VDS

650 V

C3M0045065K ID @ 25˚C 49 A

RDS(on) 45 mΩ
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features Package

• C3MTM SiC MOSFET technology

• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant

Benefits
Drain
(Pin 1, TAB)
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency
Gate
(Pin 4)

Driver Power
Applications Source
(Pin 3)
Source
(Pin 2)

• EV chargers
• Server & Telecom PSU
• UPS
Part Number Package Marking
• Solar inverters
• SMPS
C3M0045065K TO 247-4 C3M0045065K
• DC/DC converters

Maximum Ratings

Symbol Parameter Value Unit Note

VDSS Drain - Source Voltage, TC = 25 ˚C 650 V

VGS Gate - Source voltage (Under transient events < 100 ns) -8/+19 V Fig. 29

Continuous Drain Current, VGS = 15 V, TC = 25˚C 49

ID A Fig. 19
Continuous Drain Current, VGS = 15 V, TC = 100˚C 35

ID(pulse) Pulsed Drain Current, Pulse width tP limited by Tjmax 132 A

PD Power Dissipation, TC=25˚C, TJ = 175 ˚C 176 W Fig. 20

-40 to
TJ , Tstg Operating Junction and Storage Temperature
+175
˚C

TL Solder Temperature, 1.6mm (0.063”) from case for 10s 260 ˚C

1 Nm
Md Mounting Torque, (M3 or 6-32 screw)
8.8 lbf-in

1 C3M0045065K Rev 1, 12-2020

Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 650 V VGS = 0 V, ID = 100 μA
VGSon Gate-Source Recommended Turn-On Voltage 15 V
Static Fig. 29
VGSoff Gate-Source Recommended Turn-Off Voltage -4 V
1.8 2.6 3.6 V VDS = VGS, ID = 4.84 mA
VGS(th) Gate Threshold Voltage Fig. 11
2.2 V VDS = VGS, ID = 4.84 mA, TJ = 175ºC
IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 650 V, VGS = 0 V
IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V
45 60 VGS = 15 V, ID = 17.6 A Fig. 4,
RDS(on) Drain-Source On-State Resistance mΩ
61 VGS = 15 V, ID = 17.6 A, TJ = 175ºC 5,6

12 VDS= 20 V, IDS= 17.6 A

gfs Transconductance S Fig. 7
11 VDS= 20 V, IDS= 17.6 A, TJ = 175ºC
Ciss Input Capacitance 1621
VGS = 0 V, VDS = 0V to 600 V
Fig. 17,
Coss Output Capacitance 101 F = 1 Mhz 18
Crss Reverse Transfer Capacitance 8 pF VAC = 25 mV

Co(er) Effective Output Capacitance (Energy Related) 126 Note: 1

VGS = 0 V, VDS = 0V to 400 V
Co(tr) Effective Output Capacitance (Time Related) 178 Note: 1

Eoss Coss Stored Energy 20 μJ VDS = 600 V, F = 1 Mhz Fig. 16

EON Turn-On Switching Energy (Body Diode) 57 VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A,
μJ RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC Fig. 25
EOFF Turn Off Switching Energy (Body Diode) 14 FWD = Internal Body Diode of MOSFET
EON Turn-On Switching Energy (External Diode) 44 VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A,
μJ RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC Fig. 25
EOFF Turn Off Switching Energy (External Diode) 14
FWD = External SiC DIODE
td(on) Turn-On Delay Time 9
VDD = 400 V, VGS = -4 V/15 V
tr Rise Time 12
ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH
ns Fig. 26
td(off) Turn-Off Delay Time 18 Timing relative to VDS
Inductive load
tf Fall Time 6
RG(int) Internal Gate Resistance 3 Ω f = 1 MHz, VAC = 25 mV
Qgs Gate to Source Charge 21
VDS = 400 V, VGS = -4 V/15 V
Qgd Gate to Drain Charge 18 nC ID = 17.6 A Fig. 12
Qg Total Gate Charge 63 Per IEC60747-8-4 pg 21

Note (1): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V
Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V

2 C3M0045065K Rev 1, 12-2020

Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter Typ. Max. Unit Test Conditions Note

4.8 V VGS = -4 V, ISD = 8.8 A, TJ = 25 °C

Fig. 8,
VSD Diode Forward Voltage 9, 10
4.2 V VGS = -4 V, ISD = 8.8 A, TJ = 175 °C

IS Continuous Diode Forward Current 29 A VGS = -4 V, TC = 25˚C

IS, pulse Diode pulse Current 132 A VGS = -4 V, pulse width tP limited by Tjmax

trr Reverse Recover time 13 ns

VGS = -4 V, ISD = 17.6 A, VR = 400 V
Qrr Reverse Recovery Charge 247 nC
dif/dt = 5215 A/µs, TJ = 175 °C
Irrm Peak Reverse Recovery Current 36 A

trr Reverse Recover time 18 ns

VGS = -4 V, ISD = 17.6 A, VR = 400 V
Qrr Reverse Recovery Charge 171 nC
dif/dt = 1775 A/µs, TJ = 175 °C
Irrm Peak Reverse Recovery Current 16 A

Thermal Characteristics

Symbol Parameter Typ. Unit Test Conditions Note

RθJC Thermal Resistance from Junction to Case 0.85
°C/W Fig. 21
RθJA Thermal Resistance From Junction to Ambient 40

3 C3M0045065K Rev 1, 12-2020

Typical Performance

100 100
Conditions: VGS = 15V VGS = 13V Conditions: VGS = 15V VGS = 13V
Tj = -40 °C Tj = 25 °C
tp = < 200 µs tp = < 200 µs
80 80
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = 11V

60 60
VGS = 11V

40 40
VGS = 9V

VGS = 9V
20 20
VGS = 7V
VGS = 7V

0 0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 1. Output Characteristics TJ = -40 ºC Figure 2. Output Characteristics TJ = 25 ºC

100 2.0
Conditions: VGS = 15V Conditions:
Tj = 175 °C 1.8 IDS = 17.6 A
VGS = 13V VGS = 11V
tp = < 200 µs VGS = 15 V
tp < 200 µs
80 1.6
Drain-Source Current, IDS (A)

On Resistance, RDS On (P.U.)

1.4

60 1.2
VGS = 9V

1.0

40 0.8

0.6
VGS = 7V
20 0.4

0.2

0 0.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Junction Temperature, Tvj (°C)

Figure 3. Output Characteristics TJ = 175 ºC Figure 4. Normalized On-Resistance vs. Temperature

100 160
Conditions: Conditions:
90 VGS = 15 V IDS = 17.6 A
tp < 200 µs 140 tp < 200 µs
80
Tj = 175 °C 120
On Resistance, RDS On (mOhms)

On Resistance, RDS On (mOhms)

70
Tj = -40 °C 100
60
VGS = 11 V
50 80
Tj = 25 °C
40 VGS = 13 V
60
30
40 VGS = 15 V
20
20
10

0 0
0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Current, IDS (A) Junction Temperature, Tj (°C)

Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature

For Various Temperatures For Various Gate Voltage

4 C3M0045065K Rev 1, 12-2020

Typical Performance

100 -10 -8 -6 -4 -2 0
Conditions:
0
90 VDS = 20 V
tp < 200 µs
VGS = -4 V
80

Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

-20
70
TJ = 175 °C VGS = 0 V
60
VGS = -2 V
-40
50
TJ = -40 °C
TJ = 25 °C
40

30 -60

20

10 -80
Conditions:
0 Tj = -40°C
tp < 200 µs
2 3 4 5 6 7 8 9 10 11 12
-100
Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)

Figure 7. Transfer Characteristic for

Figure 8. Body Diode Characteristic at -40 ºC
Various Junction Temperatures
-10 -8 -6 -4 -2 0 -10 -8 -6 -4 -2 0
0 0
VGS = -4 V
VGS = -4 V
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = 0 V
-20 -20
VGS = 0 V

VGS = -2 V VGS = -2 V
-40 -40

-60 -60

-80 -80
Conditions: Conditions:
Tj = 25°C Tj = 175°C
tp < 200 µs tp < 200 µs
-100 -100
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 175 ºC

4.0 16
Conditons Conditions:
VGS = VDS IDS = 17.6 A
3.5 IGS = 50 mA
IDS = 4.84 mA
12 VDS = 400 V
3.0 TJ = 25 °C
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)

2.5
8

2.0

1.5 4

1.0
0
0.5

0.0 -4
-50 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70
Junction Temperature TJ (°C) Gate Charge, QG (nC)

Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics

5 C3M0045065K Rev 1, 12-2020

Typical Performance

-10 -8 -6 -4 -2 0 -10 -8 -6 -4 -2 0
0 0

VGS = 0 V
VGS = 0 V
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

-20 -20
VGS = 5 V VGS = 5 V

-40 -40
VGS = 10 V
VGS = 10 V
VGS = 15 V
-60 -60
VGS = 15 V

-80 -80
Conditions: Conditions:
Tj = -40 °C Tj = 25 °C
tp < 200 µs tp < 200 µs
-100 -100
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

Figure 13. 3rd Quadrant Characteristic at -40 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC

-10 -8 -6 -4 -2 0 25
0
VGS = 0 V
20
Drain-Source Current, IDS (A)

-20
Stored Energy, EOSS (µJ)

VGS = 5 V 15
-40
VGS = 10 V
10
VGS = 15 V
-60

-80
Conditions:
Tj = 175 °C 0
tp < 200 µs
0 100 200 300 400 500 600 700
-100
Drain-Source Voltage VDS (V) Drain to Source Voltage, VDS (V)

Figure 15. 3rd Quadrant Characteristic at 175 ºC Figure 16. Output Capacitor Stored Energy

10000 10000 Conditions:

Conditions: TJ = 25 °C
TJ = 25 °C VAC = 25 mV
VAC = 25 mV f = 1 MHz
Ciss Ciss
f = 1 MHz
1000 1000
Capacitance (pF)

Capacitance (pF)

Coss
Coss
100 100

Crss
Crss
10 10

1 1
0 50 100 150 200 0 100 200 300 400 500 600
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 200V) Voltage (0 - 650V)

6 C3M0045065K Rev 1, 12-2020

Typical Performance

50 180
Conditions: Conditions:
45 TJ ≤ 175 °C 160 TJ ≤ 175 °C
Drain-Source Continous Current, IDS (DC) (A)

Maximum Dissipated Power, Ptot (W)

40
140
35
120
30
100
25
80
20
60
15

10 40

5 20

0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Case Temperature, TC (°C) Case Temperature, TC (°C)

Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature Case Temperature

1
100.00
0.5
Junction To Case Impedance, ZthJC (oC/W)

0.3 Limited by RDS On

1 µs
Drain-Source Current, IDS (A)

0.1 10.00
100E-3 10 µs

0.05
100 µs

0.02
1.00
0.01 1 ms

10E-3 100 ms
SinglePulse
0.10
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.01
1E-3
0.1 1 10 100 1000
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Time, tp (s) Drain-Source Voltage, VDS (V)

Figure 21. Transient Thermal Impedance

Figure 22. Safe Operating Area
(Junction - Case)

140 300
Conditions: Conditions:
ETotal
TJ = 25 °C TJ = 25 °C
ETotal
120 VDD = 400 V VDD = 400 V
RG(ext) = 2.5 Ω
250
IDS = 17.6 A
VGS = -4/+15 V VGS = -4/+15 V
100 FWD = C3M0045065K FWD = C3M0045065K
L = 99 μH 200 L = 99 μH
Switching Loss (uJ)

EOn
Switching Loss (uJ)

80 EOn
150
60

100
40 EOff
EOff

50
20

0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25
Drain to Source Current, IDS (A) External Gate Resistor RG(ext) (Ohms)

Figure 23. Clamped Inductive Switching Energy vs.

Figure 24. Clamped Inductive Switching Energy vs. RG(ext)
Drain Current (VDD = 400V)

7 C3M0045065K Rev 1, 12-2020

Typical Performance

120 70
Conditions: Conditions:
IDS = 17.6 A TJ = 25 °C
VDD = 400 V 60 VDD = 400 V
100 RG(ext) = 2.5 Ω IDS = 17.6 A
VGS = -4/+15 V td(off)
VGS = -4/+15 V
L = 99 μH 50 FWD = C3M0045065K

Switching Times (ns)

80 FWD = C3M0045065K
FWD = C4D20120A
Switching Loss (uJ)

ETotal
40 tr
ETotal with Schottky
60
EOn
30 td(on)

40 EOn with Schottky

20 tf

20 EOff with Schottky

10
EOff

0 0
0 25 50 75 100 125 150 175 200 0 5 10 15 20 25
Junction Temperature, TJ (°C) External Gate Resistor RG(ext) (Ohms)

Figure 25. Clamped Inductive Switching Energy vs. Figure 26. Switching Times vs. RG(ext)
Temperature

8 C3M0045065K Rev 1, 12-2020

Test Circuit Schematic

D1 C4D10120A
C4D20120A
L=156
LL=
L==135
57.6uH
µH
99 µH
uH 10A,1200V
20A, 1200V
SiC Schottky
SiC Schottky
VDC CDC=42.3 uF

Q2
RG D.U.T
D.U.T
C3M0060065K
C3M0015065K
C3M0045065K
C2M0080120D

Figure 27. Clamped Inductive Switching

Waveform Test Circuit

Q1
RG D.U.T
LL
==57.6
99 µH
L= 135uHuH
µH
L=156 C3M0060065K
C3M0015065K
C3M0045065K
D.U.T
VGS = --4V
5V C2M0080120D
VDC CDC=42.3 uF

Q2
RG C3M0015065K
C3M0045065K
C3M0060065K
C2M0080120D

Figure 28. Body Diode Recovery Test Circuit

19 V

15 V

VGSon VGS

0V
VGSoff
-4 V

t < 100ns

-8 V

3 CREE CONFIDENTIAL & PROPRIETARY © 2018 Cree, Inc. All rights reserved. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc.

Figure 29. VGS Waveform Example

9 C3M0045065K Rev 1, 12-2020

Package Dimensions
Package TO-247-4L

10 C3M0045065K Rev 1, 12-2020

Package Dimensions

Package TO-247-4L

NOTE ;
1. ALL METAL SURFACES: TIN PLATED, EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
4. ‘N’ IS THE NUMBER OF TERMINAL POSITIONS

11 C3M0045065K Rev 1, 12-2020

Notes

• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.

• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.

Related Links

• SPICE Models: http://wolfspeed.com/power/tools-and-support

• SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support

• SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support

Cree, Inc.
Copyright © 2020 Cree, Inc. All rights reserved. 4600 Silicon Drive
Durham, NC 27703
The information in this document is subject to change without notice. USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. www.wolfspeed.com/power

12 C3M0045065K Rev 1, 12-2020