Physical Constants

10
Angstrom unit A 10 m

=
23
Avogadro constant 6.02214 x 10
av
N =
23
Boltzmann constant 1.38066 x 10 J/K
B
k

=
19
Electron charge 1.60218 x 10 C q

=
30
Electron rest mass 0.91094 x 10 kg
e
m

=
19
Electron volt 1eV 1.60218 x 10 J

=
14
0
Permittivity in vacuum 8.85418 x 10 F/cm c

=
34
Planck constant 6.62607 x 10 J s h

=
34
Reduced Planck constant ( / 2 ) 1.05457 x 10 J s h t

=
8
Speed of Light 2.99792 x 10 m/s c =
Thermal voltage at 300K 0.025852 V (Use 0.026 V)
B
k T
q
=


Properties of Si
19 -3
2.86 x 10 cm
C
N
19 -3
2.66 x 10 cm
V
N
0
Dielectric constant 11.9c
Effective electron mass ( / ) 0.26
n e
m m
Effective hole mass ( / ) 0.69
p e
m m
9 -3
Intrinsic carrier concentration 9.65 x 10 cm
i
n
2
Electron mobility 1450 cm /(V s)
n

2
Hole mobility 505 cm / (V s)
p

Electron affinity 4.05 V _
g
Energy gap E 1.12 eV











PN Junction Equations
1
n p
q n q p

=
+

np = n
i
2

2
/
g T
i C V
E U
n N N e

=
2
bi
ln( / )
B
A D i
k T
V N N n
q
=
( )
2 1 1
s
bi F
A D
W V V
q N N
c (
= +
(


s
depletion
A
C
W
c
=
( )
/
1
T
V V
S
I I e =
s
depletion
C
W
c
=

BJT Equations (NPN)
1
BE
T
V
V
CE
C S
A
V
I I
V
e
(
= +
(


C
F
B
I
I
| =
C
F
E
I
I
o =

BJT Small Signal
Hybrid Pi
, ,
C T A
m o
T B C
I V V
g r r
V I I
t
= = =


CMOS Equations (NMOS)
( ) ( ) ( )
2 2
1
2
D P S P D D P
n
I V V V V V V
|

(
= + (



G Th
P
V V
V
n

=
ox
W
C
L
| =

CMOS Small Signal
2 ,
m D md D
g I g I | = =