2SK2596

Silicon N-Channel MOS FET

UHF Power Amplifier

ADE-208-1367 (Z)
1st. Edition
Mar. 2001

Features

• High power output, High gain, High efficiency

PG = 12.2dB, Pout = 30.2dBm, ηD = 45 %min. (f = 836.5MHz)
• Compact package capable of surface mounting

Outline

UPAK

1
2
3

4
D
1. Gate
G 2. Source
3. Drain
4. Source

This Device is sensitive to Elector Static Discharge.

An Adequate handling procedure is requested.
2SK2596

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage VDSS 17 V
Gate to source voltage VGSS ±10 V
Drain current ID 0.4 A
1
Drain peak current I D(pulse)* 1 A
2
Channel dissipation Pch* 3 W
Channel temperature Tch 150 °C
Storage temperature Tstg –45 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min. Typ Max. Unit Test Conditions
Zero gate voltage drain I DSS — — 10 µA VDS = 12 V, VGS = 0
current
Gate to source leak current I GSS — — ±5.0 µA VGS = ±10V, VDS = 0
Gate to source cutoff voltage VGS(off) 0.4 — 1.1 V I D = 2mA, VDS = 12V
Input capacitance Ciss — 22 — pF VGS = 5V, VDS = 0
f = 1MHz
Output capacitance Coss — 10.5 — pF VDS = 12V, VGS = 0
f = 1MHz
Output Power Pout 30.2 31.46 — dBm VDS = 12V
f = 836.5MHz
Pin = 18dBm
Drain Rational ηD 45 55 — % VDS = 12V
Pout = 30.2dBm
f = 836.5MHz
Pin = 18dBm

2
 2SK2596

Main Characteristics

Maximum Channel Power

Dissipation Curve Typical Output Characteristics
4 3.0
Pch (W)

Pulse test V
10 8V
2.5

I D (A)
3
2.0 6V
Channel Power Dissipation

5V
2 1.5

Drain Current
4V
1.0
1 3V
0.5
V GS = 2 V
0 50 100 150 200 0 2 4 6 8 10
Case Temperature Tc (°C) Drain to Source Voltage V DS (V)

Forward Transfer Admittance

Typical Transfer Characteristics vs. Drain Current
1.0 1.0
Forward Transfer Admittance |y fs | (S)

Tc = –25°C 0.5
0.8 Tc = –25°C 25°C
(A)

25°C
75°C 0.2
ID

0.6
0.1
Drain Current

75°C
0.4
0.05

0.2 V DS = 12 V 0.02 V DS = 12 V
Pulse Test Pulse Test
0.01
0 1 2 3 4 5 0.01 0.02 0.05 0.1 0.2 0.5 1
Gate to Source Voltage V GS (V) Drain Current I D (A)

3
2SK2596

Drain to Source Saturation Voltage Gate to Source Cutoff Voltage vs.

vs. Drain Current Ambient Temperature
10 1.2
VDS(sat) (V)
Drain to Source Saturation Voltage

Gate to Source Cutoff Voltage

VGS(off) (V)
1.0
2 25°C
10 mA
1 Tc = –25°C 0.8
0.5 1 mA
75°C 0.6 ID=
0.2 0.1 m
A
0.1 0.4
0.05
V DS = 12 V 0.2
0.02 Pulse Test V DS = 12 V
0.01 0
0.01 0.02 0.05 0.1 0.2 0.5 1 –25 0 25 50 75 100 125
Drain Current I D (A) Ambient Temperature Ta (°C)

Input Capacitance vs. Output Capacitance vs.

Gate to Source Voltage Drain to Source Voltage
24 100
Output Capacitance Coss (pF)
Input Capacitance Ciss (pF)

50
22

20
20
10

18
5

16 V GS = 0
V DS = 0 2
f = 1 MHz f = 1 MHz
14 1
–10 –6 –2 2 6 10 0.1 0.2 0.5 1 2 5 10 20
Gate to Source Voltage VGS (V) Drain to Source V DS (V)

4
 2SK2596

Reverse Transfer Capacitance vs. Output Power, Drain Rational

Gate to Source Votage vs. Input Power
Reverse Transfer Capacitance Crss (pF)

100 2.5 100

V DS = 12 V
50 I DO = 100 mA
2.0 f = 836.5MHz 80

Output Power Po (W)

Drain Rational η D (%)

20 Po
1.5 60
10 ηD

1.0 40
5

0.5 20
2 V GS = 0
f = 1 MHz
1 0
0.1 0.2 0.5 1 2 5 10 20 0 20 40 60 80 100
Gate to Source Voltege VGS (V) Input power Pin (W)

5
2SK2596

Package Dimensions

As of January, 2001
Unit: mm

4.5 ± 0.1
1.5 ± 0.1
1.8 Max 0.44 Max (1.5)
0.4
2.5 ± 0.1
φ1 4.25 Max

(2.5)
0.53 Max

(0.2)
(0.4)
0.48 Max 0.44 Max
0.8 Min

1.5 1.5
3.0

Hitachi Code UPAK

JEDEC —
EIAJ Conforms
Mass (reference value) 0.050 g

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 2SK2596

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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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