7MBR50VM120-50 IGBT Modules

IGBT MODULE (V series)

1200V / 50A / PIM
Features
Low VCE (sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product

Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Maximum
Items Symbols Conditions Units
ratings
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Ic Continuous Tc=80°C 50
Inverter

Icp 1ms Tc=80°C 100

Collector current A
-Ic 50
-Ic pulse 1ms 100
Collector power dissipation Pc 1 device 280 W
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
IC Continuous Tc=80°C 35
Brake

Collector current A
I CP 1ms Tc=80°C 70
Collector power dissipation PC 1 device 210 W
Repetitive peak reverse voltage (Diode) VRRM 1200 V
Repetitive peak reverse voltage VRRM 1600 V
Converter

Average output current IO 50Hz/60Hz, sine wave 50 A

Surge current (Non-Repetitive) I FSM 10ms, Tj=150°C 360 A
I2t (Non-Repetitive) I 2t half sine wave 648 A 2s
Inverter, Brake 175
Junction temperature Tj
Converter 150
Operating junciton temperature Inverter, Brake 150
Tjop °C
(under switching conditions) Converter 150
Case temperature Tc 125
Storage temperature Tstg -40 to +125
between terminal and copper base (*1)
Isolation voltage Viso AC : 1min. 2500 VAC
between thermistor and others (*2)
Screw torque Mounting (*3) - M5 3.5 Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)

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7MBR50VM120-50 IGBT Modules

Electrical characteristics (at Tj= 25°C unless otherwise specified)

Characteristics
Items Symbols Conditions Units
min. typ. max.
Zero gate voltage collector current I CES VGE = 0V, VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current I GES VGE = 0V, VGE = ±20V - - 200 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, I C = 50mA 6.0 6.5 7.0 V
Tj=25°C - 2.20 2.65
VCE (sat) VGE = 15V
Tj=125°C - 2.55 -
(terminal) I C = 50A
Tj=150°C - 2.60 -
Collector-Emitter saturation voltage V
Tj=25°C - 1.85 2.30
VCE (sat) VGE = 15V
Tj=125°C - 2.20 -
(chip) I C = 50A
Tj=150°C - 2.25 -
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 4.2 - nF
Inverter

ton - 0.39 1.20

Turn-on time tr VCC = 600V - 0.09 0.60
I C = 50A
tr (i) - 0.03 - µs
VGE = +15 / -15V
toff RG = 15Ω - 0.53 1.00
Turn-off time
tf - 0.06 0.30
Tj=25°C - 2.25 2.70
VF
I F = 50A Tj=125°C - 2.50 -
(terminal)
Tj=150°C - 2.45 -
Forward on voltage V
Tj=25°C - 1.90 2.35
VF
I F = 50A Tj=125°C - 2.15 -
(chip)
Tj=150°C - 2.10 -
Reverse recovery time trr I F = 50A - - 0.1 µs
VGE = 0V
Zero gate voltage collector current I CES - - 1.0 mA
VCE = 1200V
VCE = 0V
Gate-Emitter leakage current I GES - - 200 nA
VGE = +20 / -20V
Tj=25°C - 2.10 2.55
VCE (sat) VGE = 15V
Tj=125°C - 2.45 -
(terminal) I C = 35A
Tj=150°C - 2.50 -
Collector-Emitter saturation voltage V
Brake

Tj=25°C - 1.85 2.30

VCE (sat) VGE = 15V
Tj=125°C - 2.20 -
(chip) I C = 35A
Tj=150°C - 2.25 -
ton - 0.39 1.20
Turn-on time VCE = 600V
tr I C = 35A - 0.09 0.60
µs
toff VGE = +15 / -15V - 0.53 1.00
Turn-off time RG = 27Ω
tf - 0.06 0.30
Reverse current IRRM VR = 1200V - - 1.00 mA
VFM terminal - 1.70 2.05
Thermistor Converter

Forward on voltage I F = 50A V

(chip) chip - 1.35 -
Reverse current IRRM VR = 1600V - - 1.0 mA
T = 25°C - 5000 -
Resistance R Ω
T = 100°C 465 495 520
B value B T = 25 / 50°C 3305 3375 3450 K

Thermal resistance characteristics

Characteristics
Items Symbols Conditions Units
min. typ. max.
Inverter IGBT - - 0.54
Inverter FWD - - 0.91
Thermal resistance (1device) Rth(j-c)
Brake IGBT - - 0.72 °C/W
Converter Diode - - 0.54
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

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7MBR50VM120-50 IGBT Modules

Characteristics (Representative)

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip Tj= 150oC / chip
100 100
VGE=20V 15V VGE=20V 15V
12V
12V
Collector current: IC [A]

Collector current: IC [A]

75 75

50 50
10V 10V

25 25

8V 8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage: VCE[V] Collector-Emitter voltage: VCE[V]

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj= 25oC / chip
100 8
Tj=25°C
Collector - Emitter voltage: VCE [V]

Tj=150°C
Collector current: IC [A]

75 6
Tj=125°C

50 4

25 2 Ic=100A
Ic=50A
Ic=25A

0 0
0 1 2 3 4 5 5 10 15 20 25

Collector current: IC [A] Gate - Emitter voltage: VGE [V]

[ Inverter ] [ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25oC Vcc=600V, Ic=50A, Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]

10.0
VGE [5V/div]
Capacitance: Cies, Coes, Cres [nF]

Cies

VGE

1.0
Gate - Emitter voltage:

Cres

Coes
0.1

VCE

0.0
0 10 20 30 0 100 200 300 400 500

Collector - Emitter voltage: VCE [V] Gate charge: Qg [nC]

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7MBR50VM120-50 IGBT Modules

[ Inverter ] [ Inverter ]
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=15Ω, Tj= 125°C Vcc=600V, VGE=±15V, Rg=15Ω, Tj= 150°C
10000 10000
Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

1000 1000
toff toff

ton ton

tr tr
100 100

tf tf

10 10
0 25 50 75 100 125 0 25 50 75 100 125
Collector current: IC [A] Collector current: IC [A]

[ Inverter ] [ Inverter ] a
Switching time vs. gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj= 125°C Vcc=600V, VGE=±15V, Rg=15Ω
Switching loss : Eon, Eoff, Err [mJ/pulse ]

10000 15
Switching time : ton, tr, toff, tf [ nsec ]

Eon(150°C)
Eon(125°C)
1000 toff 10 Eoff(150°C)
Eoff(125°C)
ton
tr
100 5 Err(150°C)
tf
Err(125°C)

10 0
10 100 0 25 50 75 100 125 150

Gate resistance : Rg [Ω] Collector current: IC [A]

[ Inverter ] [ Inverter ]
Switching loss vs. gate resistance (typ.) Reverse bias safe operating area (max.)
Vcc=600V, Ic=50A, VGE=±15V +VGE=15V,-VGE <= 15V, RG >= 15Ω ,Tj <= 125°C
Switching loss : Eon, Eoff, Err [mJ/pulse ]

10 125

Eon(150°C)
8 100
Collector current: IC [A]

Eon(125°C)

6 Eoff(150°C) 75
Eoff(125°C)
RBSOA
4 50 (Repetitive pulse)
Err(150°C)
Err(125°C)
2 25

0 0
10 100 0 400 800 1200

Gate resistance : Rg [Ω] Collector-Emitter voltage : VCE [V]

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7MBR50VM120-50 IGBT Modules

[ Inverter ] [ Inverter ]
Forward current vs. forward on voltage (typ.) Reverse recovery characteristics (typ.)
chip Vcc=600V, VGE=±15V, Rg=15Ω
70 1000

Reverse recovery time : trr [ nsec ]

Reverse recovery current : Irr [ A ]
Tj=25°C
60
Forward current : IF [A]

50

trr(150°C)
40 trr(125°C)
Tj=150°C 100
Irr(150°C)
30 Irr(125°C)
Tj=125°C

20

10

0 10
0 1 2 3 4 5 0 25 50 75 100 125 150

Forward on voltage : VF [V] Forward current : IF [A]

[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
100
Tj=25°C Tj=125°
C
Forward current : IF [A]

75

50

25

0
0 1 2 3 4

Forward on voltage : VFM [V]

[ Thermistor ]
Transient thermal resistance (max.) Temperature characteristic (typ.)

10.00 100
Thermal resistanse : Rth(j-c) [ °C/W ]

Resistance : R [kΩ]

FWD[Inverter]
1.00 IGBT[Brake] 10

IGBT[Inverter]
Conv. Diode

0.10 1

0.01
0.1
0.001 0.010 0.100 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

Pulse width : Pw [sec] Temperature [°C ]

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7MBR50VM120-50 IGBT Modules

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip Tj= 150oC / chip
70 70
VGE=20V VGE=20V
15V 15V
12V
60 60
Collector current: IC [A]

Collector current: IC [A]

50 50 12V

40 40
10V 10V
30 30

20 20

10 10 8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage: VCE[V] Collector-Emitter voltage: VCE[V]

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj= 25oC / chip
70 8
Tj=25°C
Collector - Emitter voltage: VCE [V]

Tj=150°C
60
Collector current: IC [A]

6
50
Tj=125°C
40
4
30

20 Ic=70A
2
Ic=35A
10 Ic=18A

0 0
0 1 2 3 4 5 5 10 15 20 25

Collector-Emitter voltage: VCE[V] Gate - Emitter voltage: VGE [V]

[ Brake ] [ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25oC Vcc=600V, Ic=50A, Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]

10.0
VGE [5V/div]
Capacitance: Cies, Coes, Cres [nF]

Cies
VGE

1.0
Gate - Emitter voltage:

Cres

0.1 Coes

VCE

0.0
0 10 20 30 0 100 200 300 400

Collector - Emitter voltage: VCE [V] Gate charge: Qg [nC]

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7MBR50VM120-50 IGBT Modules

Outline Drawings, mm

shows theoretical dimension.

( ) shows reference dimension.

Section A-A

Equivalent Circuit Schematic

[ Converter ] [ Brake] [ Inverter ] [ Thermistor ]

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7MBR50VM120-50 IGBT Modules

WARNING

1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.

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