Celebrating 20 Years of GMR − Past, Present, and Future (II)

Nano-Scale Patterned Magnetic Tunnel Junction

and Its Device Applications
X. F. Han, Z. C. Wen, Y. Wang, L. Wang and H. X. Wei
State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics,
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

access memory (MRAM) devices in last

X. F. Han Z. C. Wen Y. Wang L. Wang H. X. Wei
Nano-scale patterned techniques, DC- 1. INTRODUCTION
pulsed-current-driven magnetization Since 1995 the large tunneling magneto-
switching and spin-dependent transport resistance (TMR) effect at room tempera-
properties of magnetic tunnel junctions ture was found in the Al-O barrier-based
(MTJs) are presented in this paper. The magnetic-tunnel-junction (MTJ)[1, 2],
experiments show that the spin transfer there has been an increasing motivated
torque (STT) plays a main switching role intense research because of its technologi-
in the magnetization current switching cal and potential applications in a series
and the current-induced circular magnetic of magnetic devices and promoting the
field plays an assisted-switching role in the magneto-electronics and spin-electronics
nanoring-MTJs. Such nano-scale MTJs developments [3, 4].
can be used to develop the STT-MRAM,
nano-oscillator, current-driven magnetic Based on the continuous efforts by many
logic, spin torque diode and double bar- researchers and engineers on the MTJ
rier MTJ spin-transistor etc. We also sum- structural and material optimizations, the
marize recent research on spin-dependent first successful application of MTJ and
transport properties in MgO(001)-based TMR was in computer TMR-read-head
MTJs using first-principles calcula- techniques, which resulted in the magnetic
tions, including tunneling mechanism, recording density in hard disk drive (HDD)
interfacial resonance states in single bar- system continuously increasing from 100-
rier Fe/MgO/Fe MTJs, and quantum-well 300 Gbit/inch2 mainly based on amorphous
resonance in double barrier MTJs. Al-O barrier MTJs [5-7] to present 520-600
Gbit/inch2 based on single crystal MgO(001)
Keywords: Nano-scale MTJ, spin transfer barrier MTJ [8, 9] combined with longitu-
torque effect, MRAM, nano-oscillator, dinal and perpendicular magnetic recording
current-driven magnetic logic, spin torque media development. It has led to the distinct
diode, double barrier MTJ spin-transis- improvements of computer and information
tor. technology (IT) industries with each passing
day during last decade.
The second application of MTJ and
TMR was to develop magnetic random
ten years [10-12] because the MRAM has
many predicted coexistence advantages
including the non-volatility, anti-radiation,
unlimited endurance, high speed, high
density and low power consumption, and
so on. Although the newfangled MRAM
devices with the capacity of 16 Mbit and 4
Mbit using the Astroid and Toggle model
designs were fabricated respectively
[13, 14], an expected MRAM device with
the density or capacity more than 256
Mbit/inch2 and even 1 Gbit/inch2 have
not yet been realized based on either the
conventional magnetic field magnetiza-
tion switching or the elliptic/rectangular-
shaped MTJ structures in the state of the
present MRAM devices. The main cause
is that the stray field energy and the shape
anisotropy energy of a nano-scale size
MTJ increase distinctly with increasing
density, resulting in the very large coerciv-
ity and switching field and further higher
power consumption compared. From this
viewpoint, conventional and magnetic
field magnetization switching elliptic-
or rectangular-shaped MTJ bit cell may
restrict the present MRAM device devel-
opment. Therefore, how to reduce power
consumption and at the same time increase
thermal stability are major challenge in de-
veloping ever smaller magnetic elements
and higher density for advanced magnetic
memory technology [15, 16]. Fortunately,
recent theoretical and experimental inves-
tigations on spin transfer torque effects
both in giant magneto-resistance (GMR)
nanopillar and nano-scale MTJs provide
us a possible new approach for developing
the novel MRAM devices [17-20]. Further
investigations on the nano-patterned Al-O
and MgO(001)-barrier based MTJs com-

24 AAPPS Bulletin December 2008, Vol. 18, No. 6


bined with spin-polarized current switch-
ing suggested the possible MRAM designs
with high-density magnetic memory cells,
enhanced thermal stability and reduced
power consumption [21-26]. The current-
driving MRAM devices with the density
or capacity over than 1 Gbit/inch2 can be
expected to come true in next few years.
The third kind of important applications
for MTJ and TMR is to develop multifari-
ous magneto-sensitive sensors since the
high TMR effect was discovered. The
micro- and nano-scale patterned MTJs
can be used as the key magneto-sensitive
elements for/in designing the various
digital sensors, such as very weak mag-
netic field sensors [27, 28], magnetic
bio-sensor [29-31], magneto-audiphone &
hearing aids, motorcar magnetic sensors,
magnetic anti-counterfeit detector and
TMR cash detector, location sensors in
vernier calipers and machine tools, angle
or speed or accelerated-speed sensors for
taximeter, tachometer, cyclometer or ac-
celerometer etc.
The other sorts of concernful applica-
tions for nano-scale patterned MTJs and
TMR effect can be expected for devel-
oping the magnetic logic devices [32],
nano-oscillators [33-36], spin torque diode
[37], double-barrier tunneling transistors
[38, 39] etc., which can be hopefully car-
ried out some remarkable improvements
of information technology (IT) and semi-
conductor integrate circuit industries in
the near future.
In this paper we briefly introduce recent
investigations on Nano-scale patterned
techniques, DC-pulsed-current-driven
magnetization switching, spin-dependent
transport properties of magnetic tun-
nel junctions (MTJs) and their possible
applications in spin-electronic devices.
We also summarize recent research on
spin-dependent transport properties in
MgO(001)-based MTJs using first-princi-
ples calculations, which can be referenced
for designing the STT-MRAM, nano-os-
cillators, magnetic logic, spin-transistor,
and other spintronic devices in future.
Nano-scale Patterned Magnetic Tunnel Junction and Its Device Applications
2. NANO-FABRICATION METH- a Raith 150 scanning electron microscope
OD AND NANO-SCALE MTJ using positive E-beam resist of polymethyl
PROPERTIES methacrylate (PMMA) and negative E-
Nowadays, with science and technology
developing rapidly, there are many meth-
ods to deposit nanoscale thick metallic
or nonmetallic films, such as molecular
beam epitaxy (MBE), sputtering, electron
beam evaporation, chemical vapor depo-
sition (CVD), and so on. MTJ films are
mainly comprised of nanoscale magnetic
multilayers insulated by a nonmagnetic
layer, together with seed layers and cap-
ping layers. Magnetron sputtering has
been widely applied to deposit MTJ stack
layers due to high deposition rate and
films quality. For an instance, selecting a
substrate Si(100)/SiO2 and cleaning it with
conventional method first, a typical MTJ
stack layers with the spin-valve-type struc-
ture of Ta(5)/Ir22Mn78(10)/Co75Fe25(2)/
Ru(0.75)/ Co60Fe20B20 (3)/Al(d nm)-oxide/
Co60Fe20B20(2.5)/Ta(3)/Ru(5) (thickness
unit: nm) were then deposited on the
substrate using an ULVAC TMR R&D
Magnetron Sputtering System (MPS-
4000-HC7) with a base pressure of 5 ×
10-7 Pa. The Al oxide barrier was made
by inductively coupled plasma (ICP)
oxidizing Al layer with the thickness of
d = 0.6 ~ 1.0 nm and an oxidation time
of 10 ~ 60 s in a mixture of oxygen and
argon at a pressure of 1.0 Pa in a separate
vacuum chamber. An in-plane magnetic
field of about 100 Oe was applied to in-
duce the uniaxial magnetic anisotropy of
the magnetic layers. After deposition, the
MTJ films were subsequently annealed
at 265℃ for one hour to achieve optimal
TMR ratio. Here the TMR ratio is defined
as TMR = (RAP − RP )/RP.
The nano-fabrication process of nano-
sized MTJs can be based on electron beam
lithography, extreme ultraviolet lithogra-
phy process, or nano-print technique etc.
The MTJ stack films deposited on the
Si(100)/SiO2 substrate were patterned into
bottom electrode by ultraviolet optical li-
thography combined with argon ion beam
milling and reactive ion etching (RIE). The
nano-size active MTJ area was patterned
by electron beam lithography (EBL) with
AAPPS Bulletin December 2008, Vol. 18, No. 6
beam resist of hydrogen silsesquioxane
(HSQ) techniques. The nano-sized MTJ
pillar including the top resist was then
buried by SiO2 deposition in a magnetron
sputtering system. Finally, the resist and
SiO2 on the top of a nano-size MTJ were
removed using a lift-off process mentioned
above, before the top electrode was pat-
terned in the perpendicular direction.
The transport properties was measured
using a standard four probe method or a
Physical Properties Measurement System
(PPMS).
For example, Fig. 1 shows scanning
electron microscope (SEM) images for
arrays of nano-ring MTJs with outer
diameters of 100, 300, 500, and 700 nm,
respectively, where the ring width is 30
nm. Fig. 2 shows SEM images for an array
of nano-size elliptic MTJs with the long
and short axis of 40 and 30 nm.
Figure 3 shows the tunnel resistance
(R) and TMR ratio versus spin-polar-
ized current (I) loops driven by a pulse
DC current for a typical spin-valve-type
Nanoring-MTJs with the outer diameter
of 100 nm and ring-width of 25 nm and
barrier thickness of Al(0.60 nm)-oxide.
For the NR-MTJ with a size of 5.89 knm2,
its TMR ratio of 18.2%, lower and higher
resistant of 285 Ω and 337 Ω, minimum
and maximum resistance-area product RA
of 1.68 Ωμm2 and 1.98 Ωμm2 at RT were
observed respectively. The critical value
IC of switching current between 500 and
540 μA for the free Co60Fe20B20 (2.5 nm)
layer was observed at RT.
The experiments and further simulations
in nano-size ring-shaped MTJs show that
the spin transfer torque is a dominant fac-
tor for the observed magnetization current-
switching [24, 25]. Furthermore, the pulse
DC current induces a circular magnetic
field (Oersted field) of smaller than 20
(Oe) at the outer boundary of the 100 nm-
diameter ring layer, which can affect the
magnetization states as assisted-switching
25
Celebrating 20 Years of GMR − Past, Present, and Future (II)

the spin-polarized current, in which the

Fig. 3: The tunnel resistance (R) and TMR ratio
as a function of the spin-polarized current at
RT for a typical spin-valve-type NR-MTJ with
an outer diameter of 100 nm and ring-width
of 25 nm. The barrier was formed with thick-
ness of Al (0.60 nm) layer and the oxidation
time of 10 s.
shape of the magnetic element has been
patterned into elliptic or rectangular shape.
Undesired properties such as a large shape
anisotropy and a strong stray field from
each magnetic element would limit the
memory cell density increase. Therefore, it
is desirable to use nanoring-shaped MTJs
whose magnetization directions can be
directly controlled by the spin-polarized
current and STT effect simultaneously to
decrease the power consumption and im-
prove the thermal stability for developing
the MRAM as shown in Fig. 4.

3.2. Current Driving Magnetic Logic

mechanism. Such TMR & R versus I loops Nanoscale magnetic materials and
driven by a pulse spin-polarized DC cur- structures have been usually used in
rent in the nano-scale MTJs show good data storage and sensor applications.
quadrate shape for a basic device element However, another potential applica-
applications. The critical switching cur- tion based on magnetic phenomena is
rent from antiparallel (parallel) to parallel the logic program device application
(antiparallel) states using Co60Fe20B20 (2.5 though there are relatively fewer studies
nm) free layer in such MTJs are smaller on magnetic logic. Spin transfer torque
than 1.0 mA; this corresponds to the effect offers superior prospects to real-
critical switching current density about ize magnetic logic based on nanoscale
JC = 6 × 106 A/cm2 . Such JC value can be elliptic or nanoring-shaped MTJs due
expected to further decrease by optimizing to simply architecture of devices and
FM materials, barrier materials, nano-MTJ lower power consumption, comparing
size and structure to fit the lowest-power- with previous attempts of magnetic logic
consumption requirement in the device elements [32].
applications.
This novel concept for STT magnetic
3. PATTERNED MTJ AND ITS logic devices is based on one single na-
POTENTIAL DEVICE APPLI- noscale MTJ cell composed of soft fer-
CATIONS romagnetic (FM) layer, barrier, and hard
3.1. STT and Nano-ring MRAM De- FM layer sandwiched by capping and seed
vices layer with current of logic operations in-
Fig. 1: SEM images of the typical nano-ring
MTJ arrays with outer diameters of 100 (a), Some experiments demonstrated that the put and output electrodes, and read in/out
300 (b), 500 (c), and 700 (d) nm. The ring power consumption for switching the electrodes. Fig. 5 shows the schematic
width is 30 nm.
spin-valve pillars [21] or MTJs [22] can graph of magnetic logic device based on
be decreased by using the STT effect from nanosize elliptic MTJ with spin-polarized

Fig. 4: A prototype 2×2 MRAM demo device based on one NR-

Fig. 2: SEM images of the typical nano-size MTJ and one transistor structure with spin polarized current
elliptic MTJ arrays with the long and short switching. Here the word line, also as the gate line, plays the role
axis of 40 and 30 nm. of addressing each bit together with the cross bit line.

26 AAPPS Bulletin December 2008, Vol. 18, No. 6

 Nano-scale Patterned Magnetic Tunnel Junction and Its Device Applications
current driving. Fig. 6(a) is one example current as shown in Fig. 5 at the electrodes
for logic AND operation. We demonstrate A and B as logical 1 (0) of the inputs. The
the operation sequences of the logic AND logic operation sequence as follows: (1)
gate. Firstly, we set the initial state R = The parallel configuration of magnetiza-
low (0) of MTJ by inputting current -I (0) tion can not be changed by applying 0
from electrodes A, B, and C. The magne- (negative current) from electrode A and B
tization of the soft FM layer is parallel towhich corresponds to an output logical 0.
the alignment of the hard FM layer. This (2) The input electrode A and B are applied
configuration is low resistance state of 0 and 1 (negative and positive current)
MTJ cell defined as logical 0 of output, individually. The direction of magnetiza-
meanwhile, we define positive (negative) tion is unchanged due to lower density
of the net current through the MTJ. The
same case takes place if 1 is applied at the
input electrode A which is corresponding
to output 0. (3) As applying the logical 1
(positive current) at both input electrode A
and B, the magnetization direction of soft
FM layer is switched by the STT or spin
polarized current. The logic output 1 is
obtained by the antiparallel configuration
of magnetization. The logic AND is dis-
played completely in the truth table. Also,
Fig. 5: Schematic graph of magnetic logic
device based on nanosize elliptic or nanor- we can get logic function of OR, NOR,
ing shaped MTJ with spin-polarized current NAND, and XOR in similar way whose
driving. truth tables are shown in Fig. 6(b).
Although there are still some difficul-
ties to realize magnetic logic function,
such as technology of nanofabrication and
stabilization of devices, the magnetic logic
devices based on spin-polarized current
open up way for the possibility of real-
izing all magnetic information processing
systems incorporated by both magnetic
memory and logic.
3.3. Patterned MTJ and Superconduc-
tor-ring Mixed Magneto-sensitive
Device
Figure 7 shows a typical TMR magnetic
sensor using Wheatstone bridge design
for the general applications. The upper
Fig. 6: (a) Logic AND operation; (b) Truth
tables for logic function of OR, NOR, NAND, Fig. 7: A typical TMR magnetic sensor using Wheatstone bridge
and XOR. design for the general applications.
AAPPS Bulletin December 2008, Vol. 18, No. 6
right and bottom left drawing show one
bridge branch with two sensors leg1 and
leg2 comprised of two uncovered MTJs.
The upper left and bottom right show
other bridge branch with one pair of leg3
and leg4 configured of two MTJs which
were “shielded” by the permalloy film.
Using such Wheatstone bridge design,
the sensitivity of TMR sensor can be
increased comparing with a magneto-
sensitive sensor consist of only one single
patterned MTJ element. For increasing
the break-down voltage and anti-jam-
ming stability each bridge leg can also
consist of series-wound MTJs with same
numbers.
The only sensors capable of detecting
less than fT (10-15 Tesla) magnetic field
have been suggested based on low-tem-
perature superconducting loop and GMR
element mixed devices, operating at 4.2
K [28]. Here, we show a magnetic field
sensor design that combines a supercon-
ducting flux-to-field transformer with a
low-noise patterned-MTJ sensor as shown
in Fig. 8. It was designed a flux-to-field
transformer formed of a large supercon-
ducting loop closed by a micrometer-sized
constriction. When an external low-fre-
quency field Ha is applied perpendicular to
the superconducting loop, a supercurrent
is established to maintain the flux through
the loop. If this current flows through a
micro- or nano-scale constricted area, its
high surface current density will lead to a
very high coplanar magnetic field above
and below the narrow part of the loop.
This field can be detected by the TMR
sensor, which is sensitive to the in-plane
field. Therefore, this superconductor/MTJ
mixed devices can be expected to detect
27
Celebrating 20 Years of GMR − Past, Present, and Future (II)

mental samples [43] using the MgO(001)

barrier have achieved the TMR ratio of
over 500% at room temperature. These
amazing discovery raises both scientific
and commercial interest and accelerates
the development of new spin-electronics
devices. Here first-principles calculations
play an significant role for exploiting and
understanding deep fundamental physics
involved in exciting phenomena including
tunneling mechanism [40, 44], quantum-
Fig. 8: A magnetic field sensor design that combines a super- well (QW) resonance [45, 46], interfacial
conducting flux-to-field transformer with a low-noise patterned- resonance (IR) states [47, 48]. The main
MTJ sensor.
results of these calculations are summa-
rized as below.

4.1. Tunneling Mechanism in Single

Barrier Fe/MgO/Fe MTJs
Butler et al. first predicted that Fe(100)/
MgO(100)/Fe(100) MTJs show huge
TMR ratio due to strong filtering effect
of majority ∆1 states [40] in the MgO
barrier layer. They used first-principles
based calculations of the tunneling con-
ductance and magnetoconductance within
the layered Korringa-Kohn-Rostoker
(LKKR) implementation [49] of the local
spin density approximation (LSDA) of the
density functional theory. Comparing with
simple spin-dependent tunneling models
including the much used Julliere model,
the first-principles calculations were able
to show the underlying electronic structure
of MTJs more realistically and indicated
how the electronic structures of both Fe
Fig. 9: 2DBZ resolved transmission probability at Fermi energy
as a function of kǁ. (a), (b) and (c) for Fe(001)/MgO/Fe; (d), electrodes and MgO barrier determine
(e) and (f ) for Fe(001)/Co(1)/MgO(8)/Co(1)/Fe. (a) and (d), the TMR. They proved the difference in
Majority-spin channel; (b) and (e), Minority-spin channel; (c) the decay rates for different symmetries
and (f ), either majority-to-minority or minority-to-majority spin
channels in antiparallel configuration. of the Bloch states in majority-spin and
minority-spin channels. Majority channel
tunneling is dominated by the transmis-
extremely weak magnetic fields up to fT by the properties of the ferromagnetic sion through ∆1 states at small values of
level. The sensor can be operated up to 77 electrode, but also depends on the elec- transverse crystal momentum in the two
Kelvin with a high-Tc superconductors tronic structure of the insulator barrier as dimensional Brillouin zone (2DBZ), while
materials. well as the electrode/barrier interfaces. minority channel tunneling as well as both
In 2001 giant TMR effect was predicted spin channels in antiparallel configuration
4. FIRST-PRINCIPLES CALCU- in epitaxial Fe(001)/MgO(001)/Fe(001) is much smaller and is strongly enhanced
LATIONS OF SPIN-DEPEN- MTJs by first-principles calculations [40]. for values of kǁ near IR states, also called
DENT TRANSPORT PROPER- Succedent success [41, 42] in achieving hot spots, which is be shown in Fig. 9(a),
TIES IN MGO-BASED MTJS large TMR ratio of about 200% at room (b) and (c), respectively. A huge TMR
Recently another breakthrough in MTJs is temperature in both sputtered and epitaxial effect is therefore expected due to large
the recognition of the fact that the spin-de- MTJs with MgO(001) barrier confirmed difference between the conductances in
pendent tunneling is not only determined this theoretical prediction. Now experi- parallel and antiparallel configurations.

28 AAPPS Bulletin December 2008, Vol. 18, No. 6

 Nano-scale Patterned Magnetic Tunnel Junction and Its Device Applications

4.2. Effect of Co Interlayers in Fe/MgO/

Fe MTJs
Theoretically the interfacial resonance
states in Fe/MgO/Fe MTJs can dra-
matically reduce of the TMR at zero bias
[40, 47]. Thus modification of the interface
to reduce the IR contribution has been
considered [47], for example, by insert-
ing 1 ML Ag as interlayer at the Fe/MgO
interfaces. However, Ag is not a good
choice to use as an interlayer because it has
strong spin-orbit coupling which would
generate more spin-flip scattering. A very
small mismatch of the lattice constant be- Fig. 10: s-resolved partial DOS at the Γ̄ point within the central
tween experimental bulk bcc Co (2.82 Å) Fe layer in Fe(001)/MgO/Fe7/MgO/Fe MTJs. Solid line, ma jor-
ity spin; dashed line, minority spin. Red and blue lines represent
and Fe (2.86 Å), and same majority-spin the DOS for the middle atomic layer and the one next to the
∆ 1 electron filter effect in MgO(001) middle layer in Fe7 film, respectively. n indicates the number of
for Co electrode as Fe [40, 44], makes nodes in the wave function.
Co a very good candidate for use as the
interlayer at the interface of Fe/MgO/Fe.
IR states change with the thickness of the MTJ raised the expectation of observing
For Fe(001)/Co(001)/MgO(001)/ Co layer [48]. the QW resonance effect in MgO-based
Co(001)/Fe(001) MTJs with Co interlay- MTJs. Because of the importance of the
ers, calculated transmission probabilities Also it should be noted that experimen- Fe(100) ∆1 band in MgO-based MTJs
as a function of kǁ for 2DBZ are shown tal reports of giant TMR in fully epitaxial with Fe electrodes, and the predominant
in Fig. 9(d), (e) and (f) for majority-spin -Fe(001)/Co/MgO/Fe- and -Fe(001)/Co/ s-character of the ∆1 band and its preferen-
channel, minority-spin channel and ei- MgO/Co/Fe- junctions with bcc Co(001) tial transmission in the MgO barrier layer,
ther spin channels in AP configuration, “electrodes” [50, 51] show higher TMR ra- this band is also the primary candidate for
respectively. Because only majority-spin tios compared to similar epitaxial Fe/MgO/ producing QW resonances [45]. Indeed,
∆1 states from Co and Fe/Co can be ef- Fe MTJs. Although theoretically the Co Nozaki et al. [54] observed oscillations
fectively transmitted through MgO(001) electrodes have been proved to be superior in dI /dV as a function of the bias voltage,
barrier [44], the conductance in majority- to the Fe electrodes [44], the Co layers of although the effect is still too small to sig-
spin channel, which is shown in panel (d), 0.57 nm (about 4 ML) in Refs. [50] and [51] nificantly affect the TMR. Similar to single
is dominated by the states near the Γ̄ point are more likely to act as interlayers instead barrier MTJs, first-principles theory is also
in 2DBZ, almost as same as majority-spin of electrodes. Thus reduction of the con- a critical step in understanding the QW
channel of Fe/MgO/Fe shown in panel tribution from IR states by Co interlayers resonances in double barrier junctions.
(a). However, a notable feature of both should be responsible for the enhancement
panels (e) and (f) in Fig. 9 is the strong of TMR effect in such experiments. In Fig. 10, we show the calculated s-re-
suppression of the IR state contributions solved partial DOS at the Γ̄ point within
that dominate the conductance channels 4.3. Quantum-well Resonance in Fe/ the central Fe layer in Fe(001)/MgO/Fe7/
for Fe/MgO/Fe in panels (b) and (c). The MgO/Fe/MgO/Fe Double Barrier MgO/Fe with a 7 ML thickness of the Fe
dramatic change caused by 1 ML of Co MTJs layer. We assume that all of the Fe layer
interlayer is because of the interface elec- Another interesting phenomena is the spin- moments are aligned parallel in this sys-
tronic structure and Fe-Co hybridization dependent resonant tunneling through QW tem. In Fig. 10(a) several sharp spikes in
which makes the interface resonant band states, which has been studied variously the DOS indicate the existence of major-
more dispersive, similar to the result for using both single and double barrier MTJs. ity-spin QW states derived from the ∆1
Fe/Ag(1 ML)/MgO sturcture [47]. We Earlier experiments of single barrier MTJs band of the Fe middle layer, because the
also confirmed that the IR states would [52, 53] observed very small effect that Γ̄ point the ∆1 band is primarily s-character
appear again in minority-spin channel in P was attributed [45] partly to smearing (angular momentum l = 0). Although the
configuration as well as both spin channels from the amorphous barrier layers. Recent coupling through the MgO barrier layers
for AP configuration by further increasing success [42] in achieving large TMR ra- to the electrodes makes the width of these
the Co thickness, and both the intensity of tio of over 200% at room temperature in peaks finite, the exponential decay of the
resonance effect and the positions of the Fe/MgO/Fe(100) epitaxial single barrier wave function is fast in the barrier region,

AAPPS Bulletin December 2008, Vol. 18, No. 6 29

Celebrating 20 Years of GMR − Past, Present, and Future (II)
Fig. 11: Illustration of possible structures
for spin transistors based on double barrier
MTJs with ferromagnetic (FM), non-magnetic
metal (NM) or magnetic semiconductor (SM)
middle-layers.
which sufficiently confines these states.
The wave functions of the majority spin
QW states extend throughout all seven
atomic layers of the middle Fe film. The
states with n = 0 (n is the number of nodes
in the wave function) are not shown in
Fig. 10(a) clearly, due to its greatly re-
duced height near the edge of the ∆1 band.
The minority-spin QW states, derived
from the ∆1 band of the minority Fe, are
about 1.5 eV above the Fermi energy. Thus
the minority-spin QW states are away
from the usual transport energy window
in experiments, which is consistent with
the absence of oscillatory conductance
for the antiparallel configuration in Ref.
[54]. By matching these QW states to the
oscillations found in the experimental
measurement [54], we confirmed that
these oscillations indeed were caused by
the QW states at the Γ̄ point with the ∆1
symmetry in the middle Fe layer [46].
The shifts in the QW resonances due to
the Coulomb blockade (CB) effect were
used to estimate the size of the possibly
discontinuous middle Fe layer. The CB
effect was shown to play an important
role in terms of determining the position
of a resonance as well as its sharpness.
Thus fabricating continuous middle Fe
layer to minimize the CB energy is the
key for realizing QW resonant tunneling
in experiments. Such first-principles cal-
culations can help us to seek the potential
structures for developing spin transistors
30 AAPPS Bulletin December 2008, Vol. 18, No. 6
based on double barrier MTJs with ferro- REFERENCES
magnetic (FM), non-magnetic metal (NM) [1] T. Miyazaki and N. Tezuka, “Giant
or magnetic semiconductor (SM) middle magnetic tunneling effect in Fe/Al2
free layers as shown in Fig. 11. O3/Fe junction,” J. Magn. Magn.
Mater. 139, L231 (1995).
5. CONCLUSION [2] J. S. Moodera, L. R. Kinder, T. M.
In conclusion, the nano-fabrication tech- Wong, and R. Meservey, “Large
niques, spin-dependent transport and mag- magnetoresistance at room tem-
netization current switching properties of perature in ferromagnetic thin film
the nano-scale MTJs were summarized. tunnel junctions,” Phys. Rev. Lett.
The critical current density of the order 74, 3273 (1995).
of 6 × 106 A/cm2 is sufficient to realize [3] G. A. Prinz, “Magnetotronics,” Sci-
the magnetization switching in nano-scale ence 282, 1660 (1998).
Al-O barrier-based MTJs with Co60Fe20B20 [4] S. A. Wolf, D. D. Awschalom, R.
(2.5 nm) free layer. We also presented re- A. Buhrman, J. M. Daughton, S.
cent research on spin-dependent transport von Molnár, M. L. Roukes, A.
in MgO-based MTJs using first-principles Y. Chtchelkanova, D. M. Treger,
calculations, including tunneling mecha- “Spintronics: A spin-based electron-
nism, interfacial resonance states in Fe/ ics vision for the future,” Science
MgO/Fe MTJs, and quantum-well reso- 294, 1488 (2001).
nance in double barrier MTJs. Combin- [5] K. Machida, N. Hayashi, Y. Miya-
ing with the experiments, first-principles moto, T. Tamaki, and H. Okuda,
calculations play an significant role for “Yoke-type TMR head with front-
predicting and indicating new phenomena, stacked gap for perpendicular mag-
as well as clarifying and understanding netic recording,” J. Magn. Magn.
physical mechanisms in experiments. Mater. 235, 201 (2001).
These basic investigations on the Al-O and [6] S. Mao, Y. Chen, F. Liu, X. Chen,
MgO(001) barrier-based MTJ materials B. Xu, P. Lu, M. Patwari, H. Xi, C.
and physics offers a possible new approach Chang, B. Miller, D. Menard, B.
for developing the MRAM devices with Pant, J. Loven, K. Duxstad, S. Li,
high-density, enhanced thermal stabil- Z. Zhang, A. Johnston, R. Lamber-
ity but low power consumption. Such ton, M. Gubbins, T. McLaughlin,
nano-scale MTJs together with current J. Gadbois, J. Ding, B. Cross, S.
switching mechanism can also be used Xue, and P. Ryan, “Commercial
to develop the nano-oscillators, magnetic TMR heads for hard disk drives:
logic devices, spin torque diode, and spin Characterization and extendibility
transistors in the near future. at 300 Gbit/inch2,” IEEE Trans. on
Magn. 42, 97 (2006).
ACKNOWLEDGEMENTS [7] K. Kobayashi and H. Akimoto,
The project was supported by the State “TMR film and head technologies,”
Key Project of Fundamental Research FUJISU Sci. Tech. J. 42, 39 (2006).
of Ministry of Science and Technology [8] Western Digital Corp, Company
(MOST, No. 2006CB932200), National Achieves 520 Gb/inch2 Areal Den-
Natural Science Foundation (NSFC, No. sity in Demonstration; Result of
10574156, 10874225, 60871048), and the Ongoing Technology Investments,
Knowledge Innovation Program project of TOKYO and FREMONT, Calif.
Chinese Academy of Science. X. F. Han Oct.17, 2007.
gratefully thanks the partial support of [9] K. Tanahashi et al. (Hitachi GST,
Outstanding Young Researcher Founda- USA), “Dual-segregant perpendicu-
tion (NSFC, No. 50528101), Outstanding lar recording media with graded
Innovation Team Foundation (NSFC, No. properties,” The Magnetic Record-
50721001) and Micro-fabrication Center ing Conference (TMRC) in Singa-
of Institute of Physics, CAS. pore, Session AA, 29th July 2008.

[10] J. M. Daughton, “Magnetic tunnel-
ing applied to memory,” J. Appl.
Phys. 81, 3758 (1997).
[11] R. C. Sousa, J. J. Sun, V. Soares, P.
P. Freitas, A. Kling, M. F. da Silva,
and J. C. Soares, “Large tunneling
magnetoresistance enhancement by
thermal anneal,” Appl. Phys. Lett.
73, 3288 (1998).
[12] S. Tehrani, J. M. Slaughter, E. Chen,
M. Durlam, J. Shi, and M. De-
Herrera, “Progress and Outlook for
MRAM Technology,” IEEE Trans.
on Magn. 35, 2814 (1999).
[13] S. Tehrani, B. Engel, J. M. Slaugh-
ter, E. Chen, M. DeHerrera, M. Dur-
lam, P. Naji, R. Whig, J. Janesky,
J. Calder, “Recent developments in
magnetic tunnel junction MRAM,”
IEEE Trans. on Magn. 36, 2752
(2000).
[14] B. N. Engel, J. Akerman, B. Butcher,
R. W. Dave, M. DeHerrera, M. Dur-
lam, G. Grynkewich, J. Janesky, S.
V. Pietambaram, N. D. Rizzo, J. M.
Slaughter, K. Smith, J. J. Sun, “A 4-
Mb toggle MRAM based on a novel
bit and switching method,” IEEE
Trans. on Magn. 41, 132 (2005).
[15] J. Akerman, “Toward a universal
memory,” Science 308, 508 (2005).
[16] S. D. Bader, “Colloquium: Oppor-
tunities in nanomagnetism,” Rev.
Mod. Phys. 78, 1 (2006).
[17] J. C. Slonczewski, “Current-driven
excitation of magnetic multilayers,”
J. Magn. Magn. Mater. 159, L1-L7
(1996).
[18] L. Berger, “Emission of spin waves
by a magnetic multilayer traversed
by a current,” Phys. Rev. B 54, 9353
(1996).
[19] E. B. Myers, D. C. Ralph, J. A. Ka-
tine, R. N. Louie, R. A. Buhrman,
“Current-induced switching of
domains in magnetic multilayer
devices,” Science 285, 867 (1999).
[20] J. A. Katine, F. J. Albert, and R. A.
Buhrman, “Current-driven mag-
netization reversal and spin-wave
excitations in Co/Cu/Co pillars,”
Phys. Rev. Lett. 84, 3149 (2000).
[21] F. J. Albert, J. A. Katine, R. A.
Nano-scale Patterned Magnetic Tunnel Junction and Its Device Applications
Buhrman, and D. C. Ralph, “Spin-
polarized current switching of a Co
thin film nanomagnet,” Appl. Phys.
Lett. 77, 3809 (2000).
[22] Y. Huai, F. Albert, P. Nguyen, M.
Pakala, and T. Valet, “Observation
of spin-transfer switching in deep
submicron-sized and low-resistance
magnetic tunnel junctions,” Appl.
Phys. Lett. 84, 3118-3120 (2004).
[23] I. N. Krivorotov, N. C. Emley, J. C.
Sankey, S. I. Kiselev, D. C. Ralph,
R. A. Buhrman, “Time-domain mea-
surements of nanomagnet dynamics
driven by spin-transfer torques,”
Science 307, 228-231 (2005).
[24] X. F. Han, H. X. Wei, Z. L. Peng, H.
D. Yang, J. F. Feng, G. X. Du, Z. B.
Sun, L. X. Jiang, Q. H. Qin, M. Ma,
Y. Wang, Z. C. Wen, D. P. Liu, and
W. S. Zhan, “Fabrication of MRAM
based on nanoring-type magnetic
tunnel junctions and spin-polarized
current driving,” the 2007 March
Meeting of the America Physics
Society, Denver, US, March 4-11,
2007; “A novel design and fabri-
cation of MRAM based on nano-
ring-type magnetic tunnel junctions
(Letter),” J. Mater. Sci. & Tech 23,
304-306 (2007).
[25] X. F. Han, Z. C. Wen, and H. X.
Wei, “Nanoring MTJ and its ap-
plication in MRAM demo devices
with spinpolarized current switch-
ing (Invited),” J. Appl. Phys. 103,
07E933 (2008); H. X. Wei, J. He, Z.
C. Wen, X. F. Han, W. S. Zhan, and
S. Zhang, “Effects of the current on
the nanoscale ring-shaped magnetic
tunnel junctions,” Phys. Rev. B 77,
134432 (2008).
[26] T. Kawahara, R. Takemura, K.
Miura, J. Hayakawa, S. Ikeda, Y.
M. Lee, R. Sasaki, Y. Goto, K. Ito,
T. Meguro, F. Matsukura, H. Taka-
hashi, H. Matsuoka, and H. Ohno,
“2 Mb SPRAM (SPin-Transfer
Torque RAM) with bit-by-bit bi-
directional current write and paral-
lelizing-direction current read,”
IEEE J. Solid-State Circuits 43,
109 (2008).
AAPPS Bulletin December 2008, Vol. 18, No. 6
[27] M. Tondra, J. M. Daughton, D.
Wang, R. S. Beech, A. Fink, and J.
A. Taylor, “Picotesla field sensor
design using spin-dependent tun-
neling devices,” J. Appl. Phys 83,
6688 (1998).
[28] M. Pannetier, C. Fermon, G. Le
Goff, J. Simola, E. Kerr, “Femtotes-
la magnetic field measurement with
magnetoresistive sensors,” Science
304, 1648 (2003).
[29] B. D. Schrag and Gang Xiao, “Sub-
micron electrical current density
imaging of embedded microstruc-
tures,” Appl. Phys. Lett. 82, 3272
(2003).
[30] M. Piedade, L. A. Sousa, T. M. de
Almeida, J. Germano, B. D. da
Costa, J. M. Lemos, P. P. Freitas,
H. A. Ferreira, and F. A. Cardoso,
“A new hand-held microsystem
architecture for biological analysis,”
IEEE Trans. Circuits Syst. I: Regul.
Pap. 53, 2384 (2006).
[31] W. Shen, B. D. Schrag, M. J. Carter,
and G. Xiao, “Quantitative detec-
tion of DNA labeled with magnetic
nanoparticles using arrays of MgO-
based magnetic tunnel junction sen-
sors,” Appl. Phys. Lett. 93, 033903
(2008).
[32] A. Ney, C. Pampuch, R. Koch, and
K. H. Ploog, “Programmable com-
puting with a single magnetoresis-
tive element,” Nature 425, 485-487
(2003).
[33] S. I. Kiselev, J. C. Sankey, I. N. Krivo-
rotov, N. C. Emley, R. J. Schoelkopf,
R. A. Buhrman, and D. C. Ralph,
“Microwave oscillations of a nano-
magnet driven by a spin-polarized
current,” Nature 425, 380 (2003).
[34] L. Thomas, M. Hayashi, X. Jiang et
al., “Oscillatory dependence of cur-
rent-driven magnetic domain wall
motion on current pulse length,”
Nature 443, 197-200 (2006).
[35] A. V. Nazarov, H. M. Olson, H. Cho,
K. Nikolaev, Z. Gao, S. Stokes, and
B. B. Pant, “Spin transfer stimulated
microwave emission in MgO mag-
netic tunnel junctions,” Appl. Phys.
Lett. 88, 162504 (2006).
31
Celebrating 20 Years of GMR − Past, Present, and Future (II)
[36] S. Petit, C. Baraduc, C. Thirion, U.
Ebels, Y. Liu, M. Li, P. Wang, and
B. Dieny, “Spin-torque influence on
the high-frequency magnetization
fluctuations in magnetic unnel junc-
tions,” Phys. Rev. Lett. 98, 077203
(2007).
[37] A. A. Tulapurkar, Y. Suzuki, A. Fu-
kushima, H. Kubota, H. Maehara,
K. Tsunekawa, D. D. Djayaprawira,
N. Watanabe, and S. Yuasa, “Spin-
torque diode effect in magnetic
tunnel junctions,” Nature 438, 339
(2005).
[38] Z. M. Zeng, X. F. Han, W. S. Zhan,
Y. Wang, Z. Zhang, and S. Zhang,
“Oscillatory tunnel magnetoresis-
tance in double barrier magnetic
tunnel junctions,” Phys. Rev. B
72, 054419 (2005); Z. M. Zeng,
X. F. Han, G. X. Du, W. S. Zhan,
Y. Wang, Z. Zhang, “Magnetore-
sistance effect of double barrier
magnetic tunnel junction applied
in spin transistors,” Acta Physica
Sinica 54, 3351-06 (2005).
[39] J. H. Lee, K.-I. Jun, K.-H. Shin, S.
Y. Park, J. K. Hong, K. Rhie, and
B. C. Lee, “Large magnetocurrents
in double-barrier tunneling transis-
tors,” J. Magn. Magn. Mater. 286,
138-141 (2005).
[40] W. H. Butler, X.-G. Zhang, T. C.
Schulthess, and J. M. MacLaren,
“Spin-dependent tunneling conduc-
tance of Fe–MgO–Fe sandwiches,”
Phys. Rev. B 63, 054416 (2001).
[41] S. S. P. Parkin, C. Kaiser, A. Pan-
chula, P. M. Rice, B. Hughes, M.
Samant, and S.-H. Yang, “Giant
tunnelling magnetoresistance at
room temperature with MgO(100)
tunnel barriers,” Nat. Mater. 3, 862
(2004).
[42] S. Yuasa, T. Nagahama, A. Fukushi-
ma, Y. Suzuki, and K. Ando, “Giant
room-temperature magnetoresis-
tance in single-crystal Fe/MgO/Fe
magnetic tunnel junctions,” Nat.
Mater. 3, 868 (2004).
[43] Y. M. Lee, J. Hayakawa, S. Ikeda, F.
Matsukura, and H. Ohno, “Effect of
electrode composition on the tunnel
32 AAPPS Bulletin December 2008, Vol. 18, No. 6
magnetoresistance of pseudo-spin- [52] S. Yuasa, T. Nagahama, and Y.
valve magnetic tunnel junction with Suzuki, “Spin-polarized resonant
a MgO tunnel barrier,” Appl. Phys. tunneling in magnetic tunnel junc-
Lett. 90, 212507 (2007). tions,” Science 297, 234 (2002).
[44] X.-G. Zhang and W. H. Butler, [53] T. Nagahama, S. Yuasa, Y. Suzuki,
“Large magnetoresis-tance in bcc and E. Tamura, “Quantum size ef-
Co/MgO/Co and FeCo/MgO/FeCo fect in magnetic tunnel junctions
tunnel junctions,” Phys. Rev. B 70, with ultrathin Fe(001) electrodes,”
172407 (2004). J. Appl. Phys. 91, 7035 (2002).
[45] Z.-Y. Lu, X.-G. Zhang, and Sokrates [54] T. Nozaki, N. Tezuka, and K.
T. Pantelides, “Spin-dependent Inomata, “Quantum oscillation of
resonant tunneling through quan- the tunneling conductance in fully
tum-well states in magnetic metal- epitaxial double barrier magnetic
lic thin films,” Phys. Rev. Lett. 94, tunnel junctions,” Phys. Rev. Lett.
207210 (2005). 96, 027208 (2006).
[46] Y. Wang, Z.-Y Lu, X.-G. Zhang,
and X. F. Han, “First-principles
theory of quantum well resonance
in double barrier magnetic tunnel
junctions,” Phys. Rev. Lett. 97,
087210 (2006).
[47] K. D. Belashchenko, J. Velev, and
E. Y. Tsymbal, “Effect of interface
states on spin-dependent tunneling
in Fe/MgO/Fe tunnel junctions,”
Phys. Rev. B 72, 140404 (2005).
[48] Y. Wang, X. F. Han, and X.-G.
Zhang, “Effect of Co interlayers in
Fe/MgO/Fe magnetic tunnel junc-
tions,” Appl. Phys. Lett. 93, 172501
(2008).
[49] J. M. MacLaren, X.-G. Zhang,
W. H. Butler, and Xindong Wang,
“Layer KKR approach to Bloch-
wave transmission and reflection:
Application to spin-dependent
tunneling,” Phys. Rev. B 59, 5470
(1999).
[50] S. Yuasa, A. Fukushima, H. Kubota,
Y. Suzuki, and K. Ando, “Giant
tunneling magnetoresistance up to
410% at room temperature in fully
epitaxial Co/MgO/Co magnetic
tunnel junctions with bcc Co(001)
electrodes,” Appl. Phys. Lett. 89,
042505 (2006).
[51] S. Yuasa, T. Katayama, T. Naga-
hama, A. Fukushima, H. Kubota,
Y. Suzuki, and K. Ando, “Giant tun-
neling magnetoresistance in fully
epitaxial body-centered-cubic Co/
MgO/Fe magnetic tunnel junctions,”
Appl. Phys. Lett. 87, 222508 (2005).