Professional Documents
Culture Documents
TM
N-Channel SDMOS POWER Transistor
General Description Features
TO-252
D-PAK Bottom View
Top View D
D
G
S G
S
G S
Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 14.2 20 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 39 50 °C/W
Maximum Junction-to-Case B Steady-State RθJC 2.5 3 °C/W
Maximum Junction-to-TAB B Steady-State RθJC-TAB 2.7 3.2 °C/W
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
100 100
10V 5V
VDS=5V
6V
80 80
4.5V
7V
60 60
ID (A)
ID(A)
4V
40 40
VGS=3.5V 125°C
20 20
25°C
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
18 2
16
1.8
Normalized On-Resistance
14 VGS=10V
VGS=4.5V ID=30A
12
RDS(ON) (mΩ)
1.6
10 17
8 1.4 5
VGS=10V 2
6
1.2 10
4 VGS=4.5V
2 1 ID=20A
0
0 5 10 15 20 25 30 0.8
ID (A) 0 25 50 75 100 125 150 175 200
0
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C) 18
Figure 4: On-Resistance vs. Junction Temperature
30 1.0E+02
ID=30A
1.0E+01
25
40
1.0E+00
20
125°C
RDS(ON) (mΩ)
1.0E-01
IS (A)
15 125°C
1.0E-02
25°C
10 1.0E-03
25°C
1.0E-04
5
1.0E-05
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10 VSD (Volts)
VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
10 1800
1600
VDS=12.5V
8 ID=30A 1400
Ciss
Capacitance (pF)
1200
VGS (Volts)
6
1000
800
4
600 Coss
2 400
200
Crss
0 0
0 5 10 15 20 25 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
1000.0 200
17
ID (Amps)
10.0 120
1ms
DC 5
10ms
1.0 80 2
10
TJ(Max)=175°C
0.1 40
TC=25°C
0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)
10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient
RθJC=3°C/W
Thermal Resistance
40
1
0.1 PD
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
70 60
ID(A), Peak Avalanche Current
60
50
TA=125°C 10
10 TA=150°C
0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)
60 10000
50 TA=25°C
1000
Current rating ID(A)
40
17
Power (W)
30 100 5
2
20 10
10
10
0 1
0 25 50 75 100 125 150 175 0 0 0 0.01 0.1 1 10 100 1000
0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
RθJA=50°C/W
Thermal Resistance
1 40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
30 12 16 3
di/dt=800A/us 14 di/dt=800A/us
25 125ºC 10 125ºC 2.5
12
20 8 2
10
trr
Qrr (nC)
25ºC
trr (ns)
Irm (A)
25ºC
15 6 8 1.5
S
Qrr 125ºC 6 125ºC
10 4 1
Irm 4
S
5 25ºC 2 0.5
2 25ºC
0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
Figure 17: Diode Reverse Recovery Charge and Figure 18: Diode Reverse Recovery Time and
Peak Current vs. Conduction Current Softness Factor vs. Conduction Current
25 10 15 2.5
Is=20A
Is=20A 125ºC
20 8 12 125ºC 2
trr
25ºC 9 1.5
15 6 25ºC
Qrr (nC)
trr (ns)
Irm (A)
S
Qrr
10 125ºC 4 6 125º 1
S
5 25ºC 2 3 0.5
25ºC
Irm
0 0 0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
di/dt (A/µs) di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and Figure 20: Diode Reverse Recovery Time and
Peak Current vs. di/dt Softness Factor vs. di/dt
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
t on t off
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds