Professional Documents
Culture Documents
PDF Create 8 Trial: AOD9N40
PDF Create 8 Trial: AOD9N40
l
ID (at VGS=10V) 8A
applications.By providing low RDS(on), Ciss and Crss along
ria
RDS(ON) (at VGS=10V) <0.8Ω
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
c T
power supplies and LED backlighting.
8
om
Top View
.n a
TO252
DPAK
e
Bottom View
t
ce. D
D
D
e
n
G G
S
S
ua
S
r
G
w C
C
Pulsed Drain Current IDM 22
C
Avalanche Current IAR 3.2 A
C
Repetitive avalanche energy EAR 150 mJ
H
Single pulsed avalanche energy EAS 300 mJ
Peak diode recovery dv/dt dv/dt 5 V/ns
TC=25°C 125 W
B PD
Power Dissipation o
Derate above 25 C 1 W/ oC
Junction and Storage Temperature Range TJ, TSTG -50 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C
Thermal Characteristics
Parameter Symbol Typical Maximum Units
A,G
Maximum Junction-to-Ambient RθJA 45 55 °C/W
Maximum Case-to-sink A RθCS - 0.5 °C/W
Maximum Junction-to-Case D,F RθJC 0.7 1 °C/W
l
VDS=320V, TJ=125°C 10
ria
IGSS Gate-Body leakage current VDS=0V, VGS=±30V ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V ID=250µA 3.4 4 4.5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4A 0.64 0.8 Ω
gFS Forward Transconductance VDS=40V, ID=4A 8 S
c T
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 8 A
ISM Maximum Body-Diode Pulsed Current 22 A
8
om
DYNAMIC PARAMETERS
Ciss Input Capacitance 500 630 760 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 45 73 100 pF
Crss
Rg
Reverse Transfer Capacitance
Gate resistance
t e VGS=0V, VDS=0V, f=1MHz
ce. 2
1.2
5.7
2.6
9
4.0
pF
Ω
SWITCHING PARAMETERS
.n a
Qg Total Gate Charge 10 13.1 16 nC
Qgs Gate Source Charge VGS=10V, VDS=320V, ID=8A 3.9 nC
e
n
Qgd Gate Drain Charge 4.8 nC
tD(on) Turn-On DelayTime
ua
17 ns
r
Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V 1.5 1.9 2.3 µC
F
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
PD
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. L=60mH, IAS=3.2A, VDD=150V, RG=10Ω, Starting T J=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
16 100
VDS=40V -55°C
10V
12
10
6.5V
ID (A)
ID(A)
8 125°C
6V
1
l
ria
4
VGS=5.5V 25°C
0 0.1
0 5 10 15 20 25 30 24 68 10
c T
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
2.0 3
8
om
1.6 2.5
VGS=10V
Normalized On-Resistance
ID=4A
VGS=10V 2
e
RDS(ON) (Ω)
1.2
ce. 1.5
t
0.8
.n a
1
0.4
0.5
e
n
0.0
ua
0 3 6 9 12 15 18 0
r
1.2 1.0E+02
ww
F
ID=30A
1.0E+01
1.1 40
BVDSS (Normalized)
125°C
PD
1.0E+00
IS (A)
1 25°C
125°C 1.0E-01
1.0E-02
0.9
25°C
1.0E-03
0.8 1.0E-04
-100 -50 0 50 100 150 200 0.2 0.4 0.6 0.8 1.0
TJ (oC) VSD (Volts)
Figure 5: Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics
15 10000
Ciss
VDS=320V
12
ID=8A 1000
Capacitance (pF)
Coss
VGS (Volts)
9
100
6
l
Crss
ria
10
3
0 1
04 8 12 16 20 0.1 1 10 100
c T
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100 800
8
om
10µs
10 600 TJ(Max)=150°C
RDS(ON)
100µs TC=25°C
limited
Power (W)
ID (Amps)
1
t e1ms
10ms
ce.400
TJ(Max)=150°C DC
.n a
0.1 200
TC=25°C
e
n
0.01 0
1 10 100 1000 0.0001 0.001 0.01 0.1 1 10
ua
r
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
w C
10
ww
TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance
1 RθJC=1°C/W
PD
0.1
PD
0.01
Single Pulse Ton
T
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
150 10
120 8
Power Dissipation (W)
60 4
l
ria
30 2
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
c T
Figure 12: Power De-rating (Note B) Figure 13: Current De-rating (Note B)
400
8
om
TA=25°C
300
e
Power (W)
200
ce.
.n a t
100
e
n
ua
0
r
10
D=Ton/T In descending order
ww
F
0.1
0.01
PD
0.001 Ton
Single Pulse T
0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000 10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Vgs
Qg
+ 10V
VDC
+ Vds Qgs Qgd
- VDC
DUT -
Vgs
l
Ig
ria
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
c T
Vds
90%
DUT
+
Vgs Vdd
8
VDC
om
Rg -
10%
Vgs Vgs
.n a t e ce. t d(on) tr
t on
t d(off)
t off
tf
Id Vds
w C
Vgs +
Vgs VDC Vdd I AR
Rg - Id
ww
DUT
F
Vgs Vgs
PD