A — 200
(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B — 200

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C — 200

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 1.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) hFE 25 — —
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) 10 50

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) VCE(sat) — 1.2 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) — 1.8 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 — MHz
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 — —
v
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle 2.0%.

TC TA
40 4.0
PD, POWER DISSIPATION (WATTS)

TC
30 3.0

20 2.0

TA
10 1.0

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
TURN–ON PULSE VCC
APPROX 2.0
RC
+11 V IC/IB = 10
1.0 TJ = 25°C
Vin SCOPE 0.7
Vin 0 tr @ VCC = 30 V
RB 0.5
VEB(off)
t1
t, TIME ( µs)

0.3 tr @ VCC = 10 V
t3 Cjd << Ceb
APPROX
+11 V t1 ≤ 7.0 ns – 4.0 V
0.1
100 < t2 < 500 µs
Vin t3 < 15 ns 0.07 td @ VEB(off) = 2.0 V
0.05

0.03
t2 DUTY CYCLE ≈ 2.0%
0.02
TURN–OFF PULSE APPROX – 9.0 V 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Time Equivalent Circuit Figure 3. Turn–On Time

3–2 Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
D = 0.5
0.5

0.3
0.2
0.2
0.1
0.1 P(pk)
0.05 ZθJC(t) = r(t) RθJC
0.07
RθJC(t) = 3.125°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.02
0.01 TJ(pk) – TC = P(pk) ZθJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

10
There are two limitations on the power handling ability of a
5.0 transistor: average junction temperature and second break-
IC, COLLECTOR CURRENT (AMP)

100 µs down. Safe operating area curves indicate IC – VCE limits of

5.0 ms the transistor that must be observed for reliable operation;
2.0 i.e., the transistor must not be subjected to greater dissipa-
1.0 ms tion than the curves indicate.
1.0 SECONDARY BREAKDOWN
LIMITED @ TJ ≤ 150°C The data of Figure 5 is based on T J(pk) = 150_C; TC is
THERMAL LIMIT @ TC = 25°C variable depending on conditions. Second breakdown pulse
0.5
limits are valid for duty cycles to 10% provided T J(pk)
v
(SINGLE PULSE)
BONDING WIRE LIMIT 150_C. T J(pk) may be calculated from the data in Fig-
0.2 CURVES APPLY TIP31A, TIP32A ure 4. At high case temperatures, thermal limitations will re-
BELOW RATED VCEO TIP31B, TIP32B duce the power that can be handled to values less than the
TIP31C, TIP32C limitations imposed by second breakdown.
0.1
5.0 10 20 50 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

3.0 300
2.0 IB1 = IB2
TJ = + 25°C
ts′ IC/IB = 10
ts′ = ts – 1/8 tf 200
1.0 tf @ VCC = 30 V TJ = 25°C
CAPACITANCE (pF)

0.7
0.5
t, TIME ( µs)

0.3 tf @ VCC = 10 V 100

Ceb
0.2
70
0.1
0.07 50 Ccb
0.05
0.03 30
0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn–Off Time Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data 3–3


 
 
 
 
 
 
500 2.0

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

300 TJ = 150°C VCE = 2.0 V TJ = 25°C
1.6
hFE, DC CURRENT GAIN

25°C
100
1.2 IC = 0.3 A 1.0 A 3.0 A
70 – 55°C
50

30 0.8

0.4
10
7.0
5.0 0
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.4 + 2.5

θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C + 2.0 *APPLIES FOR IC/IB ≤ hFE/2
1.2
+ 1.5 TJ = – 65°C TO + 150°C
1.0
V, VOLTAGE (VOLTS)

+ 1.0

0.8 + 0.5 *θVC FOR VCE(sat)

VBE(sat) @ IC/IB = 10 0
0.6 – 0.5
VBE @ VCE = 2.0 V
0.4 – 1.0
– 1.5 θVB FOR VBE
0.2 VCE(sat) @ IC/IB = 10
– 2.0
0 – 2.5
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

R BE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

103 107
VCE = 30 V VCE = 30 V
102 IC = 10 x ICES
IC, COLLECTOR CURRENT ( µA)

106
TJ = 150°C
101
IC ≈ ICES
105
100 100°C

104 IC = 2 x ICES
10–1 REVERSE FORWARD

10–2 25°C 103 (TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
ICES
10–3 102
– 0.4 – 0.3 – 0.2 – 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 20 40 60 80 100 120 140 160
VBE, BASE–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Collector Cut–Off Region Figure 13. Effects of Base–Emitter Resistance

3–4 Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 
PACKAGE DIMENSIONS

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

CASE 221A–06
TO–220AB
ISSUE Y

Motorola Bipolar Power Transistor Device Data 3–5


 
 
 
 
 
 

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3–6 Motorola Bipolar Power Transistor Device Data

*TIP31A/D*
◊ TIP31A/D
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