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Silicon NPN Epitaxial Planar Transistor (Complement To Type 2SA1216)
Silicon NPN Epitaxial Planar Transistor (Complement To Type 2SA1216)
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
36.4±0.3 6.0±0.2
VCBO 180 V ICBO VCB=180V 100max µA
24.4±0.2 2.1
VCEO 180 V IEBO VEB=5V 100max µA 2-ø3.2±0.1 9
7
30min∗
21.4±0.3
IC 17 A hFE VCE=4V, IC=8V a
IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V b
4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
0.65 +0.2
Tstg –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
-0.1
1A mA mA
A
70
0 600 mA
1.5
500
15 15
A
400m
30 0mA
A 2
200m
10 10
100 mA
p)
em
p)
I C =10A
Tem
eT
1
5 5
as
se
50mA
(C
(Ca
5˚C
5A
˚C
I B =20mA 12
˚C
–30
25
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2 2.4
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 200 2
125˚C
DC Cur rent Gain h F E
DC C urrent G ain h FE
100 100 1
Typ 25˚C
–30˚C
50 50 0.5
10 10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
160
s
Cut -off Fre quen cy f T ( MH Z )
60 DC
W
Typ 10
ith
Collector Cur rent I C (A)
In
fin
5 120
ite
he
40
at
si
nk
80
1
20
Without Heatsink 40
0.5
Natural Cooling
Without Heatsink
5
0 0.2 0
–0.02 –0.1 –1 –5 –10 2 10 100 300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
62