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ID , 90 A HAL
S
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
EPC2020 eGaN® FETs are supplied only in
passivated die form with solder bumps.
Maximum Ratings
Die Size: 6.05 mm x 2.3 mm
PARAMETER VALUE UNIT
• High Speed DC-DC Conversion
Drain-to-Source Voltage (Continuous) 60
VDS V • Motor Drive
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 72
• Industrial Automation
Continuous (TA = 25˚C, RθJA = 7°C/W) 90 • Synchronous Rectification
ID A
Pulsed (25°C, TPULSE = 300 µs) 470 • Inrush Protection
Gate-to-Source Voltage 6 • Class-D Audio
VGS V
Gate-to-Source Voltage -4
TJ Operating Temperature -40 to 150
°C
TSTG Storage Temperature -40 to 150
Thermal Characteristics
PARAMETER TYP UNIT
RθJC Thermal Resistance, Junction-to-Case 0.4
RθJB Thermal Resistance, Junction-to-Board 1.1 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 42
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
300 300
200 200
VGS = 5 V
VGS = 4 V
100 VGS = 3 V 100
VGS = 2 V
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
Figure 3: RDS(on) vs. VGS for Various Drain Currents Figure 4: RDS(on) vs. VGS for Various Temperatures
6 6
ID = 30 A
RDS(on) – Drain-to-Source Resistance (mΩ)
RDS(on) – Drain-to-Source Resistance (mΩ)
5 5 25˚C
ID = 60 A
ID = 120 A 125˚C
4 ID = 180 A 4 IVDDS==313 AV
3 3
2 2
1 1
0 0
2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 2
eGaN® FET DATASHEET EPC2020
Figure 5a: Capacitance (Linear Scale) Figure 5b: Capacitance (Log Scale)
3000
Capacitance (pF)
Capacitance (pF)
500
0 10
0 10 20 30 40 50 60 0 10 20 30 40 50 60
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)
ID = 31 A 400
4
VGS – Gate-to-Source Voltage (V)
VDS = 30 V 25˚C
ISD – Source-to-Drain Current (A)
125˚C
300
3
200
2
100
1
0 0
0 2 4 6 8 10 12 14 16 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
QG – Gate Charge (nC) VSD – Source-to-Drain Voltage (V)
Figure 8: Normalized On-State Resistance vs. Temperature Figure 9: Normalized Threshold Voltage vs. Temperature
2.0 1.40
ID = 31 A 1.30 ID = 16 mA
Normalized On-State Resistance RDS(on)
1.8 VGS = 5 V
Normalized Threshold Voltage
1.20
1.6
1.10
1.4 1.00
0.90
1.2
0.80
1.0
0.70
0.8 0.60
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TJ – Junction Temperature (°C) TJ – Junction Temperature (°C)
Figure 10: Gate Leakage Current Figure 11: Safe Operating Area
80 1000
25˚C
100
Limited by RDS(on)
40 10
Pulse Width
100 ms
10 ms
20 1 1 ms
100 µs
0 0.1
0 1 2 3 4 5 6 0.1 1 10 100
VGS – Gate-to-Source Voltage (V) VDS - Drain-Source Voltage (V)
TJ = Max Rated, TC = +25°C, Single Pulse
Junction-to-Board
1
Duty Cycle:
ZθJB, Normalized Thermal Impedance
0.5
0.2
0.1
0.1
0.05 PDM
0.02
0.01 0.01
t1
t2
0.001 Single Pulse
Notes:
Duty Factor: D = t1/t2
Peak TJ = PDM x ZθJB x RθJB + TB
0.0001
10-5 10-4 10-3 10-2 10-1 1 10+1
tp, Rectangular Pulse Duration, seconds
Junction-to-Case
1 Duty Cycle:
ZθJC, Normalized Thermal Impedance
0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t1
t2
0.001
Single Pulse Notes:
Duty Factor: D = t1/t2
Peak TJ = PDM x ZθJC x RθJC + TC
0.0001
10-6 10-5 10-4 10-3 10-2 10-1 1
tp, Rectangular Pulse Duration, seconds
DIE MARKINGS
2020
DIE OUTLINE
Solder Bump View Micrometers
DIM MIN Nominal MAX
A
f
A 6020 6050 6080
X30 B 2270 2300 2330
c 2047 2050 2053
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
X30
Pad 1 is Gate;
e g Pads 2 ,5, 6, 9, 10, 13, 14, 17, 18, 21, 22,
X4 X28
25, 26, 29 are Source;
Pads 3, 4, 7, 8, 11, 12, 15, 16, 19, 20, 23,
Side View
(685)
(785)
Seating plane
2300
24, 27, 28 are Drain;
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Pad 30 is Substrate.*
2300
2050
1330
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
400 200
X34 X35
Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to
improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit Information subject to
described herein; neither does it convey any license under its patent rights, nor the rights of others. change without notice.
eGaN® is a registered trademark of Efficient Power Conversion Corporation. Revised June, 2020
EPC Patent Listing: epc-co.com/epc/AboutEPC/Patents.aspx