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by TIP47/D
SEMICONDUCTOR TECHNICAL DATA

 

      
!    
. . . designed for line operated audio output amplifier, Switchmode power supply
 
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
drivers and other switching applications. *Motorola Preferred Device

• 250 V to 400 V (Min) — VCEO(sus)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• 1 A Rated Collector Current 1.0 AMPERE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Popular TO–220 Plastic Package POWER TRANSISTORS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
NPN SILICON
MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
250 – 300 – 350 – 400 VOLTS
Rating Symbol TIP47 TIP48 TIP49 TIP50 Unit 40 WATTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEO 250 300 350 400 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage VCB 350 400 450 500 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous IC 1.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Peak 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 0.6 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation PD
@ TC = 25_C 40 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C 0.32 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation PD
@ TA = 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2.0 Watts
Derate above 25_C CASE 221A–06
0.016 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TO–220AB
Unclamped Inducting Load E 20 mJ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Energy (See Figure 8)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 150 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 3.125 _C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient

TA TC
RθJA 62.5 _C/W

4 40
PD, POWER DISSIPATION (WATTS)

3 30
TC

2 20

TA
1 10

0 0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1

 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ

 
 
 
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) TIP47 VCEO(sus) 250 — Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 30 mAdc, IB = 0) TIP48 300 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIP49 350 —
TIP50 400 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 150 Vdc, IB = 0) TIP47 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 200 Vdc, IB = 0) TIP48 — 1.0
(VCE = 250 Vdc, IB = 0) TIP49 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 300 Vdc, IB = 0) TIP50 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICES mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 350 Vdc, VBE = 0) TIP47 — 1.0
(VCE = 400 Vdc, VBE = 0) TIP48 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 450 Vdc, VBE = 0) TIP49 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 500 Vdc, VBE = 0) TIP50 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current IEBO — 1.0 mAdc
(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
DC Current Gain hFE —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 0.3 Adc, VCE = 10 Vdc) 30 150

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1.0 Adc, VCE = 10 Vdc) 10 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) — 1.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1.0 Adc, IB = 0.2 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage VBE(on) — 1.5 Vdc
(IC = 1.0 Adc, VCE = 10 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product fT 10 — MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain hfe 25 — —
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
v v
(1) Pulse Test: Pulse width 300 µs, Duty Cycle 2.0%.

TURN–ON PULSE
APPROX VCC 1.0
+11 V RC TJ = 25°C
0.5 VCC = 200 V
Vin 0 Vin SCOPE IC/IB = 5.0
VEB(off) RB tr
t1 0.2
t, TIME ( µs)

t3 Cjd << Ceb

APPROX 0.1
+11 V td
t1 ≤ 7.0 ns – 4.0 V
0.05
Vin 100 < t2 < 500 µs
t3 < 15 ns
DUTY CYCLE ≈ 2.0% 0.02
t2
APPROX – 9.0 V
TURN–OFF PULSE 0.01
0.02 0.05 0.1 0.2 0.5 1.0 2.0
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. IC, COLLECTOR CURRENT (AMPS)

Figure 2. Switching Time Equivalent Circuit Figure 3. Turn–On Time

2 Motorola Bipolar Power Transistor Device Data


 
 
 
 

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 P(pk)
ZθJC(t) = r(t) RθJC
0.07 0.05
RθJC = 3.125°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) – TC = P(pk) ZθJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

5.0
TC ≤ 25°C There are two limitations on the power handling ability of a
IC, COLLECTOR CURRENT (AMPS)

2.0
100 µs
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
1.0
1.0 ms
the transistor that must be observed for reliable operation,
0.5 i.e., the transistor must not be subjected to greater dissipa-
dc 500 µs
tion than the curves indicate.
0.2 The data of Figure 5 is based on T J(pk) = 150_C; TC is
SECONDARY BREAKDOWN LIMITED
0.1 THERMALLY LIMITED @ 25°C
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
0.05
BONDING WIRE LIMITED
TIP47
v 150 _ C. T J(pk) may be calculated from the data in
CURVES APPLY TIP48 Figure 4. At high case temperatures, thermal limitations will
0.02 TIP49 reduce the power that can be handled to values less than the
BELOW RATED VCEO
TIP50
limitations imposed by second breakdown.
5.0 10 20 50 100 200 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

5.0 + 4.5
ts
θV, TEMPERATURE COEFFICIENTS (mV/°C)

*APPLIES FOR IC/IB ≤ hFE/5

2.0 + 3.5

1.0 + 2.5
t, TIME ( µs)

TJ = 25°C + 1.5
0.5 VCC = 200 V
IC/IB = 5.0 + 25°C to + 150°C
+ 0.5 θVC FOR VCE(sat)
tf 0
0.2 – 55°C to + 25°C
– 0.5
+ 25°C to + 150°C
0.1
– 1.5 θVB FOR VBE
0.05 – 55°C to + 25°C
0.02 0.05 0.1 0.2 0.5 1.0 2.0 – 2.5
0.02 0.05 0.1 0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn–Off Time Figure 7. Temperature Coefficients

Motorola Bipolar Power Transistor Device Data 3


 
 
 
 
tw ≈ 3 ms
VCE MONITOR (SEE NOTE A)
0V
INPUT
VOLTAGE
RBB1 = –5 V
TUT 100 mH
MJE171 150 Ω 100 ms
50 VCC = 20 V 0.63 A
INPUT COLLECTOR
IC MONITOR CURRENT
50 RBB2 = 0V
100 Ω VCER
VBB2 = RS =
VBB1 = 10 V 0 0.1 Ω COLLECTOR
VOLTAGE
10 V
VCE(sat)
Note A: Input pulse width is increased until ICM = 0.63 A.

Figure 8. Inductive Load Switching

200 1.4
VCE = 10 V
100 1.2
TJ = 150°C
hFE, DC CURRENT GAIN

60 1.0

V, VOLTAGE (VOLTS)
40 25°C VBE(sat) @ IC/IB = 5.0 V
0.8
20
– 55°C VBE(on) @ VCE = 4 V
0.6
10
0.4
6.0
4.0 0.2 VCE(sat) @ IC/IB = 5.0 V

2.0 0
0.02 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 0.02 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 9. DC Current Gain Figure 10. “On” Voltages

4 Motorola Bipolar Power Transistor Device Data


 
 
 
 
PACKAGE DIMENSIONS

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

CASE 221A–06
TO–220AB
ISSUE Y

Motorola Bipolar Power Transistor Device Data 5


 
 
 
 

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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6 Motorola Bipolar Power Transistor Device Data

*TIP47/D*
◊ TIP47/D