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AOD4189 P-Channel Enhancement Mode Field Effect Transistor: Features General Description
AOD4189 P-Channel Enhancement Mode Field Effect Transistor: Features General Description
The AOD4189 uses advanced trench technology and VDS (V) = -40V
design to provide excellent RDS(ON) with low gate ID = -40A (V GS = -10V)
charge. With the excellent thermal resistance of the RDS(ON) < 22mΩ (VGS = -10V)
DPAK package, this device is well suited for high RDS(ON) < 29mΩ (VGS = -4.5V)
current load applications.
100% UIS Tested!
-RoHS Compliant
100% Rg Tested!
-Halogen Free*
TO-252
D-PAK Bottom View
Top View D
D
S G
S
G S
Thermal Characteristics
Parameter Symbol Typ Max Units
A,G
Maximum Junction-to-Ambient t ≤ 10s 15 20 °C/W
A,G RθJA
Maximum Junction-to-Ambient Steady-State 41 50 °C/W
Maximum Junction-to-Case D,F Steady-State RθJC 2 2.4 °C/W
50 50
-10V -4.5V VDS=-5V
-4.0V 40
40
-6.0V
30 30
-ID (A)
-ID(A)
VGS=-3.5V
20 20
10 10 125°C
25°C
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics
30 2
28
Normalized On-Resistance
1.8 VGS=-10V
VGS=-4.5V ID=-12A
26
1.6
RDS(ON) (mΩ )
24 VGS=-4.5V
1.4 ID=-8A
22
1.2
20
VGS=-10V
18 1
16 0.8
0 10 20 30 40 -50 -25 0 25 50 75 100 125 150 175 200
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature
55 100
ID=-12A 150
50 10
45 1 mJ
40
RDS(ON) (mΩ )
0.1
-IS (A)
35 125°C
125°C 0.01
30 25°C
0.001
25
25°C
0.0001
20
15 0.00001
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
10 2800
VDS=-20V
ID=-12A 2400
8 Ciss
2000
Capacitance (pF)
-VGS (Volts)
6 1600
1200
4
800
2 Crss
400 Coss
0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100 10000
TJ(Max)=175°C
TC=25°C
10µs
1000
100µs
Power (W)
-ID (Amps)
10
RDS(ON)
limited
100
1ms
TJ(Max)=175°C 10ms
TC=25°C DC
1 10
1 10 100 0.00001 0.0001 0.001 0.01 0.1 1
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)
10 150
D=Ton/T In descending order
TJ,PK=Tc+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ Jc Normalized Transient
RθJC=2.4°C/W mJ
Thermal Resistance
0.1 PD
Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100 70
-IA, Peak Avalanche Current (A)
60
40
10
30
20
10
1
0.01 0.1 1 10 100 1000 0
0 25 50 75 100 125 150 175
Time in Avalache, t A (s) TCASE (°C)
Figure 12: Single Pulse Avalanche Capability Figure 13: Power De-rating (Note B)
50 10000
TJ(Max)=150°C
TA=25°C
40
Current rating -ID (A)
1000
30
Power (W)
100
20
10 10
0
1
0 25 50 75 100 125 150 175
1E-04 0.001 0.01 0.1 1 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note G)
10
D=Ton/T In descending order 150
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
RθJA=50°C/W
Thermal Resistance
0.1
PD
0.01
Ton
Single Pulse T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Ig
Charge
td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+
Vgs 10%
Vds
Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds