Elektrik-Elektronik Mühendisliği Bölümü

EEE 413E
Yarı İletken Devre Teknolojisi
• Dr.Öğr. Üyesi Emrah DEMİR

• Doktora: Dresden Teknik Üniversitesi, Kimya

Bölümü, Dresden, Almanya, 2015

Çalışma Alanı:
• Şarj edilebilir batarya teknolojileri (sodyum-iyon,
lityum-kükürt ve lityum-iyon bataryalar)
• Bataryalar için elektrot malzemeleri geliştirilmesi
• Karbon nanotüp modifikasyonu
• Kuantum noktalar
• Kontrollü polimerizasyon teknikleri
• Hidrotermal karbonizasyon
 EEM 413E
Yarı İletken Devre Teknolojisi

Ders İçeriği:
Dersin amacı:
- Yarı İletken pulların hazırlanması
- Elektronik devre elemanlarının ve karmaşık entegre
- Yarı iletken üzerine yalıtkan film
devrelerin tasarımına giriş yapmak.
- Fotolitografi
- Geçmiş ve gelecekte yarı iletken teknolojisindeki
- Katkı maddeleri ve katkılama
gelişmeleri vermek.
- Metalizasyon, ana bağlantı ve paketleme
- Entegre devre elemanları ve yapım teknikleri
- Ticeri devrelerin entegrasyonu
- Yarı iletken mikro teknolojini geleceği

Dersin sonunda:
-Her bir öğrenciden devre tasarım ve fabrikasyon işlem
basamaklarını açıklayabilme kabiliyeti
beklenilmektedir.
Kaynaklar:
• J. Allison, Electronic Integrated Circuits, McGraw-Hill
• D. V. Morgan and K. Board, An introduction to semiconductor
Microtechnology, John Wiley and Sons.
• B. G. Streetman and S. Banerjee, Solid State Electronic Devices,
Prentice Hall Series.
• Fabrication Engineering at the Micro and Nanoscale, Stephan A.
Campbell, Oxford University Press.
Değerlendirme:

Ara Sınavlar:
Sınav 1 : %20
Sınav 2 : %20
Proje: %20

Final : %40
Giriş : Enerji Bant Yapisi
• Bütün katılar kendisine has enerji bant yapısına sahiptir.
• Bir materyalin iletken olabilmesi için serbest elektronlarının ve boş enerji durumlarının olması gerekir.
Metalller
• Metaller serbest elektronlara ve kısmen dolmuş olan valans bandına sahiptirler. Bu yüzden iletkenlikleri
yüksektir. Metallerde iletim bandı ile valans bandı çakışıktır.
• Metaldeki bir elektronun iletime katkı yapabilmesi için boş olan bir enerji durumuna geçmesi
gerekmektedir.
• Metallerde bu boş olan enerji durumları dolu enerji durumlarına çok yakındır.

• Yalıtkanlar:
• Valans bandı ile İletim bandı arasında mesafe (>4eV) yani
yasaklı bant aralığı vardır. Elektronların iletime katkı
yapabilmesi için bu enerji bandını aşması gerekir fakat bu
enerji bantı aralığı çok yüksektir.
Yarıiletkenler:
• Yarı iletkenlerde enerji bant aralığı(2eV<)
• Metallerle yalıtkanlar arasındadır.
Kimyasal Bağlar: İyonik Bağlar

1- İyonik Bağlar
2- Metalik Bağlar
3- Kovalent Bağlar

Kovalent Bağlar Metalik Bağlar

http://chemistry.tutorvista.com/inorganic-chemistry/ionic-and-covalent-bonds.html Creative Commons Attribution ShareAlike License v. 2.5:

Silikon atomu

N type katkı yapmak için Si atomunun son yörüngesinde ihtiyacından fazla elektrona sahip bir
atomla katkılanırsa, fazla elektronlar malzemeyi n katkılı hale getiirecektir. Mesela 5-değerli
valans elektronlarına sahip Arsenik, fosfor ve Bizmut gibi atomlarla katkılanırsa n tipi yarı iletk
elde edileceltir.
Direkt ve direkt olmayan elektron geçişleri. Optiksel soğurum
Yarı iletken elektronik elemanı : PN Diyot

N bölgesinde daha çok serbest elektron vardır. Bunlar akım taşıyıcısı olarak görev yaparar ve ‘çoğunluk akım
taşıyıcısı’ olarak adlandırılırlar.

Bu bölgede ayrıca ısı etkisi ile oluşturulan birkaç hole bulunur. Bunlara ’azınlık akım taşıyıcıları adı verilir. Benzer
şekilde P kısmı da düşünülür.
İleri yönde polarlama (Forward Bias)
Ters Yönde polarlama (Reverse bias)
İDEAL Diyot ve Gerçekteki Diyot

Doğru polarlama altında kapalı bir anahtar gibi kısa devre değildir. Bir miktar direnci vardır. Bu nedenle bir miktar gerilim
düşümü vardır. Bu gerilime diyot öngerilimi denir ve VF ile sembolizde edilir. Bu gerilim silisyumda 0.7 V, Germanyumda
0.3V civarındadır. Dogru polarlama da IF=(VDD-VD)/R.
Ters yönde polarmada ise, açık bir miktar akım akar. Bu akıma sızıntı akımı denir ve IR ile sembolize edilir.
Yarı iletken Devre elemanlarının tarihsel gelişimi
1833: First Semiconductor Effect is Recorded
Michael Faraday describes the "extraordinary case" of his
discovery of electrical conduction increasing with temperature
in silver sulfide crystals. This is the opposite to that observed in
copper and other metals.
1874: Semiconductor Point-Contact Rectifier Effect is
Discovered
In the first written description of a semiconductor diode,
Ferdinand Braun notes that current flows freely in only one
direction at the contact between a metal point and a galena
crystal.
1901: Semiconductor Rectifiers Patented as "Cat's
Whisker" Detectors
Radio pioneer Jagadis Chandra Bose patents the use of a
semiconductor crystal rectifier for detecting radio waves.
1926: Field Effect Semiconductor Device Concepts
Patented
Julius Lilienfeld files a patent describing a three-electrode
amplifying device based on the semiconducting properties of
copper sulfide. Attempts to build such a device continue
through the 1930s.
1931: "The Theory Of Electronic Semi-Conductors" is
Published
Alan Wilson uses quantum mechanics to explain basic
semiconductor properties. Seven years later Boris Davydov
(USSR), Nevill Mott (UK), and Walter Schottky (Germany)
independently explain rectification.
1940: Discovery of the p-n Junction
Russell Ohl discovers the p-n junction and photovoltaic
effects in silicon that lead to the development of junction
transistors and solar cells.
1941: Semiconductor diode rectifiers serve in WW II
Techniques for producing high purity germanium and
silicon crystals are developed for wartime radar
microwave detectors.
1947: Invention of the Point-Contact Transistor
John Bardeen & Walter Brattain achieve transistor action in a
germanium point-contact device in December 1947.
1948: The European Transistor Invention
Herbert Mataré & Heinrich Welker independently create a
germanium point-contact transistor in France.
Yarı iletken Devre elemanlarının tarihsel gelişimi
1948: Conception of the Junction Transistor
William Shockley conceives an improved transistor
structure based on a theoretical understanding of the p-n
junction effect.
1951: Development of Zone Refining
William Pfann and Henry Theurer develop zone refining
techniques for production of ultra-pure semiconductor
materials.
1951: First Grown-Junction Transistors Fabricated
Gordon Teal grows large single crystals of germanium and
works with Morgan Sparks to fabricate an n-p-n junction
transistor.
1952: Transistorized Consumer Products Appear
Semiconductors appear in battery-powered hearing aids
and pocket radios where consumers are willing to pay a
premium for portability and low power consumption.
1952: Bell Labs Licenses Transistor Technology
Bell Labs technology symposia and licensing of transistor
patents encourages semiconductor development.
1953: Transistorized Computers Emerge
A transistorized computer prototype demonstrates the
small size and low-power advantages of semiconductors
compared to vacuum tubes.
1954: Diffusion Process Developed for Transistors
Following the production of solar cells using high-
temperature diffusion methods, Charles Lee and Morris
Tanenbaum apply the technique to fabricate high-speed
transistors.
1954: Silicon Transistors Offer Superior Operating
Characteristics
Morris Tanenbaum fabricates the first silicon transistor
at Bell Labs but Texas Instruments' engineers build and
market the first commercial devices.
1955: Photolithography Techniques Are Used to Make
Silicon Devices
Jules Andrus and Walter Bond adapt photoengraving
techniques from printing technology to enable precise etching
of diffusion "windows" in silicon wafers.
Yarı iletken Devre elemanlarının tarihsel gelişimi
1955: Development of Oxide Masking
Carl Frosch and Lincoln Derick grow a silicon dioxide film
on wafers to protect their surface and allow controlled
diffusion into the underlying silicon.
1956: Silicon Comes to Silicon Valley
Shockley Semiconductor Laboratory develops Northern
California's first prototype silicon devices while training
young engineers and scientists for the future Silicon Valley.
1958: All Semiconductor "Solid Circuit" is
Demonstrated
ack Kilby produces a microcircuit with both active and
passive components fabricated from semiconductor
material.
1958: Silicon Mesa Transistors Enter Commercial
Production
Fairchild Semiconductor produces double-diffused silicon
mesa transistors to meet demanding aerospace
applications.
1958: Tunnel Diode Promises a High-Speed
Semiconductor Switch
Leo Esaki's novel device is an example of many celebrated
semiconductor breakthroughs that do not sustain their
early promise as they are overtaken by competing
technologies.
1959: Practical Monolithic Integrated Circuit
Concept Patented
Robert Noyce builds on Jean Hoerni's planar process to
patent a monolithic integrated circuit structure that can
be manufactured in high volume.
1959: Invention of the "Planar" Manufacturing
Process
Jean Hoerni develops the planar process to solve
reliability problems of the mesa transistor, thereby
revolutionizing semiconductor manufacturing.
1960: Epitaxial Deposition Process Enhances
Transistor Performance
Development of thin-film crystal-growth process leads to
transistors with high switching speeds.
Yarı iletken Devre elemanlarının tarihsel gelişimi
1960: Metal Oxide Semiconductor (MOS) Transistor
Demonstrated
ohn Atalla and Dawon Kahng fabricate working transistors
and demonstrate the first successful MOS field-effect
amplifier.
1960: First Planar Integrated Circuit is Fabricated
Jay Last leads development of the first commercial IC
based on Hoerni's planar process and Noyce's monolithic
approach.
1961: Dedicated Semiconductor Test Equipment
Enters Commercial Market
Semiconductor and independent vendors build dedicated
test equipment for high-throughput manufacturing.
1961: Silicon Transistor Exceeds Germanium Speed
Computer architect Seymour Cray funds development of
the first silicon device to meet the performance demands
of the world's fastest machine.
1962: Aerospace systems are first the applications for
ICs in computers
The size, weight, and reduced power consumption of
integrated circuits compared to discrete transistor designs
justify their higher cost in military and aerospace systems.
1963: Standard Logic IC Families Introduced
Diode Transistor Logic (DTL) families create a high-volume
market for digital ICs but speed, cost, and density
advantages establish Transistor Transistor Logic (TTL) as
the most popular standard logic configuration by the late
1960s.
1963: Complementary MOS Circuit Configuration is
Invented
Frank Wanlass invents the lowest power logic
configuration but performance limitations impede early
acceptance of today's dominant manufacturing
technology.
1964: First Commercial MOS IC Introduced
General Microelectronics uses a Metal-Oxide-
Semiconductor (MOS) process to pack more transistors on
a chip than bipolar ICs and builds the first calculator chip
set using the technology.
Yarı iletken Devre elemanlarının tarihsel gelişimi
1964: The First Widely-Used Analog Integrated Circuit
is Introduced
David Talbert and Robert Widlar at Fairchild kick-start a
major industry sector by creating commercially successful
ICs for analog applications.
1964: Hybrid Microcircuits Reach Peak Production
Volumes
Multi-chip SLT packaging technology developed for the IBM
System/360 computer family enters mass production.
1965: Semiconductor Read-Only-Memory Chips Appear
Semiconductor read-only-memories (ROMs) offer high
density and low cost per bit.
1965: Package is the First to Accommodate System
Design Considerations
The Dual In-line Package (DIP) format significantly eases
printed circuit board layout and reduces computer assembly
cost.
1965: Mainframe Computers Employ Ics
Large computer manufacturers announce machines based
on custom and special purpose integrated circuits.
1966: Computer Aided Design Tools Developed for Ics
IBM engineers pioneer computer-aided electronic design
automation tools for reducing errors and speeding design
time.
1966: Semiconductor RAMs Serve High-speed Storage
Needs
Bipolar RAMs enter the computer market for high-
performance scratchpad and cache memory applications.
1967: Application Specific Integrated Circuits employ
Computer-Aided Design
Automated design tools reduce the development
engineering time to design and deliver complex custom
integrated circuits.
1967: Turnkey Equipment Suppliers Change Industry
Dynamics
Third-party vendors develop specialized knowledge of
semiconductor fabrication and emerge as vendors of process
technology and turnkey manufacturing facilities.
Yarı iletken Devre elemanlarının tarihsel gelişimi
1968: Silicon Gate Technology Developed for Ics
Federico Faggin and Tom Klein improve the reliability,
packing density, and speed of MOS ICs with a silicon-gate
structure. Faggin designs the first commercial silicon-gate
IC – the Fairchild 3708.
1968: Dedicated Current Source IC Integrates a Data
Conversion Function
The precision manufacturing requirements of combining
analog and digital capability on one chip made them one of
the last product areas to yield to monolithic solutions.
1969: Schottky-Barrier Diode Doubles the Speed of TTL
Memory & Logic
Design innovation enhances speed and lowers power
consumption of the industry standard 64-bit TTL RAM
architecture. Is quickly applied to new bipolar logic and
memory designs.
1970: MOS Dynamic RAM Competes with Magnetic
Core Memory on Price
The Intel i1103 Dynamic RAM (DRAM) presents the first
significant semiconductor challenge to magnetic cores as
the primary form of computer memory.
1971: Microprocessor Integrates CPU Function onto a
Single Chip
Silicon-gate process technology and design advances squeeze
computer central processing units (CPU) onto single chips.
1971: Reusable Programmable ROM Introduces Iterative
Design Flexibility
Dov Froman's ultra-violet light erasable ROM design offers an
important design tool for the rapid development of
microprocessor-based systems, called an erasable,
programmable read-only-memory or EPROM.
1974: Scaling of IC Process Design Rules Quantified
IBM researcher Robert Dennard's paper on process scaling on
MOS memories accelerates a global race to shrink physical
dimensions and manufacture ever more complex integrated
circuits.
1974: General-Purpose Microcontroller Family is
Announced
A single-chip calculator design emerges as the TMS 1000
micro-control unit or MCU, a concept that spawned families
of general-purpose digital workhorses that power the tools
1974: Digital Watch is First System-On-Chip
Integrated Circuit
The Microma liquid crystal display (LCD) digital watch is the
first product to integrate a complete electronic system onto
a single silicon chip, called a System-On-Chip or SOC.
1978: PAL User-Programmable Logic Devices
Introduced
John Birkner and H. T. Chua of Monolithic Memories
develop easy-to-use programmable array logic (PAL) devices
and tools for fast prototyping custom logic functions.
1979: Single Chip Digital Signal Processor Introduced
Bell Labs' single-chip DSP-1 Digital Signal Processor device
architecture is optimized for electronic switching systems.

http://www.computerhistory.org/siliconengine/timeline/
Geleceğin Teknolojileri IBM CNT transistor
IBM: Commercial Nanotube Transistors Are Coming
Soon
Chips made with nanotube transistors, which could be five
times faster, should be ready around 2020, says IBM.
Chip test: Each chip on this wafer has 10,000
nanotube transistors on it. IBM hopes to be
able to put billions of the devices on a single
chip soon after 2020.

a scan of IBM Research Alliance’s 5nm transistor, built using an

industry-first process to stack silicon nanosheets as the device
structure – achieving a scale of 30 billion switches on a fingernail-sized
chip that will deliver significant power and performance enhancements
over today’s state-of-the-art 10nm chips. (Credit: IBM)

High-performance top-gated carbon nanotube field-effect

transistors (CNT FETs) with a gate length of 5 nanometers can
be fabricated. Schematic diagram showing the structure
of a GC CNT FET. Credit: (c) Science (2017). DOI:
Lithografi Tekniklerinin karşılaştırılması
Focused Ion Beam Litografi

The World’s Smallest Snowman stands less than 3

microns tall. The snowman was fabricated from three 0.9
micron silica spheres stacked with the use of electron
beam lithography. The eyes and mouth were cut with a
focused ion beam while the arms and nose were sculpted
with platinum.
Ders Akışı
1- Yarı iletken malzemelerin büyütülmesi ve hazırlanması
- Kristallerin saflaştırılması
- Büyütülmesi
- Büyütme metodları
7- Entegre devre elemanlarının elektriksel izolasyonu
2- Temel işlemler:
- Kristal kesme
8- Kollektör katkılı izolasyon.
- Oksidasyon
- Silikon kapı işleme
- Difüzyon
- Yük bağlantı devreleri
-Pencere açma
- Epitaksi
9- Metalizasyon, arabağlantı ve yapıştırma
3- Oksidasyon
4- - Katkılama işlemi
10- Entegre Devre tasarımı
- Tip değiştirme
5-
11- Yarı iletken mikro teknolojinin gelecegine dair
- Difüzyon
- Epitaksi
- İyon ekme
6- Elektronik komponentlerin yapısı ve prosesi