AOD4186

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD4186 combines advanced trench MOSFET

technology with a low resistance package to provide VDS (V) =40V
extremely low RDS(ON). This device is ideal for low ID = 35A (VGS = 10V)
voltage inverter applications.
RDS(ON) < 15mΩ (VGS = 10V)
RDS(ON) < 19mΩ (VGS = 4.5V)

- RoHS Compliant 100% UIS Tested!

- Halogen Free 100% R g Tested!

TO-252
D-PAK Bottom View
Top View D
D

G
S G
S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 35
ID
Current G TC=100°C 27 A
Pulsed Drain Current C IDM 70
Continuous Drain TA=25°C 10
IDSM A
Current TA=70°C 8
Avalanche Current C IAR 24 A
Repetitive avalanche energy L=0.1mH C EAR 29 mJ
TC=25°C 50
B PD W
Power Dissipation TC=100°C 25
TA=25°C 2.5
PDSM W
Power Dissipation A TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16.7 25 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 40 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 2.5 3 °C/W

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AOD4186

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 V
VDS=40V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 2.2 2.7 V
ID(ON) On state drain current VGS=10V, VDS=5V 100 A
VGS=10V, ID=20A 12.4 15
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 20 24
VGS=4.5V, ID=15A 14.5 19 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 60 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 60 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 780 980 1200 pF
Coss Output Capacitance VGS=0V, VDS=20V, f=1MHz 90 130 170 pF
Crss Reverse Transfer Capacitance 48 80 110 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.9 3.8 5.7 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 13.5 17 20 nC
Qg(4.5V) Total Gate Charge 7 9 11 nC
VGS=10V, VDS=20V, ID=20A
Qgs Gate Source Charge 2 2.5 3 nC
Qgd Gate Drain Charge 2.7 4.5 6.3 nC
tD(on) Turn-On DelayTime 6 ns
tr Turn-On Rise Time VGS=10V, VDS=20V, RL=1.0Ω, 12 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 26 ns
tf Turn-Off Fall Time 7 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 9 12 15 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 24 31 38 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Rev 1 : May-09
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD4186

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
10V 6V
VDS=5V
4.5V
60 60
4V
ID (A)

ID(A)
40 40

125°C
20 20
25°C
VGS=3.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

20 Normalized On-Resistance 2

18 1.8
VGS=10V
VGS=4.5V ID=20A
16 1.6
RDS(ON) (mΩ)

17
14 1.4
5
VGS=10V 2
12 1.2
VGS=4.5V10
10 1 ID=15A

8 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction Temperature
18
Gate Voltage (Note E)
(Note E)

40 1.0E+02
ID=20A
35 1.0E+01
40
1.0E+00
30
RDS(ON) (mΩ)

1.0E-01 125°C
IS (A)

25 125°C
1.0E-02
25°C
20
1.0E-03

15 25°C
1.0E-04

10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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AOD4186

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500

VDS=20V
8 ID=20A 1200
Ciss

Capacitance (pF)
VGS (Volts)

6 900

4 600
Coss

2 300

Crss
0 0
0 5 10 15 20 0 10 20 30 40
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 200
10µs
RDS(ON) 10µs 160
limited
10.0
Power (W)
ID (Amps)

100µs
120 17
TJ(Max)=175°C
DC TC=25°C 5
1ms 80 2
1.0 10ms 10
TJ(Max)=175°C
TC=25°C 40

0.1 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=3°C/W 40
1

0.1 PD
Single Pulse
Ton
T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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AOD4186

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 60
IAR(A) Peak Avalanche Current

50

Power Dissipation (W)

40
TA=25°C
30
TA=100°C
20
TA=150°C

10
TA=125°C
10 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

60 10000

50 TA=25°C
1000
Current rating ID(A)

40
17
Power (W)

30 100 5
2
20 10
10
10

0 1
0 25 50 75 100 125 150 175 0.00001 0.001 0.1 10 0 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

1 RθJA=50°C/W 40

0.1

Single Pulse PD
0.01

Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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AOD4186

Gate Charge Test Circuit & W aveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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