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10/31/2023
EE3147 POWER ELECTRONICS
SEMICONDUCTOR DEVICE
CHARACTERISTICS
Dr. Duy-Dinh Nguyen
Dept. of IA, School of EE
 Types of semiconductor devices

GaN FET TO263 TO220 TO247 Disk Thyristor IGBT

thyristor power power
module module
10/31/2023 3
 Types of semiconductor devices
•Diode (đi-ốt)
•Thyristor (Ti-ris-tor)
•Triac (Tri-ac)
•GTO (Gate-Turn-off Thyristor)
•BJT (Bipolar Junction Transistor)
•MOSFET (Metal-Oxide Semiconductor Field
Effect Transistor)
•IGBT (Insulated Gate Bipolar Transistor)

10/31/2023 4
EE3147 POWER ELECTRONICS

DIODE
 Diode
•Forward biased / phân cực thuận
𝑢𝐴𝐾 > 0 → 𝑖𝐴𝐾 > 0
•Reverse biased / phân cực ngược
𝑢𝐴𝐾 < 0 → 𝑖𝐴𝐾 ≈ 0

Symbol I-V characteristics

Đặc tính Volt-ampere
10/31/2023 6
 Diode: static characteristics
•Voltage drop
𝑢𝐷 = 𝑢𝐷0 + 𝑟𝐷 𝑖𝐷
where: 𝑢𝐷0 : “knee” voltage,
𝑖𝐷 : forward current,
𝑟𝐷 : diode resistance,

•Conduction loss
Δ𝑝𝑐𝑜𝑛𝑑 = 𝑢𝐷 𝑖𝐷 = 𝑢𝐷0 𝑖𝐷 + 𝑟𝐷 𝑖𝐷2
1 𝑇
Δ𝑃𝑐𝑜𝑛𝑑 = න 𝑢𝐷0 𝑖𝐷 + 𝑟𝐷 𝑖𝐷2 𝑑𝑡
𝑇 0
2
= 𝑢𝐷0 𝑖𝐷,𝑎𝑣𝑔 + 𝑟𝐷 𝑖𝐷,𝑟𝑚𝑠 (W)

I-V characteristics
Đặc tính Volt-ampere
10/31/2023 7
 Diode: dynamic characteristics
• Reverse Recovery Phenomenon → Diode
continues to conduct after reverse biased
Diode tiếp tục dẫn một thời gian ngắn sau khi bị phân cực ngược

• Parameters:
• 𝑄𝑟𝑟 [nC] : Reverse recovery charge
• 𝑡𝑟𝑟 [ns] : reverse recovery time
• 𝐼𝑅𝑀 [A] : max reverse recovery current
• 𝑉𝑅 [V] : blocking voltage

• Problems
• High voltage spike
• More EMI emission Reverse recovery
• Additional loss characteristics
Đặc tính phục hồi tính chất khóa
10/31/2023 8
 Diode: dynamic characteristics
• Turn-off loss:
1 𝑡𝑟𝑟 1
𝑃𝑠𝑤 = න 𝑢𝑑 𝑖𝑑 𝑑𝑡 ≈ 𝑉𝑅 𝐼𝑟𝑟 𝑡𝑟𝑟 𝑓𝑠𝑤
𝑇 0 4
1
≈ 𝑉𝑅 𝑄𝑟𝑟 𝑓𝑠𝑤 𝑊
4

• Total loss:
Δ𝑃𝐷 = Δ𝑃𝑐𝑜𝑛𝑑 + Δ𝑃𝑠𝑤
2
1
= 𝑢𝐷0 𝑖𝐷,𝑎𝑣𝑔 + 𝑟𝐷 𝑖𝐷,𝑟𝑚𝑠 + 𝑉𝑅 𝐼𝑟𝑟 𝑡𝑟𝑟 𝑓𝑠𝑤
4

10/31/2023 9
 Types of diode
• General purpose diodes 𝑡𝑟𝑟 = ~25 𝜇s
• Fast recovery diodes 𝑡𝑟𝑟 = ~5 𝜇s
• Ultra-fast recovery diodes 𝑡𝑟𝑟 = 50~200 ns
• Schottky barrier diodes 𝑡𝑟𝑟 ≈ 0 ns
• Silicon-carbide diodes 𝑡𝑟𝑟 < 20 ns

10/31/2023 10
 Diode: thermal management
• Cooling types: natural cooling, forced-air cooling
and liquid cooling

Thermal model with Unideal attachment of

thermal resistances heatsink and device

10/31/2023 11
 Diode: thermal management
• Temperature rise
Δ𝑇 = Δ𝑃𝐷 × 𝑅𝜃𝑗𝑐 + 𝑅𝑐𝑠 + 𝑅𝑠𝑎

𝑅𝜃𝑗𝑐 , 𝑅𝜃𝑐𝑎 [K/W] : provided in the datasheet

𝑅𝑐𝑠 , 𝑅𝑠𝑎 [K/W]: depends on mouting
pressure and air-flow

Thermal model with thermal resistances Equivalent circuit

10/31/2023 12
 Diode: Example 1
MUR3020WT
• Example: MUR3020WT
4 𝜇s
Current [A]

20 𝐴

𝑡
0 10 20 30 40 50 60 70 80
Time [ns]

•Given: 𝑉𝑅 = 100 𝑉; 𝐼𝑟𝑟 = 0.7𝐴;

𝑡𝑟𝑟 = 35 𝑛𝑠;
𝑅𝜃𝑗𝑐 = 1.5 K/W; 𝑅𝜃𝑐𝑎 = 40 K/W;
𝑅𝑐𝑠 = 0.5 K/W; 𝑅𝑠𝑎 = 2.5 K/W
•Determine: 𝐼𝐷,𝑎𝑣𝑔 , 𝐼𝐷,𝑟𝑚𝑠 , 𝑟𝐷
•Calculate: Δ𝑃𝑐𝑜𝑛𝑑 , Δ𝑃𝑠𝑤 , Δ𝑃𝑡𝑜𝑡 , Δ𝑇
I-V characteristics
Đặc tính Volt-ampere
10/31/2023 13
 Diode: Example 1
MUR3020WT
• Example: MUR3020WT
4 𝜇s
Current [A]

20 𝐴

𝑡 Δ𝑉
0 10 20 30 40 50 60 70 80 𝑟𝐷 ≈ = 55.6 (mΩ)
Δ𝐼
Time [𝜇s]
•Equivalent diode resistance
Δ𝑉𝑓
𝑟𝐷 ≈ ≈ 55.56 mΩ Δ𝐼 = 3.6 𝐴
Δ𝐼𝑓
• Average current:
1 𝑇 𝐼𝑝𝑘
𝐼𝐷,𝑎𝑣𝑔 = න 𝑖 𝑡 𝑑𝑡 = 𝐷 = 4 (𝐴)
𝑇 0 2 Δ𝑉 = 0.2 𝑉
•Root-mean-square current:
1 𝑇2 𝐷
𝑈𝐷0 = 0.5 𝑉
𝐼𝐷,𝑟𝑚𝑠 = න 𝑖 𝑡 𝑑𝑡 = 𝐼𝑝𝑘 = 7.3 (𝐴)
𝑇 0 3

• Total diode loss: 𝚫𝑷𝑫 = 𝟓. 𝟎𝟐 W I-V characteristics

Đặc tính Volt-ampere
10/31/2023 14
 Diode: Example 1
• Example: MUR3020WT
• Total diode loss: 𝚫𝑷𝑫 = 𝟓. 𝟎𝟐 W
• Temperature rise without cooling
Δ𝑇 = Δ𝑃𝐷 × 𝑅𝜃𝑗𝑐 + 𝑅𝜃𝑐𝑎 = 𝟐𝟎𝟖. 𝟑𝟑 𝒐 𝑪
• Temperature rise with cooling A typical cooling system

Δ𝑇 = Δ𝑃𝐷 × 𝑅𝜃𝑗𝑐 + 𝑅𝜃𝑐𝑠 + 𝑅𝜃𝑠𝑎 = 𝟐𝟐. 𝟔 𝒐 𝑪

Thermal resistance
Heat distribution simulation depends on air flow
10/31/2023 15
 Diode: selection guide
• Step 1: determine the working condition
determine the average and RMS currents, reverse voltage, frequency, etc.

• Step 2: choose the cooling method

natural/forced air/liquid? → depends on size, availability, mouting position, etc.

• Step 3: determine the desired temperature rise

then calculate the thermal resistance of the cooling type

• Step 4: determine the required device loss

• Step 5: look for the suitable devices in the catalog
popular makers: TI, infineon, ONSemi, ST Electronics, Toshiba, Wolf Speed, Micro-Semi,
etc.

• Step 6: recalculate the operating condition

base on the device datasheet, recalculate the working condition and temperature rise

• Step 7: simulate using professional tool

Tools like FEMM, PSIM, LTSpice, etc. give good assessment of the selected device
10/31/2023 16
 Excercises
1. Một diode có package TO247 có tổng tổn hao 𝛥𝑃𝐷 =
10 W, tìm phương án tản nhiệt để độ tăng nhiệt không
quá 40oC. Mô phỏng kiểm chứng bằng phần mềm
FEMM4.2

2. Tìm diode(s) cho ứng dụng sau:

• Tần số chuyển mạch 100 kHz
• Điện áp ngược danh định tối đa 600 V
• Dòng hiệu dụng 10 A
• Làm mát tự nhiên, không có tản nhiệt
• Độ tăng nhiệt tối đa trên junction: < 40oC
• Mô phỏng kiểm chứng bằng phần mềm FEMM4.2

10/31/2023 17
EE3147 POWER ELECTRONICS

THYRISTOR - SCR
 Thyristor or SCR
• Forward conducting mode / phân cực thuận
𝑢𝐴𝐾 > 0
ቊ 𝑖 > 0 → 𝑖𝐴𝐾 > 0
𝑔

• Forward blocking mode / khóa thuận

𝑢𝐴𝐾 > 0
ቊ 𝑖 = 0 → 𝑖𝐴𝐾 ≈ 0
𝑔

• Reverse blocking mode / khóa ngược

𝑢𝐴𝐾 < 0 → 𝑖𝐴𝐾 ≈ 0

I-V characteristics
Equivilent circuit Symbol Đặc tính Volt-ampere

10/31/2023 19
 Thyristor: static characteristics
•Voltage drop
𝑢 𝑇 = 𝑢 𝑇0 + 𝑟𝑇 𝑖 𝑇
where: 𝑢𝐷0 : “knee” voltage,
𝑖𝐷 : forward current,
𝑟𝐷 : diode resistance,

•Conduction loss
𝑝𝑐𝑜𝑛𝑑 = 𝑢𝐷 𝑖𝐷 = 𝑢𝐷0 𝑖𝐷 + 𝑟𝐷 𝑖𝐷2
1 𝑇
𝑃𝑐𝑜𝑛𝑑 = න 𝑢𝐷0 𝑖𝐷 + 𝑟𝐷 𝑖𝐷2 𝑑𝑡
𝑇 0
2
= 𝑢𝐷0 𝑖𝐷,𝑎𝑣𝑔 + 𝑟𝐷 𝑖𝐷,𝑟𝑚𝑠 (W)

→ similar to diode I-V characteristics

Đặc tính Volt-ampere
10/31/2023 20
 Thyristor: dynamic characteristics
• There are turn-on loss and turn-off loss
• Turn-off loss
• Similar to Diode
• Due to reverse recovery phenomenon
1
Δ𝑃𝑠𝑤,𝑜𝑓𝑓 = 𝑉𝑅 𝐼𝑅 𝑡𝑟𝑟 𝑓𝑠𝑤
4
• Turn-on loss
• Turn-on delay [ns]
• Current slew rate [A/𝜇s]
𝑉𝑠𝑡𝑟 𝑑𝑖
= 𝐴/𝜇𝑠
𝐿𝑠𝑡𝑟 𝑑𝑡
• Voltage slew rate [V/𝜇s]
𝐼𝑓𝑟 𝑑𝑉 Voltage and current waveform
= 𝑉/𝜇𝑠
𝐶𝑎𝑘 𝑑𝑡 during turn-on and -off
1 Dạng sóng điện và điện áp khi chuyển mạch
⇒ Δ𝑃𝑠𝑤,𝑜𝑛 = 𝑉𝑅 𝐼𝑎𝑘 𝑡𝑟 𝑓𝑠𝑤
4
10/31/2023 21
 Thyristor: gate driver
• Single pulse, double pulse, repetitive
pulse
• Gate driver circuit parameters:
• Gate voltage [V]
• Gate current [A] or [mA]
Typical gate current pulse
• Gate resistor [Ω]

• Calculation of gate resistor

𝑉𝑔𝑘
𝑅𝑔,𝑒𝑥𝑡 = − 𝑅𝑔,𝑖𝑛𝑡 Ω
𝐼𝑔

A commercialized Thyristor gate driver Simplified gate circuit

10/31/2023 https://www.5scomponents.com/Pdf/5SYA2034-01.pdf 22
 Thyristor: forced-commutated circuit
• SCR → only ON commutation can be controlled
• OFF → forced-commutated circuit
• Complementary commutation → Class-C
• Auxilliary commutation → Class-D

Class C commutation circuit Class-D commutation circuit

10/31/2023 https://www.electronicshub.org/scr-turn-off-methods/#Forced_Commutation 23
 Thyristor: parasitic capacitor
• Static dv/dt turn-on effect A
𝑖𝑔 𝑡 𝑑 𝐶𝑔𝑎
= 𝑣𝑔𝑘 (𝑡)
𝐶𝑔𝑘 𝑑𝑡
G 𝐶𝑎𝑘 𝑣𝑎𝑘 𝑡
𝐶𝑔𝑎 𝑑
= × 𝑣𝑎𝑘 𝑡 K
𝐶𝑔𝑎 + 𝐶𝑔𝑘 𝑑𝑡 𝐶𝑔𝑘

→ SCR = OFF, if 𝑑𝑣𝑎𝑘 /𝑑𝑡 > 0 Parasitic capacitors across

terminals of a Thyristor
→ 𝒊𝒈 > 𝟎 → SCR is ON spuriously
→ add extra 𝐶𝑔𝑘
→ or reduce 𝑑𝑣𝑎𝑘 𝑡 /𝑑𝑡 with
RC Snubber
Voltage and current waveform of an SCR in
a three-phase rectifer
10/31/2023 24
 Thyristor: parasitic capacitor
• Current spike and ringing occurs
when turn-on due to parasitic cap.
• Maximum allowable slew rate [dV/dt]
𝐼𝑎𝑘 𝑑𝑉
= 𝑉/𝜇𝑠
𝐶𝑎𝑘 𝑑𝑡
Parasitic capacitor

Repetitive gate pulse to ensure 𝐼𝑎 > 𝐼𝑙𝑎𝑡𝑐ℎ Current spike due to discharge of
parasitic capacitor
10/31/2023 25
 Thyristor: stray inductor
• Voltage spike and voltage ringing occurs
when turn-off due to stray inductance
• Rule of thumb:
A 1 inch length ≈ 22 nH
• Maximum allowable slew rate [dI/dt] Stray inductance due to
long lead
𝑉𝑎𝑘 𝑑𝐼𝑎𝑘 -It4 Vt4

= 𝑉/𝜇𝑠
𝐿𝑎𝑘 𝑑𝑡 250

200
Δ𝑈𝑎𝑘

• Voltage spike 150

2 2
100

𝐿𝑎𝑘 𝐼𝑜𝑓𝑓 = 𝐶𝑎𝑘 Δ𝑈𝑎𝑘 50

𝐿𝑎𝑘 0.02 0.02001 0.02002

⇒ 𝑉𝑝𝑘 = 𝑉𝑅 + 𝐼𝑜𝑓𝑓 Time (s)

𝐶𝑎𝑘 Voltage spike due to stray

10/31/2023
inductance 26
 Thyristor: protection
• Excessive di/dt → add a small series inductor
• Excessive voltage spike → RC snubber
• Over voltage → MOV
• Short circuit → Fuse
• Over GK voltage → ZD

Voltage waveform with various RC

snubbers
10/31/2023 27
 Thyristor: protection

RC Thyristor Broken fuse

snubber

Harmed bus
Fuse bar due to arc

Gate
drive cir.
Heatsink Cap. is
damaged due
to heat

Bus bar

An actual thyristor system After explosion of the fuse

10/31/2023 28
 Thyristor: cooling types
• Passive cooling
• Active cooling with forced air
• Active cooling with liquid

• Important parameters
• Total power loss
• Thermal resistance(s)
• Air flow or liquid flow
• Temperature rise
Typical cooling types for SCR
10/31/2023 29
 Applications
• Rectifiers, soft-starter
• Relay-replacement circuit
• Chopper (DC/DC) circuit
• HVDC grid
• etc.

10/31/2023 30
 TRIAC
• TRIAC = TRIode Alternating Current switch
• Equivalent to two SCR in anti-parallel
→ Bidirectional switch
• Current direction depends
on gate current

Structure and Symbol Static characteristics

10/31/2023 31
 GTO
• GTO = Gate Turn Off Thyristor
• 𝑖𝑔 > 0 → turn ON
• 𝑖𝑔 < 0 → turn OFF
• Max. frequency: ~ 1kHz

Structure and Symbol V-I characteristics

10/31/2023 32
 THANKS
FOR
ATTENTIONS

10/31/2023 33
EE3147 POWER ELECTRONICS

MOSFET & IGBT

 MOSFET
• MOSFET = Metal Oxide Semiconductor
Field Effect Transistor
• Turn-ON condition:
𝑉𝑔𝑠 > 𝑉𝑔𝑠,𝑡ℎ IPW60R017C7
• Turn-OFF condition:
𝑉𝑔𝑠 < 𝑉𝑔𝑠,𝑡ℎ
Saturation
region

N-Channel P-Channel N-Channel P-Channel

Structure Symbol I-V Characteristics
35
 MOSFET: static characteristics
• Ohmic region → MOSFET ≡ (dynamic) resistor
• 𝑅𝑑𝑠,𝑂𝑁 depends on Gate voltage, Temp., and Drain current
• Conduction loss:
2
Δ𝑃𝑐𝑜𝑛𝑑 = 𝑅𝑑𝑠,𝑂𝑁 𝐼𝑑𝑠,𝑅𝑀𝑆

NTBL070N65S3-D

NTBL070N65S3-D

Rds,ON versus Drain current Rds,ON versus Temperature

and Gate voltage
36
 MOSFET: Switching characteristics
• Important parameters
• 𝑉𝑔𝑠,𝑡ℎ [V] : Threshold voltage
• 𝑉𝑔𝑠,𝑝𝑙 [V] : Plateau voltage
• 𝑡𝑑,𝑂𝑁 [ns] : Turn-ON delay
• 𝑡𝑟 [ns] : Rise time
• 𝑡𝑑,𝑂𝐹𝐹 [ns] : Turn-OFF delay
Turn-ON process
• 𝑡𝑓 [ns] : Fall time

Simplified switching waveform Turn-OFF process

37
 MOSFET: Hard- vs Soft-Switching
• Switching loss due to
overlapping of voltage and
current
1
Δ𝑃𝑠𝑤,𝑜𝑛 = 𝑉𝐷𝑆 𝐼𝐷 𝑡𝑟𝑖 + 𝑡𝑓𝑢 𝑓𝑠𝑤 (W)
2
1
Δ𝑃𝑠𝑤,𝑜𝑓𝑓 = 𝑉𝐷𝑆 𝐼𝐷 𝑡𝑟𝑢 + 𝑡𝑓𝑖 𝑓𝑠𝑤 (W) Hard-switching waveform
2
• If 𝑉𝐷𝑆 = 0 before turning-on →
Zero-Voltage Switching (ZVS)
• If 𝐼𝐷 = 0 before turning-off →
Zero-Current Switching (ZCS)

Soft-switching waveform
38
 MOSFET: parasitics
• Parasitics capacitance (given in datasheet)
• Feedback Capacitance 𝐶𝑟𝑠𝑠 = 𝐶𝑔𝑑
• Input Capacitance 𝐶𝑖𝑠𝑠 = 𝐶𝑔𝑠 + 𝐶𝑔𝑑 (almost constant)
• Output Capacitance 𝐶𝑜𝑠𝑠 = 𝐶𝑑𝑠 + 𝐶𝑔𝑑 (highly nonlinear)

• Stray inductance (due to packaging) → 1 inch length ~ 22 nH

• Effect:
• Crosstalk or Miller turn-on or Self turn-on
• Voltage and current spikes
• More switching loss and EMI noise

Typical voltage spike at turn-off Equivalent circuit of MOSFET

39
 MOSFET: Gate drive circuit
• Two main types of drivers: isolated and nonisolated

Transformer-based driver Isolated driver IC Non-isolated driver

• Isolated • Expensive • Cheap
• Low cost • Short propagation delay • Compact
• Reliable • Low dV/dt immunity • Non isolated → required
• Short propagation delay • Required isolated PSU an isolation stage
• High parasitic capacitor • Suitable for high voltage • High propagation delay
• Bulky applications • Small parasitic cap.
• Overshoot • Bootstrap can be used at • Required a bootstrap
• Narrow duty cycle range low voltage circuit
• Suitable for low voltage
applications
40
 MOSFET: Gate drive design
• Key parameters:
• 𝑅𝑔 [Ω] : Gate resistor
• 𝑉𝐺𝑆 [V] : Gate drive voltage
• 𝑄𝑔 [nC] : Gate charge
• Simplified key equations:
• Gate resistance [Ω]
𝑉𝐺𝑆
𝑅𝑔 = − 𝑅𝑔,𝑖𝑛𝑡 − 𝑅𝑑𝑟𝑣 Gate current path during turn-on
𝐼𝑔
• Gate power loss
2
𝑉𝐺𝑆
Δ𝑃𝑔 = 𝑡 𝑓
𝑅𝑔,𝑡𝑜𝑡 𝑔 𝑠𝑤
• Gate current
𝑄𝑔
𝐼𝑔 =
𝑡𝑔

Gate charge Gate current path during turn-off

41
 IGBT
• IGBT = Insulated Gate Bipolar Transistor
• Turn-ON condition:
𝑉𝑔𝑒 > 𝑉𝑔𝑒,𝑡ℎ CM600HA-5F

• Turn-OFF condition:
𝑉𝑔𝑒 > 𝑉𝑔𝑒,𝑡ℎ

Volt-ampere characteristics

Structure Symbol Equivalent circuit

42
 IGBT: static characteristics
• Voltage drop on Collector – Emitter channel:
𝑉𝑐𝑒 = 𝑉𝑐𝑒0 + 𝑅𝑐𝑒 𝐼𝑐
• Conduction loss: Δ𝑃𝑐𝑜𝑛𝑑 = 𝑉𝑐𝑒0 𝐼𝑐,𝑎𝑣𝑔 + 𝑅𝑐𝑒 𝐼𝑐,𝑟𝑚𝑠
2

IXGH50N120C3

Δ𝐼𝑐𝑒
Δ𝑉𝑐𝑒
𝑅𝑐𝑒 ≈
Δ𝐼𝑐𝑒
Δ𝑉𝑐𝑒
𝑉𝑐𝑒0

Desat circuit for overcurrent/short

Volt-Ampere characteristics at 25oC circuit protection
https://www.ti.com/lit/ml/slyp764/slyp764.pdf?ts=1634664448993&ref_url=https%253A%252F%252Fwww.google.com%252F 43
 IGBT: Switching characteristics
• Important parameters
• 𝑡𝑑,𝑂𝑁 [ns] : Turn-ON delay
• 𝑡𝑟 [ns] : Rise time
• 𝑡𝑑,𝑂𝐹𝐹 [ns] : Turn-OFF delay
• 𝑡𝑓 [ns] : Fall time
• 𝐸𝑜𝑛 [mJ] : Turn-ON energy
• 𝐸𝑜𝑓𝑓 [mJ] : Turn-OFF energy

Voltage turn-on and turn-off waveforms

(*)https://www.st.com/resource/en/application_note/dm00122
Double pulse test circuit 161-igbt-datasheet-tutorial-stmicroelectronics.pdf

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 IGBT: parasitics
• Parasitics capacitance (given in datasheet)
• Feedback Capacitance 𝐶𝑟𝑒𝑠 = 𝐶𝑔𝑐
• Input Capacitance 𝐶𝑖𝑒𝑠 = 𝐶𝑔𝑒 + 𝐶𝑔𝑐 (almost constant)
• Output Capacitance 𝐶𝑜𝑒𝑠 = 𝐶𝑐𝑒 + 𝐶𝑔𝑐 (highly nonlinear)

• Stray inductance (due to packaging) → 1 inch length ~ 22 nH

• Effect:
• Crosstalk or Miller turn-on or Self turn-on
• Voltage and current spikes
• More switching loss and EMI noise

• Workaround:
• RC/RCD snubber
• Miller-clamp driver
• Negative bias

Equivalent circuit with parasitics

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 IGBT: Gate drive circuit
• Similar to MOSFET gate drive circuit
• Typical gate drive voltage
Si MOSFET SiC MOSFET GaN FET IGBT
0~12 V -5 ~ 20 V -2 ~ 6 V -5 ~ 15 V

• Typical gate drive circuit design

Typical IGBT drive circuit with soft-shutdown

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 MOSFET & IGBT: remaining questions
• What are FOM and SOA?
• How to choose MOSFET and IGBT?
• What to choose? IGBT or MOSFET?
• Connecting in parallel?
• Design of snubber circuit?
• Effect of gate resistance on dynamic performance?
• Design of DESAT circuit?
• Design of gate drive circuit?
• Extract parameters from datasheet?
• How to achieve ZVS? ZCS? Or both?
• etc.

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 Summary
• Discriminate semiconductor devices
• Working principle of Diode, Thyristor, MOSFET
and IGBT
• Understand the effect of parasitic components
• Discriminate between soft- and hard-switching
• Basic parameters of devices
• Calculate the conduction loss and switching loss
• Calculate the temperature rise of devices
• Basic gate drive circuit design

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 THANKS
FOR
ATTENTIONS

10/31/2023 49