Wolfspeed C3M0040120K Data Sheet

C3M0040120K
1200V 40mohm Silicon Carbide Power MOSFET

N-Channel Enhancement Mode
Tab Drain
Drain
(Pin 1, TAB)
Features
• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
Gate
(Pin 4)
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
Driver
Source
Power
Source
• Fast intrinsic diode with low reverse recovery (Qrr) 1 2 3 4 (Pin 3) (Pin 2)
• Halogen free, RoHS compliant

D S S G
Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name
change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with
either the Cree name and/or logo or the Wolfspeed name and/or logo.
Part Number Package Marking
C3M0040120K TO-247-4 C3M0040120K
Applications Benefits
• Solar inverters • Reduce switching losses and minimize gate ringing
• EV motor drive • Higher system efficiency
• High voltage DC/DC converters • Reduce cooling requirements
• Switched mode power supplies • Increase power density
• Load switch • Increase system switching frequency
Maximum Ratings (TC = 25ºC unless otherwise specified)

Parameter Symbol Value Unit Test Conditions Note
Drain-Source Voltage VDS max 1200 VGS = 0 V, ID = 100 μA
Gate-Source Voltage (dynamic)1 VGS max -8/+19 V AC (ƒ >1 Hz) Note 1
Gate - Source Voltage (static)2 VGSop -4/+15 Static
66 VGS = 15 V, TC = 25ºC Fig. 19

Continuous Drain Current ID
48 VGS = 15 V, TC = 100ºC Note 2
A
Fig. 22
Pulsed Drain Current IDM 223 Pulse width tP limited by Tj max
Note 2
Power Dissipation2 PD 326 W TC = 25ºC, TJ = 175ºC Fig. 20
Operating Junction and Storage Temperature TJ, Tstg -40 to +175

°C
Solder Temperature TS 260 According to JEDEC J-STD-020
1 N-m
Mounting Torque MS (M3 or 6-32 screw)
8.8 lbf-in
Note:
1
Recommended turn-off/turn on gate voltage VGS max = -4V...0V/+15V
2
Verified by design
Rev. 02, August 2023 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power
© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc.
The information in this document is subject to change without notice.
C3M0040120K 2
Electrical Characteristics (TC = 25ºC unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Conditions Note
Drain-Source Breakdown Voltage V(BR)DSS 1200 — — VGS = 0 V, ID = 100 μA
Gate Threshold Voltage 1.8 2.7 3.6 V VDS = VGS, ID = 9.2 mA, TJ=25°C Fig. 11
VGS(th)
Gate Threshold Voltage — 2.2 — VDS = VGS, ID = 9.2 mA, TJ=175°C Fig. 11
Zero Gate Voltage Drain Current IDSS — 1 50 µA VDS = 1200 V, VGS = 0 V
Gate-Source Leakage Current IGSS — 10 250 nA VGS = 15 V, VDS = 0 V
— 40 53.5 VGS = 15 V, ID = 33.3 A Fig.
Drain-Source On-State Resistance RDS(on) mΩ
— 68 — VGS = 15 V, ID = 33.3 A, TJ = 175°C 4, 5, 6
21 VDS = 20 V, IDS = 33.3 A

Transconductance gfs — — S Fig. 7
20 VDS = 20 V, IDS = 33.3 A, TJ = 175°C
Input Capacitance Ciss — 2900 —
VGS = 0 V, VDS = 1000 V Fig.
Output Capacitance Coss — 103 — pF
ƒ = 100 khz 17, 18
Reverse Transfer Capacitance Crss — 5 — VAC = 25 mV
Coss Stored Energy Eoss — 60 — µJ Fig. 16
Turn-On Switching Energy (SiC Diode FWD) Eon — 243 —
Turn Off Switching Energy (SiC Diode FWD) Eoff — 104 — VDS = 800 V, VGS = -4 V/15 V,
Fig.
µJ ID = 33.3 A, RG(ext) = 2.5 Ω,
Turn-On Switching Energy (Body Diode FWD) Eon — 611 — 26
L= 99 μH, TJ = 175ºC
Turn-Off Switching Energy (Body Diode FWD) Eoff — 99 —
Turn-On Delay Time td(on) — 13 — VDD = 800 V, VGS = -4 V/15 V
Rise Time tr — 17 — ID = 33.3 A, RG(ext) = 2.5 Ω,
ns L= 99 μH Fig. 27
Turn-Off Delay Time td(off) — 23 — Timing relative to VDS
Fall Time tf — 9 — Inductive load
Internal Gate Resistance RG(int) — 3.5 — Ω ƒ = 1 MHz, VAC = 25 mV

Effective Output Capacitance (Energy Related) CO(er) — 127 —
pF VGS= 0V, VDS= 0...800V Note 3
Effective Output Capacitance (Time Related) Co(tr) — 197 —
Gate to Source Charge Qgs — 34 —
VDS = 800 V, VGS = -4 V/15 V
Gate to Drain Charge Qgd — 28 — nC ID = 33.3 A Fig. 12
Per IEC60747-8-4 pg 21
Total Gate Charge Qg — 99 —
Note:
3
CO(er), a lumped capacitance that gives the same stored energy as Coss while Vds is rising from 0 to 800V
Co(tr), a lumped capacitance that gives the same charging time as Coss while Vds is rising from 0 to 800V
C3M0040120K 3
Reverse Diode Characteristics (TC = 25ºC unless otherwise specified)
Parameter Symbol Typ. Max. Unit Test Conditions Notes

5.5 — VGS = -4 V, ISD = 20 A, TJ = 25°C Fig.
Diode Forward Voltage VSD V
4.9 — VGS = -4 V, ISD = 20 A, TJ = 175°C 8, 9, 10
Continuous Diode Forward Current IS — 51 VGS = -4 V, TJ = 25°C

A VGS = -4 V, pulse width tP limited
Diode Pulse Current ISM — 223 by Tj max
Reverse Recovery Time trr 17 — ns

VGS = -4 V, ISD = 33.3 A, VR = 800 V
Reverse Recovery Charge Qrr 850 — nC TJ = 175°C, diF/dt = 7725 A/µs,
TJ = 175°C
Peak Reverse Recovery Current IRRM 79 — A
Reverse Recovery Time trr 33 — ns

VGS = -4 V, ISD = 33.3 A, VR = 800 V
Reverse Recovery Charge Qrr 691 — nC TJ = 175°C, diF/dt = 2325 A/µs,
TJ = 175°C
Peak Reverse Recovery Current IRRM 30 — A
Thermal Characteristics
Parameter Symbol Typ Unit Note

Thermal Resistance from Junction to Case RθJC 0.46 °C/W Fig. 21
C3M0040120K 4
Typical Performance
120 120
Conditions: VGS = 15V VGS = 13V
Conditions: VGS = 15V VGS = 13V
Tj = -40 °C Tj = 25 °C
tp = < 200 µs tp = < 200 µs
100 100
VGS = 11V
Drain-Source Current, IDS (A)

80 80
VGS = 11V
60 60
VGS = 9V
40 40
VGS = 9V
20 20
VGS = 7V
VGS = 7V
0 0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -40ºC Figure 2. Output Characteristics TJ = 25ºC
120 2.0
Conditions: Conditions:
Tj = 175 °C VGS = 15V 1.8 IDS = 33.3 A
tp = < 200 µs VGS = 15 V
100 VGS = 11V
VGS = 13V 1.6 tp < 200 µs
On Resistance, RDS On (P.U.)
1.4
80
VGS = 9V 1.2
60 1.0
0.8
40
VGS = 7V
0.6
0.4
20
0.2
0 0.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Junction Temperature, Tvj (°C)
Figure 3. Output Characteristics TJ = 175ºC Figure 4. Normalized On-Resistance vs. Temperature
100 120
90 VGS = 15 V IDS = 33.3 A
tp < 200 µs tp < 200 µs
100
80 Tj = 175 °C
On Resistance, RDS On (mOhms)
On Resistance, RDS On (mOhms)
70
80
60 VGS = 11 V
50 Tj = -40 °C 60
VGS = 13 V
40
Tj = 25 °C
40
30 VGS = 15 V
20
20
10
0 0
0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Current, IDS (A) Junction Temperature, Tj (°C)
Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature

For Various Temperatures For Various Gate Voltage
C3M0040120K 5
Typical Performance
160 -10 -8 -6 -4 -2 0
Conditions: 0
VDS = 20 V
140 tp < 200 µs
-20

120
TJ = 175 °C VGS = -4 V
100 VGS = 0 V
-40
TJ = 25 °C
80 VGS = -2 V
TJ = -40 °C
-60
60
40 -80
20
Conditions:
-100
0 Tj = -40°C
0 3 6 9 12 15 tp < 200 µs
-120
Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)
Figure 7. Transfer Characteristic for Figure 8. Body Diode Characteristic at -40ºC

Various Junction Temperatures
-10 -8 -6 -4 -2 0 -10 -8 -6 -4 -2 0
0 0
-20 -20
VGS = -4 V
VGS = 0 V VGS = -4 V
-40 -40
VGS = 0 V
VGS = -2 V
VGS = -2 V
-60 -60
-80 -80
Conditions:
-100 Conditions:
-100
Tj = 25°C Tj = 175°C
tp < 200 µs tp < 200 µs
-120 -120
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25ºC Figure 10. Body Diode Characteristic at 175ºC
4.0 16
Conditons Conditions:
VGS = VDS IDS = 33.3 A
3.5 IGS = 50 mA
IDS = 9.2 mA
12 VDS = 800 V
3.0 TJ = 25 °C
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)
2.5
8
2.0
1.5 4
1.0
0
0.5
0.0 -4
-50 -25 0 25 50 75 100 125 150 175 0 20 40 60 80 100
Junction Temperature TJ (°C) Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
C3M0040120K 6
Typical Performance
-10 -8 -6 -4 -2 0 -10 -8 -6 -4 -2 0
0 0
VGS = 0 V

-20 -20
VGS = 5 V VGS = 0 V
VGS = 5 V
-40 -40
VGS = 10 V VGS = 10 V
-60 -60
VGS = 15 V
VGS = 15 V
-80 -80
Conditions: -100 Conditions: -100

Tj = -40 °C Tj = 25 °C
tp < 200 µs tp < 200 µs
-120 -120
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -40ºC Figure 14. 3rd Quadrant Characteristic at 25ºC
-10 -8 -6 -4 -2 0 100
0
80
-20
VGS = 0 V
Stored Energy, EOSS (µJ)
-40 60
VGS = 5 V
VGS = 10 V
-60
VGS = 15 V 40
-80
20
-100
Conditions:
Tj = 175 °C 0
tp < 200 µs 0 200 400 600 800 1000 1200
-120
Drain-Source Voltage VDS (V) Drain to Source Voltage, VDS (V)
Figure 15. 3rd Quadrant Characteristic at 175ºC Figure 16. Output Capacitor Stored Energy
100000 100000
TJ = 25 °C TJ = 25 °C
VAC = 25 mV VAC = 25 mV
f = 100 kHz f = 100 kHz
10000 10000
Ciss Ciss
Capacitance (pF)
Capacitance (pF)
1000 1000
Coss
Coss
100 100
Crss
10 10 Crss
1 1
0 50 100 150 200 0 200 400 600 800 1000 1200
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 200 V) Voltage (0 - 1200 V)
C3M0040120K 7
Typical Performance
70 350
TJ ≤ 175 °C TJ ≤ 175 °C
Drain-Source Continous Current, IDS (DC) (A)
60 300
Maximum Dissipated Power, Ptot (W)

50 250
40 200
30 150
20 100
10 50
0 0
-55 -30 -5 20 45 70 95 120 145 170 -50 -25 0 25 50 75 100 125 150 175
Case Temperature, TC (°C) Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature Case Temperature
1
(o(ºC/W)
100.00
C/W)
0.5
Limited by RDS On 1 µs
th(JC)
0.3
Junction To Case Impedance, ZthJC
100E-3 10.00 10 µs
0.1
100 µs
0.05
1.00
1 ms
0.02
0.01
10E-3 100 ms
0.10
SinglePulse Conditions:
TC = 25 °C
D = 0,
Parameter: tp
1E-3 0.01
0.1 1 10 100 1000
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Time, tp (s) Drain-Source Voltage, VDS (V)
Figure 21. Transient Thermal Impedance Figure 22. Safe Operating Area
(Junction - Case)
700 1000
Conditions: Conditions: ETotal
TJ = 25 °C 900 TJ = 25 °C
600 VDD = 600 V ETotal VDD = 800 V
RG(ext) = 2.5 Ω 800 RG(ext) = 2.5 Ω
VGS = -4/+15 V VGS = -4/+15 V
500 FWD = C3M0040120K FWD = C3M0040120K Eon
700 On
L = 99 μH L = 99 μH
Switching Loss (uJ)
Switching Loss (uJ)
600
400 EOn
500
300
400
300 Eoff
200 EOff
Off
200
100
100
0 0
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Drain to Source Current, IDS (A) Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600 V) Drain Current (VDD = 800 V)
C3M0040120K 8
Typical Performance
2000 1000
1800 TJ = 25 °C 900 IDS = 33.3 A
VDD = 800 V ETotal VDD = 800 V
1600 IDS = 33.3 A 800 RG(ext) = 2.5 Ω
VGS = -4/+15 V VGS = -4/+15 V
L = 99 μH ETotal
1400 FWD = C3M0040120K 700
L = 99 μH FWD = C3M0040120K
FWD = C4D20120A EOn
Switching Loss (uJ)
Switching Loss (uJ)

1200 EOn 600
1000 500
800 400 ETotal with Schottky
600 300 EOn with Schottky

EOff
400 200
EOff with Schottky
200 100
EOff
0 0
0 5 10 15 20 25 0 25 50 75 100 125 150 175 200
External Gate Resistor,RG(ext)
RG(ext) (Ohms)
(Ohms) Junction Temperature, TJ (°C)
Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Figure 26. Clamped Inductive Switching Energy vs. Temperature
100
Conditions:
90 TJ = 25 °C
VDD = 800 V td(off)
80 IDS = 33.3 A
VGS = -4/+15 V
70 FWD = C3M0040120K
td(on)
Switching Times (ns)
60
50
tr
40
30 tf
20
10
0
0 5 10 15 20 25
External Gate Resistor,RG(ext) (Ohms)
RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext) Figure 28. Switching Times Definition
C3M0040120K 9
Test Circuit Schematic
RG Q1
L
VGS= - 4 V
KS
VDC
CDC
Q2
RG
KS
Figure 29. Clamped Inductive Switching Waveform Test Circuit
Note:
Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
C3M0040120K 10
Package Dimensions – Package TO-247-4L
4 3 2 1
PACKAGE BURR LOCATION
E
P 0.64 M A C B
12.70 A E1
A B E4
E3
F 6.35
A2 F
D2
W
S
Q
E2
D
D1
(3) 7.18
5
8.38
1 2 3 4
E POLISH
0.1
b5 E
L2
W
L1
C
b8
b7
L
A1
e1 c
e b1
D 4x b 2x b3 D
0.25 M B A M
SYMBOL MIN (mm) MAX (mm)

1 DRAIN
A 4.83 5.21
A1 2.29 2.54 2 SOURCE
A2 1.91 2.16 3 DRIVER SOURCE
b 1.07 1.33
4 GATE
b1 2.39 2.94
b3 1.07 1.60 5 DRAIN
b5 2.39 2.69
b7 1.30 1.70
C b8
c
1.80
0.55
2.20
0.68
NOTE:
1. ALL METAL SURFACES ARE TIN PLATED (MATTE),
C
D 23.30 23.60 EXCEPT AREA OF CUT.
D1 16.25 17.65 2. DIMENSIONING & TOLERANCING CONFORM TO ASME
D2 0.95 1.25 Y14.5M-1994.
E 15.75 16.13 3. ALL DIMENSIONS ARE LISTED IN MILLIMETERS. ANGLES
E1 13.1 14.15
ARE IN DEGREES.
E2 3.68 5.10
4. BURR OR MOLD FLASH SIZE (0.5 mm) IS NOT INCLUDED
E3 1.00 1.90
IN THE DIMENSIONS
E4 12.38 13.43
e 2.54 BSC
e1 5.08 BSC
L 17.31 17.82
L1 3.97 4.37
B L2 2.35 2.65 B
P 3.51 3.65
Q 5.49 6.00
S 6.04 6.30
T 17.5 REF.
W 3.5 REF.
X 4 REF.
TITLE:
PACKAGE OUTLINE DRAWING:

TO-247-4L
A A
01
REVISION NO.
Date: 05/05/22 A4
SCALE:1:1 SHEET 1 OF 1
4 3 2 1
e1
C3M0040120K 11
Recommended Solder Pad Layout
C3M0040120K 12
Related Links
• SPICE Models
• SiC MOSFET Isolated Gate Driver reference design
• SiC MOSFET Evaluation Board
Revision History
Document Version Date of Release Description of Changes
1 October-2020 Initial Release

ID Pulse test conditions
2 August-2023 Updated Package Drawing
Updated Landing Pad
C3M0040120K 13
Notes & Disclaimer

This document and the information contained herein are subject to change without notice. Any such change
shall be evidenced by the publication of an updated version of this document by Wolfspeed. No communication
from any employee or agent of Wolfspeed or any third party shall effect an amendment or modification of this
document. No responsibility is assumed by Wolfspeed for any infringement of patents or other rights of third
parties which may result from use of the information contained herein. No license is granted by implication or
otherwise under any patent or patent rights of Wolfspeed.
Notwithstanding any application-specific information, guidance, assistance, or support that Wolfspeed may
provide, the buyer of this product is solely responsible for determining the suitability of this product for the
buyer’s purposes, including without limitation for use in the applications identified in the next bullet point, and
for the compliance of the buyers’ products, including those that incorporate this product, with all applicable
legal, regulatory, and safety-related requirements.
This product has not been designed or tested for use in, and is not intended for use in, applications in which
failure of the product would reasonably be expected to cause death, personal injury, or property damage,
including but not limited to equipment implanted into the human body, life-support machines, cardiac
defibrillators, and similar emergency medical equipment, aircraft navigation, communication, and control
systems, aircraft power and propulsion systems, air traffic control systems, and equipment used in the planning,
construction, maintenance, or operation of nuclear facilities.
The Silicon Carbide MOSFET module switches at speeds beyond what is customarily associated with IGBT-based
modules. Therefore, special precautions are required to realize optimal performance. The interconnection
between the gate driver and module housing needs to be as short as possible. This will afford optimal switching
time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance
between the module and DC link capacitors to avoid excessive VDS overshoot.
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also
referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in
accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this
product can be obtained from your Wolfspeed representative or from the Product Documentation sections of
www.wolfspeed.com.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European
Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the
foreseeable future, please contact your Wolfspeed representative to ensure you get the most up-to-date REACh
SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
Contact info:
4600 Silicon Drive

Durham, NC 27703 USA
Tel: +1.919.313.5300
www.wolfspeed.com/power

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C3M0040120K

1200V 40mohm Silicon Carbide Power MOSFET

• Halogen free, RoHS compliant

Part Number Package Marking

C3M0040120K TO-247-4 C3M0040120K

Maximum Ratings (TC = 25ºC unless otherwise specified)

Gate-Source Voltage (dynamic)1 VGS max -8/+19 V AC (ƒ >1 Hz) Note 1

Gate - Source Voltage (static)2 VGSop -4/+15 Static

66 VGS = 15 V, TC = 25ºC Fig. 19

Operating Junction and Storage Temperature TJ, Tstg -40 to +175

Electrical Characteristics (TC = 25ºC unless otherwise specified)

21 VDS = 20 V, IDS = 33.3 A

Internal Gate Resistance RG(int) — 3.5 — Ω ƒ = 1 MHz, VAC = 25 mV

Reverse Diode Characteristics (TC = 25ºC unless otherwise specified)

Parameter Symbol Typ. Max. Unit Test Conditions Notes

Continuous Diode Forward Current IS — 51 VGS = -4 V, TJ = 25°C

Reverse Recovery Time trr 17 — ns

Reverse Recovery Time trr 33 — ns

Parameter Symbol Typ Unit Note

Drain-Source Current, IDS (A)

Figure 1. Output Characteristics TJ = -40ºC Figure 2. Output Characteristics TJ = 25ºC

On Resistance, RDS On (P.U.)

Figure 3. Output Characteristics TJ = 175ºC Figure 4. Normalized On-Resistance vs. Temperature

On Resistance, RDS On (mOhms)

Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature

Drain-Source Current, IDS (A)

Figure 7. Transfer Characteristic for Figure 8. Body Diode Characteristic at -40ºC

Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

Conditions: -100 Conditions: -100

Maximum Dissipated Power, Ptot (W)

Switching Loss (uJ)

800 400 ETotal with Schottky

600 300 EOn with Schottky

Test Circuit Schematic

Figure 29. Clamped Inductive Switching Waveform Test Circuit

SYMBOL MIN (mm) MAX (mm)

PACKAGE OUTLINE DRAWING:

Recommended Solder Pad Layout

Document Version Date of Release Description of Changes

1 October-2020 Initial Release

Notes & Disclaimer

4600 Silicon Drive

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