VN0610L, VN10KLS, VN2222L

Vishay Siliconix

N-Channel 60-V (D-S) MOSFETs with Zener Gate

PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)
VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27
VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31
VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23

FEATURES BENEFITS APPLICATIONS

D Zener Diode Input Protected
D Low On-Resistance: 3 W
D Ultralow Threshold: 1.2 V
D Low Input Capacitance: 38 pF
D Low Input and Output Leakage
D Extra ESD Protection
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed, Easily Driven
D Low Error Voltage
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
D Inductive Load Drivers

Device Marking
TO-226AA Front View
TO-92S
(TO-92)
VN0610L
Device Marking
“S” VN Front View
S 1 0610L S 1
xxyy VN10KLS
“S” VN
G 2 VN2222L G 2 10KLS
xxyy
“S” VN
2222L
xxyy “S” = Siliconix Logo
D D xxyy = Date Code
3 3

“S” = Siliconix Logo

Top View xxyy = Date Code Top View
VN0610L VN10KLS
VN2222L

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

VN2222L
Parameter Symbol VN0610L VN10KLS Unit
Drain-Source Voltage VDS 60 60
V
Gate-Source Voltage VGS 15/–0.3 15/–0.3
TA= 25_C 0.27 0.31
_
Continuous Drain Current (TJ = 150_C) ID
TA= 100_C 0.17 0.20 A
Pulsed Drain Currenta IDM 1 1.0
TA= 25_C 0.8 0.9
Power Dissipation PD W
TA= 100_C 0.32 0.4
Thermal Resistance, Junction-to-Ambient RthJA 156 139 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C

Notes
a. Pulse width limited by maximum junction temperature.

Document Number: 70213 www.vishay.com

S-04279—Rev. F, 16-Jul-01 11-1
VN0610L, VN10KLS, VN2222L
Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
VN0610L
VN10KLS VN2222L

Parameter Symbol Test Conditions Typa Min Max Min Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 120 60 60
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 1.2 0.8 2.5 0.6 2.5

Gate-Body Leakage IGSS VDS = 0 V, VGS = 15 V 1 100 100 nA

VDS = 48 V, VGS = 0 V 10 10
Zero Gate Voltage Drain Current IDSS m
mA
TJ = 125_C 500 500

On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 1 0.75 0.75 A

VGS = 5 V, ID = 0.2 A 4 7.5 7.5

Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 0.5 A 3 5 7.5 W

TJ = 125_C 5.6 9 13.5

Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 300 100 100

mS
Common Source Output Conductanceb gos VDS = 7.5 V, ID = 0.05 A 0.2

Dynamic
Input Capacitance Ciss 38 60 60

Output Capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz 16 25 25 pF

Reverse Transfer Capacitance Crss 2 5 5

Switchingc
Turn-On Time tON VDD = 15 V, RL = 23 W 7 10 10
ID ^ 0.6 A, VGEN = 10 V ns
Turn-Off Time tOFF RG = 25 W 9 10 10

Notes
a. For DESIGN AID ONLY, not subject to production testing. VNDP06
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.

www.vishay.com Document Number: 70213

11-2 S-04279—Rev. F, 16-Jul-01
 VN0610L, VN10KLS, VN2222L
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Ohmic Region Characteristics Output Characteristics for Low Gate Drive

50 1.0
6V
VGS = 2.0 V
5V
40 0.8
VGS = 10 V
1.9 V
ID – Drain Current (mA)

ID – Drain Current (A)

30 0.6
1.8 V 4V

20 1.6 V 0.4

1.5 V 3V
10 1.4 V 0.2

1.2 V 2V

0 0
0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)

Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage

0.5 7
VDS = 15 V

6
0.4
rDS(on) – On-Resistance ( Ω )

TJ = –55_C
5
ID – Drain Current (A)

25_C
0.3 250 mA
4
125_C

3 500 mA
0.2
ID = 50 mA
2
0.1
1

0 0
0 1 2 3 4 5 0 4 8 12 16 20
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

Normalized On-Resistance
On-Resistance vs. Drain Current vs. Junction Temperature
5 2.25
rDS(on) – Drain-Source On-Resistance ( Ω )

VGS = 10 V
rDS(on) – Drain-Source On-Resistance ( Ω )

2.00
4
1.75
VGS = 10 V
(Normalized)

3 ID = 0.5 A
1.50
0.1 A
1.25
2

1.00
1
0.75

0 0.50
0 0.2 0.4 0.6 0.8 1.0 –50 –10 30 70 110 150
ID – Drain Current (A) TJ – Junction Temperature (_C)

Document Number: 70213 www.vishay.com

S-04279—Rev. F, 16-Jul-01 11-3
VN0610L, VN10KLS, VN2222L
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Threshold Region Capacitance

10 100
VGS = 0 V
f = 1 MHz
80
ID – Drain Current (mA)

C – Capacitance (pF)
1
TJ = 150_C 60

0_C
100_C Ciss
40
0.1 25_C
Coss

20
Crss
–55_C

0.01 0
0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 0 10 20 30 40 50

VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)

Gate Charge Load Condition Effects on Switching

15.0 100
ID = 0.5 A VDD = 15 V
RL = 25 W
12.5 VGS = 0 to 10 V
VGS – Gate-to-Source Voltage (V)

VDS = 30 V
t – Switching Time (ns)

10.0

7.5 10 td(off)

tf
5.0
48 V td(on)

2.5
tr

0 1
0 100 200 300 400 500 600 0.1 0.5 1.0

Qg – Total Gate Charge (pC) ID – Drain Current (A)

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)

1

Duty Cycle = 0.5

Normalized Effective Transient

0.2
Thermal Impedance

0.1 Notes:

0.05
0.1 PDM
0.02
t1
t2
t1
1. Duty Cycle, D =
t2
0.01 2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse

0.01
0.1 1 10 100 1K 10 K
t1 – Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 70213

11-4 S-04279—Rev. F, 16-Jul-01