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Coulomb's law
F-4TtK
E = o/25,, [o = Here K=dielectric constant
Field due to charged conducting Applications of
Electric Changes Coulomb's law in vector form,
F-4,9
plate, E= o/6, Gauss's law &Fields ATEO
Field inside a conductor=0 Principle of
superposition
Electric field due to a thin
spherical shell -FatEst.
Outside the shell,E=Q/4T8
Inside the shell, E=0
Electric field 1n
On the surface, E= Q/4Te, R
Electricf i e l dl i n e s
Electric dipole, p= qd
Electric field lines
variation of
spherical
E
vs
shell
lectri field 21 Here, d= 21
pointe point,
V-Q/4r Blectric
to point poten tial due Dielectrics are the materials those
chargelue
a are very poor conductors of
electric current. They are basically
Potential due to a insulators and contain no free Conductors Insulators
syst of charges I t is defined as the work done per unit electron. Dielectrics can be easily Such a material which Such a material
4T61 test charge by an external agent in polarised when an electric when placed in an in which electrons
moving the test charge from reference field is applied to it. electric field, the are tightly bound,
point to the desired point S.I. unit J/C These can be classified into two
t
to
a dipole free electrons move and when exposed
V= Pcose due
d u e
a or Volt (V categories: Polar and Non-Polar in a direction opposite in an
Potential
tial electric field
to the field electrons do not
Where,P= qd move ie, having no
0-LAON free electrons
Equipotential
S11irtace Capacitance Capacitance of a parallel plate capaditor,
ield
C= KeAd, K=dielectric constant
Electric potential Capacitance when material slab
energy Capacitance, C= inserted between them,
I tis defined as the work done by the electric
Potential energy C= AyK
force as the configuration of the of a dipole E n e r E
Kd-t)+t
where,t =Thickness of the slab
system changes. It is negative.
u-cv ov
herical shape inserted
S= L 0 - ) Internal resistance()= R
T
V.= Vp l = Balancing length yg are lengths
of null point
No current through G
R=Known resistance
Trace the Mind Map lemperature T>
Second Level Third Level
First Level
It is a region around a magnet or current In April, 1820, Hans Christian Oersted discovered that flow of current
in a wire could deflect a nearby magnetic compass needle.
carrying conductor or a moving charge in
which its magnetic effect can be felt.
SI unit is Tesla (7)= weber/mn where, i total current crossing
=
qB Ve
Ampere
s law Magnetic field at a point inside
U= qBR/M Solenoidd
due to a long solenoid, B = ani
F- qo KE =mu2 And at point on one end,B =
Magnetic field B where n = number of turms per unit
qvB sin8 (qBR)2 length along the length of solenoid
For -0, F= 0 along the magnetic field 2m
For 6=90, ie, if charge's velocity is Here, R in the +
toroid
-B= HNi N=Total number offturns
perpendicular to field direction, force is radius of D's field
d u e
2m7
perpendicular to both field and velocity Magnetic i=Curent in toroid
T r e n t c a r T y n gc o n d u c t o r
F=qvB = 7U current c
dF =idx B, F=iB sine
Magnetic force on
a
moving charge o n
charge rotates
carrying wires
F-ba
27um
Maving Changes Torque exper
uniceperienced by a loOP
.Timeperiod (T) =
qB
in uniform magnen
in field =mB sind n mxB
=
Mathematical1
Magnetic field due to
straight wire current
Symbolic field F i e l d
at the centre
Converrseisoionn of
of ggaalSlvvaeannnosimtevtietry F 2x10-7N, then current = 1A in each
Current
Outside
Field due to a
-NBAK
In side B Hoi Circular Current
=
47T x 107 TmA Here,c
Field due to a long i.e., 6, = 0, 6,= i.e. for d>>>a
B= Hpia
R- -
straight wire current B=o
4TtY
B=
2(a+ d33 B 2d
Diamagnetic suktbstan
positive and very low
d>>>l Terms related
Magnetic field Electromagnets
to magnet
intensity Magnetic permeabilityis
very high, around100000
Broadside -on Position Time period of
Torque Magnetic susceptibilityis
B H47 (d-Pp Magnetic oscillating
bar magnet
positive and very high
-EE intensity
For d>>> Magnetic permeability is slightly less than 1.
Intensity of
B Hom/4n d Magnetic Magnetic susceptibility is positive and very low
permeability magnetization
Electua-magnetic de-M
dt
Jnduction
I-BolV(R+
otional EMR Induced
EMF
Self inductance Emf induced in an AC generator, E -NBAfa sin ot
E- dt Rectangular Eddy
current
r=Resistance of rod moving loop
with velocity p in a uniform [ META
magnetic field B Eddy currents are currents Ifa solenoid of Nturms, the tux through
ina which circulate in conductors eachturn=9=|Bd
8 Conducto
induced R-v
like
stream.
swirling eddies in
They are induced by
a
Self inductance
of long solenoid EMF induced betweenthe ends
of coil-E--NBd--N
changing ma8netic tields
-Bal
o t a t i n gc O
E M F
Resona ce
i-isin of ACcircuits
-
las c= E,/B, and pes-
D o not need any material
medium for propagation 1B
2 Ho
Travels with speed (0) =
Combination of mutually
perpendicular electric and VHo
magnetic fields is referred Produced by accelerated charge
Transverse in nature
to as an electromagnetic wave.
Trace the Mind Map P
Oscillating electric and magnetic fields First Level Second Level Thind Level
are in the same phase and their ratio
is constant (c) = E/B,
Pole is taken as origin.
Principle axis as the X-axis Li-Lr
All distanoes measured from
Incident ray, reflected ray and Angle of deviation, 5 - i+i-A
origin (or pole). normal to the reflecting surface
All distances measured in the direction Orminieam(4-1)A, if A is small1
are coplanar
of indident ray is taken+ ve.
*All distancesmeasured in the direction
Sin m
oPposite to the incident ray is taken-ve. 7TITTTTTTT
Sin AD Light scattered ie., redirected in
different paths when interacts
Lateral Magnification
Microscope
m=1+ [image at near point
sini-V
Sinr N N Refraction of light m-D/f image at infinite
D
Realdepth
Apparernt depth B
B Ray Optico & Compound
Totalinternalreflection Optical
ar-1-Ima shift
n
Optical Inotuumento Instruments microscope
M-- normal
adijustment
hericalsurface
When a ray of light passes from optically
Criticalangle
ms
Refractive index
for multiple I Tel scope
esCoDe
For final image at least distance
denser to rarer medium if incident
angle ( is more than (@) critical angle,
entire light is reflected to the denser uo
eoLiauds Power of
a
medium, is called TLR. It is used in
lens
u
m=- mage at near point]
optical fibre.
114-41
[image at infinite)
4 X 4 1 -1
Incident angle (B) for which angle
of refraction is 90
ie, sin e =1/g R
Lateral Magnification,
a2+a2+2a142 cosp
and I =
I1+la+2|1lh cosp
For constructive Interference,
Locus of all particles (p 2m1, m=0,1,2..)
vibrating in same phase Amax AtAg and Imax =
(7+LY
For destructive, [p (2m-1)T, m=12,3]
=
Fringe-width
by single slit dsin9-n+1)
(for maséima bright fringe
Young's double
slit experiment Coherent source
is a distance between Two sources of light are
two consecutive
Wawe Optics said to be coiherent if the
bright or dark fringe. 30uai 1ou8y inital phase difference
between the waves
emitted by the sources
remains comstant in
Distance between time, otherwise they
nth bright fringe are called incoherent
source of light.
and central fringe Restriction of vibration of light in a
Polarisation particular direction perpendicular
d
D=Distance between
to the direction of propagation.
Brewster's law tan&
source and screen
de-Brogierelation .=hlp
Interference explained by wave nature
Einstein, after an average academic
.When light is of suffciently low wavelength, it career put forward quantum h.=Wavelength assodiated
withparticde or de-Broglie
behaves as a particle. theory of ight in 1905 while
working as a grade III technical wavelength
Light particle having definite energy and definite linear officer in a patent office. p =Momentum
momentum called Pphoton or energy packets.
mK
Energy of each photon = hy = h c -
Cathode Anode
Dual Nauwre of
When ight of sufficiently small Radiation& Matter
wavelength is incident on metal
surface, electrons are ejected Photoelectric
from the metal, the phenomenon effect Hertz and Lenard's
is called photoelectric effect. observation >V
Ejected electrons are Einstein's photoelectric
called photoelectrons.
Minimum energy equal to work
equation
ek-K
function (W) must be given to
an electron so as to bring it
Out of the metal.
Kynax E -
W= eVo .If = Kmax -
0,then
electron may just come out.
=-W V=Stopping potential I f 2>ho or
(o<v), then
no electron will come out.
KmaxMaximum kineticenergy
of ejected electrons If s h or (o>D), then
Krnaxh(V-Vo)
a-particle bombarded on thin gold foil.
Most of a- In 1898, JJ Thomson proposed the
particles passed undeviated or with a small angle. first model of atom also known
. 1 out of 8000
a-particleswere deflected by scattering angle. as plum-pudding model.
(independent of A)
0.693
M e alnite
Nuclear volume V=TR
Particle
A wave of high frequency, having
Y-Rays
no masS
N= N2
Least ionizing power
.Highest penetrating power
y-decay causes no change in atomic no.
Nuclear radius TRA
Voc A (Mass number)
and masS no.
-4/0.693 R =RqA
Negatively charged electron. R= 1.2 x 10 m
Moderate penetrating power (100 times A =Mass No.
Heavy doubly ionis ed helium ion
that of a-particle.)
Least penetrating power less ionizing power than a-particle.
Highest ionizing power Decay of one B-particle increases Trace the Mind Map
Decay of 1 a-particle decreases the
atomic number by 2 and mass number by 4
atomic no. by 1 and mass no. remains First Level Second Level Third Level
unchanged.
Proton and neutron are the constituent
Nuclear fusion
Nudear reactor
electron at 0 K
half cydes.
N charace -1.04
-15
The bands with higher Conduction and 1(uA)
energy above the A range of energies associated
valence band with the quantum states of p-n juncuon diod
Device made by a dlose
electrons in a crystalline solid. contact of n- typeand
F o r w a r db i a s e d
p-typesemiconductors
The difference between the
highest energy in a valence
band and lowest energy in Band ga
a p
or
Forbidden8 Semiconductor diode
Pplication
semiconductors and
insulators on the basis Electuonic Zenerdiode
Heavily doped p-n junction diode
of band theory. assigned to operate in reverse bias
Deuices
LightEmitting Diode/LED
emits light when forward biased 2
Photo diode
nicoKntridnsic A P-n junction whose function
is controlled by the light allowed
Converts light
density of charge Bg =1.1eV for Si Pure semiconductor Impure or doped NPN X energy into
carriers is very 0< Eg < Insulator Charge carrier semiconductor
electrical energy
concentration
high
PNP
For electrons
ne=9x 10 m3
For Hole (n)
= 5x102 m
very low (e)
e-g, Si (Silicon)
Si or Ge doped with
10pnpuoO
semc CEEmode
m amplifier
Different mode
BE
input bpuOuput hput
Cuput
CE
Mode
MMode Mode
pentavalent
(PAs, Sb) element Si or Ge doped with
For--P 3
e=7x1015m3 For-p-type Eg = very high
Electrons are majority
trivalent (B, Al) element
Electrons are minority Tracethe Mind Map
charge carriers.
for Si doped Th1x 10'm 7eV charge cariers. Second Level Thind Level
Holes are minority Outpur First Level
with P for Si doped with Al Holes are majority charge Signal
charge carriers. input
carriers. lgnal