EE211 2023 Spring

Homework - Problem Set #3

Due: April 12th, 11:59 pm

Please scan your homework and upload it on the KLMS website.

Problem 1 (10 points)

Answer the following questions as concisely as possible.
(a) Explain the effective density of state in a conduction band. (3pts)
* 로
4π( 2mn )
( E)
g
=

.
h3
EFrisvalidwhen
.

-
)
ronly F

when decreases of
'

electlon t also decreases

,
Fnergy , * States

(b) Explain the physical reason why product of electron and hole concentrations of n-
type Si semiconductor (for example, Nd = 1016 cm-3) is same to that of intrinsic
semiconductor. (3pts)

ntypeandintrinsicsemiconductorane no =
p
.
in tHermal
eqniibrinmm

. =n 는 = n를
And M= 는 .= 는:
Alaays . p.= n
n
n
n

(c) Explain the physical reason why the hole concentration of the n-type Si is much less
than that of intrinsic Si Semiconductor. (4pts)
0

Semiconductor 은 dono " 도넣어서제작함

N
Mpuriry
+ atom 아
ype
.

첨가한 donof hole

에

atoms 가 electon valencedbaud

을 추가하여 그 결과 concenttation 이

감소한다 .
… infrinsic Si Semicondncto로 보다 작.

Problem 2 (10 points)

Answer the following questions.
(a) A semiconductor is doped with an impurity concentration N such that N >> ni and all
the impurities are ionized. Also, n = N and p = ni2/N. Is the impurity a donor or an
acceptor? Explain. (2pts)

…n
NM: p -☆
Impurity"
,= p :
, ni ' "
sa
dinor
 (b) The electron concentration in a piece of Si maintained at 300 K under equilibrium
condition, is 105cm-3. What is the hole concentration? (2pts)
:

P. =
ni P .
. .%)
5
' 05 "

1051 는 . 25 시
Com ]
-

=
h. 2

(c) For a silicon sample maintained at T = 300 K, the Fermi level is located 0.259 eV
below the intrinsic Fermi level. What are the hole and electron concentrations? (3pts)

Elfif
=
-
=
KTlu (
x 월 ) =
K 사 ( 300 ) 설 이 않 ×시.
.
) = 0 295 ,

BA Solving
-

' 0
. = 3 . 30시
0
대 :n = ;- n l (=" 5시 )
=
6 . ×
7
시o
; "
[cm ]
.
o 3 , 36 × 1014

(d) In a non-degenerate germanium sample maintained under equilibrium conditions

near room temperature, it is known that ni = 1013cm"
-3, n = 2p, and N = 0. Determine n
A
and ND. (3pts)

i) n=
fni =
P
2 :
P = 7. 6 n Non [am - "
]
n 계 414 × 시o
'
Com )
'

:
Nd -vca
ii n
jin
)

.o Na v. -

ni= .
=
t 2
@ . r nolva
-

고
n -
섬
:

:
( NA = 0 ) Nd= 7 07 시 .

,
Problem 3. Textbook Problem 4.7 (10 points)
f() 는
eE KT
- E. Assume the Boltzmann approximation in a semiconductor is valid. Determine the
23
4π c2m )
* ratio of n(E) = gC(E)fF(E) at E = Ec + 4kT to that at E = Ec + kT/2. 3

( renk
* Z n엠
gc
.

r π L2ma )
4π[2ma *
=
EE 4
H 3 타
1) E Ect 4Kt nCE )
=
r
KT
iij n ctI - nCE ]= r
KT
, 코
4KT
=
2
느 :
:

E. )
… , ,

Ie h3
, -
,
,

ek

Problem 4. Textbook Problem 4.17 (10 points)

Silicon at T = 300 K is doped with arsenic atoms such that the concentration of electrons
is n0 = 7×1015 cm-3. LE LFF ) -
-

(a) Find Ec - EF. (2pts) no Nc e n 7×1

j, =
=300 INc 2 00
KT
.
=
T
,
=
. 시
1서

.-
① nolul
o
'
) (

-KT )
= 타탸 =
0. 2145 [ev 3
(b) Determine EF - Ev. (2pts)

EF Ev- =
EF E t Ei-
ceU )
-
로
-
012145
. =

+ 112 = 0 , 9505
 [ 탸 Ev )

(c) Calculate p0. (2pts)

P .
=
tUv × ekT = 7 30 × 103
,

(d) Which carrier is the minority carrier? (2pts)

Holer

(e) Find EF - EFi. (2pts)

n=1 . 5100
Mo =
Mi 오 *
타이야며
T
…EF -
= 사음
(
) 013300
, 는
EF 1 KT =
e 대

Problem 5. Textbook Problem 4.19 (10 points)

The electron concentration in silicon at T = 300 K is n0 = 2×105 cm-3.
(a) Determine the position of the Fermi level with respect to the valence band energy
level. (3pts) Nc
E F (
-
Tlnln )
=
0 0044EeV -
]
. : -
=

F 는 +태 턍
. F

고
.
=
- -

.
(b) Determine p0. (3pts) 미, 고 2 0 0044 = 0 26
-
,
,

KT
"
탸
=

. =
U. × e
- 2 .
42 × 1014

(c) Is this n- or p-type material? (4pts)

meterialzt
" ' f
type
s -

Problem 6. Textbook Problem 4.24 (10 points)

Silicon at T =300 K is doped with boron atoms such that the concentration of holes
is p0 = 5×1015 cm-3.
(a) Find EF - Ev. (2pts)
FEv =
KTlul
.) =
ollq [eV J

(b) Determine Ec - EF. (2pts)

iEF= EE- Ev tEvEF = 1
. 12 -

011a 0 = 0. azzcev ]
(c) Determine n0. (2pts) -
( 탄 tF)
kT
no =
lUc ×
e
=
9 . 66 ×H
3
[ 1035
(d) Which carrier is the majority carrier? (2pts)
t is holes

(e) Determine EFi - EF. (2pts)

(
EFi-EF = KTln월 ) =
0, 3294 cev)
 Problem 7. Textbook Problem 4.38 (13 points)
Assume that silicon, germanium, and gallium arsenide each have dopant concentrations
of Nd = 1×1013 cm-3 and Na = 2.5×1013 cm-31at T = 300 K. For each of the three
1

materials:

(a) Is this material n type or p type? (6pts) 잴

GaA P vNo - 1
.
Nd = 1 .5 Mon :
=
.
.
= 아
2 l0 cam
"
]

[ since
ba >> lud No 1Wa >>Ki
]
-

-t is
o
type
-

(b) Calculate n0 and p0. (7pts)

SiOD Na
No

fNo 08
J
. - "
km [
-

pini x .(5 1
%3(am ] 1 .5 시 .
= + l
- . : =

N @ 1 k '
M

-
Problem 8. Textbook Problem 4.45 (13 points) GD 0 .
= … ~ 3 . 261013 … n. =
. 모로
A 1 , 76 시

A particular semiconductor material is doped at Nd = 2×1014 cm-3 and Na = 1.2×1014

cm-3. The thermal equilibrium electron concentration is found to be n0 = 1.1×1014 cm-3.
Assuming complete ionization, determine the intrinsic carrier concentration and the
thermal equilibrium hole concentration.
:
zNo
Na -No o -n
-
n "[am" p "

lving
no = ( )4 ~1 . ,ME =5174 시 (cm ]
By n=
)
2
+
. S

.
p
3 시0

Problem 9. Textbook Problem 4.53 (14 points)

For a particular semiconductor, Eg = 1.50 eV, mp* = 10 mn*, T = 300 K, and ni = 1×105
cm-3.
(a) Determine the position of the intrinsic Fermi energy level with respect to the center
of the bandgap. (6pts)
EFi Eint
43KTlulm* = 010447 eV
-

=
쓺
)

(b) Impurity atoms are added so that the Fermi energy level is 0.45 eV below the center
of the bandgap.

(i) Are acceptor or donor atoms added? (4pts)

(ii) What is the concentration of impurity atoms added? (4pts)

):
Aceptoratomsadded.LEF로F = 0, 494nceV ) : P .
=
Ri e
나치냐
KT 1 .9 n× M 113