2SC2922

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216)

ICBO

Ratings

Unit

VCB=180V

100max

VEB=5V

100max

IC=25mA

180min

24.40.2

180

IEBO

VEBO

V(BR)CEO

IC

17

hFE

VCE=4V, IC=8V

IB

VCE(sat)

IC=8A, IB=0.8A

2.0max

PC

200(Tc=25C)

fT

VCE=12V, IE=2A

50typ

MHz

Tj

150

COB

VCB=10V, f=1MHz

250typ

pF

55 to +150

hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)

a
b

VB2
(V)

IB1
(A)

IB2
(A)

ton
(s)

tstg
(s)

tf
(s)

40

10

0.2typ

1.3typ

0.45typ

V CE ( sat ) I B Characteristics (Typical)

I B =20mA
0

0.2

0.4

0.6

0.8

h FE I C Temperature Characteristics (Typical)

(V C E =4V)
200

Typ
50

10

125C

Transient Thermal Resistance

DC Cur rent Gain h F E

100

100
25C
30C

50

10
0.02

17

Collector Current I C (A)

0.1

0.5

10 17

100

Collector-Emitter Voltage V C E (V)

300

Collector Cur rent I C (A)

p)

nk

10

si

at

Without Heatsink
Natural Cooling

he

120

ite

160

fin

10

1000

In

62

100

ith

Emitter Current I E (A)

10

Maxim um Power Dissip ation P C (W)

DC

10

0.2
1

200

0.5

0.1

p)

0.1

P c T a Derating

20

Tem

0.5

Time t(ms)

10

40

0
0.02

em

50

Typ

2.4

Safe Operating Area (Single Pulse)

80

j-a t Characteristics

(V C E =12V)

60

Collector Current I C (A)

f T I E Characteristics (Typical)

Cut -off Fre quen cy f T ( MH Z )

DC C urrent G ain h FE

200

Base-Emittor Voltage V B E (V)

(V C E =4V)

0.5

1.0

Base Current I B (A)

h FE I C Characteristics (Typical)

0.1

5A

Collector-Emitter Voltage V C E (V)

10
0.02

eT

I C =10A

se

50mA

as

10

(C

100 mA

5C

15

12

200m

10

Weight : Approx 18.4g

a. Part No.
b. Lot No.

(V CE =4V)

25

30

0mA

17

Collector Current I C (A)

Collector Current I C (A)

15

mA
mA
500
A
400m

j - a ( C/W)

600

3.0 +0.3
-0.1

5.450.1
C

I C V BE Temperature Characteristics (Typical)

Collector-Emitter Saturation Voltage V C E (s at) (V )

A
1.5

mA

0.65 +0.2
-0.1

1.05 +0.2
-0.1

IC
(A)

0
70

2
3

5.450.1

RL
()

1A

21.40.3

30min

VCC
(V)

I C V CE Characteristics (Typical)

2.1

2-3.20.1

Typical Switching Characteristics (Common Emitter)

17

6.00.2

36.40.3

VCEO

Tstg

External Dimensions MT-200

(Ta=25C)

Conditions

(Ca

Symbol

Unit

180

VCBO

Electrical Characteristics

30

Ratings

Symbol

4.0max

Absolute maximum ratings (Ta=25C)

Application : Audio and General Purpose

20.0min

LAPT

80

40

5
0

Without Heatsink
0

25

50

75

100

125

Ambient Temperature Ta(C)

150

2000