Mark

 Lundstrom     09/13/2014  

SOLUTIONS:    ECE  305  Homework:  Week  4  

 
Mark  Lundstrom  
Purdue  University  
 
 
1) Answer  the  following  questions  about  resistivity  at  T  =  300  K.  
 
a)   Compute  the  resistivity  of  intrinsic  Si,  Ge,  and  GaAs.  
b)   Compute  the  resistivity  of  n-­‐type  Si,  Ge,  and  GaAs  doped  at   N D = 1019 cm -3 .    
Assume  complete  ionization  of  dopants.  
 
Solution:  
1a)    Compute  the  resistivity  of  intrinsic  Si,  Ge,  and  GaAs.  
 
From  Fig.  3.5  of  SDF  for  lightly  doped  material.  
Si:     µ n = 1360 cm 2 V-s     µ p = 460 cm 2 V-s  
Ge:     µ n = 4000 cm 2 V-s   µ p = 1900 cm 2 V-s  
GaAs:     µ n = 8000 cm 2 V-s   µ p = 400 cm 2 V-s  
 
From  Fig.  2.20  of  SDF  (for  300  K):  
Si:   ni = 1.00 × 1010 cm -3    
Ge:   ni = 2.3× 1013 cm -3  
GaAs:   ni = 2.25 × 106 cm -3  
 
1 1
(
= 1.0 × 1010 × 1.6 × 10−19 × (1360 + 460 ) )
−1
Si:     ρ = =    
nqµ n + pqµ p ni q µ n + µ p ( )
ρ (Si) = 3.4 × 105 Ω-cm  
 
1
(
= 2.3× 1013 × 1.6 × 10−19 × ( 4000 + 1900 ) )
−1
   Ge:     ρ =  
(
ni q µ n + µ p )
ρ ( Ge ) = 46 Ω-cm  
 
1
(
= 2.25 × 106 × 1.6 × 10−19 × (8000 + 400 ) )
−1
GaAs:     ρ =  
(
ni q µ n + µ p )
ρ ( GaAs ) = 3.3× 108 Ω-cm  
 

ECE-­‐305     1   Fall  2014  

Mark  Lundstrom     09/13/2014  

HW4  Solutions  (continued):  

1b)  Compute  the  resistivity  of  n-­‐type  Si,  Ge,  and  GaAs  doped  at   N D = 1019 cm -3 .    
Assume  complete  ionization  of  dopants.  
 
From  Fig.  3.5  of  SDF  for  lightly  doped  material  (hole  can  be  ignored).  
Si:     µ n = 110 cm 2 V-s    
Ge:     µ n = 900 cm 2 V-s  
GaAs:     µ n = 3200 cm 2 V-s  
 
1 1
( )
−1
Si:     ρ = = = 1.0 × 1019 × 1.6 × 10−19 × 110    
nqµ n nqµ n
ρ (Si) = 5.7 × 10−3 Ω-cm  
1 1
( )
−1
Ge:     ρ = = = 1.0 × 1019 × 1.6 × 10−19 × 900    
nqµ n nqµ n
ρ ( Ge ) = 6.9 × 10−4 Ω-cm  
1 1
( )
−1
Si:     ρ = = = 1.0 × 1019 × 1.6 × 10−19 × 3200    
nqµ n nqµ n
ρ ( GaAs ) = 2.0 × 10−4 Ω-cm  
 
 
2) Determine  the  diffusion  coefficient  for  electrons  in  Si  at  T  =  300  K  for  the  following  
two  conditions.  
 
a)   Intrinsic  Si  
b)   Si  doped  at   N D = 1019 cm -3  
 
Solution:  
 
2a)  intrinsic  Si  
 
From  Fig.  3.5  of  SDF  for  lightly  doped  material.  
Si:     µ n = 1360 cm 2 V-s  
Dn k BT kT k BT
= → Dn = B µ n     Dn = µ = 0.026 × 1360  
µn q q q n
 
Dn = 35 cm 2 s  
 

ECE-­‐305     2   Fall  2014  

Mark  Lundstrom     09/13/2014  

HW4  Solutions  (continued):  

 
2b)  Si  doped  at   N D = 1019 cm -3  
From  Fig.  3.5  of  SDF  for  lightly  doped  material.  
Si:     µ n = 110 cm 2 V-s  
k BT
Dn = µ = 0.026 × 110     Dn = 2.9 cm 2 s  
q n
 
3)  
For  the  energy  band  sketched  below,  provide  sketches  of  the  following:  
3a)    the  carrier  densities,  n(x),  and  p(x)  vs.  position.  
3b)    the  electrostatic  potential,   ψ ( x ) ,  vs.  position.  
3c)    the  electric  field  E  vs.  position.  
3d)    the  space  charge  density,   ρ ( x )    vs.  position  
Solution:  
3a)   The  carrier  densities,  n(x),  and  p(x)  vs.  position  

 
3b)   The  electrostatic  potential,  ψ ( x ) ,  vs.  position  

ECE-­‐305     3   Fall  2014  

Mark  Lundstrom     09/13/2014  

HW4  Solutions  (continued):  

 
3c)   The  electric  field  E  vs.  position  
 

 
 
3d)   The  space  charge  density,   ρ ( x )    vs.  position.  
 
 

 
 
 
 
 
 
 
 

ECE-­‐305     4   Fall  2014