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CONSTRUCTION

1) ANODE AND CATHODE 4) DEPLETION LAYER


These terminals are made A thin Dielectric (insulating) layer
of semiconductor materials seperates the gate from the
(Silicon) , doped with cathode.
specific impurities to get the It prevents the gate current from
desired properties flowing directly into the cathode

A K
3) P-N LAYERS
2) GATE
It consists of 4 layers of P & N
It is the control terminal of
Layers
SCR , usually made of G
arranged alternatively such that
semiconductor material but is
They form 3 junctions. The outer
Very thin.
layers [P (anode) & N (cathode)]
are heavily doped, whereas middle
layers are lightly doped. The gate
is the middle P layer.
CHARACTERISTIC
S
Reverse blocking mode
•The SCR offers high impedance for current flow
and hence do not conduct. It behaves as an open
switch.
• J 1 and J 3 are reverse-biased while J 2 is forward-
biased.

FORWARD LOCKING MODE


• In this mode , SCR doesn't conduct even
though it is forward-biased.
•J 1 and J 3 are forward-biased but J 2 is
reverse-biased. A small current ( forward
leakage current) flows and the SCR is still
treated as open switch.

FORWARD CONDUCTION MODE


• Since , J 1 and J 3 are already forward-biased,
on increase the voltage across SCR leads to
avalanche breakdown at J 2 that results in
sudden increase in anode current in forward
direction.
APPLICATION

1) LIGHTING DIMMING
SCRs are also used in lighting control of
incandescent and halogen lamps. They
provide smooth and precise adjustments
to light intensity

2) HIGH POWER SWITCHING


SCRs are used in electrical substations and
transmission lines, where they manage power
distribution and fault protection

3) VOLATGE REGULATION
SCRs help in maintaining stable
voltage levels in power distribution
network

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