Scribd Logo
Upload

Welcome to Scribd!

  • Nte 133

    Uploaded by

    julio quatrini
    2 views2 pages
    This document provides specifications for an N-channel JFET silicon transistor in a TO106 type package for general purpose audio frequency amplifier applications. It lists the absolute maximum ratings and electrical characteristics, including maximum voltages and currents, operating temperature range, and key transistor metrics like gate-source cutoff voltage and forward transfer admittance. The transistor has a drain-source voltage rating of 25V, gate-source cutoff voltage below -6.5V, and forward transfer admittance between 1000-7500 micro-mhos.

    Original Description:

    Original Title

    nte133

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    This document provides specifications for an N-channel JFET silicon transistor in a TO106 type package for general purpose audio frequency amplifier applications. It lists the absolute maximum ratings and electrical characteristics, including maximum voltages and currents, operating temperature range, and key transistor metrics like gate-source cutoff voltage and forward transfer admittance. The transistor has a drain-source voltage rating of 25V, gate-source cutoff voltage below -6.5V, and forward transfer admittance between 1000-7500 micro-mhos.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    2 views2 pages

    Nte 133

    Uploaded by

    julio quatrini
    This document provides specifications for an N-channel JFET silicon transistor in a TO106 type package for general purpose audio frequency amplifier applications. It lists the absolute maximum ratings and electrical characteristics, including maximum voltages and currents, operating temperature range, and key transistor metrics like gate-source cutoff voltage and forward transfer admittance. The transistor has a drain-source voltage rating of 25V, gate-source cutoff voltage below -6.5V, and forward transfer admittance between 1000-7500 micro-mhos.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 2

    NTE133

    N−Channel JFET Silicon Transistor


    General Purpose AF Amplifier
    TO106 Type Package

    Absolute Maximum Ratings: (TA = +255C unless otherwise specified)


    Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
    Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
    Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25V
    Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
    Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
    Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/5C
    Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
    Lead Temperature (During Soldering, 1/16” from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +2605C

    Electrical Characteristics: (TA = +255C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    Gate−Source Breakdown Voltage V(BR)GSS IG = 15 A, VDS = 0 −25 − − V
    Gate Reverse Current IGSS VGS = 20V, VDS = 0 − − −1 nA
    VGS = 20V, VDS = 0, TA = +1505C − − −1 5A
    Gate−Source Cutoff Voltage VGS(off) ID = 15 A, VDS = 15V − − −6.5 V
    Gate−Source Voltage VGS ID = 505 A, VDS = 15V −0.4 − −6.0 V
    Zero−Gate−Voltage Drain Current IDSS VDS = 15V, VGS = 0 0.5 − 15 mA
    Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 1000 − 7500 5 mho
    Rev. 10−13
    D
    G
    S

    .207 (5.28) Dia

    .060
    (1.52) .180
    Min (4.57)

    Seating .500
    Plane (12.7)
    Min

    .018 (0.45)

    .100 (2.54) Dia

    Drain

    Source Gate

    You might also like