24-10-2018

MEL G611 :
IC FABRICATION TECHNOLOGY
Section IX: Ion Implantation
18 (Thu) & 20 (Sat) Oct 2018
BITS Pilani
Hyderabad Campus
Sanket Goel, EEE

Sec VIII, L 22-26: Diffusion

• 27 (Thu), 29 (Sat) Sept; 4 (Thu), 6 (Sat) Oct 2018

• Learning Objectives
o To explore the basic process of dopant diffusion
o Methods to accurately predict dopant profiles.

• Topics covered –
o Diffusion time dependent process
o Diffusion independent process

MEL G611 : IC FABRICATION TECHNOLOGY 2 BITS Pilani, Hyderabad Campus

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Sec IX, L 27 & 28: Ion Implantation

• 18 (Thu) & 20 (Sat) Oct 2018

• Learning Objectives
o To learn ion implantation technology for precise
doping into the silicon.

• Topics to be covered –
o Implant in Si
o High-Energy Implant
o Ultralow Energy Implant
o Ion beam Heating
o Measurement methods

MEL G611 : IC FABRICATION TECHNOLOGY 3 BITS Pilani, Hyderabad Campus

Outline

• Implant in Si
• High-Energy Implant
• Ultralow Energy Implant
• Ion beam Heating
• Measurement methods

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Introduction
• Dopant ions are accelerated to hundreds of thousands of
volts of energy and smashed into a perfect silicon lattice
• Ion implantation provides a very precise means to introduce a
specific dose or number of dopant atoms into the silicon
• Normal dose for CMOS process  1012 to 1016 cm−2, and can
be monitored by increasing implant time or higher beam current
• Original patent  William Shockley in 1954 !!
• Random process

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Distribution of ions

• Distribution of ions implanted into Si crystal at 200 keV

• Heavy ions can not travel as far in the crystal as light ions
• Light ions have a broader distribution than heavy ions

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Distribution of ions: Dose

• # of ions implanted (Q) > 1012 cm-2
• Statistical Distribution
• RP ⇒ average projected range normal to the surface
• ∆RP ⇒ standard deviation or straggle about the range
• CP ⇒ peak concentration where the Gaussian is centered

Common dopants in Si

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Problem
Arsenic is implanted into a lightly doped p-type Si substrate at an
energy of 75 keV. The dose is 1 ×1014 cm−2. What is the peak
electron concentration produced? At 75 keV, RP = 0.05 µm and
∆RP = 0.02 µm

For 75 keV for arsenic, RP = 0.05μm ΔRP = 0.02μm

MEL G611 : IC FABRICATION TECHNOLOGY 8 BITS Pilani, Hyderabad Campus

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Masking Layer for Ion Implantation

• Any layer thick enough to capture the implanted ions can be
used as a masking layer
• Photoresists are often used as a masking layer at room
temperature in CMOS processes!!
• Near the mask, the profile is dominated by the lateral straggle
(𝑅)⇒ very difficult to experimentally measure

o Under the gate of a MOS transistor, ions profile is

dominated by the lateral straggle and
o Subsequent annealing steps determines how far dopant
ions will moves

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Masking Layer Thickness

• Depends on material
o Denser material have better masking properties!
• Thin metal or thick photoresist could be an efficient mask.
• The range and standard deviation are similar for silicon and
silicon dioxide
• Thickness of the mask
should be large enough
that the tail of the
implant profile in the
silicon is at same
specific background
concentration
Dose QP penetrates the mask
of thickness xm
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Masking Process
• The criterion for efficient masking

o C∗(xm )  concentration at
the far side of a mask of
thickness xm
o CB  background
concentration in substrate

o m  indicates that the mask thickness should be equal to

the range plus some multiple m times the standard
deviation in the masking material

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Masking Process

• Now the dose, QP , that

penetrates the mask is

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Tilted Implant
• To get symmetrical
distribution on all devices
o Wafer is often rotated
o Implanted at 4 separate
locations
• To completely avoid
shadowing effect
o Implant must be
performed at zero tilt • Simulation of 50 keV phosphorous
implant at 300 tilt.
angle
• Asymmetric implant distribution
and shadowing

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Deviation from Gaussian Theory

Gaussian distribution in a semi infinite medium

• Implanted Gaussian profile (SD  Rp) has same form as

o Initial delta-function distribution diffused for an effective
time-temperature cycle of Rp = (2Dt)1/2.
• Effect of additional time-temperature cycles on implanted
Gaussian distribution

• Gaussian remains Gaussian and it preserves its shape

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Deviation from Gaussian Theory

• Gaussian remains Gaussian and

it preserves its shape
• Its SD or strangle about the peak
concentration increases with the
diffusion distance
• Experimentally, often only central
(peak) region matches
• Boron distribution is skewed
towards the surface and a
Gaussian profile (dotted) provides
a good fit only near the peak

MEL G611 : IC FABRICATION TECHNOLOGY 15 BITS Pilani, Hyderabad Campus

Deviation from Gaussian Theory

• Greater tendency for light ions (Boron) to backscatter and fill in

the front side of the distribution
• Except range & SD, higher-order moments also needed to
describe implanted profiles
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Moments during Implantation

1. Projected Range

2. Straggle / Standard Deviation

3. Skewness

4. Kurtosis
(sharpness of the peak)

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Si Implant: Role of Crystal Structure

Si crystal looking down various channels

110 axial channels 111 planner channels

100 axial channels With tilt & rotation

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Si Implant: Role of Crystal Structure

Boron implanted (35 keV) into <100> crystalline Si with zero
tilt & rotation

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Implantation Equipment
• Requirement: source of
high density ions (solid /
gas)
• Gas from feed source is
ionized by energetic
electrons boiled off a hot
filament or by plasma
discharge
• Ions extracted by To catch charged
voltage bias on a grid particles in vacuum
and mass analyzed
• Magnetic field is o m  mass of the ion
perpendicular to ion o q  charge on the ion
velocity o v  ion velocity
o R  radius of curvature
o B  magnetic field intensity
MEL G611 : IC FABRICATION TECHNOLOGY 20 BITS Pilani, Hyderabad Campus

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Implantation Equipment
• Ions extracted by voltage bias on a grid and
mass analyzed
• Magnetic field is perpendicular to ion velocity
B = I
  magnet shape

• For fixed magnet design and fixed position of the resolving

aperture in a machine, turning the analyzer, 𝑚 ∝ 𝐼
• Heavy ions isotopes are difficult to separate
• Implant dose is measured by locating the sample at the end of
Faraday cup o I  collected beam current
o A  implant area
o t  integration time
o q  charge on the ion
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Diffusion vs Ion Implantation

Diffusion
Particles are spread through random
motion from higher concentration regions
to regions of lower concentration
Diffusion creates no damage and batch
fabrication is also possible
Limited to solid solubility and it is a high-
temperature process. Shallow junctions
and low dosages are difficult the process
High-temperature process.
Difficult
Large process times
No
Isotropic dopant profile
Ion Implantation
The bombardment of the substrate with
ions, accelerating to higher velocities.
Sometimes damage may occur
Allows to control the precise dose and the
depth
Low-temperature process
Possible through the thin layers of oxides
and nitrides
Short process times
Involves an additional cost for annealing
process.
Anisotropic dopant profile.

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Problem
A process engineer building a NMOS device wants to dope the polysilicon at
the same time as doing the arsenic source/drain diffusion. The source drain
implant dose is 2 × 1015 cm−2 at an energy of 50 keV.
(a) For the above implant conditions, what is the minimum polysilicon thickness
that can be used if the implant is not to affect the channel doping which is 1 ×
1016 cm−3 near the surface? (Assume the gate oxide is negligibly thick
compared to the polysilicon).
(b) Assuming that this polysilicon thickness is actually used, how much of the
implant dose will penetrate the polysilicon mask if the process engineer decides
to change the implant energy to 80 keV?
Given: @50 keV RP = 35nm and ∆R P = 15nm; and @80 keV RP = 55nm and
∆R P = 22.5nm

MEL G611 : IC FABRICATION TECHNOLOGY 23 BITS Pilani, Hyderabad Campus

Solution

MEL G611 : IC FABRICATION TECHNOLOGY 24 BITS Pilani, Hyderabad Campus

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Problem
We want to design an implant step which will implant phosphorus
ions through 50nm of SiO2 into an underlying silicon substrate
such that the peak concentration in the substrate is 1 ×1017 cm−3
and the concentration at the SiO2 /Si interface is 1 ×1015 cm−3.
What energy and dose would you use to achieve these conditions.
Assume that the stopping power of SiO2 is the same as that of
silicon. Neglect channeling effects.

• Thus, the oxide-silicon interface (RP) lies approximately 3ΔRP away from the
peak of the implanted profile.

MEL G611 : IC FABRICATION TECHNOLOGY 25 BITS Pilani, Hyderabad Campus

Solution

• Energy of the phosphorus implant must be at least 30keV to penetrate 50nm.

MEL G611 : IC FABRICATION TECHNOLOGY 26 BITS Pilani, Hyderabad Campus

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Problem
In a particular application, it is important to produce a fairly flat
profile over an extended distance by ion implantation, as indicated
below. One way to do this is to superimpose several implants at
different energies. If phosphorus implants with energies of 0.5RP ,
RP , 2RP are used with a dose of 1 ×1014 cm−2 in the middle peak,
approximately what doses should be used in the adjacent peaks if
the initial peak concentrations are to be the same.

MEL G611 : IC FABRICATION TECHNOLOGY 27 BITS Pilani, Hyderabad Campus

Solution

Empirically, from the implant tables, the range RP and standard deviation ΔRP
scale similarly with energy. Thus, to maintain the same peak concentration
given by

we need to scale the dose Q with ΔRP which empirically increases with RP , so
the doses should be

MEL G611 : IC FABRICATION TECHNOLOGY 28 BITS Pilani, Hyderabad Campus

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Problem
Phosphorus is implanted at 50keV with a dose of 1 ×1014 cm−2.
Calculate the junction depth where the phosphorus meets the
substrate (p-type, 1 ×1015 cm−3) after (a) a 900°C, 3 hour anneal
and (b) a 1200°C, 3 hour anneal.

• Implanted gaussian profile with small additional Dt

• a delta function of dopant introduced near the
surface

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Solution

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Problem
An implant machine for 300 mm wafers is required to have a
throughput of 60 wafers per hour. What beam current is required
in order to implant a source/drain region in a CMOS device with a
dose of 1 ×1015cm−2 ?

MEL G611 : IC FABRICATION TECHNOLOGY 31 BITS Pilani, Hyderabad Campus

Problem
A phosphorus implant is performed into a bare p-type silicon wafer with a
background doping of 1 ×1015 cm−3, at an energy of 50 keV and a dose of 1
×1014 cm−2. After an anneal at 900°C for 10 min, the junction depth is measured
to be 0.25 μm. Calculate the enhancement in the phosphorus diffusion
coefficient that was caused by the implantation damage.

• 50 keV Phosphorus has a range of 70 nm and a standard deviation of 27.5 nm.

• The final junction depth (250 nm) is large compared to the initial RP and ΔRP
• So the proper approach is to consider this to be a delta function of dopant that is
introduced at the surface.
• It will then diffuse as a one-sided Gaussian (approximately) to the final junction depth.
• If the final junction depth were smaller, we would be better using the formula which
takes both the initial ΔRP and the additional 2Dt into consideration
• However, in this particular case, the profile would soon hit the surface of the wafer,
complicating the final solution.

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Solution
The diffusion of phosphorus at 900C, ignoring concentration dependent diffusion is

MEL G611 : IC FABRICATION TECHNOLOGY 33 BITS Pilani, Hyderabad Campus

Sec IX, L 27 & 28: Ion Implantation

• 27 (Thu), 29 (Sat) Sept; 4 (Thu), 6 (Sat) Oct 2018

• Learning Objectives
o To learn ion implantation technology for precise
doping into the silicon.

• Topics to be covered –
o Implant in Si
o High-Energy Implant
o Ultralow Energy Implant
o Ion beam Heating
o Measurement methods

MEL G611 : IC FABRICATION TECHNOLOGY 34 BITS Pilani, Hyderabad Campus

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Sec X, L 29 & 30: Annealing

• 27 (Thu), 29 (Sat) Sept; 4 (Thu), 6 (Sat) Oct 2018

• Learning Objectives
o To explore the basic process of dopant diffusion
o Methods to accurately predict dopant profiles.

• Topics to be covered –
o Diffusion time dependent process
o Diffusion independent process

MEL G611 : IC FABRICATION TECHNOLOGY 35 BITS Pilani, Hyderabad Campus

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