BUZ 90 A

SIPMOS ® Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 90 A 600 V 4A 2Ω TO-220 AB C67078-S1321-A3

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 30 °C 4
Pulsed drain current IDpuls
TC = 25 °C 16
Avalanche current,limited by Tjmax IAR 4.5
Avalanche energy,periodic limited by Tjmax EAR 8 mJ
Avalanche energy, single pulse EAS
ID = 4.5 A, VDD = 50 V, RGS = 25 Ω
L = 29 mH, Tj = 25 °C 320
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TC = 25 °C 75
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤ 1.67 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 07/96

 BUZ 90 A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 600 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS µA
VDS = 600 V, VGS = 0 V, Tj = 25 °C - 0.1 1
VDS = 600 V, VGS = 0 V, Tj = 125 °C - 10 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
VGS = 10 V, ID = 2.8 A - 1.7 2

Semiconductor Group 2 07/96

 BUZ 90 A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 2.8 A 2.5 3.8 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 780 1050
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 110 170
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 40 70
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 2.6 A
RGS = 50 Ω - 20 30
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 2.6 A
RGS = 50 Ω - 50 75
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 2.6 A
RGS = 50 Ω - 120 150
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 2.6 A
RGS = 50 Ω - 70 90

Semiconductor Group 3 07/96

 BUZ 90 A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 °C - - 4
Inverse diode direct current,pulsed ISM
TC = 25 °C - - 16
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 8 A - 1.1 1.2
Reverse recovery time trr ns
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 350 -
Reverse recovery charge Qrr µC
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 3 -

Semiconductor Group 4 07/96

 BUZ 90 A

Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ 10 V

80 4.5

A
W

Ptot ID 3.5
60
3.0
50
2.5

40
2.0

30
1.5

20 1.0

10 0.5

0 0.0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0.01, TC = 25°C parameter: D = tp / T

10 2 10 1

K/W
A
ID t = 18.0µs ZthJC
p 10 0

10 1

100 µs
D

10 -1
/I
DS

1 ms D = 0.50
=V

0.20
)
(on

10 0 0.10
DS
R

0.05
10 ms 10 -2
0.02
0.01

single pulse

10 -1 DC 10 -3
0 1 2 3 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 V 10 10 10 10 10 10 10 10 s 10
VDS tp

Semiconductor Group 5 07/96

 BUZ 90 A

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: VGS

9 l 6.5
Ptot = 75W k
i
j hg f e Ω a b c
A
VGS [V] 5.5
ID a 4.0 RDS (on)
7 d 5.0
b 4.5
c 5.0 4.5
6 d 5.5
e 6.0 4.0
5 f 6.5
3.5
c
g 7.0

4 h 7.5 3.0 d
i 8.0
2.5 e
j 9.0 f
3 g
k 10.0 2.0 h
j i
b l 20.0
k
2 1.5

1.0
VGS [V] =
1 a a b c d e f g h i j k
0.5 4.0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0 0.0
0 5 10 15 20 25 30 35 40 V 50 0.0 1.0 2.0 3.0 4.0 5.0 6.0 A 8.0
VDS ID

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

6.0 5.0

A S

5.0
ID gfs 4.0
4.5
3.5
4.0
3.0
3.5

3.0 2.5

2.5 2.0

2.0
1.5
1.5
1.0
1.0

0.5 0.5

0.0 0.0
0 1 2 3 4 5 6 7 8 V 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0
VGS ID

Semiconductor Group 6 07/96

 BUZ 90 A

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = 2.8 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

8.0 4.6
V 98%
Ω 4.0

RDS (on) VGS(th)

3.6
6.0
3.2 typ

5.0 2.8

2.4 2%
4.0
2.0
3.0 98%
1.6
typ
1.2
2.0
0.8
1.0
0.4

0.0 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj , tp = 80 µs

10 1 10 2

nF A
C IF

10 0 10 1
Ciss

10 -1 Coss 10 0
Tj = 25 °C typ
Tj = 150 °C typ
Crss Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 -2 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 07/96

 BUZ 90 A

Avalanche energy EAS = ƒ(Tj ) Typ. gate charge

parameter: ID = 4.5 A, VDD = 50 V VGS = ƒ(QGate)
RGS = 25 Ω, L = 29 mH parameter: ID puls = 7 A

340 16

mJ
V
280
EAS VGS
12
240

10
200
0,2 VDS max 0,8 VDS max

8
160

6
120

80 4

40 2

0 0
20 40 60 80 100 120 °C 160 0 10 20 30 40 nC 60
Tj Q Gate

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj )

710

680
V(BR)DSS

660

640

620

600

580

560

540
-60 -20 20 60 100 °C 160
Tj

Semiconductor Group 8 07/96

 BUZ 90 A

Package Outlines
TO-220 AB
Dimension in mm

Semiconductor Group 9 07/96