MJE15033 on Semiconductor

MJE15032 (NPN),
MJE15033 (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use as high−frequency drivers in audio amplifiers.
Features http://onsemi.com
• DC Current Gain Specified to 5.0 Amperes
hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES
= 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS
• Collector−Emitter Sustaining Voltage − COMPLEMENTARY SILICON
VCEO(sus) = 250 Vdc (Min) − MJE15032, MJE15033
m
250 VOLTS, 50 WATTS
• High Current Gain − Bandwidth Product
co
fT = 30 MHz (Min) @ IC = 500 mAdc
• TO−220AB Compact Package MARKING
DIAGRAM
• Epoxy Meets UL 94 V−0 @ 0.125 in
s.
• ESD Ratings: Machine Model C
4
Human Body Model 3B
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ nt A YW
ne
MJE1503xG
TO−220
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS AKA
CASE 221A
Rating Symbol Value Unit STYLE 1
po
Collector−Emitter Voltage VCEO 250 Vdc
1
Collector−Base Voltage VCB 250 Vdc 2
om
Emitter−Base Voltage
Collector Current − Continuous
VEB
IC
5.0
8.0
Vdc
Adc MJE1503x = Specific Device Code
− Peak 16 x = 2 or 3
ec
A = Assembly Location
Base Current IB 2.0 Adc
Y = Year
Total Power Dissipation @ TC = 25_C PD 50 W W = Work Week
lin
Derate above 25_C 0.40 W/_C G = Pb−Package
Total Power Dissipation @ TA = 25_C PD 2.0 W
Derate above 25_C 0.016 W/_C
on
ORDERING INFORMATION
Operating and Storage Junction TJ, Tstg – 65 to _C
Temperature Range + 150 Device Package Shipping†
THERMAL CHARACTERISTICS MJE15032 TO−220 50 Units/Rail
Characteristic Symbol Max Unit MJE15032G TO−220 50 Units/Rail
(Pb−Free)
Thermal Resistance, RqJC 2.5 _C/W
Junction−to−Case MJE15033 TO−220 50 Units/Rail
Thermal Resistance, RqJA 62.5 _C/W MJE15033G TO−220 50 Units/Rail
Junction−to−Ambient
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
Operating Conditions is not implied. Extended exposure to stresses above the refer to our Tape and Reel Packaging Specifications
Recommended Operating Conditions may affect device reliability. Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

October, 2011 − Rev. 4 MJE15032/D
MJE15032 (NPN), MJE15033 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) 250 − Vdc
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current ICBO − 10 mAdc
(VCB = 250 Vdc, IE = 0)
Emitter Cutoff Current IEBO − 10 mAdc
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 0.5 Adc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
70
50
−
−
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 2.0 Adc, VCE = 5.0 Vdc)
ÎÎÎ
10 −
m
Collector−Emitter Saturation Voltage VCE(sat) − 0.5 Vdc
(IC = 1.0 Adc, IB = 0.1 Adc)
co
Base−Emitter On Voltage VBE(on) − 1.0 Vdc
(IC = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
s.
Current Gain − Bandwidth Product (Note 2) fT 30 − MHz
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = ⎪hfe⎪• ftest.
nt
ne
po
om
ec
lin
on
http://onsemi.com
2
1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL
0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05 RqJC = 2.5°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 1. Thermal Response
m
co
100 There are two limitations on the power handling ability of
a transistor: average junction temperature and second
s.
IC, COLLECTOR CURRENT (AMPS)
100 ms breakdown. Safe operating area curves indicate IC − VCE

10 limits of the transistor that must be observed for reliable
nt
50ms
operation, i.e., the transistor must not be subjected to greater
250ms 10ms dissipation then the curves indicate.
ne
1.0 The data of Figures 2 and 4 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
po
0.1 < 150_C. TJ(pk) may be calculated from the data in Figure 1.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
om
0.01
1.0 10 100 1000
limitations imposed by second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
ec
Figure 2. MJE15032 & MJE15033

Safe Operating Area
lin
TA TC
on
PD, POWER DISSIPATION (WATTS)
3.0 60
2.0 40
TC
1.0 20 TA
0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 3. Power Derating
http://onsemi.com
3
NPN − MJE15032 PNP − MJE15033
1000 1000
150°C 150°C
h FE, DC CURRENT GAIN
h FE, DC CURRENT GAIN

25°C
100 100
25°C
-55°C
-55°C
10 10
1.0 1.0
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
m
Figure 4. NPN − MJE15032 Figure 5. PNP − MJE15033
VCE = 5 V DC Current Gain VCE = 5 V DC Current Gain
co
10 10
s.
nt
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
ne
1.0 -55°C 1.0 -55°C
25°C 25°C
po
150°C 150°C
om
0.1 0.1
0.1 1.0 10 0.1 1.0 10
ec

VCE = 5 V VBE(on) Curve VCE = 5 V VBE(on) Curve
lin
10 100
on
150°C
V, VOLTAGE (VOLTS)
10
V, VOLTAGE (VOLTS)
1.0 25°C
25°C
1.0
-55°C -55°C
0.1 150°C
0.1
0.01 0.01
0.1 1.0 10 0.1 1.0 10
VCE(sat) IC/IB = 10 VCE(sat) IC/IB = 10
http://onsemi.com
4
NPN − MJE15032 PNP − MJE15033

100 100
150°C
10 150°C 10 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
-55°C
25°C
1.0 1.0
-55°C
0.1 0.1
0.01 0.01
0.1 1.0 10 0.1 1.0 10
m
VCE(sat) IC/IB = 20 VCE(sat) IC/IB = 20
co
10 10
s.
V BE, BASE EMITTER VOLTAGE (VOLTS)
V BE, BASE EMITTER VOLTAGE (VOLTS)
nt
ne
1.0 -55°C 1.0 -55°C
25°C 25°C
po
150°C 150°C
om
0.1 0.1
0.1 1.0 10 0.1 1.0 10
ec

VBE(sat) IC/IB = 10 VBE(sat) IC/IB = 10
lin
on
http://onsemi.com
5
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.036 0.64 0.91
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
m
H 0.110 0.161 2.80 4.10
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
co
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
s.
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
nt
N STYLE 1:
PIN 1. BASE
2. COLLECTOR
ne
3. EMITTER
4. COLLECTOR
po
om
ec
lin
on
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
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6

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MJE15032 (NPN),

Derate above 25_C 0.40 W/_C G = Pb−Package

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

Figure 1. Thermal Response

100 ms breakdown. Safe operating area curves indicate IC − VCE

Figure 2. MJE15032 & MJE15033

Figure 3. Power Derating

NPN − MJE15032 PNP − MJE15033

h FE, DC CURRENT GAIN

Figure 6. NPN − MJE15032 Figure 7. PNP − MJE15033

NPN − MJE15032 PNP − MJE15033

V BE, BASE EMITTER VOLTAGE (VOLTS)

Figure 12. NPN − MJE15032 Figure 13. PNP − MJE15033

PUBLICATION ORDERING INFORMATION

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