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 PD - 5.023B

CPV363MF
IGBT SIP MODULE Fast IGBT
1
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses D1 D3 D5
TM Q1 Q3 Q5
• HEXFRED soft ultrafast diodes 3 9 15
• Optimized for medium operating frequency (1 to 4 10 16
10kHz) See Fig. 1 for Current vs. Frequency curve D2 D4 D6
Q2 Q4 Q6
6 12 18

Product Summary 7 13 19

Output Current in a Typical 5.0 kHz Motor Drive

7.65 ARMS per phase (2.4 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current, each IGBT 16
IC @ TC = 100°C Continuous Collector Current, each IGBT 8.7
ICM Pulsed Collector Current 50 A
ILM Clamped Inductive Load Current 50
IF @ TC = 100°C Diode Continuous Forward Current 6.1
IFM Diode Maximum Forward Current 50
VGE Gate-to-Emitter Voltage ±20 V
VISOL Isolation Voltage, any terminal to case, 1 min. 2500 VRMS
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 36 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 14
TJ Operating Junction and -40 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55-0.8 N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 3.5
RθJC (DIODE) Junction-to-Case, each diode, one diode in conduction — 5.5 °C/W
RθCS (MODULE) Case-to-Sink, flat, greased surface 0.1 —
Wt Weight of module 20 (0.7) — g (oz)

Revision 1
C-149
CPV363MF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage — 0.69 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 1.5 1.6 IC = 8.7A VGE = 15V
— 1.9 — V IC = 16A See Fig. 2, 5
— 1.6 — IC = 8.7A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 6.0 8.0 — S VCE = 100V, IC = 8.7A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 2500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 12A See Fig. 13
— 1.3 1.6 IC = 12A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 23 30 IC = 16A
Qge Gate - Emitter Charge (turn-on) — 2.4 5.9 nC VCC = 400V
Qgc Gate - Collector Charge (turn-on) — 9.2 15 See Fig. 8
td(on) Turn-On Delay Time — 25 — TJ = 25°C
tr Rise Time — 21 — ns IC = 8.7A, VCC = 480V
td(off) Turn-Off Delay Time — 210 300 VGE = 15V, RG = 23Ω
tf Fall Time — 300 450 Energy losses include "tail" and
Eon Turn-On Switching Loss — 0.44 — diode reverse recovery
Eoff Turn-Off Switching Loss — 2.0 — mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss — 2.4 3.2
td(on) Turn-On Delay Time — 25 — TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time — 21 — ns IC = 8.7A, VCC = 480V
td(off) Turn-Off Delay Time — 280 — VGE = 15V, RG = 23Ω
tf Fall Time — 550 — Energy losses include "tail" and
Ets Total Switching Loss — 3.4 — mJ diode reverse recovery
Cies Input Capacitance — 670 — VGE = 0V
Coes Output Capacitance — 100 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 10 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 80 120 TJ = 125°C 14 IF = 12A
Irr Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig.
— 5.6 10 TJ = 125°C 15 V R = 200V
Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
— 220 600 TJ = 125°C 16 di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig.
During tb — 116 — TJ = 125°C 17

Notes:
Repetitive rating; V GE=20V, pulse width VCC=80%(VCES), VGE=20V, L=10µH, Pulse width 5.0µs,
limited by max. junction temperature. RG= 23Ω, ( See fig. 19 ) single shot.
( See fig. 20 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-150
 CPV363MF

12 3.7

Total O utpu t P ow e r (kW )

9 2.8
Lo ad C urrent (A )

S
6 1.9

3
TC = 90°C 0.9
TJ = 125°C
Power Factor = 0.8
Modulation Depth = 0.8
VC C = 60% of Rated Voltage
0 0
0.1 1 10 100
f, F re quenc y (kH z)

Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave

1000 10 00
I C , C ollector-to-E mitter C urrent (A )

IC , C ollector-to-E m itter Current (A )

1 00
TJ = 25 °C
100
T J = 15 0°C

TJ = 15 0°C 10

T J = 25 °C
10

V G E = 1 5V V C C = 1 00 V
2 0µ s P U LS E W IDTH 5 µs P UL S E W ID TH
1 0.1
1 10 5 10 15 20

V C E , C ollector-to-E m itter V oltage (V ) V G E , G ate-to-E m itter V olta g e (V )

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

C-151
CPV363MF

40 3.5
V G E = 15 V VG E = 1 5 V
80 µs P UL S E W ID TH

V C E , C ollector-to-E m itter V oltage (V )

Maxim um D C Collector C urrent (A )

3.0
30 I C = 34 A

2.5

20 I C = 17 A

2.0

10 I C = 8.5A
1.5

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 1 00 120 140 160
T C , C ase Tem perature (°C ) TC , C ase Tem perature (°C )

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature Case Temperature

10
The rm al R espo nse (Z th JC )

D = 0 .5 0

1
0.2 0

0.1 0

0 .05
PD M
0.0 2
0.1 0.0 1 t
1
S ING L E PU LS E t2
(TH E R MAL RE S PO N SE )
N o te s :
1 . D u ty fa c to r D = t /t
1 2
2 . P e a k T J = P D M x Z thJ C + T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10

t 1 , R ectangular Pulse D uration (sec)

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

C-152
 CPV363MF

1 4 00 20
V GE = 0V, f = 1MHz V C E = 40 0 V
C ies = C ge + C gc , Cce SHORTED I C = 1 7A
1 2 00 C res = C gc

V G E , G ate-to-E m itter V oltage (V)

C oes = C ce + C gc 16

1 0 00
C , C a pac itanc e (pF )

Cies
12
8 00

Coes
6 00
8

4 00

Cres 4
2 00

0 0
1 10 10 0 0 5 10 15 20 25 30

V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , Total G ate C harge (nC )

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

2.7 10
VC C = 48 0V
VG E = 1 5V
TC = 25°C I C = 3 4A
To ta l S w itc hing Lo sse s (m J)
T o ta l S w itc h in g L o s s e s (m J)

2.6 IC = 17 A

2.5
I C = 1 7A

2.4 I C = 8.5A

2.3
R G = 23 Ω
V GE = 1 5V
V CC = 48 0V
2.2 1
0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 1 00 120 140 160

R G , G a te R e s is ta n c e ( Ω ) TC , C a se T e m p e ra tu re (°C )
W

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Case Temperature

C-153
CPV363MF
10 1000
RG = 23 Ω VGGE E= 20 V
TC = 1 50°C

I C , C o lle cto r-to -E m itte r C u rre n t (A )

T J = 125 °C
VCC = 48 0V
T o ta l S w itc h in g L o s s e s (m J )

VGE = 1 5V
8

100

S A FE O P E RA TIN G A RE A
6

10

2 1
0 10 20 30 40 1 10 100 1000
I C , C o lle c to r-to -E m itte r C u rre n t (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

100
Instantaneous Forward Current - I F (A)

TJ = 150°C

10 TJ = 125°C

TJ = 25°C

1
0.4 0.8 1.2 1.6 2.0 2.4

Forward Voltage Drop - V FM (V)

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

C-154
 CPV363MF
160 100

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

120

IF = 24A
I F = 24A

I IRRM - (A)
t rr - (ns)

I F = 12A
I F = 12A
80 10
IF = 6.0A
IF = 6.0A

40

0 1
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

600 10000

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C
di(rec)M/dt - (A/µs)

400 1000
IF = 6.0A
Q RR - (nC)

I F = 24A
IF = 12A
I F = 12A
200 100

IF = 24A
IF = 6.0A

0 10
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

C-155
CPV363MF
90% Vge
+Vge

Vce
Same type
device as
D.U.T.
90% Ic
10% Vce
Ic Ic
5% Ic
430µF
80%
of Vce D.U.T. td(off) tf

∫
t1+5µS
Eoff = Vce ic dt
t1

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf

∫
trr
GATE VOLTAGE D.U.T. trr
Qrr = id dt
Ic
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
Vce
AND CURRENT Vpk
Irr
10% Ic
Vcc Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
td(on) tr

∫
t2

∫
Eon = Vce ie dt t4
t1 Erec = Vd id dt
t3
t1 t2 DIODE REVERSE
RECOVERY ENERGY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

Refer to Section D for the following:

Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit

Package Outline 5 - IMS-2 Package (13 pins) Section D - page D-14

C-156