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Cau Kien Dien Tu
Cau Kien Dien Tu
B MN IN T
CU KIN IN T
A NNG 1998
CU KIN IN T
CHNG 1.
VT L BN DN
1.1 VT LIU IN T :
Cc vt liu in t thng c phn chia thnh ba loi: Cc vt liu cch in, dn in v vt
liu bn dn.
Cht cch in l loi vt liu thng c dn in rt km di tc dng ca mt ngun
in p t vo n.
Cht dn in l loi vt liu c th to ra dng in tch khi c ngun in p t ngang qua
hai u vt liu.
Cht bn dn l mt loi vt liu c dn in khong gia ca cht dn in v cht cch
in
Thng s chnh c dng phn bit 3 loi vt liu l in tr sut , c n v l .cm.
Nh ch r bng 1.1, cc cht cch in c in tr sut ln hn 10 5 .cm . v d: kim cng
[diamond] l mt trong nhng cht cch in tuyt vi, n c in tr sut rt ln: 1016 .cm .
Ngc li, ng nguyn cht [pure copper] l mt cht dn in tt, c in tr sut ch l
3x10 6 .cm .
Cc vt liu bn dn chim ton b khong in tr sut gia cht cch in v cht dn in;
ngoi ra, in tr sut ca vt liu bn dn c th c iu chnh bng cch b sung thm cc
nguyn t tp cht khc vo tinh th bn dn.
Bng 1.1, cng cho bit cc gi tr in tr sut in hnh ca 3 loi vt liu c bn. Mc d
trong thc t chng ta lm quen vi tnh dn in ca ng (ng nguyn cht) v tnh
cch in ca mica, nhng cc c tnh in ca cc vt liu bn dn nh Gemanium (Ge) v
Silicon (Si) c th cn mi l, d nhin, vt liu bn dn khng ch c hai loi vt liu ny,
nhng y l 2 loi vt liu c s dng nhiu nht trong s pht trin ca dng c bn dn.
BNG 1.1 Phn loi c tnh dn in ca cc vt liu bng cht rn
Cht dn in
Cht bn dn
Cht cch in
< 10 3 .cm
= 3x10 6 .cm
= 50 .cm (germanium)
10 5 .cm <
CHNG 1: VT L BN DN
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Bng 1.3 Gii thiu mt s cht bn dn thng c s dng nhiu nht ch to cc linh
kin bn dn.
BNG 1.3 Cc vt liu bn dn
Cht bn dn
Cht bn dn
EG (eV)
E G (e
V)
Kim cng (diamond)
5,47
Gallium arsenide
1,42
Silicon
1,12
Indium phosphide
1,45
Germanium
0,66
Boron nitride
7,50
Thic (tin)
0,082
Silicon carbide
3,00
Cadimium selenide
1,70
Kim cng v Boron Nitride l nhng cht cch in tuyt vi nhit phng, nhng chng
cng nh Silicon Carbide c th c dng nh nhng cht bn dn nhit rt cao ( 600o C ).
Vic b sung mt t l nh ( < 10 % ) Ge vo Si s lm cho c tnh ca cc dng c bn dn
thng thng c ci thin.
1.2 M HNH LIN KT NG HA TR
Trong cc cht, cc nguyn t c th lin kt vi nhau di 3 dng cu trc nh: V nh hnh
[amorphous]; a tinh th [polycrystalline] v n tinh th [single-crystal].
Cc vt liu v nh hnh c cu trc hon ton khng c trt t (hn n), ngc vi vt liu a
tinh th bao gm mt s lng ln cc tinh th khng hon chnh nh kt hp li.
CHNG 1: VT L BN DN
CU KIN IN T
CHNG 1: VT L BN DN
CU KIN IN T
Mt cc in t t do ny c gi l: mt cc ht ti in c bn ni [intrinsic carrier
density] ( cm 3 ) v c xc nh ty theo c tnh ca vt liu v nhit nh sau:
E
cm-6
(1.1)
ni2 = BT 3 exp G
kT
trong : EG l mc nng lng rng vng cm ca cht bn dn, n v o l eV; k l hng
s Boltzmann, 8,62x105 (eV/ K); T l nhit tuyt i (oK); B l thng s ty thuc vt liu,
CHNG 1: VT L BN DN
CU KIN IN T
1,12
= 4,52 x1019 / cm 6
ni2 = 1,08 x10 31 K 3 .cm 6 (300K )3 exp
5
8,62 x10 eV / K (300K )
hay
ni = 6,73x10 9 / cm 3
CHNG 1: VT L BN DN
CU KIN IN T
A/cm2
(1.6)
T phng trnh ny s xc nh dn in :
= q.(n n + p p )
(.cm)-1
A/cm2
(1.7)
(1.8)
CHNG 1: VT L BN DN
CU KIN IN T
= 3,38 105
(.cm)
(1.9)
Tra theo bng 1.1, ta thy rng bn dn Si sch c th c c tnh nh mt cht cch in, mc
d gn bng vi mc di ca khong in tr sut ca cht cch in.
1.4 BN DN TP CHT.
a) Cc tp cht trong cc cht bn dn.
Trong thc t, cc u im ca cc cht bn dn th hin r khi cc tp cht c b sung vo
vt liu bn dn nguyn cht, mc d vi mt t l rt thp tp cht nhng cht bn dn mi
c to thnh c ngha iu chnh c tnh dn in ca vt liu rt tt. Qu trnh nh vy
CHNG 1: VT L BN DN
CU KIN IN T
n 2 ( N D N A )n ni2 = 0
gii phng trnh trn ta c:
CHNG 1: VT L BN DN
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( N D N A ) ( N D N A ) 2 + 4ni2
n2
v
(1.11)
p= i
2
n
Trong thc t th ( N D N A ) >> 2ni , nn c th tnh gn ng: n ( N D N A ) . Cng thc
(1.11) c dng khi N D > N A .
* i vi vt liu bn dn tp dng-p. ( N A > N D )
i vi trng hp khi N A > N D , thay n vo (1.10) v gii phng trnh bc hai cho p ta c:
n=
n2
( N A N D ) ( N A N D ) + 4ni2
v
(1.12)
n= i
2
p
Tr li vi trng hp thng dng: ( N A N D ) >> 2ni nn: p ( N A N D ) . Biu thc
(1.12) s c s dng khi N A > N D .
Do nhng hn ch ca vic iu chnh qu trnh pha tp trong thc t, nn mt cc tp cht c
th a vo mng tinh th Silicon ch trong khong xp x t 1014 n 10 21 nguyn t /cm3. V
vy, N A v N D thng ln hn rt nhiu so vi nng cc ht ti in c bn trong bn dn
Silicon nhit phng.
T cc biu thc gn ng trn, ta thy rng mt cc ht ti in a s c quyt nh trc
tip bi nng tp cht thc t :
p ( N A N D ) i vi N A > N D hoc: n ( N D N A ) i vi: N D > N A .
Nh vy: c bn dn tp dng-n v bn dn tp dng-p, nng ht ti in a s c thit
lp bi nh ch to bng cc gi tr nng tp cht N A v N D v do khng ph thuc vo
p=
CHNG 1: VT L BN DN
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10
CHNG 1: VT L BN DN
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11
N D = 2 x1015 / cm 3 v ( N A = 0 ) .
BIN SON DQB, B/M TVT-HKT
CHNG 1: VT L BN DN
12
CU KIN IN T
= 1,6 x10 19 [(1260)(2 x1015 ) + (460 )(5x10 4 )] = 0,403(.cm ) 1 , suy ra: = 2,48.cm
So snh in tr sut kt qu trn vi in tr sut ca bn dn Si tinh khit, ta thy rng: vic
a mt phn rt nh tp cht vo mng tinh th Si s lm thay i in tr sut khong 105 ln,
tc l lm thay i vt liu t mt cht cch in thnh cht bn dn c gi tr in tr sut nm
khong gia di in tr sut ca cht bn dn.
S pha tp tp cht cng s quyt nh mt trong hai loi vt liu bn dn tp dng n hoc p v
cc biu thc n gin c th c dng tnh dn in ca nhiu loi vt liu bn dn tp.
Lu rng: n n >> p p trong biu thc tnh dn in v d 1.2 s ng cho vt liu
bn dn tp dng n cc mc pha tp thng gp, v i vi vt liu bn dn tp dng p
th: p p >> n n . V vy, nng cc ht ti in a s s iu chnh dn in ca vt liu:
q n n q n ( N D N A ) i vi vt liu ban dn - n
q p p q p ( N A N D ) i vi vt liu ban dn - p
(1.14)
= q n n = q n N D
n ND =
q
Ta bit rng n l mt hm s ca nng pha tp N D , m ch ph thuc di dng
th. Vic gii i hi s thm d sai s-th lp li bao gm c cc c lng v ton v
th. gii bi ton, ta cn phi thit lp mt tin trnh hp l cc bc m trong
s chn mt thng s cho php chng ta nh gi cc thng s khc t n li gii.
Phng php gii bi ton ny l:
1.
Chn mt gi tr ca N D .
2.
Tm n th ca linh ng
3.
Tnh n N D .
4.
Nu n N D khng chnh xc, th quay li bc 1.
D nhin, chng ta hy vng c th tin hnh chn t n kt qu sau mt vi php th.
i vi bi tp ny ta c:
q
S th t
php th
1
2
3
4
5
6
(cm2/ V.s)
1100
350
710
440
470
580
n ND
(V.s.cm)-1
1,1x1019
3,5x1020
7,1x1019
2,2x1020
1,9x1020
1,2x1020
CHNG 1: VT L BN DN
13
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Gradient trong hnh l dng theo chiu + x nhng s khuych tn cc ht ti in theo chiu x, t ni c nng cao sang ni c nng thp. V vy, mt dng khuych tn s t l vi
m gradient ht ti in:
p
p
j pdiff = (+ q ) Dp = qDp
x
x
A/cm2
(1.15)
n
n
diff
j n = ( q ) Dn = + qDn
x
x
Cc hng s t l Dp v Dn c gi l h s khuych tn ca in t v l trng, c n v l
(cm2/s). khuych tn v linh ng c quan h vi nhau bi h thc Einstein:
Dn kT Dp
=
=
n
q
p
(1.16)
p
T
j p = q p pE qDp
x
Thay h thc Einstein t (1.16) vo biu thc (1.17), ta c:
BIN SON DQB, B/M TVT-HKT
CHNG 1: VT L BN DN
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14
1 n
j nT = q n n E + VT
n x
(1.18)
1 p
T
j p = q p p E VT
p x
Cc biu thc trn l nhng cng c ton hnh thnh nn c s l thuyt cho vic phn tch
nguyn l hot ng ca cc cu kin bn dn.
CHNG 1: VT L BN DN
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CHNG 2:
15
Trc tin, ni dung ca chng 2 s gii thiu v tip gip pn. Tip gip pn l phn t chnh
ca cc cu kin bn dn v nu ch xt mt tip gip pn th c gi l diode tip gip, mt cu
kin rt quan trng trong in t. Tuy nhin, c l ng k hn, tip gip pn hin nay c th vn
l phn c bn ca hu ht cc dng c bn dn khc nhau v c cc mch vi in t, nn cn
phi hiu v tip gip pn trc khi kho st cc cu kin bn dn khc cc chng tip theo.
Cu kin in t n gin nht c gi l diode. Diode bn dn c kt hp bng hai vt liu
khc loi c gn kt vi nhau theo kiu sao cho in tch d dng chy theo mt chiu nhng
s b ngn cn theo chiu ngc li.
Diode c pht minh bi Henry Dunwoody vo nm 1906 khi ng t mt mu
carborundum vo gia hai vng kp bng ng vo l in. Sau mt vi nm, Greeleaf
Pickard pht minh b tch sng v tuyn tinh. Cc nghin cu khc nhau c din ra trong
khong thi gian t 1906 n 1940 cho thy rng silicon v germanium l nhng loi vt liu
rt tt dng ch to cc diode bn dn.
Nhiu vn kh khn c khc phc v cu trc v cng ngh ch to cc diode. Cho n
nhng nm gia thp nin 1950, cc nh ch to gii quyt c vn kh khn nht. Trong
thi k bng n v cng ngh nhng nm cui thp nin1950 v u thp nin 1960, cng ngh
bn dn t c thnh tu ln ng ch , do nhu cu phi c cc cu kin in t trng
lng nh, kch thc nh, v tiu th mc ngun thp dng cho vic pht trin tn la lin lc
a v cc tu v tr. Nhim v quan trng c t ra trong vic ch to cc cu kin bn
dn c th nhn c tin cy cao trong cc ng dng m trong khng th thc hin vic
bo dng. Kt qu l pht trin cu kin bn dn r hn v tin cy cao hn so vi cc n
chn khng.
Ni dung c bn ca chng s gii thiu nguyn l hot ng v cc ng dng ca diode bn
dn, loi cu kin hai in cc, kch thc nh, khng tuyn tnh (ngha l khi p t tng hai
mc in p s to ra mc dng in khng bng tng ca hai mc dng ring to thnh). Diode
hot ng ty thuc vo cc tnh ca in p t vo. c tuyn khng tuyn tnh ca diode l
l do diode c trong nhiu mch in t ng dng. Tip theo s phn tch v kho st mch
tng ng ca diode tip gip silicon, gii thch mt s ng dng quan trng ca diode.
Diode zener cng c gii thiu v kho st vic s dng diode zener iu ha in p,
cng nh cch thit k mch diode zener.
Gii thiu mt s loi diode chuyn dng khc nh diode Schottky, diode bin dung, diode pht
quang [light-emitting diode LED], v photodiode.
2.1 TIP GIP PN TRNG THI CN BNG.
CU KIN IN T
16
chng 1, c hai loi vt liu bn dn tp n v p c xem xt. Tip gip pn hay diode tip
gip c to thnh bng cch ghp ni n gin hai loi vt liu bn dn tp dng n v p vi
nhau (cu trc da trn cng mt loi bn dn Si hoc Ge), nh m t hnh 2.1a.
Trong thc t, diode c th c ch to bng cch: Trc tin, ngi ta ly mt mu bn dn
tp dng n c nng pha tp ND v tin hnh bin i chn lc mt phn mu n thnh vt liu
bn dn p nh b sung cc tp cht acceptor c nng NA > ND. Vng bn dn tp dng p c
gi l anode cn vng n c gi l cathode ca diode. K hiu mch ca diode nh hnh
2.1c. Tip gip pn l b phn c bn ca tt c cc cu kin bn dn v cc vi mch in t (IC).
n gin, vi gi thit khng c cc th hiu ngoi t vo mu tinh th, v mt ht ti
in ch ph thuc vo phng x, ta c th xt mt diode tip gip pn, tng t nh hnh 2.1,
vng vt liu bn dn tp dng - p c NA = 1017 (nguyn t /cm3) v ND = 1016 (nguyn t/cm3)
vng vt liu n. Nh vy, cc nng in t v l trng hai pha ca tip gip s l:
Vng bn dn tp p c pp = 1017 (l trng/cm3) v np 103 (in t/cm3)
Vng bn dn tp n c pn 104 (l trng/cm3) v nn = 1016 (in t/cm3)
Vi cc nng pha tp trn, ta c th v gin biu din nng theo thang loga nh hnh
2.2a, pha bn dn p ca tip gip c nng l trng rt ln, ngc li pha bn dn n c
nng l trng nh hn rt nhiu. Cng vy, nng in t rt ln pha bn dn n v nng
in t rt nh pha bn dn p. Do c s chnh lch v nng hai pha ca tip gip nn
s c s khuych tn xy ra qua tip gip pn. Cc l trng s khuych tn t vng c nng
cao pha bn dn p sang vng c nng thp pha bn dn n, cn cc in t s khuych
tn t pha bn dn n sang pha bn dn p nh hnh 2.2b, v c.
CU KIN IN T
17
E=
qN A
Q
dx =
(x + x p )
s
s
x p
x p < x < 0.
(2.3)
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18
x
E=
xn
qN D
qN D
dx =
(x x n )
s
s
(2.4)
N q
V = Edx = A
s
x p
x
N Dq n
q
2
2
( x + x p ) dx + s (x n x ) dx = 2s ( N A x p + N D x n )
0
x p
(2.8)
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19
VT
n po
dn0
=
n0
xn
Edx
(2.11)
x p
(2.13)
2 s B
x n0 =
2
N D
q N D + N
A
1/2
2 s B
x p0 =
2
NA
q N A + N
D
1/2
(2.14)
Tng rng vng in tch khng gian ca tip gip pn trng thi cn bng:
2 ( N + N D )
xd0 = x n0 + x p0 = s B A
qN A N D
1/2
(2.15)
2q B N A N D
E0 =
s ( N A + N D )
1/2
(2.16)
= 0,748 V .
=
(0,025
V)
ln
2
(10 20 /cm 3 )
ni
Thay gi tr ca th tip xc vo phng trnh (2.14),
B = VT ln
CU KIN IN T
20
1/2
2(1,04 10 12 )(0,748V)
xp =
= 0 ,0297 10 3 cm
19
16
15
(1,6
10
)(10
+
10
)
N
xn = xp A = 0,297 10 3 cm
ND
T phng trnh (2.14), c th c ba loi tip gip pn c ch to theo kiu pha tp khc nhau,
vi mt in tch biu din nh hnh 2.5:
1/2
1
ND
(2.17)
1/2
2q J N D
E0
(2.18)
ND
s
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21
Tng t i vi trng hp phn cc ngc hiu th tip xc s tng ln. Vy chnh lch th
hiu qua tip gip (cn gi l ro th [potential "barrier"]) s l:
- trng thi cn bng l: B
- trng thi phn cc thun: B VD < B
- trng thi phn cc ngc: B VD > B (v VD < 0)
Cc c trng tnh in ca vng ngho ca tip gip pn trng thi phn cc c th m t nh
hnh 2.9.
Khi phn cc thun: th tip xc gim, tc E gim nn s lm cho rng vng ngho xd hp
li. Khi phn cc ngc: th tip xc tng ln, tc E tng nn s lm cho rng vng ngho
xd tng ln.
BIN SON DQB, B/M TVT-HKT
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22
Hai vng in tch ca vng ngho b iu bin iu chnh th hiu t trn tip gip. V vy,
cc c trng tnh in ca vng ngho khi phn cc tng t nh cc c trng tnh in ca
vng ngho trng thi cn bng nu thay th B bng B VD .
Suy ra:
2 ( V ) N
x n (VD ) = s B D A
q( N A + N D) N D
1/2
2 ( V ) N
x p (VD ) = s B D D
q( N A + N D) N A
2 ( V )( N A + N D )
xd (VD ) = s B D
qN A N D
2q( B VD ) N A N D
E (VD ) =
s ( N A + N D)
1/2
(2.20)
1/2
(2.21)
1/2
(2.22)
V
x p (VD ) = x p0 1 D
B
V
xd (VD ) = xd0 1 D
B
(2.23)
(2.24)
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23
V
E (VD ) = E0 1 D
B
(2.25)
Dng khuych tn thc chy qua vng ngho lm cho cc ht ti in "thiu s" phng thch vo
hai vng trung ho, nn c s vt tri nng ht ti in thiu s hai vng trung ho. Vy
mt lng ln ht ti in a s khuych tn vo hai vng trung ho c th to ra dng in ln
chy qua tip gip.
Mt khc, khi phn cc ngc (VD < 0) , ro th tip gip s tng, ( B VD ) , nn s lm cho
in trng qua vng ngho tng, ESCR , v dng tri tng ln, J tri . S cn bng gia hai
thnh phn dng qua vng ngho b ph v, tc l: J tri > J kh.tan nh hnh 2.12.
Dng tri thc chy qua vng ngho lm cho cc ht ti in thiu s b rt ra khi hai vng
trung ho, nn c s st gim nng ht ti in thiu s trong hai vng trung ho. C rt t ht
ti in thiu s vo hai vng trung ho nn chi cho mt dng in nh.
Do , khi phn cc thun cho diode tip gip pn th cc ht ti in thiu s phng thch s
khuych tn qua vng trung ho, to ra s ti hp ti b mt bn dn. Khi phn cc ngc, cc
BIN SON DQB, B/M TVT-HKT
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v t s nng l trng ti hai bin vng ngho khi phn cc cho tip gip:
q[(x n ) - ( x p )]
p(x n )
q( B VD )
= exp
exp
p( x p )
kT
kT
Nhng nng in t v l trng ngay ti hai bin xp x bng nng pha tp, c gi l
xp x phng thch mc thp: n(x n ) N D v p(x p ) N A , nn ta c:
q(VD B )
kT
q(VD B )
p(x n ) N A exp
kT
n(x p ) N D exp
v:
(2.29)
(2.30)
Vi gi tr th tip xc l:
B =
kT N D N A
ln
q
n i2
thay vo phng trnh n(-x p ) v p(x n ) , s nhn c nng ht ti in thiu s ti hai bin
BIN SON DQB, B/M TVT-HKT
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ca vng ngho l:
n( x p )
n i2
qV
exp D
NA
kT
(2.31)
n i2
qV
(2.32)
exp D
kT
ND
Vy nng ht ti in thiu s khuych tn ngay ti hai bin ca vng ngho tu thuc vo
in p phn cc, tc l:
- trng thi cn bng (VD = 0) , ta c:
p(x n )
v:
n( x p ) =
n i2
n2
; p(x n ) = i
ND
NA
nh bit trn.
- trng thi phn cc thun (VD > 0) ; ngay ti gi tr rt nh (VD = 0,1V) , ti nhit phng:
n2
n2
n( x p ) >> i ; p(x n ) >> i
NA
ND
C mt s lng ln cc ht ti in c phng thch: Vy khi in p phn cc tng ln s
cho nng ht ti in phng thch ln, nn dng thun ln.
n i2
n2
; p(x n ) << i
NA
ND
C rt t ht ti in trch ra khi vng ngho, cho dng ngc nh. Do c s gii hn st
gim nng ht ti in thiu s thp, nn khi phn cc ngc, c dng ngc chy qua tip
gip rt b, gn bng 0, nn c s bo ho dng ngc.
Nh vy, c tnh chnh lu ca diode tip gip pn c xc nh t cc iu kin bin ca
ht ti in thiu s ti hai bin ca vng ngho.
Tip theo l cn phi xc nh dng khuych tn ca cc ht ti in trong hai vng trung ho.
Do s khuych tn ca cc in t trong vng trung ho pha bn dn - p, chuyn n v ti hp
vi tc khng i, mt dng in t J n khng i nn nng in t n(x) l tuyn tnh
nh c biu din hnh 2.14.
Mt dng in t:
BIN SON DQB, B/M TVT-HKT
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26
n i2
qV
n2
exp D i
np (x p ) np (Wp )
kT N A
N
dn
= qD n
= qD n A
J n = qD n
Wp x p
Wp x p
dx
Jn = q
n i2
Dn
qV
(exp D 1)
N A Wp x p
kT
(2.34)
Tng t, biu din dng l trng trong vng trung ho pha bn dn - n nh hnh 2.15:
Mt dng l trng:
Dp
n2
qV
Jp = q i
(exp D 1)
(2.35)
N D Wn x n
kT
Tng c hai thnh phn dng in t v l trng khuych tn trong vng trung ho s l,
1
Dp
Dn
1
(exp qVD 1)
J = J n + J p = qn i2
(2.36)
N A Wp x p N D Wn x n
kT
(2.37)
N A Wp x p N D Wn x n
kT
1
Dp
Dn
1
I S = qAni2
N
N
W
x
W
x
p
p
D
n
n
A
(2.39)
gi l dng bo ho ngc.
Vy khi tip gip pn c phn cc thun th mc chnh lch in th ngang qua vng ngho s
gim xung do in p phn cc VD, nn s to ra s phng thch ht ti in thiu s vo hai
vng trung ho. S khuych tn ht ti in thiu s vo su trong cc vng trung ho v ti hp
ti b mt ca vng trung ho. Do c cung cp s lng ht ti in ln cho s phng thch
nn s to ra dng in ln t l theo mc hm m in p t vo:
qV
I D exp D
kT
Khi tip gip pn c phn cc ngc th mc chnh lch in th ngang qua vng ngho s
tng ln do in p phn cc VD, nn s to ra s rt ta ht ti in thiu s khi hai vng trung
ho. S khuych tn ht ti in thiu s vo su trong cc vng trung ho v pht sinh ti b
mt ca vng trung ho. Do c cung cp s lng ht ti in rt t cho s rt ta nn s to ra
dng in c gi tr bo ho nh.
T phng trnh diode (2.37), ta nhn thy rng:
- Dng diode t l vi nng ht ti in thiu s vt tri ti hai bin ca vng in tch
n2
qV
n2
qV
khng gian: I D i (exp D 1) . ch phn cc thun: I D i exp D , nhiu hn
kT
N
N
kT
ht ti in c phng thch nn s cho dng in ln hn chy qua diode. ch phn cc
n2
ngc: I D i , nng ht ti in thiu s b suy gim n gi tr khng ng k v dng
N
in s bo ho.
- Dng diode cng t l vi khuych tn: I D D , nn vi s khuych tn nhanh hn s cho
dng in ln hn.
1
- Dng diode t l nghch vi rng vng trung ho I D
, vy ht ti in khuych
WQNR
CU KIN IN T
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- Dng diode cng t l vi tit din ca diode: I D A tc l diode c tit din ln hn s cho
dng chy qua diode ln hn.
Ch rng, ti x 0 , dng tip gip khng phi hon ton l dng khuych tn, nhng dng
tng phi vn khng i. Phng trnh diode thng c hiu chnh di dng:
V
I D = I S (exp D 1)
(2.40)
nVT
trong , n l h s thc nghim, n = 1 i vi khi ch c dng khuych tn. Nhng khi c s ti
hp rt ln trong vng ngho (nh trong silicon vi cc gi tr ca VD thp hn 0,5 V), th n c
th phi c tng ln 2. Thc t cng thy rng n = 2 i vi phng thch mc cao tc mt
dng cao. Ti cc mc dng diode va phi th
1 < n < 2 . i vi phn ln cc diode silicon, n
trong khong t 1,0 n 1,1.
Hnh 2.16, l c tuyn I - V, theo phng trnh
diode. Bi v VT 26mV nhit phng
(300oK), dng ID ph thuc gi tr VD dng trn
50mV theo dng hm m. Cng vy, i vi VD
m hn - 50mV, dng diode s c bo ho ti
gi tr IS. Thang o dng diode m c m
rng biu din gi tr rt nh ca IS. Theo c
tuyn I - V, cng cn phi lu rng, trong thc t
phng trnh diode s tr nn khng hp l ti gi
tr VD m ng k, khi dng diode s tng mnh
do nh thng in p.
2.4 CC C TNH CA DIODE BN DN.
a) in tr ng ca diode
Gia nng ht ti in v th hiu t vo c quan h theo hm m, nn c th vit biu thc
n theo s phn b nng v tnh ton cho c hai trng thi phn cc thun v ngc. Biu
thc s ng vi iu kin in p khng vt qu mc in p nh thng. Quan h trong
trng hp tng qut cn phi c th hin theo phng trnh (2.41).
qv
iD = I S exp D 1
(2.41)
nkT
trong , iD l dng in trong diode (ampere); vD l chnh lch in th ngang qua diode (volt);
vi: VT = kT/q, suy ra:
v
iD = I S exp D 1
(2.42)
nVT
Nu diode lm vic nhit phng (khong 25oC) v ch ch phn cc thun, th s hng
u trong ngoc s vt tri, nn dng tnh c gn ng l,
v
iD I Sexp D
(2.43)
nVT
Phng trnh c c tuyn theo hnh 2.17.
Nh xt trn, mc dng bo ha ngc IS ty thuc vo s pha tp, kch thc hnh hc ca
diode, v nhit . Hng s thc nghim n c th khc nhau ty theo cc mc dng v p v ph
thuc vo s khuych tn, tri ca in t, v s ti hp ca ht ti in trong vng ngho.
Hng s n s t bng 2 khi s lng ti hp in t - l trng trong vng ngho tng ln.
Nu n =1, gi tr nVT l vo khong 25mV ti 25oC. Khi n = 2, th nVT s l khong 50mV.
tnh mc dng v p ti im lm vic Q, cn c vo dc ca c tuyn hnh 2.17, thay
i theo bin thin ca dng tun theo quan h hm m.
C th vi phn biu thc ca phng trnh (2.42) tnh dc ti mc dng iD c nh bt k.
dc l dn in tng ng ca cu kin.
diD I S [exp(vD /nVT )]
=
(2.44)
dvD
nVT
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29
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30
Nhit cng lm tng mc dng bo ha ngc v dng bo ho ngc bin thin theo nng
cc ht ti in thiu s, tc l thay i theo ni2 , m ni2 l mt hm ca nhit .
i vi diode bng bn dn Gemanium, dng bo ha ngc IS (cn gi l dng r hay dng r)
tng ln gn gp i c mi khi nhit tng ln 100C, nhit 250C s c dng IS vo
khong 1A hay 2A v c dng r vo khong 100A = 0,1mA ti nhit lm vic 1000C.
Vi cc mc dng r IS nh vng ngc, nn c th xem diode nh mt chuyn mch trng
thi h mch vng phn cc ngc. Thc t thy rng, i vi bn dn Silicon, IS s tng gp
i trong khong tng nhit 5oC nhit t 25oC. Tuy nhin, gi tr in hnh ca IS
diode Silicon thp hn rt nhiu so vi IS ca diode bng bn dn Germanium c cng cp cng
sut v mc dng. Thm ch, ta cng c kt qu tng t khi diode lm vic nhit cao th
dng IS ca cc diode bng bn dn Si cng khng th t c cc mc dng r cao nh cc
diode Ge, y l l do rt quan trng khin cho cc diode bng bn dn Si c s dng nhiu
hn trong thit k ch to mch in t.
V c bn th s tng ng nh mt mch h vng phn cc ngc, khi lm vic ti nhit
bt k l l do tt nht c diode Si so vi diode Ge. Mc dng IS tng theo nhit , iu
ny gii thch cho vic cc mc in p ngng thp hn. vng phn cc ngc, in p nh
thng cng ty thuc vo nhit , nhng lu l dng bo ha ngc khng mong mun cng
tng ln. Dng bo ha ngc tng vo khong 7,2%/oC i vi c diode silicon v germanium.
Ni cch khc, IS gn gp i cho mi khong tng nhit l 10oC. Biu thc ca dng bo
ha ngc ph thuc vo nhit l,
I S (T2 ) = I S (T1 )exp[ki (T2 T1 )]
(2.49)
o
trong : ki = 0,07/ C v T1 v T2 l hai nhit khc nhau. Biu thc c th tnh gn ng bng
cch rt gn hm m,
I S (T2 ) = I 0 (T1 )2(T2 T1 )/10
(2.50)
bi v e0 ,7 2 .
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31
Khi mc in p phn cc thun trn diode khng i, th ID cng s tng gp i trong khong
tng nhit 10oC nhit t 25oC.
Khi nhit tng, in p chuyn sang dn V s gim. Ngc li, khi nhit gim s lm tng
v V, nh ch r hnh 2.19, trong V thay i tuyn tnh theo nhit tun theo phng
trnh sau: (gi s dng chy qua diode c gi khng i).
V (T1 ) V (T0 ) = kT (T1 T0 )
(2.51)
trong : T0 l nhit phng, khong 25oC; T1 l nhit lm vic ca diode (oC); V(T0) l st
p trn diode ti nhit phng (Volt). i vi diode Si: V(T0) = 0,7V, v diode Ge: V(T0) =
0,2V; V(T1) l st p trn diode nhit lm vic, (Volt); kT l h s nhit (V/oC). Gi tr
ca kT l khc nhau ty theo loi diode, i vi diode Ge c kT = - 2,5 mV/oC, diode Si c kT = 2,0 mV/oC.
e) M hnh mch tng ng ca diode
Mch hnh 2.20a, tng ng vi m hnh n gin ca diode silicon c trng thi lm vic
dc thun v ngc. c tuyn ca m hnh gn nh c tuyn hot ng ca diode hnh 2.18.
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khng phi ngt mch c kt qu ng so vi tnh ton l thuyt, khi cha c s r rng v
m hnh ng ca cc cu kin, tc l gi s cc m hnh phn trc khng m t c bn
cht vt l ca cc cu kin mt cch thch hp. Trong trng hp nh vy, s khng li gii
cho kt qu ng. Thc ra mc ch xuyn sut trong nghin cu l cho kh nng d on v
gii thch nguyn l hot ng thc t.
Nu khng mun mt nhiu thi gian, v tnh trng cha bit r rng ca gii php cng (mch
thc nghim), th c th da vo phn tch thun ty bng cch s dng cc phng trnh cho
tng phn t (chng hn nh nh lut Ohm v phng trnh diode). Hoc c th da vo cc
m hnh diode phn trn thay cho cc diode v sau thc hin vic phn tch mch thng
thng. Cc phn tch nh vy cn phi c cc gn ng v t cc m hnh l cc xp x. Ngoi
ra, cng c th khng a vo tnh ton nhiu iu kin vt l khc nh bin thin v nhit v
sai s ca cc cu kin.
Ngoi cc phng php phn tch mch trn, cc chng trnh m phng bng my tnh tr
nn ph bin trn cc PC. Kh nng v tc ca PC thng s dng m phng dng cho vic
phn tch mch ng hn l thit k mch, ngha l thng kim chng hiu sut ca mch m
trong c cc cu kin in t khc nhau c chn sn.
Cc chng trnh m phng cng c th dng thit k bng cch s dng k thut lp, chng
hn nh nu ta mun chn mt tr s in tr, ta c th phn tch mch theo cc tr s khc nhau
v chn mt tr s nhn c cc thng s thit k.
ng ti ca diode: Do diode l cu kin phi tuyn, cn phi thay i k thut phn tch mch
thng thng. Khng th vit cc phng trnh mt cch n gin v gii theo cc bin, v cc
phng trnh ch c th p dng trong phm vi vng lm vic c th.
Mt mch thng bao gm c hai in p ngun dc v ngun thay i theo thi gian. Nu ta
thit lp ngun bin thin theo thi gian bng 0, th nng lng ch c cung cp n mch t
ngun in p dc. Loi b ngun bin thin theo thi gian ra khi mch, s xc nh c in
p v dng ca diode c gi l im lm vic tnh (im - Q).
Hnh 2.21a, l mch gm mt diode, t, ngun cung cp v 2 in tr. Nu chn dng chy qua
diode v in p diode l i lng cn tm ca mch, th cn phi c hai phng trnh c lp
c cc i lng cn tnh c li gii duy nht cho im lm vic. Mt trong hai phng
trnh c suy ra t mch ni vi diode. Phng trnh th hai l quan h dng p thc t ca
diode. Hai phng trnh cn phi c gii ng thi, tc l c th thc hin bng th.
CU KIN IN T
33
(2.55)
Ta ang ch xt cc thnh phn bin thin theo thi gian ca cc tham s khc nhau (lu vic
s dng cc k t vit thng cho cc bin s). Vy cc gi tr ca tham s ton b s l:
vD = vd + VDQ
iD = id + I DQ
v phng trnh (1.37) s tr thnh:
vD VDQ = ( R1 RL )(iD I DQ ) + vs
Phng trnh cui cng c tn gi l ng ti ac hnh 2.21b. Do phng trnh lin qua ch
vi cc i lng bin thin theo thi gian nn khng bit im ct trc ta . Tuy nhin,
ng ti ac cn phi i qua im Q, v ti cc thi im khi phn tn hiu vo bin thin theo
thi gian i qua im 0, hai trng thi lm vic (dc v ac) cn phi ng nht. Vy ng ti ac
xc nh c l duy nht.
V d 2.2: Cho mch nh hnh 2.22, v in p
ngun l: vs = 1,1 + 0,1sin1000t (V)
Hy tnh mc dng chy qua diode iD. Bit rng, nVT
= 40mV; V = 0,7V.
Lp li php tnh bng cch s dng chng trnh m
phng trn my tnh.
Gii: p dng KVL c phng trnh dc, ta c:
V V
VS = V + I D RL , suy ra: I D = S
= 4mA
RL
Mc dng ny s thit lp im lm vic ca diode. Ta
cn phi xc nh in tr ng (s dng k hiu Rf thay cho rd do b qua in tr tip xc gia
bn dn v in cc kim loi), c th xc lp in tr ca tip gip c phn cc thun i
vi tn hiu ac, ta c:
nV
Rf = T = 10
ID
Lc ny ta c th thay th diode bng mt in tr 10 vi iu kin l diode s duy tr phn
cc thun trong chu k vo ca tn hiu ac. p dng tr li KVL, ta c:
vS
vs = Rf id + RLid ; id =
= 0,91sin 1000t mA
Rf + RL
Dng chy qua diode s l: iD = (4 + 0,91sin1000t ) mA .
V iD lun lun dng, diode s lun lun c phn cc thun.
Nu bin ca dng ac tr nn ln hn so vi gi tr dc ca dng iD, th iD s khng phi lun
lun dng, v gi thit l diode c phn cc thun l khng chnh xc. Do vy, li gii cn
phi c sa i, trong khi bin dng ac theo chiu m tr nn ln hn so vi gi tr dc,
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34
Vng ngho ng vai tr nh vng cch in, do diode phn cc ngc hot ng ging nh
mt t in c in dung thay i nghch o vi cn bc hai ca mc st p ngang vt liu bn
dn.
in dung tng ng ca cc diode tn s cao nh hn 5pF, v c th tr thnh in dung ln
khong 500pF cc diode dng ln (tn s thp). Cc thng s ca nh sn xut cn phi c
lu xc nh mc in dung cho trc theo iu kin lm vic cho.
2.5 MCH NGUN CHNH LU
ng dng c bn trc tin ca diode l chnh lu. Chnh lu (hay nn) l qu trnh chuyn tn
hiu xoay chiu (ac) thnh mt chiu (dc). Chnh lu c phn loi thnh chnh lu bn k
hoc chnh lu ton k.
a) Chnh lu bn k
Do mt diode l tng c th duy tr dng in chy ch theo mt chiu, nn diode c th dng
chuyn i tn hiu ac thnh tn hiu dc.
Hnh 2.24, l mch chnh lu bn k n gin. Khi in p vo dng, diode c phn cc
thun nn c th c thay bng mt ngn mch (gi s diode l l tng). Khi in p vo m,
diode c phn cc ngc nn c th thay bng mt mch h. Vy, khi diode c phn cc
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Mc in p trung bnh ca hm tun hon c tnh theo tch phn ca hm s trong mt chu
k ca hm tun hon, tc l bng s hng th nht trong khai trin chui Fourier ca hm s.
Lu rng, khi tn hiu vo sin c tr trung bnh bng 0, th dng sng ra c tr trung bnh l,
1 T/2
2 t
90
Voavg = 90sin
dt =
0
T
T
CU KIN IN T
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CU KIN IN T
37
Vic thit k mch lc bao gm chn tr s cho t C. Chng hn, cho tn hiu vo l sng sin c
bin 311V v mc in p ra thp nht c th nhn mch ng dng cho trc l 300V, suy
ra:
300 = 311e T ' /RLC
trong , T l khong thi gian x nh ch hnh 2.28. Ta c th tnh C theo T v RL nh
sau:
T'
T'
, v suy ra: C = 28,28
300 = 311e T ' /RLC hay: ln1,037 =
RLC
RL
Cng thc ny kh dng thit k mch lc, v T ph thuc vo hng s thi gian RLC, do
C cha bit. Ly gn ng khi l: T < T . i vi tn hiu vo c tn s 50Hz, th tn s c
bn ca tn hiu ra l 100Hz. Do vy,
1
1
= 10 ms
T= =
f 100
Ta c th tnh tr s ca t lc cn cho mt ti c th bng cch s dng ng thng gn ng
nh th hin hnh 2.29. Tnh C theo ng thng gn ng.
(2.58)
RLC
=
Vmax 2 f P Vmax f P 2Vmax
Trong phn ln cc thit k mch lc, u i hi gn cn phi nh hn nhiu so vi bin
dc, nn:
V
<< 1
2Vmax
V phng trnh (2.58) s tr thnh:
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38
Vmax
(2.59)
Vf P RL
Cng thc (2.59) l kt qu tnh ca bi ton thit k ch ng nu ng thng khng thp hn
Vmin, c tuyn theo hm m s vn gi trn gi tr Vmin.
S dng phng trnh (2.59) tnh t cho v d cho trn, vi gi thit tn hiu vo l sng
sin 50Hz, bin 311V v c in p ra c th nhn c thp nht l 300V, vy ta c Vmax =
311V, V = 11V, v tn s ca tn hiu ra mch nn ton k l fP = 100Hz, i vi mch nn
bn k fP = 50Hz,
Vy, t phng trnh (2.59),
Vmax
311V
0,283
(s 1 ).
C=
=
=
Vf P RL 11V 100Hz RL
RL
Mc gn sng khng tun theo dng tiu chun bt k no (v d nh dng sin hoc rng ca),
nn cn phi c mt s cch c trng ring v ln ca dng sng. in p gn Vr (rms) s
c tnh theo:
V Vmin
(2.60)
Vr (rms) = max
2 3
Lu rng, s dng 3 mu s ng hn so vi 2 v vi ch s 2 dng tnh tr s hiu
dng ca sng sin bng bin chia cho 2 . i vi sng tam gic, tr s hiu dng bng bin
chia cho 3 . Cc ch s s c kim chng bng cch ly cn bc hai ca tr s trung
bnh bnh phng ca dng sng trong mt chu k. Dng sng ca gn gn vi dng sng rng
ca hn so vi sng sin. Tr s trung bnh ca in p gn c cho l im gia ca dng sng
(xp x). H s gn s c nh ngha l:
V (rms)
He so gon = r
Vdc
d) Mch nhn i in p
Hnh 2.30, l mch to ra mc in p bng khong hai ln mc in p ra nh ln nht (khi
khng ti), gi l mch nhn i in p. Lu rng mch ging nh mch chnh lu cu ton
k hnh 2.26a, nu khng c hai diode c thay bng hai t. Khi in p vo c cc tnh
nh hnh v, s c hai thnh phn dng
chy qua diode D1. Mt dng thnh phn
chy qua C2 nn t s np ln mc Vmax.
Mt dng thnh phn khc thng qua in
tr ti v C1. Nu C1 c np ln mc
Vmax trong chu k trc, th t s c mc
ngun in p hiu dng khc Vmax mc
ni tip vi in p ra ca bin p, nn ti
s c mc in p l gp hai ln mc in
p ln nht. Cc t cng c vai tr lm
gim mc in p gn ti u ra.
2.6 DIODE N P (ZENER)
Diode zener l cu kin bn dn c thc hin pha tp to thnh c tuyn in p nh
thng hay in p thc l rt dc. Nu in p ngc vt qu in p nh thng, thng diode
khng b ph hy vi iu kin dng chy qua diode khng c vt qu gi tr ln nht
c quy nh trc v diode khng b qu nhit.
Khi ht ti in to ra do nhit (thnh phn dng ngc bo ha) lm gim c ro th tip
gip (xem mc 2.2) v nhn nng lng do in th ngoi t vo, ht ti in s va chm vi
cc ion trong mng tinh th v truyn mc nng lng ng k ph v mi lin kt ng ha
tr. Ngoi ht ti in ban u, cc cp ht ti in in t - l trng cng c to ra. Cp ht
ti mi c th nhn mc nng lng ln t in trng t vo va chm vi ion tinh th khc
v to ra ngay cp in t - l trng khc. Tc ng lin tc nh vy s b gy cc mi lin kt
ng ha tr, nn gi l qu trnh nh thng thc l.
C hai c ch ph v cc mi lin kt ng ha tr. S dng in trng mnh ti tip gip c
C=
CU KIN IN T
39
Thc hin phn tch mch hnh 2.36, xc nh ng tr s ca Ri. Phng trnh nt ca mch
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l:
40
Ri =
vS VZ vS VZ
=
iR
iZ + iL
(2.61)
vS VZ
iL
(2.62)
Ri
Cc i lng c th thay i trong phng trnh (2.62) l vS v iL. m bo diode vn
vng in p hng (vng nh thng), ta hy kho st hai m hnh ca trng thi vo/ra nh sau:
1. Mc dng chy qua diode, iZ l nh nht (IZmin) khi dng ti, iL l ln nht (ILmax) v mc
in p ngun, vS l nh nht (VSmin).
2. Mc dng chy qua diode, iZ l ln nht (IZmax) khi dng ti, iL l nh nht (ILmin) v mc
in p ngun, vS l ln nht (VSmax).
Khi cc c tnh ca hai m hnh c kt hp vo phng trnh (2.61), ta c:
Trng thi 1:
V VZ
Ri = Smin
(2.63)
I Lmax + I Zmin
Trng thi 2:
V
VZ
Ri = Smax
(2.64)
I Lmin + I Zmax
Do tr s ca Ri trong c hi phng trnh (2.63) v phng trnh (2.64) l mt, nn ta c th cn
bng hai biu thc c:
(2.65)
(VSmin VZ )( I Lmin + I Zmax ) = (VSmax VZ )( I Lmax + I Zmin )
Trong bi ton thc t, hp l nht l cho bit khong in p vo, khong dng ti, v mc in
p zener yu cu. Do vy phng trnh (2.65), s tng ng mt phng trnh theo hai n,
dng zener ln nht v nh nht. Xc nh phng trnh th hai bng cch xt c tuyn hnh
2.31. trnh phn c tuyn khng phi hng s, ta s dng quy tc kinh nghim l mc dng
zener nh nht s bng 0,1 ln mc dng zener ln nht, tc l:
I Zmin = 0,1I Zmax
Gii phng trnh (2.65) theo IZmax, trong s dng tiu chun thit k c gii thiu
trn,
I (V V ) + I Lmax (VSmax VZ )
I Zmax = Lmin Z Smin
(2.66)
VSmin - 0,9VZ - 0,1VSmax
C th tnh c mc dng zener ln nht, c tr s ca Ri t phng trnh (2.63) hoc (2.64).
V d 2.3: Thit k b n nh in p bng zener khong 10V (hnh 2.33) cho cc iu kin
nh sau: a) Khong dng ti t 100mA n 200mA v khong in p ngun t 14V n 20V.
b) Khong dng ti t 20mA n 200mA v khong in p ngun t 10,2V n 14V. S dng
diode zener 10V trong c hai trng hp.
iZ =
CU KIN IN T
41
VSmax VZ
20V 10V
=
= 15,8
I Lmin + I Zmax 533mA + 100mA
S khng y nu ch xc nh in tr Ri, nn cng cn phi chn cng sut nh mc thch
hp cho in tr. Mc cng sut ln nht cho bi tch ca in p v dng in, trong s
dng tr s ln nht cho mi i lng.
PR = ( I Zmax + I Lmin )(VSmax VZ ) = 6,3W
Cui cng, ta phi xc nh cng sut nh mc cho diode zener. Mc cng sut ln nht tiu
tn diode zener c tnh bng tch ca in p v dng in trn zener.
PR = VZ I Zmax = 0,53A 10V = 5,3W
b) Lp li cc bc tnh trn theo cc thng s ca phn b, ta c:
Ri =
I Zmax =
Tr s IZmax m cho bit bin gia VSmin v VZ l khng ln cho php thay i dng ti,
ngha l, trng thi xu nht ca in p vo l 10,2V v dng ti l 200mA, th zener khng
th cho kh nng duy tr 10V trn hai cc ca diode zener. Do , b n nh s khng hot
ng ng i vi tr s chn no ca in tr, nn ta c th tng in p ngun hoc gim
mc dng ra yu cu.
Mch n nh bng zener hnh 2.33, c th kt hp vi mch nn ton k hnh 2.25, to
thnh mch nn ton k c n nh in p bng zener nh hnh 2.34.
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43
i vi: vi < VB + V , ta c: vo = vi
Rf
R
+ (VB + V )
R + Rf
R + Rf
Ta c th thc hin ng thi c xn mc dng v xn mc m bng cc mch xn phn cc
song song, thit k bng hai diode v hai ngun in p mc theo hai chiu ngc nhau. Mch s
cho dng sng ra nh hnh 2.38, trong gi thit hai diode l l tng.
i vi: vi > VB + V , ta c: vo = vi
CU KIN IN T
44
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45
Dng sng vo hnh 2.41, b dch bi mt lng lm cho mc nh ca dng sng b dch mc
ti tr s l VB. Vy mc dch l mc chnh xc cn thay i mc ln nht ban u Vm n
mc ln nht mi VB. Dng sng l c ghim n gi tr VB. Nu ta bit tr s chnh xc
ca mc nh ban u Vm, th ta c th thc hin dch mc nh bng mt ngun dc c lp mc
ni tip vi ngun tn hiu. c trng ring ca mch ghim l mch c th iu chnh dng sng
m khng cn bit dng chnh xc ban u. Mc dch c xc nh bi dng sng thc t. Nu
dng sng vo thay i, th mc dch s thay i theo dng sng ra lun lun c ghim
mc VB. Do vy, mch ghim s cung cp thnh phn dc theo mc cn thit nhn c mc
ghim yu cu. i vi v d, t trong mch hnh 2.41, s np n gi tr bng vi mc chnh
lch gia mc nh ca dng sng ban u v VB. T ng vai tr nh ngun pin c bin in
p VB mc ni tip, do vy lm dch dng sng n gi tr th hin hnh 2.41c.
Mch ghim l mch c kt hp gia ngun pin (hay ngun dc), diode, t in v in tr.
in tr v t in phi c chn c hng s thi gian ln. t np n gi tr khng i
v duy tr ti gi tr sut trong chu k ca dng sng vo. Nu in p trn t khng duy tr
gn nh khng i, th s dn n mo dng sng nhiu hn so vi dch n. Nu m bo iu
kin hng s thi gian ln v in tr thun ca diode c gi thit l bng 0, th dng sng ra
l bn sao ca dng sng vo vi mc dch thch hp. Mi khi mc ra vt qu VB, diode s
c phn cc thun v sng ra s c gii hn mc VB. Trong sut khong thi gian , t
s c np n gi tr l:
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VC = Vm VB
Hnh 2.42, l mch ghim cho tn hiu ra s c ghim mc 0 (tc l khng c ngun pin nn
VB = 0). Bi v diode c mc ngc li so vi mch trc, nn mc thp nht ca tn hiu ra
s c ghim, tc l t in c th np ch theo chiu l s cng thm vi mc in p vo.
Mch th hin vi sng vung lm tn hiu vo. iu quan trng l mc in p ngang qua t s
duy tr gn nh khng i trong sut bn k ca dng sng vo. Theo kinh nghim thit k
mch, hng s thi gian RC thp nht bng 5 ln khong thi gian ca bn k (tc l 5 ln t1 t0
hoc t2 t1). Nu tun theo nguyn tc thit k, th mch RC phi c t nht l 20% ca hng s
thi gian np hoc x trong sut bn k, ngha l s thay cho tr s cui cng trong khong
18% ca gi tr ban u (tc l, exp(-0,2) = 0,82). Nu hng s thi gian qu nh, dng sng s
b mo dng nh ch hnh 2.42c. lm gim sai lch n mc thp nht so vi 18%, th c
th tng hng s thi gian (ngha l, tng ln gp 10 ln khong thi gian ca bn k).
2.8 B CHUYN I MC IN P DC - DC
Trong hu ht cc h thng in t, ngun cung cp cn phi c nhiu mc in p. Mt trong
nhng phng php to ra cc mc in p l s dng hng lot cc mch chnh lu bn k hoc
ton k. Tuy nhin, in p ra ca cc mch chnh lu c quyt nh bi in p ca bin p,
nn bin p cn phi c nhiu u ra. Ngoi ra, hu ht cc mch chnh lu thng hot ng
tn s thp 50Hz, hoc 60Hz nn cc bin p c kch thc v trng lng ln.
Mt phng php linh hot hn l s dng cc mch bin i dc sang dc hiu sut cao c th
hot ng ti cc tn s cao hn nhiu, bng cch nh vy s lm gim kch thc v trng
lng ca cc cun in cm trong mch. Mch bin i dc sang dc s dng in p vo dc v
s cung cp in p ra c iu khin bng in t vi di bin i lin tc. Mc ny s cp
hai kiu b bin i dc sang dc: b bin i tng s to ra in p u ra ln hn in p u
vo, v b bin i gim m in p ra s thp hn so vi in p vo.
a) B bin i kiu tng p
Mch ca b bin i tng [boost converter] c bn nh hnh 2.43a. Phn chnh ca b bin
i l cun cm L v chuyn mch S s c chuyn mch ng v m mt cch nh k, nh
ch r hnh 2.43b. Chuyn mch s kn mch trong khong thi gian Ton v h mch trong
khong thi gian Toff. Chuyn mch tun hon theo chu k T = Ton + Toff. Diode D cng s hot
ng nh mt chuyn mch nn diode s ngng khi S kn mch v ngc li. in p vo dc s
c cung cp bi ngun VS, cn R v C tng ng vi in tr ti v t lc.
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47
dng m hnh diode l tng. in p vo dc VS lc ny s xut hin trc tip trn cun cm, v
dng in trong cun cm ti thi im kt thc ca khong thi gian Ton l:
Ton V
V T
V
(2.69)
iL (Ton ) = iL (0+ ) + S dt = iL (0+ ) + S t 0on = iL (0+ ) + S Ton
0
L
L
L
Trong khong thi gian (0, Ton), dng chy qua cun in cm tng dn theo tc hng nh th
hin hnh 2.45. V dng trong cun in cm khng th thay i tc thi, iL(0+) s bng vi
mc dng ngay trc khi chuyn mch thay i trng thi.
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48
=
Cun in cm
Ir
Ir T Ir f
V T T V T
C = O on = O
T lc
Vr R T RC
b) B bin i gim p
Mch bin i gim p [buck converter] nh hnh 2.46, c thit k to ra in p u ra
l thp hn so vi in p u vo. Nguyn l hot ng ca b bin i gim p hnh 2.46,
tng t hot ng ca b bin i tng p, v chuyn mch S s hot ng mt cch tun hon
vi cng kiu nh thi nh hnh 2.43a.
Chuyn mch S kn mch
Trong khong thi gian Ton, chuyn mch S kn mch, nn diode D s c phn cc ngc theo
in p vo dng dn n mch tng ng hnh 2.46b. Gi s in p gn ti u ra kh
nh in p u ra c th xem gn ng mc in p hng vO VO, suy ra mc in p trn
cun in cm s bng VS VO, v mc dng in cm ti thi im kt thc ca khong thi
gian Ton s l:
Ton V V
V VO
S
O
(2.78)
iL (Ton ) = iL (0+ ) +
dt = iL (0+ ) + S
Ton
0
L
L
V dng chy trong cun in cm khng thay i tc thi, nn iL(0+) s bng vi mc dng
ngay trc khi chuyn mch thay i trng thi.
Chuyn mch S h mch
Khi chuyn mch S chuyn sang h mch, diode s chuyn sang dn, to ng dn lin tc cho
dng in cm t im t qua diode n in tr ti R v t lc C nh m t hnh 3.72c. in
p trn in cm lc ny bng vi VO. Dng in cm ti thi im kt thc ca Toff l:
BIN SON DQB, B/M TVT-HKT
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49
V V
V
VO
dt = iL (0 + ) + S O Ton O Toff
(2.79)
Ton
L
L
L
Tuy nhin, mch hot ng tun hon vi chu k T. Do , dng in cm ti cc thi im t =
0+ v t = T cn phi ng nht, nn ta c:
V
V VS
iL (T ) = iL (0+ ) v: O
(2.80)
Ton = O Toff
L
L
Rt gn phng trnh s c quan h c bn gia in p u ra v in p u vo ca b bin
i gim p:
T
(2.81)
VO = VS on = VS
T
iL (T ) = iL (Ton ) +
Ton +Toff
Dng sng dng in cm ca mch bin i gim p l rt ging vi dng sng dng in
mch bin i tng p nh hnh 3.73. Bin dng gn Ir c tnh bi:
V V
V
I r = S O Ton = O Toff
(2.82)
L
L
T phng trnh (3.93) suy ra biu thc cho gi tr ca cun in cm:
V
V T T V T T V
L = O Toff = O off = O 1 on = O (1 )
(2.83)
Ir
Ir T
Ir
T Ir f
Trong mch bin i gim p, dng dc IL bng vi dng ti IO. Dng cn phi c cung cp t
ngun VS s c tnh theo:
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50
VO
T
= I O on = I O
(2.84)
VS
T
T phng trnh (2.84), ta thy rng dng vo dc n b bin i l thp hn mc dng ti.
in p gn v in dung ca t lc
mch bin i gim p, ch dng gn cn phi c hp th bi t lc C. in p thay i
theo chiu dng trn t cn phi cn bng vi in p thay i theo chiu m, bng vi in p
gn Vr:
1 I T +T I T
1 Ton +(Toff )/2
Q
trong : Q = r = on off = r
(2.85)
Vr =
ir dt =
T
/
2
C on
C
2 2
2
8
T lc
hoc:
IS = I O
C=
I rT VO T 2
(1 )
=
8Vr Vr 8L
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52
hai bn cc dn in, cn vng ngho c chc nng nh mt lp in mi. Hnh 2.49b, cho thy
khi in p phn cc ngc tng ln, th vng ngho s rng ra. T vn c in dung nhng v
hai vng dn cch xa hn nn in dung b gim xung.
Mch hnh 2.51, l mch iu chnh chn tn s ca tn hiu t antenna s dng diode bin
dung. Khi cng hng, mch iu hng song song c tr khng cao. Tn hiu t antenna ti tn
s cng hng ca mch iu hng s to ra mt st p trn tr khng cao ca mch iu
hng nn tn hiu s c khuych i. Cc tn s tn hiu ti cc tn s khc s xem mch
iu hng nh mch c tr khng thp so vi t nn s khng c a n mch khuych
i. Gi tr in dung tng ng ca mch cng hng bng 500pF mc song song vi nhnh
2 t c in dung 0,1F v in dung ca diode bin dung. V d 2.5, l mch iu hng s
dng diode bin dung MVAM108 iu chnh tn s cng hng.
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53
V d 2.5: Hy tnh tn s cng hng ca mch iu hng [tuner] hnh 2.51, theo hai mc
in p t vo l (a) 1V v (b) 7V.
- T c tuyn in dung theo in p ngc hnh 2.50, ta xc nh c tr s in dung ca
diode bin dung ti in p phn cc ngc 1V v 7V: (a) 500pF @ 1V; (b) 55pF @ 7V.
- Tnh in dung tng ng ca mch iu hng. V in dung tng ng ca diode bin
dung l nh hn nhiu so vi 0,1F, nn in dung ca mch ni tip s bng tr s in dung
ca varactor. Tng in dung tng ng ca mch cng hng bng gi tr in dung ca
varactor song song vi 500 pF.
(a) Ceq @ 1V = 500pF + 500pF = 1000pF
(b) Ceq @ 7V = 55pF + 500pF = 555pF
1
- Tnh tn s cng hng ti c hai mc in p t vo diode bin dung: FR =
2 LC
1
1
(a) FR =
= 504kHz (b)
FR =
= 676kHz
2 100H 1000pF
2 100H 555pF
b) Cc diode chuyn mch tn s cao.
Gii thiu.
Diode bin dung l mt v d ng dng gi tr in dung c trong diode tip gip pn khi c
phn cc ngc. Tt c cc diode tip gip pn u c mt gi tr in dung no ; in dung
ca tip gip pn khng ng k khi s dng diode tip gip mch tn s thp, nhng mch lm
vic di tn s cao, th dung khng (XC) ca tip gip pn c th lm gim n mc khng cn
dng ngc.
Thi gian hi phc ngc (trr) l thi gian cn thit diode ngng dn khi diode c phn
cc ngc. Thng s thi gian hi phc ngc tr thnh yu t quan trng ti tc chuyn
mch cao. Cc diode chnh lu tn s thp c thng s thi gian hi phc ngc nh mc vo
khong vi microsecond, ngc li cc diode chuyn mch tc cao c thi gian hi phc
ngc vo khong vi nanosecond. Cc nh sn xut ch to cc diode chuyn mch tn s
cao c th lm vic ti cc tn s trn 3000MHz.
Diode hi phc bc thang.
Diode hi phc bc l diode tip gip pn. Vt liu p v n gn tip gip c pha tp long. S
pha tp vt liu bn dn s c tng dn theo khong cch tng ln t tip gip. Diode hi
phc bc s lm gim in dung tip gip nn cho php diode hi phc bc lm vic tn s
cao. K hiu mch ca diode hi phc bc nh vi diode thng thng.
Diode PIN.
Hnh 2.52, l cu to ca diode PIN, vi vng vt liu bn dn P v N c pha tp m c
cch ly bng mt vng khng pha tp hay vt liu bn dn thun. Tn gi diode PIN bt ngun
t loi vt liu bn dn c s dng trong cu trc ca diode. Vt liu thun ng vai tr nh
cht in mi phn cch hai vng dn. S ngn cch hai vng dn s lm gim in dung tip
gip ca diode nn diode PIN c th c s dng tn s cao. K hiu mch ca diode PIN
nh k hiu ca diode thng thng.
Diode Schottky.
Diode Schottky cn c gi l diode ht ti nng [hot - carrier diode] khng c tip gip pn,
m tip gip ca diode Shottky c to thnh bng mt tm chn kim loi (vng, platinum,
bc) v vt liu bn dn - n (hnh 2.53). Diode Schottky c c tuyn dng p tng t nh
diode tip gip pn, ngoi tr in p m thun V trong khong t 0,3V n 0,6V. in dung
BIN SON DQB, B/M TVT-HKT
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lin quan vi diode Schottky l cc nh. Khi diode Schottky lm vic ch phn cc thun,
dng in c to ra bi s di chuyn ca cc in t t silicon dng n thng qua ro chn v
lp kim loi. Do cc in t ti hp tng i nhanh khi qua lp kim loi, thi gian ti hp ngn
vo khong 10ps, nhanh hn nhiu so vi diode tip gip pn thng thng, nn diode Schottky
c ngha ln trong cc ng dng chuyn mch tc cao.
Diode Schottky c s dng nhiu trong cng ngh mch tch hp do d ch to v c th sn
xut ng thi cc cu kin khc trn mt chip. Vic ch to mt diode tip gip pn i hi
khuych tn bn dn dng p nhiu hn so vi diode Schottky, nhng vic ch to diode Schottky
c th yu cu b sung bc ph kim loi. Cc c tnh tp m thp ca diode Schottky to cho
diode l tng i vi ng dng trong vic gim st cng sut ca di tn radio mc thp, cc
mch tch sng tn s cao, v cc b trn trong radar Doppler.
Li th ca diode Schottky l mc st p thun ca n thp v tc chuyn mch ca diode.
Cc diode Schottky c th c ch to c thi gian ng m vo khong 10nS. Do tc
chuyn mch cao v st p thun thp, cc diode Schottky thng c s dng trong cc b
ngun cung cp kiu chuyn mch. K hiu mch ca diode Schottky nh hnh 2.53.
c) Diode pht quang - LED [light - emitting diode]
Mt s loi diode khc c kh nng bin i nng lng in thnh nng lng sng. Diode
pht quang s chuyn i dng in thnh nh sng rt hiu qu trong cc loi hin th khc
nhau v i khi c th s dng lm ngun pht sng cho cc ng dng thng tin bng cp si
quang.
Mt in t c th ri t di dn vo mt l trng v pht ra nng lng di dng mt photon
ca nh sng. Cc lin quan ca xung lng v nng lng trong silicon v germanium nh vy
lm cho in t pht ra nng lng di dng nhit nng khi in t tr li t di dn xung di
ha tr. Tuy nhin, in t trong tinh th gallium arsenide s to ra photon khi in t ri tr li
t di dn xung di ha tr. Mc d khng c in t trong tinh th to ra nh sng c th
nhn thy khi p t phn cc thun, mt s lng ln in t s c phng thch t vt liu n
vo vng vt liu p. Cc in t s kt hp vi cc l trng trong vng vt liu p ti mc
nng lng ca di ha tr, nn cc photon s c bc x. Cng sng t l vi tc ti
hp ca cc in t v do t l vi dng in ca diode. Diode bng gallium arsenide s pht
ra sng nh sng ti bc sng gn di hng ngoi. to ra nh sng di c th nhn thy cn
phi trn gallium phosphide vi gallium arsenide.
Khi LED ang dn, mc st p thun vo khong 1,7V. Lng nh sng pht ra bi LED ty
thuc vo mc dng chy qua diode; mc dng ln hn s pht ra nh sng r rt hn. Cn phi
lp ni tip vi LED mt in tr hn dng trnh lm hng diode. Tr s ca in tr hn
dng d dng tnh bng mc dng dn gii hn ca LED vo khong 10mA, vi in p dn ca
diode vo khong 1,7V. V d cn phi chn in tr hn dng LED pht ra nh sng thch
hp khi t mc ngun 5Vdc n LED nh mch hnh 2.54a. Vi mc dng gii hn chy qua
LED vo khong 10mA khi LED dn v mc in p dn l 1,7V, st p trn RCL l: 5V 1,7V
= 3,3V. Vi mc dng ln nht khong 10mA, th tr s in tr ca RCL = 330. Chnh l tr s
in tr thng dng cho vic s dng ngun 5V c LED hin th.
d) Photodiode
Photodiode hay Quang diode c chc nng ngc li so vi LED, tc l photodiode s bin i
nng lng sng thnh dng in. p dng phn cc ngc cho photodiode nn dng bo ha
ngc s c iu chnh bng cng nh sng chiu vo diode. nh sng s to ra cc cp
in t - l trng, tc l gy ra dng in. Kt qu l mc dng quang mch ngoi s t l theo
cng nh sng chiu vo cu kin. Diode hot ng nh b to dng hng vi iu kin
in p khng vt qu in p nh thng thc l. Thi gian p ng nh hn 1s. nhy
ca diode c th tng ln nu vng tip gip c ch to ln hn khi thu nhn nhiu photon
hn, nhng iu ny cng s lm tng thi gian p ng do in dung tip gip (v do hng s
thi gian RC) tng.
Cu to ca photodiode gm mt mu vt liu bn dn tp - p c khuych tn vo bng vt
liu bn dn tp - n hnh thnh tip gip pn. Vt liu tp - n c l sng thng qua mt
ca s. Photodiode c ch to lm vic ch phn cc ngc nh hnh 2.54b, ch
phn cc ngc dng chy qua diode ph thuc vo dng cc ht ti thiu s. Trong photodiode,
lng cc ht ti thiu s t l thun vi lng nh sng chiu vo qua ca s. V c bn mt
BIN SON DQB, B/M TVT-HKT
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e) B bo v qu in p.
Hnh 2.55, l mch hai diode zener mc i u nhau ni ngang qua ng dy ngun cung cp
ac bo v thit b in t khng b qu in p ngun cung cp ac. in p nh ca ng
dy 220Vac l khong 310VP . Thit b in t c mch ngun cung cp c thit k vi in
p ng dy ac u vo v bin i in p ac thnh cc mc in p dc cn thit. i khi c
cc thng ging in p ngun cung cp xut hin trn ng dy in ac lm cho in p nh
ln n hng ngn volt do sm st chng hn, hoc do cc vic ng ct cc ti in cm cng c
th gy qu p trn ng dy.
Nu hai diode zener hnh 2.55, c thng s in p nh thng l 320V, th trng thi bnh
thng, diode zener s khng dn in, v thit b in t s nhn mc in p ng dy cn
thit. Nu qu in p ngun cung cp xut hin trn ng dy in vt qu 320,7V nh, th
hai diode zener s dn in ghim mc in p vo mc 320,7V.
CU KIN IN T
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CHNG 3.
56
Transistor hiu ng trng gi tt l FETs [Fiel-Effect Transistors] bao gm hai loi chnh
l: Transistor hiu ng trng c cu trc cng bng bn dn-oxide-kim loai, gi tt l MOSFET
[Metal-Oxide-Semiconductor FET], v transistor hiu ng trng c cu trc cng bng tip
gip pn, thng gi l JFET [Junction FET]. Transistor MOSFET tr thnh mt trong nhng
dng c bn dn quan trng nht trong vic thit k ch to cc mch tch hp (ICs) do tnh n
nh nhit v nhiu c tnh thng dng tuyt vi khc ca n. C MOSFET v JFET u dn
in theo cc knh dn, nn mi loi u c dng knh dn bng bn dn n hoc p, gi l
MOSFET knh n (gi tt l NMOS), MOSFET knh p (gi tt l PMOS) v JFET knh n v
JFET knh p tng ng. Ngoi ra, i vi MOSFET da theo nguyn tc hnh thnh knh dn
m c MOSFET cm ng knh hay tng cng knh; giu knh (knh khng c sn) v
MOSFET ngho knh (knh c sn).
3.1 CU TRC C BN CA MOSFET .
Cu to c bn v k hiu mch ca MOSFET knh n c cho hnh 3.1.
Phn chnh ca mt MOSFET c cu trc nh hai bn cc ca mt t in: mt bn kim loi
pha trn c ni vi chn ra gi l chn Cng [Gate] G, bn cc pha di l phin lm
bng vt liu bn dn Si tp dng p, i khi
c ni vi cc ngun bn trong MOS
(MOS ba chn), nhng phn ln, cc
c ly ra bng mt chn th t c tn l
chn [Bode] B, (c khi cn gi l cc SS
[Substrate]) c th cho php iu khin
bi mc in th ca n t bn ngoi.
Lp in mi ca t chnh l lp cch in
rt mng di xit Silicon (SiO2), do cu trc
nh vy nn Cng - c gi l cu trc
ca t MOS [Metal-Oxide-Semiconductor].
Cc chn Ngun [Source] S v Mng [Drain] D, l cc chn c ni vi cc vng bn dn tp
dng n+ t bn trong phin , gi l vng Ngun v vng Mng tng ng. i vi mt dng
c bn dn knh n, th dng in c hnh thnh bng cc in t v vng Ngun v Mng
c cu to bi cc vng pha tp m n+
(vo khong 1020 cm-3) c th tip xc tt
vi knh dn. Ngi ta dng phng php
cy ion to ra vng Ngun v Mng sau
khi cu trc Cng c xc lp sao cho
hai vng ny thng hng vi vng Cng, v
s hnh thnh knh dn c lin tc cn
phi c s chng ln gia vng Cng vi
vng Ngun v Cng vi Mng hai u
knh dn. Do cu to ca dng c c tnh i
xng nn Ngun v Mng c th thay th ln
nhau. Vng bn dn gia hai vng Ngun v
Mng ngay pha di Cng c gi l vng
knh. Khong cch gia hai tip gip pn
(vng Ngun- v vng Mng-) l chiu
di hiu dng ca knh L. v W l chiu rng
ca knh. Vng l mt bn dn tp kiu
ngc li vi hai vng Ngun v Mng
(thng mc pha tp long hn) m
bo cch ly gia hai vng. Lp xit (SiO2)
c to ra bng cch gia nhit nhit
cao c cc c tnh b mt chung tt nht.
Vt liu lm Cng thng dng nht l kim
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loi hoc polysilicon. Khi chiu di knh dn bng 0,3m, th cc thng s in hnh l: chiu
dy ca lp xit 10m, mc pha tp ca vng l 3x1017cm-3, dy tip gip pn gia
Mng- v Ngun- l 0,2m. i vi mi loi knh dn, th mc ngng ca in p
cng phi thch hp c th lm bin i knh dn. Nu knh dn bin mt ti in p cng
bng 0 (tc l knh dn thng h - normally OFF) th MOSFET c gi l dng c tng
cng knh do in p cng cn phi c cho s tng cng [enhance] hay lm giu knh dn,
(hnh 3.1a, b, c). Nu knh l c sn ti in p cng bng 0 (tc thng kn - ON), th
MOSFET c gi l dng c ngho knh v in p cng cn cho vic lm suy kit [deplete]
hay lm ngho knh dn, (hnh 3.1d).
Cc in p v dng in ca MOSFET knh n cng c xc nh r trn hnh 3.1b. Dng
Mng iD, dng Ngun iS, dng Cng iG, v dng iB c xc nh vi chiu dng ca dng
c ch r cho mt transistor MOSFET knh n. Cc in p gia cc cc quan trng l in p
Cng-Ngun: vGS = vG - vS , in p Mng-Ngun: vDS = vD - vS , v in p Ngun-: vSB =
vS - vB . Tt c cc in p ny u c gi tr 0 trong ch hot ng thng thng ca N
MOSFET.
Ch rng: cc vng Ngun v Mng to thnh tip
gip pn vi vng . Hai tip gip ny lun lun
c gi iu kin phn cc ngc c s cch ly
gia cc tip gip ca transistor MOS. V vy, in p
phi nh hn hoc bng vi in p cc cc
Ngun v Mng m bo cho cc tip gip pn
c phn cc ngc mt cch thch hp, tc: iB 0.
Ngoi ra, Cng phi l mt bn cc kim loi c
tip xc mt nhng vn c cch in vi vng
knh qua lp SiO2, hay ni cch khc l khng c kt
ni in trc tip gia cc Cng v knh dn
MOSFET, nn MOSFET l mt dng c c tr khng
vo rt cao, bi v dng Cng rt nh, iG 0 cu
hnh phn cc dc. V l do ny m i khi MOSFET
cn c tn gi l FET c cng cch ly hay IGFET
[Insulated-Gate FET].
3.2 NGUYN L LM VIC V C TUYN
CA NMOS KIU TNG CNG.
a) Cc c tnh ca t MOS.
Nh ni cu to, trung tm ca MOSFET thc
cht l c cu trc ca t MOS, c v hnh 3.2a,
trong in cc pha trn ca t c hnh thnh
bi mt bn kim loi, chng hn nh nhm hoc mt
cht c cu trc a tinh th c pha tp m c (a
tinh th Si), in cc ny xem nh cc Cng (G). Mt
lp cch in mng thng bng di-xit Si s cch ly
cng bng kim loi vi l mt vng bn dn m
tnh nng ca n nh mt in cc th hai ca t
MOS. Dixit Si l mt cht cch in cht lng cao,
rt n nh v d dng c to thnh bi s -xy ha
bng nhit thanh Silicon. Kh nng to thnh
mt cht cch in cht lng cao l mt trong nhng
l do c bn m Silicon tr thnh vt liu bn dn ch
yu trong cng ngh ch to dng c bn dn hin
nay. Vng bn dn lm c th l n hay p nh
hnh 3.2a.
Nguyn l lm vic ca t MOS l bn cht nguyn
tc hot ng ca MOSFET. Lp bn dn to thnh
in cc pha di ca t c in tr sut ln do s
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hoc
i ( x )dx = nC"oxW (vGS v ( x ) VTN )dv ( x )
(3.7)
in p t trn cc cc ca NMOS l v(0) = 0 v v(L) = vDS , nn ta c th tnh tch phn (3.7)
theo chiu di ca knh t 0 n L:
L
v DS
0 i( x )dx = 0
(3.8)
Bi v khng c s suy hao v dng in khi chy qua knh dn, nn dng in trong knh dn
phi bng cng mt gi tr iDS ti mi im x trong knh, ngha l i(x) = - iDS, v (3.8) s c
suy ra nh sau:
v
(3.9)
i DS L = nC"oxW vGS VTN DS v DS
2
v
W
(3.10)
vGS VTN DS v DS
L
2
Gi tr nC"ox c gi c nh do nh sn xut quyt nh. tin cho cc mc ch thit k v
phn tch mch, biu thc (3.10) thng c vit dng nh sau:
W
v
'
i DS = K 'n vGS VTN DS v DS vi: K 'n = nC ox
L
2
hoc:
i DS = nC"ox
W
v
i DS = K n vGS VTN DS v DS
trong : K n = K 'n
(3.11)
L
2
hoc
'
vi iu kin: vGS - VTN vDS 0 v K 'n = nCox
R rng hn l ta c th nhn c biu thc bng cch nhm cc s hng (3.10):
(3.14)
v v
(3.15)
Khi in p Mng-Ngun c gi tr nh, th s
hng th nht s biu din i lng in tch
trung bnh trn mt n v di trong knh
dn, bi v in p knh dn trung bnh v(x) =
vDS/ 2. S hng th hai s tng trng cho vn
tc tri trong knh dn, m khi in trng
trung bnh s bng vi in p vDS t ngang
qua knh dn chia cho di knh L
c tuyn i-v vng tuyn tnh c to ra t
biu thc (3.14) cho hnh 3.5 i vi trng
hp VTN = 1V v Kn = 250 A/V2.
Cc c tuyn hnh 3.5 l mt phn c
tuyn ra ca transistor NMOS. c tuyn ra
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RON
=
(3.17)
W
v DS 0 tai im Q
K 'n (VGS VTN )
L
rng RON cng bng vi t s vDS/ iDS biu thc (3.16).
Ti nhng im gn st vi gc ta , cc c tuyn i-v ca MOSFET thc cht l cc ng
thng, tc l c tuyn phi c xt vi iu kin vDS vGS - VTN, tuy nhin theo hnh 3.5 th
hnh nh tuyn tnh bt u b vi phm i vi c tuyn thp nht, khi VGS- VTN = 2-1 =
1V (gn bng vi cc gi tr ca VDS), nn lc ny ta phi hiu rng vng tuyn tnh ch ng vi
cc gi tr ca vDS thp hn 0,1 n 0,2V. i vi nhng c tuyn ng vi VGS ln, th c
tuyn V-A th hin tuyn tnh rt cao trong sut cc gi tr ca VDS hnh 3.5, chng hn,
i
= DS
v DS
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2
L
Vng knh b bin i (o) c in p vGS - VTN t ngang qua n, nh hnh 3.7. V vy, s
hng th nht ca (3.21) tng ng vi gi tr in tch trung bnh trong lp o, v s hng th
hai l gi tr vn tc ca cc in t tri trong in trng bng (vGS - VTN)/ L.
Hnh 3.8a, l ton b h c tuyn ra ca mt transistor NMOS c VTN = 1V v Kn = 25 A/V2,
m trong v tr cc im tht knh c xc nh bi vDS = VDSAT. Pha bn tri ca cc v tr
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im tht knh l trng thi ca transistor lm vic vng tuyn tnh, v pha phi ca cc im
tht l vng bo ha. Khi vGS VTN = 1V, transistor s ngng dn v dng mng bng 0. Khi
tng in p Cng vng bo ha, th khong cch gia cc c tuyn dng mng s gin ra do
bn cht lut bnh phng ca biu thc (3.19).
Hnh 3.8b, l mt c tuyn ra c th i vi in p Cng-Ngun, VGS = 3V, c tuyn ny biu
din cc biu thc quan h dng-p ca NMOS vng tuyn tnh v vng bo ha. Biu thc
vng tuyn tnh (3.14) c miu t bi ng parabola hnh 3.8b, v khi iu kin: VDS > VGS
- VTN = 2V, th c tuyn l ng thng nm
ngang, tc NMOS bt u chuyn vo vng c
dng iDS bo ha theo phng trnh (3.19). im
tht knh l im giao nhau gia hai ng biu
din ca hai phng trnh (3.14) v (3.19).
e) Tng hp nguyn l lm vic v cc phng
trnh c bn ca NMOS kiu tng cng.
Nh xt trn, do khng tn ti knh dn gia
hai vng mng v ngun khi t nht in p VGS =
0V, nn vi mt in p VDS dng no v
cc B c ni trc tip vi cc ngun, th
thc t l s c hai tip gip pn phn cc ngc
gia hai vng pha tp n v s khng c dng
chy gia hai vng mng v ngun.
Khi c hai in p VDS v VGS c thit lp ti in p dng no (ln hn 0V), tc l thit
lp in p dng ti mng v cng so vi ngun. in p dng ti cng s y cc l trng
(do cc in tch cng du y nhau) vo su trong p sut theo din tch ph ca lp SiO2, to
ra mt vng ngho khng c cc l trng gn lp cch ly bng SiO2. Tuy nhin, cc in t
trong p (cc ht ti in thiu s ca vt liu bn dn tp p) s c thu ht n bn cc cng
dng v tch ly li thnh vng gn st vi b mt ca lp xt. Lp SiO2 vi phm cht cch
in rt tt ca n s ngn cn cc ht ti mang in tch m hp th cc cng. Nn khi tng
VGS th s tch ly cc in t gn st b mt ca lp SiO2 s tng ln, to ra mt vng knh n
c th truyn dn mt dng in ng k gia Mng v Ngun.
ng vi tr s VGS m knh dn bt u c hnh thnh dn n s tng nhiu dng mng
c gi l in p ngng VTN , (hay cn gi l VGS (Th) trong cc s tay tra cu cc dng c bn
dn).
Do knh dn khng tn ti v c tng cng bng vic p dng mt in p Cng-Ngun
c gi tr dng, nn MOSFET c gi l MOSFET kiu tng cng.
Khi VGS tng ln vt qua mc ngng th mt cc ht ti in t do trong knh dn c to
thnh s tng ln, dn n mc dng mng qua knh cng tng ln, nhng nu gi VGS khng
i v tng VDS th dng mng s tng ln n mc bo ha, tc l lc ny dng mng IDS khng
tng do qu trnh tht knh, knh dn bt u hp nht ti pha u vng mng ca knh dn to
thnh (xem hnh 3.6b). p dng nh lut Kirchhoffs theo p i vi cc in p u cc ca
MOSFET ta c:
VDG = VDS - VGS
(3.22)
Nu VGS c gi c nh ti mt tr s no , chng hn 8V v tng VDS t 2 n 5V, th in
p VDG [theo biu thc (3.22)] s gim xung t -6V xung -3V, v in p cng s tr nn
dng thp hn so vi mng. S gim xung in p cng-mng s dn n lm gim lc hp
dn cc ht ti in t do (cc in t) ngay ti vng knh dn to thnh pha u cc mng,
gy nn s gim xung v rng hiu dng ca knh. Cui cng knh dn s gim xung n
im tht knh v trng thi bo ha s c thit lp. Ni cch khc khi tng hn na VDS ti
gi tr khng i ca VGS s khng nh hng n mc bo ha ca IDS cho n khi iu kin
nh thng xy ra.
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i DS = K n vGS VTN DS v DS
i vi: vGS - VTN vDS 0
(3.25)
2
Vng bo ha:
K
2
i vi: vDS vGS - VTN 0 (3.26)
i DS = n (vGS VTN )
2
f) Transistor PMOS kiu tng cng.
Cc transistor MOSFET knh p (transistor PMOS) kiu tng cng c cu to nh hnh 3.10,
mt cch chnh xc l PMOS c cu to bng cc vng bn dn tp ngc vi transistor NMOS,
nhng nguyn l hot ng ca PMOS v c bn ging nh NMOS, ngoi tr cc cc tnh in
p v chiu dng in trn cc cc ca PMOS l ngc li. Cn phi t in p m trn cc
cng so vi cc ngun (vGS < 0 hay vSG > 0) thu ht cc l trng nhm to ra mt lp o
bng bn dn p trong vng knh. Trc ht, c s dn in transistor PMOS kiu tng
cng th in p cng-ngun cn phi m nhiu so vi in p ngng ca PMOS, c k
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hiu l VTP.
gi cho cc tip gip ngun- v mng- c phn cc ngc th vSB v vDB cng phi
thp hn 0. Yu cu ny c tha mn bng cch t in p vSD 0 (vDS 0).
Cc c tuyn ra v c tuyn truyn t ca PMOS kiu tng cng cho hnh 3.11.
Khi in p vGS VTP = -2V (tc l: vDS - VTP = +2V), th transistor ngt. Dng mng s tng
theo cc gi tr dng ca vGS
Cc biu thc dng mng ca transistor PMOS cng tng t nh NMOS, tr chiu dng
mng l ngc li v cc gi tr ca vSG, vSD v vBS by gi l dng.
Cc biu thc quan h dng-p ca transistor PMOS c tm lc nh sau:
i vi tt c cc vng ta u c:
W
iB = 0
K p = pC"ox
iG = 0
(3.27)
L
iSD = 0
i vi: vSG - VTP (vGS VTP) (3.28)
Vng ngt:
Vng tuyn tnh:
v
Vng bo ha:
Kp
(v SG + VTP )2
iSD =
i vi:
vSD vSG + VTP 0
(3.30)
2
Trong cc biu thc trn c s khc nhau thng s quan trng gia hai loi NMOS v PMOS
l Kp v Kn. cc dng c PMOS, cc ht ti in trong knh dn l cc l trng, v dng in
l t l thun vi linh ng ca l trng p. linh ng in hnh ca l trng ch bng 40%
linh ng ca in t, v vy i vi cc iu kin in p cho, th dng c PMOS s ch
dn in bng 40% dng in ca dng c NMOS.
g) in dung trong cc transistor MOSFET.
Trong tt c cc dng c bn dn u c in dung ni, cc in dung ny s hn ch dng c
lm vic tn s cao. Trong cc ng dng mch s, cc in dung ny lm cho tc chuyn
mch ca mch gim nhiu, cc in dung cng s hn ch v mt tn s m mch khuych i
ng l c th nhn c.
Cc in dung ca transistor NMOS
hot ng ch tuyn tnh.
Hnh (a) ch r cc in dung khc nhau
lin quan vi MOSFET lm vic ch
tuyn tnh, m trong c mt knh
dn kt ni hai vng ngun v mng. Gi
tr ca in dung cng-knh dn l:
CGC = C"oxWL
(3.31)
ch tuyn tnh, CGC c phn chia
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thnh hai phn nh nhau: in dung cng-ngun CGS v in dung cng-mng CGD, mi in
dung bao gm mt na gi tr in dung cng-knh cng vi gi tr in dung chng ln gia
vng cng-ngun hay vng cng-mng.
'
thng c quy nh nh in dung ca lp
in dung chng ln [overlap capacitance] COL
xt trn mt n v rng knh dn. Cc gi tr in dung khng tuyn tnh ca tip gip pn
c rt ra bi cc in dung ngun- v mng-, CSB v CDB ty vo ch lm vic ca
transistor NMOSFET.
Cc in dung ca transistor NMOS hot ng ch bo ha.
Khi MOSFET lm vic ch bo ha,
hnh (b), mt phn knh dn s bin mt
khi in p mng-ngun vt qua im
tht knh. Lc ny, gi tr ca cc in
dung cng-knh v mng-knh s l:
'
"
(WL )
CGS = COL
W + 23 COX
v
'
CGD = COL
W
(3.32)
Cc in dung ca transistor NMOS
hot ng ch ngt.
ch ngt, vng cng-knh dn l
khng tn ti. Cc gi tr ca CGS v CDS
ch bao gm in dung chng ln.
'
CGS = COL
W
'
(3.33)
v CGD = COL
W
Ngoi ra, cn c mt in dung nh CGB
xut hin gia cc cng v cc nh
hnh (c).
T cc biu thc trn, r rng l cc in
dung ca MOSFET ph thuc vo ch
lm vic ca transistor v l mt hm phi
tuyn theo in p t vo cc cc ca MOSFET. Cc in dung ny s c xem xt trong cc
mch s v tng t.
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Kn
(VGS VTN )2 = 0 ,061 x 10 3 (VGS 3V )2 Vi VGS = 5V, th: ID = 0,244 mA. Vi VGS = 8;
2
10; 12; v 14V, ID s l 1,525; 3 ( c xc nh trang s liu); 4,94; v 7,38mA tng ng.
c tuyn truyn t c v nh hnh 3.13.
3.3 MOSFET KIU NGHO.
a) MOSFET kiu ngho knh- n.
Nh xt phn u ca chng, ngoi MOSFET kiu tng cng cn c MOSFET kiu
ngho [Depletion-type MOSFET hay c th gi tt l DE MOS].
i vi cu to ca NMOS kiu ngho hay knh c sn ( c tho lun phn 3.1), khi in
p cng-ngun bng 0V (bng cch ni tt cc ngun vi cc cng) v t trn hai cc mng v
ngun mt in p VDS > 0V, th in p dng ti cc mng s thu ht cc in t t do trong
knh dn n, tc l c dng in chy qua knh dn. Trong thc t, dng to thnh khi VGS = 0V
thng c gi l IDSS nh m t c tuyn hnh 3.14. Khi thit lp trn cc cng mt in p
m, chng hn VGS = 1V , th in th m ti cng s c khuynh hng y cc in t v pha
bn dn tp-p (y cc in tch cng du) v thu ht cc l trng t bn dn p (ko cc
in tch ngc du) nh hnh 3.15. Ty thuc vo gi tr ca in p phn cc m c thit
lp bi VGS m mc ti hp gia in t v l trng s xy ra v nh vy s lm gim s
lng cc in t t do trong knh dn n cn cho s dn in. in p phn cc m ln hn, th
t l ti hp s cao hn. Mc dng mng to thnh v vy s gim xung khi tng in p phn
cc m cho VGS nh c tuyn truyn t hnh 3.14. Chng hn nh khi: VGS = - 1V; - 2V; . . . .
; cho n mc tht l: - 6V, th mc dng mng trn c tuyn s gim dn v 0mA (ngt). i
vi cc gi tr ca VGS dng, th in p dng ti cng s ko thm cc in t (cc ht ti
in t do) t bn dn-p nh c dng r ngc v s pht sinh cc ht ti in mi thng qua
s va chm to thnh gia cc ht tch in khi c gia tc.
iD =
Khi in p cng-ngun tip tc tng ln theo chiu dng, th dng mng s tng ln theo tc
rt nhanh (hnh 3.14). Khong cch theo chiu dc gia hai gi tr VGS = 0V v VGS = +1V
ca c tuyn truyn t ch r mc dng tng ln nhiu khi thay i VGS trong khong 1V. V
s tng dng mng rt nhanh, nn khi s dng DMOS, cn phi trnh cho DMOS lm vic c
dng mng ln nht, v dng mng c th vt qu vi mt in p cng dng., v d nh i
vi DMOS cho hnh 3.14, khi t mt in p VGS = +4V s cho dng mng l 22,2mA, c kh
nng vt qu cc thng s lm vic ln nht (dng hoc cng sut) ca dng c. Nh vy, vic
p dng in p cng-ngun dng, tng cng mc cc ht ti in t do trong knh
dn ln nhiu so vi mc ht ti in t do ti VGS = 0V. V l do ny m vng tng ng vi
cc in p cng dng trn cc c tuyn dng mng v truyn t thng c xem nh vng
tng cng, cn vng tng ng gia mc dng ngt (IDS = 0) v mc dng bo ha (IDS = IDSS)
c coi nh vng ngho.
Quan h dng-p MOSFET kiu ngho tng t nh MOSFET kiu tng cng. Gi tr in
p VTN (cn c gi l in p tht [pinch-off voltage] VP) tng ng vi dng mng bng 0,
knh dn hon ton bin mt hay ni cch khc l knh dn b tht hon ton. Gi tr IDSS l mc
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K
K
v
2
2
= n (vGS VP ) = n ( VP ) 1 GS
2
2
VP
v
hay
i DS = I DSS 1 GS
VP
(3.34)
(3.35)
Kn 2
2I
hoc:
(3.36)
VP
K n = DSS
2
VP2
Cc biu thc m t quan h dng-p u ng cho c vng tng cng v vng ngho, nhng
cn phi xc nh du thch hp cho VGS ca DMOS hot ng ch tng cng knh v
ngho knh.
V d 3.2: Hy v c tuyn truyn t ca mt MOSFET kiu ngho c IDSS = 10mA v VP = 4V.
Gii: v c tuyn truyn t vi cc thng s cho trn, trc ht ta hy xc nh cc
im c bit trn c tuyn nh sau:
Ti gi tr VGS = 0V, ta c: ID = IDSS = 10mA.
Ti gi tr VGS = VP = - 4V, th ID = 0.
Vi VGS = VP/2 = -4V/2 = -2V, ID = IDSS/4 = 2,5mA
v ti gi tr ID = IDSS /2, ta c VGS = 0,3VP = - 1,2V.
Trc khi v vng ng vi VGS dng, ta hy nh rng ID tng rt nhanh theo cc gi tr dng
ca VGS, nn y ta s th chn VGS = +1V, ta c:
I DSS =
V
+ 1V
I D = I DSS 1 GS = 10 mA 1
VP
4V
= 10 x 1,5625 mA = 15 ,63mA
c tuyn truyn t c v nh hnh 3.16.
b) MOSFET kiu ngho knh-p.
Cu trc ca DE MOS knh-p, ni mt cch chnh xc l ngc vi cu trc ca DE MOS knhn nh c xt hnh 3.1d. Tc l, c thanh bn dn-n v knh dn lp sn bng vng bn
dn-p. Cc cc vn c xc nh nh i vi DE MOS knh-n, nhng tt c cc tnh ca in
p v chiu dng in l ngc li nh m t hnh 3.17a.
2
c tuyn dng mng c dng nh hnh 3.17c, nhng VDS c gi tr m hay VSD, ID c gi tr
dng nh c ch r trn c tuyn (v chiu dng in c xc nh l ngc li).
n gin cho vic v c tuyn gc phn t th nht, ta c th hiu cc gi tr ca p v dng
l: - VDS = VSD v - IDS = ISD tc cng chnh l dng ID nh c quy c.
BIN SON DQB, B/M TVT-HKT
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c tuyn truyn t ca DE MOS knh-p c dng nh hnh 3.17b. Dng mng s tng ln t
im ngt ti VGS = VP trong vng cc gi tr VGS dng n IDSS v sau tip tc tng khi tng
dn cc gi tr m ca VGS . Phng trnh dng-p xt MOSFET trn vn c th p dng
c cho DE MOS knh-p, nhng cn phi vit du chnh xc cho c VGS v VP trong cc
phng trnh. K hiu mch ca DEMOS knh-p cho hnh 3.17d.
c) Cc thng s ca transistor DE MOS:
Cc thng s ca mt DE MOS knh-n ba cc mang s hiu 2N3797 do hng Motorola (M)
sn xut cho hnh 3.18.
Qua cu trc v nguyn tc hot ng ca cc loi transistor MOSFET xt trn, th hin r
tnh i xng ca cc dng c MOS. Cc ng vai tr nh cc ngun, thc t c xc nh bi
cc in p ngoi t vo. Dng in c th chy qua knh dn theo c hai chiu, ty thuc vo
in p t vo. i vi cc transistor NMOS, vng n+ m ti c kt ni vi mc in p
cao hn s l cc mng v vng n+ cn li c ni vi mc in p thp hn s l cc ngun.
i vi cc transistor PMOS, vng p+ m ti c kt ni vi mc in p thp hn s l cc
mng v vng p+ cn li c ni vi mc in p cao hn s l cc ngun. Trong cng ngh
ch to cc dng c bn dn, tnh i xng rt hu ch trong mt s ng dng, c th l trong
cc b nh truy xut ngu nhin ng (DRAM) [Dynamic Random-Access Memory].
Bng 3.1 s tm tt cc gi tr in p ngng cho c bn loi transistor NMOS v PMOS.
BNG 3.1: c tnh ca cc transistor MOS
NMOS
PMOS
Kiu tng cng
VTN > 0
VTP < 0
Kiu ngho
VTN 0
VTP 0
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Cu to ct ngang v k hiu mch ca JFET knh n c cho hnh 3.19, bao gm mt knh
hp bng vt liu bn dn n, (c nng pha tp thp hn vng cng) m hai u c ni vi
hai in cc bng kim loi gi l cc ngun (S) v mng (D) nh MOSFET. Trong phm vi
vng knh dn l hai vng vt liu bn dn p
s to thnh cc cng (G) ca JFET.
Khng ging nh MOSFET, y khng c
s cch ly tch ri vng cng vi knh dn,
m thay vo l cng c kt ni in vi
knh dn thng qua hai tip gip pn.
JFET knh n, dng in chy vo knh dn
ti cc mng v ra ti cc ngun. in tr
vng knh dn s c iu khin bng s
thay i rng vt l ca knh thng qua s
iu bin ca vng ngho bao quanh cc tip
gip pn gia cng v knh dn. vng tuyn
tnh, JFET c th xem n gin nh mt in
tr c iu khin bng in p m in tr
knh dn ca n c xc nh bi:
L
RCH =
(3.37)
tW
Trong : - l in tr sut ca vng knh;
L - l di knh; W - l rng ca knh dn
gia cc vng ngho ca tip gip pn; t - l
dy ca knh dn.
Khi c in p t vo gia mng v ngun,
th in tr knh dn s xc nh dng in
thng qua nh lut Ohm.
Khi khng c in p phn cc t vo (nh
hnh 3.19), th s c mt vng knh dn in
tr tn ti kt ni vng mng v ngun. Vic
p dng mt in p phn cc ngc ln cc
tip gip cng-knh s lm cho vng ngho
c m rng hn, tc l lm gim rng
hiu dng ca knh dn v dng qua knh dn
s gim xung. V vy, JFET thuc v cc
dng c kiu ngho, c ngha l cn phi c
in p t vo cng chuyn JFET v ngng dn.
a) JFET khi ch c in p phn cc cng.
Hnh 3.20a, m t trng thi ca JFET vi in p bng 0V trn cc mng v ngun vGS = 0V.
Lc ny rng ca knh l W.
Trong sut ch lm vic thng thng, mt in p phn cc ngc cn phi c duy tr
qua cc tip gip pn m bo s cch ly gia cng v knh. Yu cu c phn cc ngc s
BIN SON DQB, B/M TVT-HKT
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l: vGS 0V.
Hnh 3.20b, l trng thi ca JFET khi vGS c gim xung n mt gi tr m, lm cho
rng vng ngho tng ln, tc l lm tng in tr ca vng knh dn. rng ca knh dn
by gi gim xung, vi W < W. Do tip gip cng-knh c phn cc ngc, dng cng s
bng dng bo ha ngc ca tip gip pn, thng l mt gi tr rt nh nn y ta c th xem
iG 0.
i vi cc gi tr ca vGS m hn, th rng knh dn s tip tc gim xung, lm cho in tr
ca vng knh tip tc tng ln. Cui cng, s t n trng thi ca JFET nh hnh 3.20c, tc
l in p cng-knh t n gi tr in p tht [pinch-off voltage] vGS = VP. in p tht VP l
gi tr (m) ca in p cng-ngun tng ng ti thi im vng knh dn bin mt hon ton.
Knh dn s tr nn tht li khi hai vng ngho ca hai tip gip pn kt hp vi nhau ti trung
tm ca knh dn. Lc ny, in tr ca vng knh s tr nn v cng ln. Nu tng vGS m hn
na, v thc cht khng nh hng n bn cht bn trong ca JFET hnh 3.20c, nhng vGS
phi khng c vt qu in p nh thng ener ca tip gip cng-knh.
b) Trng thi knh dn ca JFET khi c in p cung cp cc mng-ngun.
Khi tng gi tr ca in p mng-ngun v c nh gi tr ca vGS, ta thy rng: i vi mt gi
tr nh ca in p mng-ngun, nh cho hnh 3.21a, th s c mt knh in tr kt ni gia
mng v ngun, JFET lm vic vng tuyn tnh v dng mng s ph thuc vo in p
mng-ngun vDS. Vi gi thit iG 0, dng vo ti cc mng v ra cc ngun nh
MOSFET. Tuy nhin, hy lu rng in p phn cc ngc qua cc tip gip cng-knh ti
u knh dn pha cc mng s ln hn so vi in p u knh dn pha cc ngun, v nh vy
vng ngho s rng hn ti u knh dn pha cc mng ca JFET so vi u knh dn pha cc
ngun.
i vi cc gi tr ca vDS ln hn, th vng ngho ti pha cc mng s tr nn rng hn v tip
tc m rng cho n khi knh dn tht li gn cc mng nh hnh 3.21b. Vic tht knh xy ra
trc ht ti:
vGS - vDSP = VP
hay:
vDSP = vGS - vP
(3.38)
Trong , vDSP l gi tr ca in p mng cn c knh dn va c tht. Khi knh dn ca
JFET tht li, th dng mng s bo ha, vn ging nh i vi MOSFET. Cc in t c gia
tc qua knh dn, c phng thch vo vng ngho, v c cun vo vng mng bi in
trng.
Hnh 3.21c, l trng thi ca JFET i vi cc gi tr ln hn na ca vDS. im tht s di
chuyn tin v pha cc ngun, thu ngn chiu di ca vng knh in tr. Nh vy, JFET chu
s iu bin di knh tng t nh MOSFET.
Hnh 3.20b, l trng thi ca JFET khi vGS c gim xung n mt gi tr m, lm tng
rng vng ngho, tc l lm tng in tr ca vng knh dn v rng ca knh dn lc ny
gim xung, vi W < W. Do tip gip cng-knh c phn cc ngc, dng cng s bng dng
bo ha ngc ca tip gip pn, thng l mt gi tr rt nh nn y ta c th xem iG 0. i
vi cc gi tr ca vGS m hn, th rng knh dn s tip tc gim xung, lm cho in tr ca
vng knh tip tc tng ln. Cui cng, s t n trng thi ca JFET nh hnh 3.20c, tc l
in p cng-knh t n gi tr in p tht [pinch-off voltage] vGS = VP. in p tht VP l gi
tr (m) ca in p cng-ngun tng ng ti thi im vng knh dn bin mt hon ton.
Knh dn s tr nn tht li khi hai vng ngho ca hai tip gip pn kt hp vi nhau ti trung
tm ca knh dn. Lc ny, in tr ca vng knh s tr nn v cng ln. Nu tng vGS m hn
na, v thc cht khng nh hng n bn cht bn trong ca JFET hnh 3.20c, nhng vGS
phi khng c vt qu in p nh thng ener ca tip gip cng-knh.
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hn
h
3.2
1b.
Vi
c
tht
knh xy ra trc ht ti:
vGS - vDSP = VP hay: vDSP = vGS - VP (3.38)
Trong , vDSP l gi tr ca in p mng cn c
knh dn va c tht.
Khi knh dn ca JFET tht li, th dng mng s
bo ha, vn ging nh i vi MOSFET. Cc in
t c gia tc qua knh dn, c phng thch vo
vng ngho, v c cun vo vng mng bi in
trng gia mng v ngun.
Hnh 3.21c, l trng thi knh dn ca JFET i vi cc gi tr ln hn na ca vDS. im tht s
di chuyn tin v pha vng ngun, thu ngn chiu di ca vng knh in tr. Nh vy, JFET
chu s iu bin di knh tng t nh MOSFET.
c) H c tuyn i-v ca JFET knh-n.
Mc d cu to ca JFET khc rt nhiu so vi MOSFET, nhng h c tuyn i-v ca JFET hu
nh ging vi h c tuyn ca MOSFET, do vy y ta c th da vo s tng t ny v d
dng nhn c cc phng trnh ca JFET. Tuy nhin, du cho c s tng ng v m t
ton hc th cc phng trnh ca JFET thng c vit hi khc so vi cc phng trnh ca
MOSFET. Ta c th kho st cc phng trnh ny bt u vi cc biu thc i-v cho vng bo
ha ca MOSFET, m trong in p ngng VTN s c thay th bng in p tht VP, ta c:
i DS
BIN SON DQB, B/M TVT-HKT
K
K
v
2
2
= n (vGS VP ) = n ( VP ) 1 GS
2
2
VP
(3.39)
CU KIN IN T
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2
v
i DS = I DSS 1 GS
hoc c th vit:
i vi: vDS vGS - VP 0
(3.40)
VP
i DS = DSS
khi vGS VP , v vDS vGS - VP
(3.42)
vGS VP DS v DS
2
2
VP
Cc phng trnh (3.40) v (3.42) biu din m hnh ton hc ca JFET knh-n.
cc ti liu tra cu thng s linh kin, in p tht VP thng c cho dng VGS (off). Vng
bn phi ca ng t nt biu din v tr cc im tht ca hnh 3.23 l vng lm vic c s
dng nhiu trong cc b khuych i tuyn tnh (tc cc b khuych i c mo tn hiu nh
nht) v thng c xem nh vng c dng in khng i, vng bo ha hoc vng khuych
i tuyn tnh.
Vng in tr c iu khin bng in p l vng bn tri v tr ca cc im tht knh hnh
3.23 c gi l vng thun tr [ohmic region] hay l vng in tr c iu khin bng in
p. vng ny, JFET c th ng vai tr thc s nh mt in tr bin i, tc l in tr ca
JFET c iu khin bng in p cng-ngun t vo.
Theo hnh 3.23, ta thy rng: dc ca mi c tuyn chnh l in tr ca JFET gia mng v
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rD =
r0
(3.43)
(1 VGS / VP )2
trong : r0 l gi tr in tr ng vi VGS = 0V v rD l gi tr in tr ti mt mc c th ca
VGS. i vi mt JFET knh-n c r0 bng 10k (VGS = 0V, VP = - 6V), biu thc (3.43) s cho
rD = 40 k ti gi tr VGS = - 3V.
e) JFET knh-p.
JFET knh-p c ch to bng cch o li cc cc tnh ca cc vng bn dn tp n v p hnh
3.19, nh c m t trong hnh 3.24. Cng nh i vi PMOSFET, chiu dng in trong knh
dn l ngc vi chiu dng trong knh dn ca JFET knh-n, v cc cc tnh ca cc in p
phn cc khi lm vic l ngc li.
* Tm li, JFET lm vic da trn s phn cc ngc tip gip pn gia cng v knh dn. iu
ny s hnh thnh nn vng ngho bao quanh knh dn.
Nu gia hai cc mng v ngun c t mt in p th s c dng in chy qua knh dn,
v vi in p phn cc ngc trn tip gip cng-knh nn dng cng ch l dng r ngc rt
nh, c th b qua. in p phn cc ngc cng-knh cng s y cc ht ti a s trong knh
dn b vo vng cng, v vy s lm tng kch thc ca vng ngho, dn n lm gim tit din
ct ngang ca knh dn v nh vy lm gim dn in ca knh dn. Khi in p trn tip
gip cng-knh cng phn cc ngc hn na th rng hiu dng ca knh dn cng gim
cho n khi dng mng-ngun chy qua knh dn ngng hon ton. Ch lm vic ny ca
JFET tng i ging vi MOSFET kiu ngho nn JFET cng c phn cc tng t nh
mt MOSFET kiu ngho. Hn na, trong cc mch s dng JFET phi c thit k sao cho
m bo diode cng-knh lun lun c phn cc ngc. iu ny khng lin quan i vi
MOSFET.
i DS = DSS
iu kin vGS VP v DS 0
(3.46)
vGS VP DS v DS
2
2
VP
Vng bo ha:
JFET knh-p.
Vng ngt:
v
i DS = I DSS 1 GS
VP
iG 0
iu kin
v DS vGS VP 0
(3.47)
(3.48)
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iSD = 0
iu kin
iSD = DSS
v SG + VP SD v SD
2
2
VP
Vng bo ha:
iu kin
v SG > VP
v SG + VP v SD 0
(3.49)
(3.50)
v
iu kin
iSD = I DSS 1 + SG
VP
f) Cc thng s ca JFET.
Cc thng s k thut ca mt JFET knh-n cho hnh 3.25
v SD v SG + VP 0
(3.51)
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v
T phng trnh (3.40), i vi JFET ta c: i D = I DSS 1 GS
VP
v
2I
(3.53)
g m = DSS 1 GS = 2 DSS x i D
VP
VP
VP
Vy, i vi JFET, gm t l thun vi cn bc hai ca dng mng. C th thc hin phn tch
tng t nhn c kt qu tng t cho MOSFET.
m hnh tng ng ca FET (hnh 3.28), rd tng trng cho in tr mng, tc l in tr
tn hiu nh t cc mng n cc ngun. S c
mt ca rd c ngha l in p mng-ngun s
tng ln theo dng mng v in tr rd s cho bit
s tng dc ca c tuyn trong vng bo
ha c tuyn ra ca FET.
Mch tng ng tn hiu nh l mt m hnh c
th dng biu din hot ng ca dng c, p
ng vi nhng thay i nh ca tn hiu vo. Tuy nhin, mch tng ng tn hiu nh phi
c s dng chung vi cc d liu trn c tuyn dc ca dng c, tc l hot ng ca dng c
p ng vi cc in p dc c th.
Nh xt cc phn trn, h c tuyn dc ca MOSFET v JFET l khng ging nhau v
ch lm vic thng thng ca FET, yu cu cc in p phn cc t vo cng khc nhau.
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CU KIN IN T
80
in p t ngang qua chng phi l tng in p gia hai ng ngun cung cp (VDD - VSS).
in p ngang qua FET c xc nh bi h c tuyn ra ca FET v in p phn cc VGS. T
cc h c tuyn ra ca FET, c th thy rng, dng c bn ca h c tuyn ra ca FET l
ging nhau, s khc nhau ln nht l gi tr in p t vo cng VGS. Khi c dng in chy qua
FET v cng chy qua in tr ti s to ra st p trn chng. in p trn cc mng ca FET c
th xc nh theo biu thc:
VDS = VDD - IDRL.
xc nh ng ti, ta hy tnh in p trn cc mng ca FET (VDS) theo cc gi tr khc
nhau ca dng mng (IDS). Khi dng mng bng 0, th s khng c st p trn in tr ti v in
p mng s n gin l in p ngun cung cp VDD. Khi dng mng IDS tng ln, th in p
mng VDS gim, dc ca ng thng s l nghch o ca in tr ti RL. iu kin lm vic
thc t ca mch phi tha mn c hai quan h gia dng mng v in p mng l quan h h
c tuyn ra v quan h ng ti. xc nh iu kin ny, cn phi v c hai c tuyn
nh hnh 3.31. ng thng trong hnh c gi l ng ti, n cho bit nh hng ca in
tr ti lm gim in p mng. S giao cho ca ng ti vi mt trong nhng c tuyn ra s
tng ng vi im m ti c hai quan h trn l c tha mn. Chng hn, xt im A trn
ng ti hnh 3.31, th cho bit rng nu VGS c thit lp ti gi tr VGS(A) , th dng
mng s l ID(A) v in p mng (cng chnh l in p ra ca mch khuych i) s l VDS(A).
th hnh 3.31 gip ta thy c ngha ca ng ti lu rng khi in p t ngang
qua FET cng vi in p ngang qua RL phi bng vi in p ngun cung cp VDD, khong
cch t im 0 n VDS(A) tng ng vi in p t ngang qua FET, v khong cch t VDS(A)
n VDD tng ng vi in p st trn in tr
ti.
Khi in p t vo cng tng ln n gi tr
VGS(B), th dng mng s tng ln v in p
mng s gim xung, nh c ch dn bi im
B trn c tuyn. Do vy, ng ti m t dng
mng v in p mng thay i theo cc gi tr
khc nhau ca in p cng. th hnh 3.31
m t cc c tuyn ca mt mch khuych i
vi mt gi tr RL cho. Nu gi tr in tr ti
thay i th dc ca ng ti s thay i, o
lm nh hng n c tnh ca mch
khuych i. Trong thc t, ngi thit k
thng phi i din vi vn chn mt gi tr
cho RL c hiu sut ti u nht. lm c
iu ny, cn phi xc nh im lm vic tng
ng vi v tr trn c tuyn cc iu kin tnh.
V vy, khi thit k mch ng dng, thng phi
bt u vi h c tuyn ra ca FET v xc nh gi tr ca in tr ti bng cch chn la im
lm vic l tng cho mch. V d, gi s s chn im lm vic tng ng vi im A trn
hnh 3.31, mt ng thng s c v tip theo qua im c chn n v tr VDD trn trc
ngang v to thnh ng ti. Gi tr ca RL cn thit c th suy ra bng cch tnh dc ca
ng ti . Khi bit im lm vic th s bit gi tr in p cng yu cu, v mch phn cc
cn thit phi c thit k theo in p cng .
im lm vic xc nh trng thi tnh ca mch v nh vy s nh c dng mng tnh v
in p ra. Khi t mt tn hiu nh vo li vo ca mch, th s bin i in p cng s lm
cho im lm vic ca mch di chuyn dc trn ng ti theo c hai pha ca im lm vic
tnh. Nu tn hiu vo ln ng k, th s lm cho hot ng ca mch chuyn vo vng ohmic
(vng tuyn tnh) hoc n gii hn nh in p ra t ti in p ngun cung cp. C hai trng
thi s lm mo dng tn hiu ra.
b) Cc kiu mch phn cc.
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Hnh 3.32a l mch phn cc n gin nht cho JFET knh-n, c gi l mch phn cc c
nh, n l mt trong s cu hnh phn cc cho FET c th c gii trc tip bng cch dng
phng php tnh trc tip hay bng phng php th. Mch cho hnh 3.32a bao gm cc
mc in p ac Vi v Vo, v cc t ghp (C1 v C2). Cc t ghp l h mch i vi tn hiu dc
v c tr khng thp (thc cht l ngn mch) i vi tn hiu ac. in tr RG m bo tn
hiu vo Vi c ti li vo ca mch khuych i FET i vi tn hiu ac.
ch dc, ta c:
IG 0A v VRG = I G RG = 0 V.
St p qua RG bng 0, cho php thay th RG bng mch tng ng nh hnh 3.32b, c v
li theo ch dc. p dng nh lut Kirchhoffs theo in p ca vng mch theo chiu kim
ng h hnh3.32b, ta c:
VGS = VGG
(3.54)
Do VGG l ngun dc c nh, in p VGS c gi tr khng i nn mch c tn gi l mch phn
cc c nh.
Gi tr dng mng c xc nh hon ton trc tip qua tnh ton theo phng trnh Shockleys
bit phng trnh (3.47):
V
I D = I DSS 1 GS
VP
V
I D = I DSS 1 GS
VP
Phng php phn tch bng th da vo c tuyn truyn t ca FET. Bng cch chn cc
gi tr ca VGS ti cc im, ta s v
c c tuyn truyn t, chng hn,
chn:
VGS = VP / 2, ta s c dng mng tng
ng l: IDSS / 4. Quan h iD = f(vGS)
c v nh hnh 3.33a.
Gi tr khng i ca VGS c v
thnh mt ng dc ti:
VGS = - VGG.
Ti im bt k trn ng dc, tr s
ca VGS l - VGG v tr s ca ID phi
c xc nh theo ng dc ny.
BIN SON DQB, B/M TVT-HKT
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82
(3.59)
Lu trong trng hp ny VGS l
mt hm s ca dng ra ID v c tr s
khng phi l c nh nh mch
phn cc c nh.
Phng trnh (3.59) c xc nh
bng cu hnh mch v phng trnh
Shockleys s cho mi lin h gia
cc i lng vo v ra ca dng c.
C hai phng trnh lin quan hai bin
s nh nhau nn s cho php tm
nghim chung ca chng theo c hai
cch: hoc l tnh trc tip hoc bng
th.
+ Phng php tnh trc tip c th nhn c n gin bng cch thay th biu thc (3.59) vo
phng trnh Shockleys nh sau:
2
V
I R
I D RS
= I DSS 1 + D S
I D = I DSS 1 GS = I DSS 1
VP
VP
VP
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hay
Ngoi ra:
VD = VDS + VS = VDD VR D
(3.60)
(3.61)
(3.62)
(3.63)
VG VGS VRS = 0
VGS = VG VRS
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84
Thay VRS = I S RS = I D RS , ta s c:
VGS = VG I D RS
(3.65)
Cc i lng VG v RS l khng i bi cu trc mch. Phng trnh (3.65) vn l phng trnh
ca mt ng thng nhng im gc b dch i mt khong trn trc ngang l VG,
nh hnh 3.37a, khi chn gi tr dng ID = 0mA.
(3.66)
VGS = VG I = 0 mA
D
VG
RS
(3.67)
VGS = 0V
(3.68)
(3.69)
(3.70)
VDD
(3.71)
R1 + R2
- cc phn trn y ta xt cc mch phn cc khc nhau cho JFET knh-n, c th phn tch
hon ton tng t ch dc cho mch dng MOSFET kiu ngho knh-n.
im khc bit chnh gia hai loi ch: MOSFET kiu ngho knh-n c th c cc im lm
vic vi cc gi tr dng ca VGS v cc mc ID vt qu tr s IDSS.
Trong thc t, i vi tt c cc cu hnh phn cc xt trn u c th c dng phn
tch nu thay JFET bng MOSFET kiu ngho.
I R1 = I R 2 =
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85
VGS = VDD I D RD
(3.74)
(3.75)
Phng trnh (3.75) l phng trnh ng thng, cho php xc nh qua hai im trn hai trc
ca thi. Thay ID = 0mA vo phng trnh (3.75), ta c:
VGS = VDD I = 0 mA
(3.76)
D
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ID =
VDD
RD
(3.77)
VGS = 0V
V
i vi mch ra:
VRS + VDS
VGS = VG I D RS
+ VR D VDD = 0 v
(3.78)
(3.79)
VDS = VDD VRS VR D
VDS = VDD I D ( RS + RD )
(3.80)
hay:
Khi c cc c tuyn ca ID theo VGS v phng trnh (3.79), ta c th v hai c tuyn trn cng
mt th v li gii c xc nh ti im giao nhau ca chng. Vi cc tr s ca I DQ v
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tip gip cng. Mt trong nhng gii hn bt buc khc l cn phi hn ch dng mng hoc
in p cng ln nht c th c s dng.
Vng C l vng in p nh thng ca FET, nu vt qu gi tr in p nh thng, vi thi
gian lu s rt nguy him cho dng c. Cui cng, vng cm th t c khng ch bi cc
iu kin tiu tn cng sut. Cng sut c tiu tn FET c cho bi tch ca dng in
mng v in p mng (v dng cng l khng ng k) v dn n pht sinh nhit nng. Nhit
nng ny s lm cho nhit ca dng c tng ln nn hot ng ca dng c phi c hn ch
bng nhit cho php ca tip gip. Vng lm vic tha mn cc iu kin tiu tn cng sut
c gii hn bi ng hyperbola (tc l v tr cc im m khi dng nhn vi in p bng
mt hng s) nh m t bi vng D trn hnh 3.41.
Khi chn im lm vic cho mch khuych i, phi m bo mi transistor c gi trong
phm vi cc gii hn an ton v trong phm vi vng lm vic nh mc ca n. iu ny thng
yu cu in p cung cp thp hn so vi in p nh thng ca dng c, cng nh gi tr dng
mng v cc gii hn v cng sut ln nht khng b vi phm.
c dao ng in p ln nht th im lm vic thng c t gn gia ng ti nh
hnh 3.41, iu ny cho php truyn tn hiu vo ln nht trc khi tn hiu ra mo dng.
V d 3.3: Hy thit k mch phn cc ca mt b
khuych i cho JFET knh-n 2N5486 bng cch s
dng c tuyn truyn t ca dng c v bng cch
tnh trc tip. Bit VP = - 6V v IDSS = 8mA; ngun s
dng VDD = 15V v in tr ti RL = 2,5k; mch
khuych i c in p ra tnh l 10V.
Gii: Mch khuych i thch hp c cho nh hnh
v bn,
T biu thc (3.47) ta bit rng:
2
v
i D = I DSS 1 GS
VP
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I DQ =
VoQ
RL
5V
= 2 mA
2 ,5 k
V
I D = I DSS 1 GS
VP
suy ra:
VGS = VP 1
ID
I DSS
= 6 1
2
8
) = 3 V.
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ri = RG = 1M
(a)
(b)
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(b)
iD
iD = gm vGS = gm (vG v S )
vGS
V in p ti cc ngun vS c cho bi: vS = RSid , nn suy ra:
RS g m
1
vS =
vG =
vG
1
1 + RS g m
+1
RS g m
Nu 1/ RSgm << 1, suy ra vS vG. Ni cch khc, in p cc ngun (in p ra) c khuynh
hng lp li gi tr in p cng (in p vo). V l do ny m cc mch trn thng c gi
l mch lp li ngun [source followers]; khi tn hiu ra lp li tn hiu vo, nn cc mch
loi ny l mch khuych i khng o.
Do tn hiu ra ca mch lp li ngun rt gn ging nh tn hiu vo, nn h s khuych i ca
mch khuych i l vo / vi xp x bng n v. Trong nhiu trng hp, cc mch c s dng
v in tr vo ca chng rt cao v in tr ra ca mch tng i thp. in tr vo c xc
nh bi in tr cng RG,v in tr ra c xc nh bng nhng c tnh ca FET. xc
nh in tr ra ca mch, cn phi bit in p ra vS s thay i theo dng ra iS, nh th no,
khi khng c bt k s thay i no li vo.V vy, in tr ra ca mch ro l t s vS / iS, vi
gm =
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vG = 0.
Nh trn ta c: i D = g m vGS = g m (vG v S ) , thay th vG = 0, ta c:
i D = g m vGS = g m (0 v S )
Do dng cng l khng ng k, nn gi tr ca dng ngun bng gi tr ca dng mng. Nhng
cc dng ny c xt theo chiu quy c l chy vo dng c v do , iS = - iD.
v
1
v
V vy:
rD = S =
iS = i D = g m v S
iS
gm
V gm bin i theo dng mng, nn in tr ra cng s thay i theo dng mng, nhng gi tr
in hnh ca in tr ra l vi trm ohm i vi dng l vi trm miliampere.
Cc mch lp li ngun c gi tr in tr vo khng thp nh mch lp li emitter dng
transistor bipolar (s xt chng tip theo), vi in tr vo rt cao ca mch lp li ngun,
lm cho mch c s dng nhiu, nh cc b khuych i m, c h s khuych i bng
n v.
c) Mch khuych i vi sai.
Cc mch khuych i vi sai l mch c th to mt tn hiu ra t l vi s khc bit gia hai tn
hiu vo v c kh nng loi b cc tn hiu cng pha c hai li vo, c tnh sau c xem
nh s kh b tn hiu cng pha [common-mode rejection].
Hnh 3.45a, l dng thng thng ca mch khuych i vi sai thng c dng cc tng vo
ca cc b khuych i thut ton.
Hai mch khuych i FET c phn chia mt in tr ngun chung RS, v cc in tr cng
v mng ca mi mch c cc gi tr bng nhau. Cc FET c chn c c tnh nh nhau
mch c tnh i xng. Mch c hai u vo v1 v v2, v hai u ra v3 v v4. S tng ng
ch tn hiu nh ca mch khuych i vi sai cho hnh 3.45b.
in p vo v in p ra c o vi im tham chiu chung (t). Cc in tr cng thng
c chn ln t nh hng ln hot ng ca mch v hn na l thit lp cc iu kin
phn cc dc thch hp cho FET, do vy cc in tr cng c b qua trong mch tng ng
tn hiu nh. Vi gi thit rng cc linh kin trong mch l i xng nhau, c in dn gm v
in tr mng rd ca c hai mch l bng nhau.
Do in p vo v1 v v2 c o i vi t, nn in p t ngang qua tip gip cng-ngun ca
mi FET l:
vGS 1 = v1 v S
v
vGS 2 = v 2 v S
T nh lut Kirchhoffs, ta thy rng: Tng cc dng in chy vo mt nt no ca mch
bng 0.
p dng nguyn tc trn cho mt s im trong mch tng ng, ta c cc phng trnh ng
thi nh sau:
Xt ti im P1 ta c:
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g m vGS 1 +
(v 3 v S ) + g
m vGS 2
(v 4 v S )
vS
=0
RS
rd
rd
Thay th vGS1 v vGS2 c trn, ta c:
(v v S ) + g (v v ) + (v 4 v S ) v S = 0
(3.82)
g m (v 1 v S ) + 3
m 2
S
rd
rd
RS
p dng cho im P2 ta c:
v3
v
v
(3.83)
+ 4 + S =0
RD RD RS
V ti im P3 ta c:
v 3 (v 3 v S )
(3.84)
+
+ g m (v1 v S ) = 0
RD
rd
T cc phng trnh trn, ta c th suy ra biu thc cho cc in p ra ca mch v3 v v4 theo
cc s hng ca hai u vo, nhng vic gii kh phc tp. T phng trnh (3.83), ta gi s
rng s hng vS/ RS l rt nh v vy, nh hng ca s hng trn c th b qua; tng ng
vi dng tn hiu nh chy qua in tr ngun RS khng i, tc l lm vic nh mt ngun
dng hng.
Nu b qua s hng vS/ RS, th phng trnh (3.83) tr thnh:
v3
v
(3.85)
+ 4 =0
RD RD
suy ra:
v3 = - v4.
Kt hp kt qu trn vi cc phng trnh (3.82) v (3.84), ta nhn c biu thc cho cc tn
hiu ra:
gm
(3.86)
v 3 = v 4 = (v1 v 2 )
1
1
2 +
rd RD
Nh vy, cc tn hiu ra l bng nhau v ngc chiu cc tnh v gi tr ca chng c xc
nh bng s chnh lch gia cc tn hiu hai li vo, nn gi l b khuych i vi sai.
in p ra vi sai ca mch trn vo c cho bng v3 - v4 v v v3 v v4 l bng nhau v ngc
du, nn h s khuych i ca mch c dng n gin:
v
v v4
gm
H s khuych i in p vi sai = o = 3
=
vi v1 v 2 1
1
+
rd RD
Lu phn xt trn (mc 3.7a) thy rng: rd thng ln hn nhiu so vi RD nn ta c th
n gin biu thc trn:
H s khuych i in p vi sai - gmRD
c dng tng t biu thc n gin ca b khuych i FET xt phn trc.
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Ngi ta cng ch to cc ngun dng hng c kh nng thay i mc dng bng cch s dng
k thut phn cc t ng nh mch cho hnh 3.46c. Dng in chy qua dng c s to nn
mt st p trn in tr, tc l pht sinh mt in p phn cc gia cng v ngun. Tr s ca
in tr ny c hiu chnh to ra dng in hng ty yu cu ca ngi s dng. Cc
ngun dng hng bng FET thng c dng to ra ngun dng cho cc mch khuych i
vi sai, chng hn nh mch hnh 3.47.
e) FET nh mt in tr c iu khin bng in p.
T h c tuyn ra (c tuyn dng mng) ca FET, r rng l: i vi cc gi tr nh ca in
p mng-ngun, cc FET c c tnh c m t nh mt in tr thun [ohmic], bi v dng
mng tng mt cch tuyn tnh theo in p mng. Gi tr ca in tr hiu dng (tng ng vi
dc ca cc c tuyn ra) c iu khin bng in p cng. iu ny cho php FET c
s dng nh mt in tr c iu khin bng in p (VCR) [voltage controlled resistance].
Cc gi tr in tr c th c to ra s thay i t mt vi chc [ohm] (hoc thp hn i
vi FET cng sut) ln n mt vi G (1 G = 1000 M).
ng dng thng thng ca mch ny trong phm vi cc mch iu khin h s khuych i t
ng [automatic gain control circuits]. Khi in p iu khin in tr c ly t mch phn
p vi mt in tr c nh to thnh mt b suy gim c iu khin bng in p [voltage
controlled attenuator] nh mch cho hnh 3.48.
Mch suy gim c dng trong ng hi tip m ca
b khuych i lm thay i h s khuych i ca
mch. in p cung cp cho FET iu khin in tr
ca mch suy gim l c trch t tn hiu ra ca mch
khuych i v c b tr sao cho nu bin in p ra
tng, th lng hi tip m tng, dn n lm gim h s
khuych i ca b khuych i. iu ny cho php duy
tr bin ra ti mt gi tr khng i no c lp vi
bin ca tn hiu vo. K thut ny thng c s
dng, v d nh: gi m lng ca mt my thu radio
khng i, ngay khi cng ca tn hiu radio lun
thay i.
Mt ng dng khc ca cc b suy gim c iu khin
bng in p l trong vic ch to cc b dao ng, m
trong mch iu khin h s khuych i t ng
dng n nh h s khuych i ca b dao ng m
khng lm mo dng tn hiu ra.
Cc mch suy gim c iu khin bng in p c th c s dng vi cc tn hiu vo DC
hay AC, do FET l dng c c tnh i xng trong nguyn tc lm vic ca n (mc d c tnh
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dng c cn phi c in p dng t trn cng to ra knh dn gia vng mng v vng
ngun), v vy dng mng l khng ng k, tc l khng c st p trn in tr R, do in
p ra gn bng vi in p ngun cung cp
VDD (mc logic 1). Khi in p vo gn
bng vi in p ngun cung cp, th
MOSFET s c chuyn sang dn [ON]
v c dng chy qua in tr R, in p ra
gim gn bng vi mc t chung (mc
logic 0). Nh vy, khi in p li vo cao
th s c in p li ra thp v ngc li
nn mch c chc nng ca mt b o.
Mch hnh 3.51a hon ton c th thc
hin vi cc linh kin ri nhng t c
dng trong cc vi mch (IC). Mt trong
nhng l do gii thch ti sao cc MOSFET c s dng rng ri trong cc vi mch s l do
mi MOSFET ch cn mt din tch rt nh trn phin Silicon, nn cho php ch to mt s
lng ln cc dng c trn mt chp n. Ngc li cc in tr thng chim mt t l din
tch ln hn nhiu. Do vy, khi ch to cc mch o logic bng MOSFET ngi ta thng s
dng mch nh hnh 3.51b. Trong , mt MOSFET th hai c dng nh mt ti tch cc,
lm gim nhiu din tch vng Silicon cn thit ch to cc mch o trong cc vi mch.
Tng t, cng c th ch to cc mch o bng MOSFET tng cng knh-p c dng ri v
dng vi mch nh trn.
i) Cc mch CMOS.
Trong cc mch NMOS v PMOS c gii thiu trn, gi tr ca in tr ti R (hoc in tr
hiu dng ca MOSFET c dng thay vo v tr ca in tr) s nh hng n in tr ra ca
mch khi li ra mc cao, v c s tiu tn cng sut ca cng khi li ra mc thp.
Khi in p li vo thp , th chuyn mch MOSFET chuyn v ngng dn [OFF] v li ra c
y ln cao bi in tr ti R. nhn c in tr ra thp th R cn phi nh.
Khi li vo mc cao, th chuyn mch MOSFET s c chuyn sang dn [ON] v li ra c
y xung thp. Do s chuyn mch MOSFET c in tr ON thp nn in tr ra thp, lm cho
mch ht mc dng cao t ti ngoi. Trong trng hp ny hu nh ton b in p ngun cung
cp c t trn in tr ti R to ra mt dng ln v v vy s tiu tn cng sut ln. ti
thiu ha cng sut tiu tn ny th in tr ti cn phi ln.
R rng l cc i hi in tr ra thp v tiu tn cng sut thp l cc yu cu i lp nhau trn
gi tr ca R. Vn ny c th c khc phc bng cch s dng mch nh hnh 3.52.
Trong c hai transistor NMOS v PMOS c ghp thnh mt mch m by gi c m t
nh mch MOSFET b ph [Complementary MOS] hay mch logic CMOS. Khi in p vo
gn bng 0, th dng c knh-n T2 s c chuyn v ngng dn [OFF] nhng dng c knh-p
T1 c chuyn sang dn [ON]. Khi in p li vo gn bng vi mc in p ngun cung cp
th v tr c o ngc, vi T1 ngng [OFF] v T2 dn [ON]. Nh vy, vi c hai trng thi
li vo th mt trong hai transistor s dn [ON] v transistor kia ngng [OFF].
Mch hnh 3.52a c th c tng ng bi mch hnh 3.52b. Vi chuyn mch T1 kn v
T2 h, th li ra s c y ln mc cao v in tr li ra thp, c xc nh bi in tr min tr ON ca T1. Vi T2 kn v T1 h, th li ra s c y xung thp v in tr ra cng
xung thp m by gi c xc nh bi in tr ON ca T2. Trong c hai trng hp, v mt
trong hai chuyn mch c chuyn v ngt [OFF] nn ch c s cung cp dng l dng l dng
ko v bi ti. Nu ti l mt MOSFET khc loi th dng ko v s khng ng k v in tr
vo cao ca cc MOSFET. V vy, c hai trng thi in tr ra ca mch CMOS l rt thp v s
tiu tn cng sut l cc nh. Trn thc t, khi trng thi tnh, th s tiu tn cng sut thng
khng ng k. cc mch ng dng th cng sut c tiu th bi mt mch CMOS c xc
nh bng mt lng nh dng in chy qua khi cc dng c chuyn mch t trng thi ny
sang trng thi khc. Trong mt khong thi gian ngn, c hai transistor u dn, to ra mt
ngn mch t ngt t ngun cung cp n t chung. Do tiu th cng sut thp, nn cc mch
CMOS c s dng rng ri trong cc ng dng lm vic bi ngun cung cp bng pin. Vn
ny s c tho lun trong cc gio trnh khc.
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