Unit II

Small Signal Analysis of BJT

 Unit II Small Signal Analysis of BJT
• Transistor amplifying action, General amplifying characteristics,
• Hybrid equivalent model of transistor, H-parameters, CE hybrid
equivalent circuit,
• Basic common emitter amplifier: with and without emitter resistor
and emitter bypass capacitor, AC load line,
• Working of CC & CB amplifiers with small signal voltage and
current gain, input and output impedance.

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 Unit II Books
Text Books:
1. R. L. Boylestad, L. Nashelsky, “Electronic Devices and Circuits
Theory”, 9th Edition, Prentice Hall of India, 2006.
2. Thomas Floyd, “Electronic Devices”, Prentice Hall, 9th Edition
2012
3. Ramakant A. Gaikwad, “Op Amps and Linear Integrated Circuits”,
Pearson Education 2000
References:
1. David A. Bell, “Electronic Devices and Circuits”, 5th Edition,
Oxford press.
2. Albert Paul Malvino, “Electronic Principles”, 8th Edition,
McGraw Hill Publication.
3. Anil K. Maini and Varsha Agarwal “Electronic Devices and
Circuits”, Wiley India
4. Millman, Halkias, “Integrated Electronics-Analog and Digital
Circuits and Systems”, Tata McGrawHill, 2000.

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 Transistor Amplifying Action (CE)
• Transistors can act as amplifiers
when they are operated in the active
region or when it is correctly biased
• It is required when we want to
increase or amplify the input signal
• A transistor can take in a very small
weak signal through the base
junction and release the amplified
signal through the collector
• Transistors amplifiers are used
frequently in
RF (Radio Frequency),
OFC (Optic Fiber
Communication),
Audio Amplification, etc.

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 Transistor Amplifying Action (CE)
• The input signal is applied on the
Base-Emitter junction and the output • Amplifier raises the level of a
is taken through the load in Emitter- weak signal.
Collector junction • No change in the wave shape.
• There is also an application of DC
• No change in the frequency
voltage in the input circuit for
amplification. Besides, a small of the input signal
change in signal voltage results in
the change of emitter current which Need of Amplification
is mainly due to the low resistance in • The signal o/p of a
the input circuit. transducer or microphone,
thermo couple.
• It is very weak.
• It must be amplified before
feeding to the loud speaker
etc

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 Transistor Amplifying Action (CE)

• Base emitter junction is forward biased by VBB.

• Collector base junction is reverse biased by VCC.
• During positive half cycle of signal forward bias is
increased.
• Hence base current IB is increased.
• So Ic increases and ICRC drop increases.
• The output VCE decreases as VCE = VCC - ICRC
• There is a phase shift of 180º between input and output.

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 Transistor Amplifying Action
(CE)
Use of Capacitors
• Coupling capacitor used to couple the AC component and decouples the
DC component
• At the output of the amplifier, the DC component will be invariantly
present due to the amplification process
• This is being removed by the coupling capacitor at the output and hence
we will have pure AC signal being supplied to the load connected at the
output.

Emitter- bypass Capacitor CE.

• When AC signal is applied as I/P, the variable current will flow through
RC and RE
• The current in RE develops a variable voltage drop across RE and provides
additional negative feedback to the emitter junction.
• It results in an overall reduction of voltage gain of the amplifier
• CE connected across RE provides a short circuit path for the AC signal and
reduce the effect of additional negative feedback due to the AC signal and
a corresponding reduction in voltage gain.

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 Transistor Amplifying Action (CE)

Role of Resistance
• The resistors R1 and R2 form the voltage division circuit to supply the DC
voltage to the base of the transistor
• The resistors RC and RE control the collector and emitter currents
respectively.
• These resistors provide the required junction voltages between E-B, C-B,
C-E and currents IE, IB and IC to work the transistor in the active region of
the output characteristics.
The emitter resistor RE produces the Need of CE Confg.
following changes in the performance • High input impedance.
of CE amplifier: • High gain.
• It causes bias stabilization • High slew rate.
• It causes current gain to remain
• High bandwidth.
essentially unaltered.
• High efficiency.
• Increases the input and output
impedances. • High stability.
• It stabilizes the voltage gain. • High linearity.

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 Transistor Amplifying Action (CE)
Important Points To draw Hybrid
• Moderately low input resistance(1 kΩ to 2 kΩ). model of a Transistor,
• Moderately high output resistance(50 kΩ). we need to draw its
• High current gain. AC equivalent circuit
• Very high voltage gain. • At AC, reactance of
• Very high power gain. Capacitors is very
low, hence can be
• Input and output signals are 180° out of phase
shorted (C1, C2 &
C3)
• Power supply is also
shorted

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 Hybrid Model of Transistor (CE)
As RB1 & RB2 are parallel, the input The h-parameter model in CE
impedance will be RB1 II RB2. The configuration
collector resistance Rc also appears from
collector to emitter as emitter is bypassed

Eqts for I/P voltage VBE & O/P

current Ic

The Hybrid model has 04 h –

parameters. The “h” stands for
Hybrid as the parameters are mix of
impedance, admittance &
dimensionless units.

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 Hybrid Model of Transistor (CE)
The typical values of these
parameters are Hre = 1 x
10-4 , hoe = 1K to 10K, &
hfe = 50 – 750.

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 CE with Emitter Resistor RE bypassed

Output Impedance Zo

Input Impedance Zi: As hfeIb is an ideal current generator with

infinite output impedance looking into the
It is parallel combination of circuit is Zo = Rc
RB1 & RB2
The Voltage Gain Av

As RBB is in parallel with hie,

hence Zi = RBB II hie

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 CE with Emitter Resistor RE
bypassed
The Current Gain Ai
It is the ration of Io/Ii. At the input
the current is split between the
parallel branch RBB & hie,
reconsider the h-parameter model

CE with RE Un-bypassed

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 CE with RE bypassed

Voltage Gain Av
As Zb = hie + hfeRE, the
product hfeRE is greater
than hie, hence Zb can be
reduced to approximation

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 CE with Emitter Resistor RE
bypassed
Current Gain Ai

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CC H-Parameter Analysis
CC H-Parameter Analysis
CC H-Parameter Analysis
CB H-Parameter Analysis
CB H-Parameter Analysis
Comparison
Comparison
 DC Biasing + AC Signal
• When an AC signal is applied to the base
of the transistor, IC and VCE will both vary
around their Q-point values.
• When the Q-point is centered, IC and VCE
can both make the maximum possible
transitions above and below their initial dc
values.
• When the Q-point is above the center on
the load line, the input signal may cause
the transistor to saturate. When this
happens, a part of the output signal will be
clipped off.
• When the Q-point is below midpoint on
the load line, the input signal may cause
the transistor to cutoff. This can also
cause a portion of the output signal to be
clipped.
DC + AC Biasing
 DC and AC Equivalent Circuits
+VCC +VCC

IC RC
RC
R1 R1
rC
vin vce
RL

vin R1//R2

R2 R2
IE

RE RE
rC = RC//RL

DC equivalent AC equivalent
Bias Circuit circuit circuit
 AC Load Line
IC(sat) = VCC/(RC+RE) • The ac load line of a given
amplifier will not follow the plot
DC Load Line
of the dc load line.
IC • This is due to the dc load of an
(mA) amplifier is different from the ac
VCE(off) = VCC
load.
VCE

IC(sat) = ICQ + (VCEQ/rC) ac load line

IC Q - point
ac load line
IC
dc load line

VCE(off) = VCEQ + ICQrC

VCE VCE
 AC Load Line
What does the ac load line tell you?
• The ac load line is used to tell you the
maximum possible output voltage rC
vin vce
swing for a given common-emitter
amplifier. R1//R2

• In other words, the ac load line will

tell you the maximum possible peak-
to-peak output voltage (Vpp ) from a rC = RC//RL

given amplifier. IC(sat) = ICQ + (VCEQ/rC)

• This maximum Vpp is referred to as
the compliance of the amplifier. ac load line
IC
(AC Saturation Current Ic(sat) ,
AC Cutoff Voltage VCE(off) )
VCE(off) = VCEQ + ICQrC
The compliance of an amplifier is found by
the maximum possible of IC and VCE from VCE

their respective values of ICQ and VCEQ.

Maximum possible Compliance
 Maximum possible Compliance
VPP = 2ICQrC (A)
VPP = the output compliance, in peak-
to-peak voltage
ICQ = the quiescent value of IC
rC = the ac load resistance in the
circuit
• Equation (A) sets the limit in terms
of VCE(off).
• If the value obtained by this equation
is exceed, the output voltage will try
to exceed VCE(off), which is not
possible.
• This is called cutoff clipping,
because the output voltage is clipped
off at the value of VCE(off).
VPP = 2VCEQ (B)
When IC = IC(sat)­, VCE is ideally equal to
0V. When I­C = ICQ, VCE is at VCEQ.
When IC makes its maximum possible
transition (from ICQ to IC(sat)), the output
voltage changes by an amount equal to
VCEQ.
• Equation (B) sets of the limit
in terms of IC(sat).
• If the value obtained by this
equation is exceed, the output
will experience saturation
clipping
Maximum possible Compliance